SEMICONDUCTOR TECHNICAL DATA
!
High–Performance Silicon–Gate CMOS
The MC74HC175A is identical in pinout to the LS175. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device consists of four D flip–flops with common Reset and Clock
inputs, and separate D inputs. Reset (active–low) is asynchronous and
occurs when a low level is applied to the Reset input. Information at a D input
is transferred to the corresponding Q output on the next positive going edge
of the Clock input.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity 166 FETs or 41.5 Equivalent Gates
LOGIC DIAGRAM
CLOCK
DATA
INPUTS
D0
D1
D2
D3
RESET
9
4
5
12
13
1
10
11
15
14
2
Q0
3
Q0
7
Q1
6
Q1
Q2
Q2
Q3
Q3
INVERTING
AND
NONINVERTING
OUTPUTS
16
1
16
1
16
1
ORDERING INFORMATION
MC74HCXXXAN
MC74HCXXXAD
MC74HCXXXADT
PIN ASSIGNMENT
Q0
Q0
D0
D1
Q1
Q1
GND
1
2
3
4
6
7
8
RESET
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
D SUFFIX
SOIC PACKAGE
CASE 751B–05
DT SUFFIX
TSSOP PACKAGE
CASE 948F–01
Plastic
SOIC
TSSOP
16
V
CC
15
Q3
14
Q3
13
D3
125
D2
11
Q2
10
Q2
9
CLOCK
PIN 16 = V
PIN 8 = GND
This document contains information on a product under development. Motorola reserves the right to
change or discontinue this product without notice.
2/98
Motorola, Inc. 1998
CC
1
FUNCTION TABLE
Inputs Outputs
Reset Clock D Q Q
LXXLH
HHHL
HLLH
H L X No Change
REV 0.1
MC74HC175A
MAXIMUM RATINGS*
Symbol
V
V
I
I
Î
Î
T
Î
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
DC Output Current, per Pin
out
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic DIP†
D
ОООООООООООО
ОООООООООООО
Storage Temperature
stg
ОООООООООООО
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
(Plastic DIP, SOIC or TSSOP Package)
Value
– 0.5 to + 7.0
– 1.5 to VCC + 1.5
– 0.5 to VCC + 0.5
± 20
± 25
± 50
750
500
ÎÎÎÎ
450
ÎÎÎÎ
– 65 to + 150
ÎÎÎÎ
ÎÎÎÎ
260
Unit
V
V
V
mA
mA
mA
mW
Î
Î
_
C
Î
_
C
Î
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
) v VCC.
out
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
ÎÎ
ÎÎ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) VCC = 3.0 V
ОООООООООООО
ОООООООООООО
Parameter
VCC = 4.5 V
VCC = 6.0 V
Min
2.0
0
– 55
0
0
Î
0
Î
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎ
Symbol
V
IH
ÎÎ
ÎÎ
V
IL
ÎÎ
ÎÎ
V
OH
ÎÎ
ÎÎ
ÎÎ
ООООООО
Parameter
Minimum High–Level Input
Voltage
ООООООО
ООООООО
Maximum Low–Level Input
Voltage
ООООООО
ООООООО
Minimum High–Level Output
Voltage
ООООООО
ООООООО
ООООООО
ООООООО
Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
ООООООО
out
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
out
ООООООО
ООООООО
Vin = VIH or V
|I
| v 20 µA
out
ООООООО
Vin = VIH or VIL|I
ООООООО
ООООООО
IL
| v 2.4 mA
out
|I
| v 4.0 mA
out
|I
| v 5.2 mA
out
Max
6.0
V
CC
+ 125
1000
600
Î
500
400
Î
Unit
V
V
_
C
ns
Î
Î
V
CC
ÎÎ
V
2.0
3.0
ÎÎ
4.5
ÎÎ
6.0
2.0
3.0
ÎÎ
4.5
ÎÎ
6.0
2.0
4.5
ÎÎ
6.0
3.0
ÎÎ
4.5
6.0
ÎÎ
Guaranteed Limit
– 55 to
ÎÎ
25_C
ÎÎ
1.5
2.1
ÎÎ
ÎÎ
3.15
4.2
ÎÎ
ÎÎ
0.5
0.9
ÎÎ
ÎÎ
1.35
1.80
ÎÎ
ÎÎ
1.9
4.4
ÎÎ
5.9
ÎÎ
2.48
ÎÎ
ÎÎ
3.98
5.48
ÎÎ
ÎÎ
v
85_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
ÎÎ
v
125_C
1.5
2.1
ÎÎ
3.15
ÎÎ
4 2
0.5
0.9
ÎÎ
1.35
ÎÎ
1.80
1.9
4.4
ÎÎ
5.9
2.20
ÎÎ
3.70
5.20
ÎÎ
Î
Unit
Î
Î
Î
Î
Î
Î
Î
V
V
V
MOTOROLA ECLinPS and ECLinPS Lite
2
DL140 — Rev 3
MC74HC175A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
V
Symbol
Symbol
V
OL
ÎÎ
ÎÎ
ÎÎ
I
in
ÎÎ
I
CC
ÎÎ
Parameter
Parameter
Maximum Low–Level Output
Voltage
ООООООО
ООООООО
ООООООО
Maximum Input Leakage Current
ООООООО
Maximum Quiescent Supply
ООООООО
Current (per Package)
Test Conditions
Test Conditions
Vin = VIH or V
|I
| v 20 µA
out
ООООООО
Vin = VIH or VIL|I
ООООООО
ООООООО
Vin = VCC or GND
ООООООО
Vin = VCC or GND
ООООООО
I
= 0 µA
out
IL
| v 2.4 mA
out
|I
| v 4.0 mA
out
|I
| v 5.2 mA
out
2.0
4.5
ÎÎ
6.0
3.0
4.5
ÎÎ
6.0
ÎÎ
6.0
ÎÎ
6.0
ÎÎ
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
CC
CC
V
V
– 55 to
25_C
v
0.1
0.1
ÎÎ
0.1
ÎÎ
0.26
0.26
ÎÎ
ÎÎ
± 0.1
ÎÎ
ÎÎ4ÎÎ
0.26
ÎÎ
ÎÎ
± 1.0
ÎÎ
85_C
0.1
0.1
0.1
0.33
0.33
0.33
40
v
125_C
0.1
0.1
ÎÎ
0.1
0.40
0.40
ÎÎ
0.40
ÎÎ
± 1.0
ÎÎ
160
ÎÎ
Î
Î
Î
Î
Î
Unit
Unit
V
µA
µA
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6 ns)
L
Guaranteed Limit
Symbol
f
max
ÎÎ
ÎÎ
t
,
PLH
ÎÎ
t
PHL
ÎÎ
t
PHL
ÎÎ
ÎÎ
t
,
TLH
t
ÎÎ
THL
ÎÎ
C
in
Parameter
Maximum Clock Frequency (50% Duty Cycle)
ООООООООООООООО
(Figures 1 and 4)
ООООООООООООООО
Maximum Propagation Delay, Clock to Q or Q
ООООООООООООООО
(Figures 1 and 4)
ООООООООООООООО
Maximum Propagation Delay, Reset to Q or Q
(Figures 2 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Input Capacitance
V
CC
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
3.0
ÎÎ
4.5
ÎÎ
6.0
2.0
3.0
ÎÎ
4.5
ÎÎ
6.0
—
– 55 to
V
25_C
6
ÎÎ
10
30
ÎÎ
35
150
ÎÎ
75
30
ÎÎ
26
125
70
ÎÎ
25
ÎÎ
21
75
27
ÎÎ
15
ÎÎ
13
10
v
85_Cv 125_C
4.8
ÎÎ
8.0
24
ÎÎ
28
190
ÎÎ
90
38
ÎÎ
33
155
85
ÎÎ
31
ÎÎ
26
95
32
ÎÎ
19
ÎÎ
16
10
ÎÎ
ÎÎ
225
ÎÎ
110
ÎÎ
190
110
ÎÎ
ÎÎ
110
ÎÎ
ÎÎ
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
20
24
45
38
38
32
36
22
19
10
Unit
4
6
MHz
Î
Î
ns
Î
Î
ns
Î
Î
ns
Î
Î
pF
C
PD
Power Dissipation Capacitance (Per Flip–Flop)*
*Used to determine the no–load dynamic power consumption: PD = CPD V
Motorola High–Speed CMOS Data Book (DL129/D).
ECLinPS and ECLinPS Lite
DL140 — Rev 3
Typical @ 25°C, VCC = 5.0 V
35
2
f + ICC VCC. For load considerations, see Chapter 2 of the
CC
pF
3 MOTOROLA