Datasheet MC34074P, MC34074VD, MC34074VDR2, MC34074VP, MC34074AD Datasheet (MOTOROLA)

...
Semiconductor Components Industries, LLC, 1999
October, 1999 – Rev. 2
1 Publication Order Number:
MC34071/D
MC34071,2,4,A MC33071,2,4,A
High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers
The MC33071/72/74, MC34071/72/74 series of devices are available in standard or prime performance (A Suffix) grades and are specified over the commercial, industrial/vehicular or military temperature ranges. The complete series of single, dual and quad operational amplifiers are available in plastic DIP, SOIC and TSSOP surface mount packages.
Wide Bandwidth: 4.5 MHz
High Slew Rate: 13 V/µs
Fast Settling Time: 1.1 µs to 0.1%
Wide Single Supply Operation: 3.0 V to 44 V
Wide Input Common Mode Voltage Range: Includes Ground (V
EE)
Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)
Large Output Voltage Swing: –14.7 V to +14 V (with ±15 V
Supplies)
Large Capacitance Drive Capability: 0 pF to 10,000 pF
Low Total Harmonic Distortion: 0.02%
Excellent Phase Margin: 60°
Excellent Gain Margin: 12 dB
Output Short Circuit Protection
ESD Diodes/Clamps Provide Input Protection for Dual and Quad
P SUFFIX
CASE 626
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See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
(Single, Top View)
(Dual, T op View)
Offset Null
V
EE
NC V
CC
Output Offset Null
Inputs
V
EE
Inputs 1
Inputs 2
Output 2
Output 1 V
CC
1 2 3 4
8 7 6 5
+
+
1
2 3 4
8 7 6 5
+
1
8
1
8
SO–8 D SUFFIX CASE 751
Inputs 1
Output 1
V
CC
Inputs 2
Output 2
Output 4
Inputs 4
V
EE
Inputs 3
Output 3
(Quad, T op View)
4
2
3
1
PIN CONNECTIONS
1
2 3 4
5 6
78
9
10
11
12
13
14
– +
– +
+ –
+ –
14
1
14
1
14
1
P SUFFIX
CASE 646
SO–14
D SUFFIX
CASE 751A
TSSOP–14
DTB SUFFIX
CASE 948G
MC34071,2,4,A MC33071,2,4,A
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Offset Null
(MC33071, MC34071 only)
Q1
Q2
Q3 Q4
Q5
Q6
Q7
Q17
Q18
D2
C2
D3
R6 R7
R8
R5
Q15 Q16
Q14
Q13
Q11
Q10
R2
C1
R1
Q9
Q8
Q12
D1
R3 R4
Inputs
V
CC
Output
Current
Limit
VEE/Gnd
Base
Current
Cancellation
+
Q19
Bias
Representative Schematic Diagram
(Each Amplifier)
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (from VEE to VCC) V
S
+44 V
Input Differential Voltage Range V
IDR
Note 1 V
Input Voltage Range V
IR
Note 1 V
Output Short Circuit Duration (Note 2) t
SC
Indefinite sec
Operating Junction Temperature T
J
+150 °C
Storage Temperature Range T
stg
–60 to +150 °C
NOTES: 1.Either or both input voltages should not exceed the magnitude of VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 1).
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ELECTRICAL CHARACTERISTICS (V
CC
= +15 V , VEE = –15 V , RL = connected to ground, unless otherwise noted. See Note 3 for
TA = T
low
to T
high
)
A Suffix Non–Suffix
Characteristics Symbol Min Typ Max Min Typ Max Unit
Input Offset Voltage (RS = 100 , VCM = 0 V, VO = 0 V)
VCC = +15 V, VEE = –15 V, TA = +25°C VCC = +5.0 V , VEE = 0 V, TA = +25°C VCC = +15 V, VEE = –15 V, TA = T
low
to T
high
V
IO
— —
0.5
0.5 —
3.0
3.0
5.0
— —
1.0
1.5 —
5.0
5.0
7.0
mV
Average Temperature Coefficient of Input Offset Voltage
RS = 10 , VCM = 0 V, VO = 0 V,
TA = T
low
to T
high
VIO/T 10 10 µV/°C
Input Bias Current (VCM = 0 V, VO = 0 V)
TA = +25°C TA = T
low
to T
high
I
IB
— —
100
500 700
— —
100—500
700
nA
Input Offset Current (VCM = 0 V, VO = 0V)
TA = +25°C TA = T
low
to T
high
I
IO
— —
6.0 —
50
300
— —
6.0 —
75
300
nA
Input Common Mode Voltage Range
TA = +25°C TA = T
low
to T
high
V
ICR
VEE to (VCC –1.8) VEE to (VCC –2.2)
VEE to (VCC –1.8) VEE to (VCC –2.2)
V
Large Signal Voltage Gain (VO = ±10 V, RL = 2.0 kΩ)
TA = +25°C TA = T
low
to T
high
A
VOL
50 25
100
— —
25 20
100
— —
V/mV
Output Voltage Swing (VID = ±1.0 V)
VCC = +5.0 V , VEE = 0 V, RL = 2.0 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
low
to T
high
V
OH
3.7
13.6
13.4
4.0 14 —
— — —
3.7
13.6
13.4
4.0 14 —
— — —
V
VCC = +5.0 V , VEE = 0 V, RL = 2.0 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
low
to T
high
V
OL
— — —
0.1
–14.7
0.3 –14.3 –13.5
— — —
0.1
–14.7
0.3 –14.3 –13.5
V
Output Short Circuit Current (VID = 1.0 V, VO = 0 V,
TA = 25°C)
Source Sink
I
SC
10 20
30 30
— —
10 20
30 30
— —
mA
Common Mode Rejection
RS 10 k, VCM = V
ICR
, TA = 25°C
CMR 80 97 70 97 dB
Power Supply Rejection (RS = 100 Ω)
VCC/VEE = +16.5 V/–16.5 V to +13.5 V/–13.5 V ,
TA = 25°C
PSR 80 97 70 97 dB
Power Supply Current (Per Amplifier, No Load)
VCC = +5.0 V , VEE = 0 V, VO = +2.5 V , TA = +25°C VCC = +15 V, VEE = –15 V, VO = 0 V, TA = +25°C VCC = +15 V, VEE = –15 V, VO = 0 V,
TA = T
low
to T
high
I
D
— — —
1.6
1.9 —
2.0
2.5
2.8
— — —
1.6
1.9 —
2.0
2.5
2.8
mA
NOTES: 3.T
low
= –40°C for MC33071, 2, 4, /A T
high
= +85°C for MC33071, 2, 4, /A
=0°C for MC34071, 2, 4, /A = +70°C for MC34071, 2, 4, /A
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AC ELECTRICAL CHARACTERISTICS (V
CC
= +15 V, VEE = –15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)
A Suffix Non–Suffix
Characteristics Symbol Min Typ Max Min Typ Max Unit
Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, CL = 500 pF)
AV = +1.0 AV = –1.0
SR
8.0 —
10 13
— —
8.0 —
10 13
— —
V/µs
Setting Time (10 V Step, AV = –1.0)
To 0.1% (+1/2 LSB of 9–Bits) To 0.01% (+1/2 LSB of 12–Bits)
t
s
— —
1.1
2.2
— —
— —
1.1
2.2
— —
µs
Gain Bandwidth Product (f = 100 kHz) GBW 3.5 4.5 3.5 4.5 MHz Power Bandwidth
AV = +1.0, RL = 2.0 kΩ, VO = 20 Vpp, THD = 5.0%
BW 160 160 kHz
Phase margin
RL = 2.0 k RL = 2.0 kΩ, CL = 300 pF
f
m
— —
60 40
— —
— —
60 40
— —
Deg
Gain Margin
RL = 2.0 k RL = 2.0 kΩ, CL = 300 pF
A
m
— —
12
4.0
— —
— —
12
4.0
— —
dB
Equivalent Input Noise Voltage
RS = 100 , f = 1.0 kHz
e
n
32 32
nV/ Hz√
Equivalent Input Noise Current
f = 1.0 kHz
i
n
0.22 0.22
pA/ Hz√
Differential Input Resistance
VCM = 0 V
R
in
150 150 M
Differential Input Capacitance
VCM = 0 V
C
in
2.5 2.5 pF
Total Harmonic Distortion
AV = +10, RL = 2.0 kΩ, 2.0 Vpp VO 20 Vpp, f = 10 kHz
THD 0.02 0.02 %
Channel Separation (f = 10 kHz) 120 120 dB Open Loop Output Impedance (f = 1.0 MHz) |ZO| 30 30 W
Figure 1. Power Supply Configurations Figure 2. Offset Null Circuit
Single Supply Split Supplies
1
2
3
4
V
CC
V
EE
V
CC
V
CC
V
EE
V
EE
1
2
3
4
3.0 V to 44 V VCC+|VEE|44 V
Offset nulling range is approximately ±80 mV with a 10 k potentiometer (MC33071, MC34071 only).
V
CC
V
EE
1
2
3
4
5
6
7
10 k
+
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RL Connected to Ground TA = 25°C
RL = 10 k
RL = 2.0 k
V
O
, OUTPUT VOLTAGE SWING (V
pp
)
Figure 3. Maximum Power Dissipation versus
Temperature for Package Types
Figure 4. Input Offset Voltage versus
Temperature for Representative Units
Figure 5. Input Common Mode Voltage
Range versus Temperature
Figure 6. Normalized Input Bias Current
versus Temperature
Figure 7. Normalized Input Bias Current versus
Input Common Mode Voltage
Figure 8. Split Supply Output Voltage
Swing versus Supply Voltage
TA, AMBIENT TEMPERATURE (°C)
D
P , MAXIMUM POWER DISSIPATION (mW)
–55 –40 –20 0 20 40 60 80 100 120 140 160
8 & 14 Pin Plastic Pkg
SO–14 Pkg
SO–8 Pkg
TA, AMBIENT TEMPERATURE (°C)
IO
V , INPUT OFFSET VOLTAGE (mV)
–55 –25 0 25 50 75 100 12
5
VCC = +15 V VEE = –15 V VCM = 0
TA, AMBIENT TEMPERATURE (°C)
ICR
V , INPUT COMMON MODE VOLTAGE RANGE (V)
–55 –25 0 25 50 75 100 125
V
CC
VCC/VEE = +1.5 V/ –1.5 V to +22 V/ –22 V
V
EE
TA, AMBIENT TEMPERATURE (°C)
IB
I , INPUT BIAS CURRENT (NORMALIZED)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V VCM = 0
VIC, INPUT COMMON MODE VOLTAGE (V)
–12 –8.0 –4.0 0 4.0 8.0 12
VCC = +15 V VEE = –15 V TA = 25°C
VCC, |VEE|, SUPPLY VOLTAGE (V)
0 5.0 10 15 20 25
V
IB
I , INPUT BIAS CURRENT (NORMALIZED)
2400
2000
1600
1200
800
400
0
4.0
2.0
0
–2.0
–4.0
V
CC
VCC –0.8
VCC –1.6
VCC –2.4
VEE +0.01
V
EE
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
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V
CC
VCC = +15 V RL to V
CC
TA = 25°C
Gnd
V
CC
VCC = +15 V RL = Gnd TA = 25°C
Gnd
V
O
, OUTPUT VOLTAGE SWING (V
pp
)
Figure 9. Single Supply Output Saturation
versus Load Resistance to V
CC
60
Figure 10. Split Supply Output Saturation
versus Load Current
Figure 11. Single Supply Output Saturation
versus Load Resistance to Ground
Figure 12. Output Short Circuit Current
versus Temperature
Figure 13. Output Impedance
versus Frequency
Figure 14. Output Voltage Swing
versus Frequency
0 5.0 10 15 20
IL, LOAD CURRENT (±mA)
V
CC
V
EE
Sink
VCC/VEE = +5.0 V/ –5.0 V to +22 V/ –22 V TA = 25°C
Source
RL, LOAD RESISTANCE TO GROUND (Ω)
100 1.0 k 10 k 100 k
sat
V , OUTPUT SATURATION VOLTAGE (V)
RL, LOAD RESISTANCE TO VCC (Ω)
100 1.0 k 10 k 100 k
TA, AMBIENT TEMPERATURE (°C)
SC
I , OUTPUT CURRENT (mA)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V RL 0.1 Vin = 1.0 V
Sink
Source
f, FREQUENCY (Hz)
O
Z , OUTPUT IMPEDANCE ( )
1.0 k 10 k 100 1.0 M 10 M
AV = 1000
AV = 100 AV = 10 AV = 1.0
VCC = +15 V VEE = –15 V VCM = 0 VO = 0 IO = ±0.5 mA TA = 25°C
f, FREQUENCY (Hz)
3.0 k 10 k 30 k 100 k 300 k 1.0 M 3.0 M
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k THD 1.0% TA = 25°C
sat
V , OUTPUT SATURATION VOLTAGE (V)
sat
V , OUTPUT SATURATION VOLTAGE (V)
V
CC
VCC –1.0
VCC –2.0
VEE +2.0
VEE +1.0
V
EE
VCC–2.0
VCC–4.0
V
CC
0.2
0.1
0
0
–0.4
–0.8
2.0
1.0
50
40
30
20
10
0
50
40
30
20
10
0
28 24
20 16 12
8.0
4.0 0
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1. Phase RL = 2.0 k
2. Phase RL = 2.0 k, CL = 300 pF
3. Gain RL = 2.0 k
4. Gain RL = 2.0 k, CL = 300 pF VCC = +15 V VEE = 15 V VO = 0 V TA = 25°C
Phase Margin = 60°
Gain Margin = 12 dB
3
4
1
2
Gain
VCC = +15 V VEE = –15 V VO = 0 V RL = 2.0 k TA = 25°C
Phase
Phase Margin
= 60°
Figure 15. Total Harmonic Distortion
versus Frequency
Figure 16. Total Harmonic Distortion
versus Output Voltage Swing
Figure 17. Open Loop Voltage Gain
versus Temperature
Figure 18. Open Loop Voltage Gain and
Phase versus Frequency
Figure 19. Open Loop Voltage Gain and
Phase versus Frequency
Figure 20. Normalized Gain Bandwidth
Product versus Temperature
f, FREQUENCY (Hz)
10 100 1.0 k 10 k 100 k
AV = 1000
AV = 100
AV = 10
AV = 1.0
VCC = +15 V VEE = –15 V VO = 2.0 V
pp
RL = 2.0 k TA = 25°C
VO, OUTPUT VOLTAGE SWING (Vpp)
THD, TOTAL HARMONIC DISTORTION (%)
0 4.0 8.0 12 16 20
VCC = +15 V VEE = –15 V RL = 2.0 k TA = 25°C
AV = 1000
AV = 100 AV = 10 AV = 1.0
TA, AMBIENT TEMPERATURE (°C)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V VO= –10 V to +10 V RL = 10 k f 10Hz
f, FREQUENCY (Hz)
1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M 100 M
, EXCESS PHASE (DEGREES)
φ
, EXCESS PHASE (DEGREES)
φ
f, FREQUENCY (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 TA, AMBIENT TEMPERATURE (°C)
GBW, GAIN BANDWIDTH PRODUCT (NORMALIED)
–55 –25 0 25 50 75 100 12
5
VCC = +15 V VEE = –15 V RL = 2.0 k
VOL
A,
O
P
E
N
LOO
P V
OL
T
AGE
GAI
N
(
d
B)
0.4
0.3
0.2
0.1
0
4.0
3.0
2.0
1.0
0
116
112
108
104
100
96
100
80
60
40
20
0
20
10
0
–10
–20
–30
–40
1.15
1.1
1.05
1.0
0.95
0.9
0.85
0
45
90
135
180
100
120
140
160
180
THD
,
T
O
T
AL
H
AR
M
O
N
IC
D
IS
T
OR
T
IO
N
(
%
)
VOL
A,
O
P
E
N
LOO
P V
OL
T
AGE
GAI
N
(
d
B)
VOL
A , OPEN LOOP VOLTAGE GAIN (dB)
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VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to
R
VO = –10 V to +10 V TA = 25°C
Figure 21. Percent Overshoot versus
Load Capacitance
Figure 22. Phase Margin versus
Load Capacitance
Figure 23. Gain Margin versus Load Capacitance Figure 24. Phase Margin versus Temperature
Figure 25. Gain Margin versus Temperature
Figure 26. Phase Margin and Gain Margin
versus Differential Source Resistance
PERCENT OVERSHOOT
CL, LOAD CAPACITANCE (pF)
10 100 1.0 k 10 k
VCC = +15 V VEE = –15 V RL = 2.0 k VO = –10 V to +10 V TA = 25°C
CL, LOAD CAPACITANCE (pF)
, PHASE MARGIN (DEGREES)φ
m
10 100 1.0 k 10 k
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V TA = 25°C
CL, LOAD CAPACITANCE (pF)
m
A , GAIN MARGIN (dB)
10 100 1.0 k 10 k
, PHASE MARGIN (DEGREES)φ
m
TA, AMBIENT TEMPERATURE (°C)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to
VO = –10 V to +10 V
CL = 10 pF
CL = 100 pF
CL = 1,000 pF
CL = 10,000 pF
TA, AMBIENT TEMPERATURE (°C)
–55 –25 0 25 50 75 100
125
VCC = +15 V
VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V
CL = 10 pF
CL = 1,000 pF
m
A , GAIN MARGIN (dB)
CL = 100 pF
CL = 10,000 pF
Phase
m
A , GAIN MARGIN (dB)
RT, DIFFERENTIAL SOURCE RESISTANCE (Ω)
1.0 100 1.0 k 10 k10 100 k
R
1
R
2
V
O
+
VCC = +15 V VEE = –15 V RT = R1 + R
2
AV = +100 VO = 0 V TA = 25°C
Gain
, PHASE MARGIN (DEGREES)φ
m
100
80
60
40
20
0
70 60
50 40 30 20 10
0
14 12
10
8.0
6.0
2.0 0
4.0
80
60
40
20
0
16
12
8.0
4.0
0
12 10
8.0
6.0
4.0
2.0 0
60 50 40 30 20 10 0
70
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Figure 27. Normalized Slew Rate
versus Temperature
Figure 28. Output Settling Time
Figure 29. Small Signal Transient Response Figure 30. Large Signal Transient Reponse
Figure 31. Common Mode Rejection
versus Frequency
Figure 32. Power Supply Rejection
versus Frequency
TA, AMBIENT TEMPERATURE (°C)
SR,
SLE
W
RA
T
E
(
N
OR
M
ALI
Z
E
D
)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 500 pF
ts, SETTLING TIME (µs)
O
V , OUTPUT VOLTAGE SWING FROM 0 V (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCC = +15 V VEE = –15 V AV = –1.0 TA = 25°C
10 mV
1.0 mV
1.0 mV
Compensated Uncompensated
10 mV
1.0 mV
1.0 mV
50 mV/DIV
2.0 µs/DIV
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 300 pF TA = 25°C
5.0 V/DIV
1.0 µs/DIV
f, FREQUENCY (Hz)
C
M
R,
CO
MM
O
N M
O
D
E
RE
J
EC
T
IO
N
(
d
B)
0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M
TA = 25°C
TA = 125°C
TA = –55°C
VCC = +15 V VEE = –15 V VCM = 0 V VCM = ±1.5 V
f, FREQUENCY (Hz)
PSR, POWER SUPPLY REJECTION (dB)
0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M
VCC = +15 V VEE = –15 V TA = 25°C
(VCC = +1.5 V)
(VEE = +1.5 V)
+PSR
–PSR
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 300 pF TA = 25°C
1.15
1.1
1.05
1.0
0.95
0.9
0.85
10
5.0
0
–5.0
–10
0
0
100
80
60
40
20
0
100
80
60
40
20
0
V
CM
V
O
A
DM
CMR = 20 Log
V
CM
V
O
x A
DM
+
V
O
A
DM
+
V
CC
V
EE
VO/A
DM
V
CC
+PSR = 20 Log
VO/A
DM
V
EE
–PSR = 20 Log
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Figure 33. Supply Current versus
Supply Voltage
Figure 34. Power Supply Rejection
versus Temperature
Figure 35. Channel Separation versus Frequency Figure 36. Input Noise versus Frequency
VCC, |VEE|, SUPPLY VOLTAGE (V)
CC
I , SUPPLY CURRENT (mA)
0 5.0 10 15 20 25
TA = 25°C
TA = 125°C
TA = –55°C
TA, AMBIENT TEMPERATURE (°C)
PSR, POWER SUPPLY REJECTION (dB)
–55 –25 0 25 50 75 100 125
VCC = +15 V VEE = –15 V
(VCC = +1.5 V)
(VEE = +1.5 V)
+PSR
–PSR
f, FREQUENCY (kHz)
CHANNEL SEPARATION (dB)
10 20 30 50 70 100 200 300
VCC = +15 V VEE = –15 V TA = 25°C
f, FREQUENCY (kHz)
n
e , INPUT NOICE VOLTAGE (
i , INPUT NOISE CURRENT (pA )
10 100 1.0 k 10 k 100 k
nV
Hz )
Hz
n
Voltage
Current
9.0
8.0
7.0
6.0
5.0
4.0
105
95
85
75
65
120
100
80
60
40
20
0
70 60 50 40 30 20 10
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4 0
V
O
A
DM
+
V
CC
V
EE
VO/A
DM
V
CC
+PSR = 20 Log
VO/A
DM
V
EE
–PSR = 20 Log
VCC = +15 V VEE = –15 V VCM = 0 TA = 25°C
APPLICATIONS INFORMATION
CIRCUIT DESCRIPTION/PERFORMANCE FEA TURES
Although the bandwidth, slew rate, and settling time of the MC34071 amplifier series are similar to op amp products utilizing JFET input devices, these amplifiers offer other additional distinct advantages as a result of the PNP transistor differential input stage and an all NPN transistor output stage.
Since the input common mode voltage range of this input stage includes the VEE potential, single supply operation is feasible to as low as 3.0 V with the common mode input voltage at ground potential.
The input stage also allows differential input voltages up to ±44 V, provided the maximum input voltage range is not exceeded. Specifically, the input voltages must range between VEE and VCC supply voltages as shown by the maximum rating table. In practice, although not recommended, the input voltages can exceed the V
CC
voltage by approximately 3.0 V and decrease below the V
EE
voltage by 0.3 V without causing product damage, although output phase reversal may occur. It is also possible to source
up to approximately 5.0 mA of current from VEE through either inputs clamping diode without damage or latching, although phase reversal may again occur.
If one or both inputs exceed the upper common mode voltage limit, the amplifier output is readily predictable and may be in a low or high state depending on the existing input bias conditions.
Since the input capacitance associated with the small geometry input device is substantially lower (2.5 pF) than the typical JFET input gate capacitance (5.0 pF), better frequency response for a given input source resistance can be achieved using the MC34071 series of amplifiers. This performance feature becomes evident, for example, in fast settling D–to–A current to voltage conversion applications where the feedback resistance can form an input pole with the input capacitance of the op amp. This input pole creates a 2nd order system with the single pole op amp and is therefore detrimental to its settling time. In this context, lower input capacitance is desirable especially for higher
MC34071,2,4,A MC33071,2,4,A
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11
values of feedback resistances (lower current DACs). This input pole can be compensated for by creating a feedback zero with a capacitance across the feedback resistance, if necessary, to reduce overshoot. For 2.0 k of feedback resistance, the MC34071 series can settle to within 1/2 LSB of 8 bits in 1.0 µs, and within 1/2 LSB of 12–bits in 2.2 µs for a 10 V step. In a inverting unity gain fast settling configuration, the symmetrical slew rate is ±13 V/µs. In the classic noninverting unity gain configuration, the output positive slew rate is +10 V/µs, and the corresponding negative slew rate will exceed the positive slew rate as a function of the fall time of the input waveform.
Since the bipolar input device matching characteristics are superior to that of JFETs, a low untrimmed maximum offset voltage of 3.0 mV prime and 5.0 mV downgrade can be economically offered with high frequency performance characteristics. This combination is ideal for low cost precision, high speed quad op amp applications.
The all NPN output stage, shown in its basic form on the equivalent circuit schematic, offers unique advantages over the more conventional NPN/PNP transistor Class AB output stage. A 10 k load resistance can swing within 1.0 V of the positive rail (VCC), and within 0.3 V of the negative rail (VEE), providing a 28.7 Vpp swing from ±15 V supplies. This large output swing becomes most noticeable at lower supply voltages.
The positive swing is limited by the saturation voltage of the current source transistor Q7, and VBE of the NPN pull up transistor Q17, and the voltage drop associated with the short circuit resistance, R7. The negative swing is limited by the saturation voltage of the pull–down transistor Q16, the voltage drop ILR6, and the voltage drop associated with resistance R7, where IL is the sink load current. For small valued sink currents, the above voltage drops are negligible, allowing the negative swing voltage to approach within millivolts of VEE. For large valued sink currents (>5.0 mA), diode D3 clamps the voltage across R6, thus limiting the negative swing to the saturation voltage of Q16, plus the forward diode drop of D3 (≈VEE +1.0 V). Thus for a given supply voltage, unprecedented peak–to–peak output voltage swing is possible as indicated by the output swing specifications.
If the load resistance is referenced to VCC instead of ground for single supply applications, the maximum possible output swing can be achieved for a given supply voltage. For light load currents, the load resistance will pull the output to VCC during the positive swing and the output will pull the load resistance near ground during the negative swing. The load resistance value should be much less than that of the feedback resistance to maximize pull up capability.
Because the PNP output emitter–follower transistor has been eliminated, the MC34071 series offers a 20 mA
minimum current sink capability, typically to an output voltage of (VEE +1.8 V). In single supply applications the output can directly source or sink base current from a common emitter NPN transistor for fast high current switching applications.
In addition, the all NPN transistor output stage is inherently fast, contributing to the bipolar amplifier’s high gain bandwidth product and fast settling capability. The associated high frequency low output impedance (30 typ @ 1.0 MHz) allows capacitive drive capability from 0 pF to 10,000 pF without oscillation in the unity closed loop gain configuration. The 60° phase margin and 12 dB gain margin as well as the general gain and phase characteristics are virtually independent of the source/sink output swing conditions. This allows easier system phase compensation, since output swing will not be a phase consideration. The high frequency characteristics of the MC34071 series also allow excellent high frequency active filter capability, especially for low voltage single supply applications.
Although the single supply specifications is defined at
5.0 V, these amplifiers are functional to 3.0 V @ 25°C although slight changes in parametrics such as bandwidth, slew rate, and DC gain may occur.
If power to this integrated circuit is applied in reverse polarity or if the IC is installed backwards in a socket, large unlimited current surges will occur through the device that may result in device destruction.
Special static precautions are not necessary for these bipolar amplifiers since there are no MOS transistors on the die.
As with most high frequency amplifiers, proper lead dress, component placement, and PC board layout should be exercised for optimum frequency performance. For example, long unshielded input or output leads may result in unwanted input–output coupling. In order to preserve the relatively low input capacitance associated with these amplifiers, resistors connected to the inputs should be immediately adjacent to the input pin to minimize additional stray input capacitance. This not only minimizes the input pole for optimum frequency response, but also minimizes extraneous “pick up” at this node. Supply decoupling with adequate capacitance immediately adjacent to the supply pin is also important, particularly over temperature, since many types of decoupling capacitors exhibit great impedance changes over temperature.
The output of any one amplifier is current limited and thus protected from a direct short to ground. However, under such conditions, it is important not to allow the device to exceed the maximum junction temperature rating. T ypically for ±15 V supplies, any one output can be shorted continuously to ground without exceeding the maximum temperature rating.
MC34071,2,4,A MC33071,2,4,A
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Figure 37. AC Coupled Noninverting Amplifer Figure 38. AC Coupled Inverting Amplifier
(Typical Single Supply Applications VCC = 5.0 V)
Figure 39. DC Coupled Inverting Amplifer
Maximum Output Swing
Figure 40. Unity Gain Buffer TTL Driver
Figure 41. Active High–Q Notch Filter
Figure 42. Active Bandpass Filter
+
V
CC
5.1 M
20 k
C
in
V
in
1.0 M
MC34071
V
O
0
3.7 V
pp
R
L
10 k
AV = 101
100 k
1.0 k BW (–3.0 dB) = 45 kHz
C
O
V
O
36.6 mV
pp
+
3.7 V
pp
0
V
CC
V
O
100 k
C
in
10 k
100 k
C
O
R
L
10 k
68 k
Vin 370 mV
pp
AV = 10 BW (–3.0 dB) = 450 kHz
+
4.75 V
pp
V
O
V
O
V
CC
R
L
100 k
91 k
5.1 k
1.0 M
AV = 10
V
in
2.63 V
5.1 k
BW (–3.0 dB) = 450 kHz
+
V
in
2.5 V
0 0 to 10,000 pF
Cable
TTL Gate
– +
V
in
V
O
16 k
C
0.01
32 k
2.0 R
2.0 C
0.02
fo = 1.0 kHz
fo =
Vin 0.2 Vdc
1
4πRC
2.0 C
0.02
16 k
RR
– +
V
in
V
O
V
CC
R3
2.2 k
C
0.047
R2
5.6 k
0.4 V
CC
R1
fo = 30 kHz Ho = 10 Ho = 1.0
1.1 k
Given fo = Center Frequency AO = Gain at Center Frequency Choose Value fo, Q, Ao, C
R3 = R1 = R2 =
Q R3 R1 R3
2H
o
4Q2R1–R3
πfoC
For less than 10% error from operational amplifier
Qof
o
GBW
< 0.1
where fo and GBW are expressed in Hz.
C
0.047
MC34071
MC34071
MC34071
MC34071
MC34071
MC54/74XX
Then:
GBW = 4.5 MHz Typ.
MC34071,2,4,A MC33071,2,4,A
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Figure 43. Low Voltage Fast D/A Converter Figure 44. High Speed Low Voltage Comparator
Figure 45. LED Driver Figure 46. Transistor Driver
Figure 47. AC/DC Ground Current Monitor Figure 48. Photovoltaic Cell Amplifier
5.0 k
10 k
Bit
Switches
C
F
R
F
V
O
V
CC
(R–2R) Ladder Network Settling Time
1.0 µs (8–Bits, 1/2 LSB)
– +
5.0 k5.0 k
10 k 10 k
+
V
O
V
O
V
in
1.0 V
2.0 k R
L
2.0 V
4.0 V
0.1
t
25 V/µs
0.2 µs Delay
Delay
1.0 µs
V
in
t
13 V/µs
+
V
CC
V
ref
“ON” Vin < V
ref
“ON” Vin > V
ref
V
in
+
V
CC
V
CC
R
L
R
L
(A) PNP (B) NPN
+
+
V
O
I
Load
R1
R2
R
S
Ground Current Sense Resistor
VO = I
Load RS
BW ( –3.0 dB) = GBW
For VO > 0.1V
R1 R2
R1+R2
R2
– +
V
O
MC34071
I
Cell
V
Cell
= 0 V
VO = I
Cell RF
VO > 0.1 V
R
F
1+
MC34071
MC34071
MC34071 MC34071
MC34071
MC34071
MC34071,2,4,A MC33071,2,4,A
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14
Figure 49. Low Input Voltage Comparator
with Hysteresis
Figure 50. High Compliance Voltage to
Sink Current Converter
Figure 51. High Input Impedance
Differential Amplifier
Figure 52. Bridge Current Amplifier
Figure 53. Low Voltage Peak Detector
Figure 54. High Frequency Pulse
Width Modulation
V
ref
R2
V
O
V
OH
V
OL
V
inLVinH
V
ref
Hysteresis
V
in
V
in
R1
MC34071
V
inL
=(V
OL–Vref
)+V
ref
R1
R1+R2
V
inH
=(VOH–V
ref
)+V
ref
VH =(VOH –VOL)
+ –
R1
R1+R
R1
R1+R2
V
in
I
out
R
+
I
out
=
Vin±V
IO
R
1/2
MC34072
+
+
R1 R2
R3
R4
V
O
+V1 +V2
R2 R4
R3R1
(Critical to CMRR)
VO = 1 V2–V1
For (V2 V1), V > 0
=
+
R4 R3
R4 R3
– +
+V
ref
R
F
V
O
RR
R
R = ∆R
R < < R RF > > R
(VO 0.1 V)
R
F
VO = V
ref
R R
F
2R
2
+
V
in
V
in
R
L
VP10,000 pF
VO = Vin (pk)
+
V
P
t
+
+
V
P
t
t
I
out
V
P
+
0
+
I
SC
Base Charge
Removal
±I
B
V+
47 k
100 k
C
R
Pulse Width
Control Group
OSC
Comparator
High Current
Output
f
OSC
^
V
0.85 RC
100 k
I
B
MC34071
MC34071
MC34071
1/2
MC34072
1/2
MC34072
1/2
MC34072
MC34071,2,4,A MC33071,2,4,A
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15
Figure 55. Second Order Low–Pass Active Filter Figure 56. Second Order High–Pass Active Filter
GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = ±15.0 V
Figure 57. Fast Settling Inverter Figure 58. Basic Inverting Amplifier
Figure 59. Basic Noninverting Amplifier Figure 60. Unity Gain Buffer (AV = +1.0)
+
R1
R3
560 510
C2
C1
0.44
0.02
R2
5.6 k
MC34071
fo = 1.0 kHz
Ho = 10 Choose: fo, Ho, C2 Then: C1 = 2C2 (Ho+1)
R2 =
R3 = R1 =
R2
H
o
Ho+14πfoC2
R2
+
C2
0.05
C1
1.0
R1
46.1 k
R2
1.1 k
fo = 100 Hz Ho = 20
Choose: fo, Ho, C1
Then: R1 =
R2 =
C2 =
Ho+0.5
πfoC1
2πfoC1 (1/Ho+2)
C
H
o
C1
1.0
+
CF*
VO = 10 V
Step
R
F
2.0 k
I
High Speed
DAC
*Optional Compensation
Uncompensated
Compensated
ts = 1.0 µs to 1/2 LSB (8–Bits) ts = 2.2 µs to 1/2 LSB (12–Bits)
SR = 13 V/µs
V
O
+
R1
R2
V
O
V
in
R
L
BW (–3.0 dB) = GBW
=
SR = 13 V/µs
V
O
V
in
R2 R1
R1 +R2
R1
BW (–3.0 dB) = GBW
R1 +R2
R1
+
V
in
V
O
R2
R
L
R1
=
V
O
V
in
R2 R1
1 +
+
V
in
V
O
BWp = 200 kHz VO = 20 V
pp
SR = 10 V/µs
MC34071
MC34071
MC34071
MC34071
MC34071
2
Ǹ
2
Ǹ
2
Ǹ
MC34071,2,4,A MC33071,2,4,A
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Figure 61. High Impedance Differential Amplifier
Figure 62. Dual Voltage Doubler
R
R
E
Example: Let: R = RE = 12 k Then: AV = 3.0 BW = 1.5 MHz
AV = 1 + 2
R
R
E
+
+
+
V
O
R
R
R
R
R
MC34074
+
+
100 k
10
+10
–10
220 pF
–V
O
+V
O
RL+V
O
–V
O
18.93 –18.78
10 k 18 –18
5.0 k 15.4 –15.4
R
L
100 k
100 k
R
L
+
+
+
+
+
10
10
10
MC34074
MC34074
MC34074
MC34074
MC34074
MC34071,2,4,A MC33071,2,4,A
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17
ORDERING INFORMATION
Op Amp
Function
Device
Operating
Temperature Range
Package Shipping
Single MC34071P, MC34071AP
MC34071D, MC34071AD MC34071DR2, MC34071ADR2
TA = 0° to +70°C
DIP–8
SO–8
SO–8 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
MC33071P, MC33071AP MC33071D, MC33071AD MC33071DR2, MC33071ADR2
TA = –40° to +85°C
DIP–8
SO–8
SO–8 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
Dual MC34072P, MC34072AP
MC34072D, MC34072AD MC34072DR2, MC34072ADR2
TA = 0° to +70°C
DIP–8
SO–8
SO–8 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
MC33072P, MC33072AP MC33072D, MC33072AD MC33072DR2, MC33072ADR2
TA = –40° to +85°C
DIP–8
SO–8
SO–8 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
MC34072VD MC34072VDR2
TA = –40° to +125°C
SO–8
SO–8 / Tape & Reel
98 Units / Rail
2500 Units / Tape & Reel
Quad MC34074P , MC34074AP
MC34074D, MC34074AD MC34074DR2, MC34074ADR2
TA = 0° to +70°C
DIP–8
SO–8
SO–8 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
MC33074P, MC33074AP MC33074D, MC33074AD MC33074DR2, MC33074ADR2 MC33074DTB, MC33074ADTB MC33074DTBR2, MC33074ADTBR2
TA = –40° to +85°C
DIP–8
SO–8
SO–8 / Tape & Reel
TSSOP–14
TSSOP–14 / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
96 Units / Rail
2500 Units / Tape & Reel
MC34074VD MC34074VDR2
TA = –40° to +125°C
SO–8
SO–8 / Tape & Reel
98 Units / Rail
2500 Units / Tape & Reel
MC34071,2,4,A MC33071,2,4,A
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18
P ACKAGE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
D SUFFIX
(SO–8)
PLASTIC PACKAGE
CASE 751–05
ISSUE R
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
14
58
F
NOTE 2
–A–
–B–
–T–
SEATING PLANE
H
J
G
D
K
N
C
L
M
M
A
M
0.13 (0.005) B
M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC M ––– 10 ––– 10 N 0.76 1.01 0.030 0.040
__
SEATING PLANE
1
4
58
A0.25MCB
SS
0.25MB
M
h
q
C
X 45
_
L
DIM MIN MAX
MILLIMETERS
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E
1.27 BSCe
3.80 4.00
H 5.80 6.20
h
0 7
L 0.40 1.25
q
0.25 0.50
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.
D
E
H
A
B
e
B
A1
C
A
0.10
MC34071,2,4,A MC33071,2,4,A
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19
P ACKAGE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 646–06
ISSUE L
D SUFFIX
(SO–14)
PLASTIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
4. ROUNDED CORNERS OPTIONAL.
17
14 8
B
A
F
HG D
K
C
N
L
J
M
SEATING PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.715 0.770 18.16 19.56 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L 0.300 BSC 7.62 BSC M 0 10 0 10 N 0.015 0.039 0.39 1.01
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
G
P
7 PL
14 8
71
M
0.25 (0.010) B
M
S
B
M
0.25 (0.010) A
S
T
–T–
F
R
X 45
SEATING PLANE
D 14 PL
K
C
J
M
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
____
MC34071,2,4,A MC33071,2,4,A
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20
P ACKAGE DIMENSIONS
DTB SUFFIX (TSSOP–14)
PLASTIC PACKAGE
CASE 948G–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V
S
T
L
–U–
SEATING PLANE
0.10 (0.004)
–T–
SECTION N–N
DETAIL E
J
J1
K
K1
DETAIL E
F
M
–W–
0.25 (0.010)
8
14
7
1
PIN 1 IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
–V–
14X REFK
N
N
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MC34071/D
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