Motorola MC33169DTB-4.0, MC33169DTB-2.5 Datasheet

Device

Operating

Temperature Range

Package



SEMICONDUCTOR

TECHNICAL DATA

GaAs POWER AMPLIFIER

SUPPORT IC

ORDERING INFORMATION

MC33169DTB–4.0
MC33169DTB–2.5

TA = –40° to +85°C TSSOP–14

DTB SUFFIX

PLASTIC PACKAGE

CASE 948G

(TSSOP–14)

14

1

PIN CONNECTIONS

Order this document by MC33169/D

V

CC

Idle Mode Input

C2 Input

C1/C2

C1 Input

VO Output

VO Charge Pump

Capacitor+

Gnd

VO Charge Pump

Capacitor–

VBB Double

VBB Triple

Sense Input
Tx Power

Control Input
Gate Drive Output

(T op View)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1

MOTOROLA ANALOG IC DEVICE DATA

 

  
 

The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs
used in hand portable telephones such as GSM, PCN and DECT. This
device provides negative voltages for full depletion of Enhanced MESFETs
as well as a priority management system of drain switching, ensuring that the
negative voltage is always present before turning “on” the Power Amplifier.
Additional features include an idle mode input and a direct drive of the
N–Channel drain switch transistor.

This product is available in two versions, – 2.5 and – 4.0 V. The –4.0 V
version is intended for supplying RF modules for GSM and DCS1800
applications, whereas the – 2.5 V version is dedicated for DECT and PHS
systems.

• Negative Regulated Output for Full Depletion of GaAs MESFETs

• Drain Switch Priority Management Circuit

• CMOS Compatible Inputs

• Idle Mode Input (Standby Mode) for Very Low Current Consumption

• Output Signal Directly Drives N–Channel FET

• Low Startup and Operating Current

Simplified Block Diagram

VBB Double

C3

V

CC

+–C1–+

C2

V

BB

Triple

C4

+
–

Tx Power

Control

Input

Idle

Mode Input

Gnd

C

p

+–

V

O

Output

(–2.5 V or –4.0 V)

C

i

R

f

C

f

+–

+

RF
In

RF
Out

+

V

Battery

(2.7 to 7.0 V)

Gate Drive Output

Sense Input

V

BB

Generator

(Voltage Tripler)

Priority

Management

Negative

Generator

Charge

Pump

Power Amplifier

Sense

MC33169

MMSF4N01HD

21 14

8

10

457

6

13

9

3

11

+

12

This device contains 148 active transistors.

This document contains information on a new product. Specifications and information herein
are subject to change without notice.

 Motorola, Inc. 1996 Rev 1

MC33169

2

MOTOROLA ANALOG IC DEVICE DATA

MAXIMUM RATINGS

Rating Pin Symbol Value Unit

Power Supply Voltage 14 V

CC

9.5 V

Tx Power Control Input 9 VT

x

V

CC

V

Idle Mode Input 13 V

i

V

CC

V

Sense Input 10 V

Sense

–5.0 to 0 V

Negative Generator Output Source Current 4 I

SS

20 mA

Charge Pump Capacitor Current – I

max

60 mA

Diode Forward Current – I

Fmax

60 mA

Gate Drive Output Current 8 I

GO

5.0 mA

Power Dissipation and Thermal Characteristics –

Maximum Power Dissipation @ TA = 50°C P

D

417 mW

Thermal Resistance, Junction–to–Air R

θJA

240 °C/W

Operating Junction Temperature T

J

+150 °C

Operating Ambient Temperature – T

A

–40 to +85 °C

Storage Temperature Range – T

stg

–60 to +150 °C

NOTE: ESD data available upon request.

MC33169–4.0

ELECTRICAL CHARACTERISTICS (V

CC

= 4.8 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic Pin Symbol Min Typ Max Unit

VBB GENERATOR (VOLTAGE TRIPLER)

Oscillator Frequency – f

osc

90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V , IO = 3.0 mA) V

Double Voltage 12 V

BBD

4.6 5.0 –

Triple V oltage 11 V

BBT

6.1 7.0 –

Triple V oltage (VCC = 7.2 V , IO = 3.0 mA) 11 V

BBT

– 11.2 –

NEGATIVE GENERATOR OUTPUT

Output Voltage (IO = 3.0 mA) 4 V

O

–3.75 –4.0 –4.25 V

Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 V

r

mVpp

(IO = 0 to 5.0 mA) – 2.0 –

PRIORITY MANAGEMENT SECTION

Idle Mode Input 13

Input Voltage High State (Logic 1) V

IH

2.0 – 2.7 V

Input Voltage Low State (Logic 0) V

IL

0 – 0.5 V

Input Current High State (Logic 1) I

IH

10 – 80 µA

Input Current Low State (Logic 0), i.e. Standby Mode I

IL

– – 1.0 µA

Tx Power Control Input 9

Input Voltage Range VT

x

0 – 3.1 V

Input Voltage “Of f” State (Zero RF Output Level) VT

x(off)

– 0.7 – V

Input Voltage “On” State (Maximum RF Output Level) VT

x(on)

– 2.7 – V

Input Resistance R

in

– 90 – kΩ

Bandwidth (–3.0 dB) B – 1.0 – MHz

Gate Drive Output 8

Voltage (VTx = 0 V) V

GO

– – 0.5 V

Voltage (VTx = 3.0 V) VCC+2.7 – –

Peak Current (Source and Sink) (VTx = 3.0 V) I

GO

– 3.0 – mA

Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 V

sense

–3.0 –3.2 – V

MC33169

3

MOTOROLA ANALOG IC DEVICE DATA

MC33169–4.0

ELECTRICAL CHARACTERISTICS (continued) (V

CC

= 4.8 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic UnitMaxTypMinSymbolPin

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V , IO = 3.0 mA) – I

CC

– 10 15 mA

ICC Operating – I

CC

mA
(VTx = 0 V, IO = 3.0 mA) – 12 15
(VTx = 0 V, IO = 0 mA) – 4.0 5.0

Standby Mode (Idle Mode Input = 0 V) – I

CC

– – 1.0 µA

MC33169–4.0

ELECTRICAL CHARACTERISTICS (V

CC

= 2.7 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic

Pin Symbol Min Typ Max Unit

VBB GENERATOR (VOLTAGE TRIPLER)

Oscillator Frequency – f

osc

90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V , IO = 3.0 mA) V

Double Voltage 12 V

BBD

4.6 5.0 –

Triple V oltage 11 V

BBT

6.1 7.0 –

Triple V oltage (VCC = 7.2 V , IO = 3.0 mA) 11 V

BBT

– 11.2 –

NEGATIVE GENERATOR OUTPUT

Output Voltage (IO = 1.0 mA) 4 V

O

–3.75 –4.0 –4.25 V

Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 V

r

mVpp

(IO = 0 to 5.0 mA) – 2.0 –

PRIORITY MANAGEMENT SECTION

Idle Mode Input 13

Input Voltage High State (Logic 1) V

IH

2.0 – 2.7 V

Input Voltage Low State (Logic 0) V

IL

0 – 0.5 V

Input Current High State (Logic 1) I

IH

10 – 80 µA

Input Current Low State (Logic 0), i.e. Standby Mode I

IL

– – 1.0 µA

Tx Power Control Input 9

Input Voltage Range VT

x

0 – 3.0 V

Input Voltage “Of f” State (Zero RF Output Level) VT

x(off)

– 0.7 – V

Input Voltage “On” State (Maximum RF Output Level) VT

x(on)

– 2.7 – V

Input Resistance R

in

– 90 – kΩ

Bandwidth (–3.0 dB) B – 1.0 – MHz

Gate Drive Output 8

Voltage (VTx = 0 V) V

GO

– – 0.5 V

Voltage (VTx = 3.0 V) VCC+2.7 – –

Peak Current (Source and Sink) (VTx = 3.0 V) I

GO

– 3.0 – mA

Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 V

sense

–3.0 –3.2 – V

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V) 14 I

CC

mA
(IO = 3.0 mA) – – 15
(IO = 1.0 mA) – – 9.0

ICC Operating (VTx = 0 V) 14 I

CC

mA
(IO = 3.0 mA) – – 13
(IO = 1.0 mA) – – 9.0
(IO = 0 mA) – 4.5 6.0

Standby Mode (Idle Mode Input = 0 V) 14 I

CC

– – 1.0 µA

MC33169

4

MOTOROLA ANALOG IC DEVICE DATA

MC33169–2.5

ELECTRICAL CHARACTERISTICS (V

CC

= 4.8 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic

Pin Symbol Min Typ Max Unit

VBB GENERATOR (VOLTAGE TRIPLER)

Oscillator Frequency – f

osc

90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V , IO = 3.0 mA) V

Double Voltage 12 V

BBD

4.6 5.0 –

Triple V oltage 11 V

BBT

6.1 7.0 –

Triple V oltage (VCC = 7.2 V , IO = 3.0 mA) 11 V

BBT

– 11.2 –

NEGATIVE GENERATOR OUTPUT

Output Voltage 4 V

O

V
(IO = 3.0 mA) –2.35 –2.5 –2.65
(IO = 5.0 mA, VCC = 6.0 V) – –2.5 –

Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 V

r

mVpp

(IO = 0 to 5.0 mA) – 2.0 8.0

PRIORITY MANAGEMENT SECTION

Idle Mode Input 13

Input Voltage High State (Logic 1) V

IH

2.0 – 2.7 V

Input Voltage Low State (Logic 0) V

IL

0 – 0.5 V

Input Current High State (Logic 1) I

IH

10 – 80 µA

Input Current Low State (Logic 0), i.e. Standby Mode I

IL

– – 1.0 µA

Tx Power Control Input 9

Input Voltage Range VT

x

0 – 3.0 V

Input Voltage “Of f” State (Zero RF Output Level) VT

x(off)

– 0.7 – V

Input Voltage “On” State (Maximum RF Output Level) VT

x(on)

– 2.7 – V

Input Resistance R

in

– 90 – kΩ

Bandwidth (–3.0 dB) B – 1.0 – MHz

Gate Drive Output 8

Voltage (VTx = 0 V) V

GO

– – 0.5 V

Voltage (VTx = 3.0 V) VCC+2.7 – –

Peak Current (VTx = 3.0 V) I

GO

– 3.0 – mA

Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 V

sense

–2.0 –2.3 – V

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V , IO = 3.0 mA) 14 I

CC

– 14 17 mA

ICC Operating 14 I

CC

mA
(VTx = 0 V, IO = 3.0 mA) – 13.5 16
(VTx = 0 V, IO = 0 mA) – 4.5 6.0

Standby Mode (Idle Mode Input = 0 V) 14 I

CC

– – 1.0 µA

PRIORITY MANAGEMENT TRUTH TABLE

Control Inputs Outputs

Idle Mode Tx Power Control V

O

Gate Drive

0
1
0
1

0
0
1
1

Off

–2.5 or –4.0 V

Off

–2.5 or –4.0 V

0.5 V max

0.5 V max

0.5 V max

VCC + 2.7 V min