Motorola MC33154D, MC33154P Datasheet
Device
Tested Operating
Temperature Range
Package
SEMICONDUCTOR
TECHNICAL DATA
SINGLE IGBT HIGH CURRENT
GATE DRIVER
ORDERING INFORMATION
MC33154D
MC33154P
TA = –40° to +85°C
Plastic SO–8
Plastic DIP–8
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
18
7
6
5
2
3
4
(Top View)
Current Sense
Input
Kelvin Gnd
V
EE
Input
Fault Blanking/
Desaturation Input
Gate Drive
Output
PIN CONNECTIONS
Order this document by MC33154/D
P SUFFIX
PLASTIC PACKAGE
CASE 626
Fault Output
V
CC
8
1
TA = –40° to +85°C
1
MOTOROLA ANALOG IC DEVICE DATA
The MC33154 is specifically designed as an IGBT driver for high powered
applications including ac induction motor control, brushless dc motor control,
and uninterruptable power supplies. This device also offers a cost effective
solution for driving power MOSFETS and Bipolar transistors.
Device protections include the choice of desaturation or overcurrent
sensing and an undervoltage lockout to provide assurance of proper gate
drive voltage.
These devices are available in dual–in–line and surface mount packages
and include the following features:
• High Current Output Stage: 4.0 A Source –2.0 A Sink
• Protection Circuits for Both Conventional and Sense IGBT’s
• Current Source for Blanking Timing
• Protection Against Over–Current and Short Circuit
• Under–Voltage Lockout Optimized for IGBT’ s
• Negative Gate Drive Capability
Simplified Block Diagram
Short Circuit
Latch
Over–Current
Latch
Fault
Output
S
Q
R
Current
Sense
Input
Kelvin
Gnd
Fault
Blanking/
Desaturation
Input
Gate
Drive
Output
Short Circuit
Comparator
Over–Current
Comparator
Desat./Blank.
Comparator
Under
Voltage
Lockout
Input
V
EE
V
CC
V
CC
V
CC
V
EE
V
EE
V
CC
V
EE
V
CC
V
EE
V
CC
V
EE
V
CC
S
Q
R
V
CC
7
4 5
8
2
1
130 mV
65 mV
1.0 mA
6.5 V
Output
Stage
12 V/
11 V
V
CC
6
V
EE
3
V
EE
Motorola, Inc. 1997 Rev 1This document contains information on a new product. Specifications and information herein
are subject to change without notice.
MC33154
2
MOTOROLA ANALOG IC DEVICE DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
VCC to VEE; VEE ≤ KGND ≤ V
CC
VCC – V
EE
20
Kelvin Ground to VEE (Note 1) KGnd – V
EE
20
Input V
in
VEE –0.3 to V
CC
V
Current Sense Input V
CS
–0.3 to V
CC
V
Fault Blanking/Desaturation Input V
BD
–0.3 to V
CC
V
Gate Drive Output I
O
A
Source Current 4.0
Sink Current 2.0
Diode Clamp Current 1.0
Fault Output I
FO
mA
Source Current 25
Sink Current 10
Power Dissipation and Thermal Characteristics
D Suffix SO–8 Package, Case 751
Maximum Power Dissipation @ TA = 50°C P
D
0.56 W
Thermal Resistance, Junction–to–Air R
θJA
180 °C/W
P Suffix DIP–8 Package, Case 626
Maximum Power Dissipation @ TA = 50°C P
D
1.0 W
Thermal Resistance, Junction–to–Air R
θJA
100 °C/W
Operating Junction Temperature T
J
150 °C
Operating Ambient Temperature T
A
–40 to +85 °C
Storage Temperature Range T
stg
–65 to +150 °C
NOTES: 1. Kelvin Ground must always be between VEE and VCC.
2.ESD data available upon request.
ELECTRICAL CHARACTERISTICS (V
CC
= 20 V, VEE = 0 V , Kelvin Gnd connected to VEE. For typical values
TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
INPUT
Input Threshold Voltage V
High State (Logic 1) @ TA = 25°C V
IH
9.0 10.5
High State (Logic 1) @ TA = –40 to +85°C 11.6
Low State (Logic 0) V
IL
4.5 7.0 –
Input Current — High State (VIH = 10.5 V) I
IH
– 100 500 µA
Input Current — Low State (VIL = 4.5 V) I
IL
– 50 100
GATE DRIVE OUTPUT
Output Voltage V
Low State (I
Sink
= 1.0 A) V
OL
– 2.0 2.5
High State (I
Source
= 2.0 A) V
OH
17 18 –
Output Pull–Down Resistor R
PD
– 100 200 kΩ
FAULT OUTPUT
Output Voltage V
Low State (I
Sink
= 5.0 mA) V
FL
– 0.2 1.0
High State (I
Source
= 20 mA) V
FH
17 18.3 –
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output CL = 15 nF) ns
Logic Input to Drive Output Rise t
PLH (in/out)
– 200 300
Logic Input to Drive Output Fall t
PHL (in/out)
– 120 300
Drive Output Rise Time (10% to 90%) CL = 15 nF t
r
– 80 200 ns
Drive Output Fall Time (90% to 10%) CL = 15 nF t
f
– 80 200 ns
Propagation Delay µs
Current Sense Input to Drive Output t
P(OC)
– 0.4 1.0
NOTE: 1.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T
low
= –40°C for MC33154 T
high
= +85°C for MC33154
MC33154
3
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS (continued) (V
CC
= 20 V, VEE = 0 V , Kelvin Gnd connected to VEE. For typical values
TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
SWITCHING CHARACTERISTICS
Fault Blanking/Desaturation Input to Drive Output t
P(FLT)
– 0.4 1.0
UVLO
Start–up Voltage VCC
start
11.3 12 12.6 V
Disable Voltage VCC
dis
10.4 11 11.7 V
COMPARATORS
Over Current Trip V oltage (V
Pin8
> 7.0 V) V
SOC
50 65 80 mV
Short Current Trip V oltage (V
Pin8
> 7.0 V) V
SSC
100 130 160 mV
Desaturation Threshold (V
Pin1
> 100 mV) V
th(FLT)
6.0 6.5 7.0 V
Sense Input Current (VSI = 0 V) I
SI
– –1.4 –10
m
A
FAULT BLANKING/DESATURATION INPUT
Current Source (V
Pin8
= 0 V, V
Pin4
≥ 10.5 V) I
chg
0.8 1.0 1.2 mA
Discharge Current (V
Pin8
= 15 V, V
Pin4
= 0 V) I
dschg
0.8 2.5 – mA
TOTAL DEVICE
Power Supply Current I
CC
mA
Standby (V
Pin 4
= 0 V, Output Open) – 9.0 14
Operating (CL = 15 nF, fin = 20 kHz) – 15 25
NOTE: 1.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T
low
= –40°C for MC33154 T
high
= +85°C for MC33154
4.0
20
0
200
V
O
, OUTPUT VOL TAGE (V)
Vin, INPUT VOLTAGE (V)
I
in
, INPUT CURRENT ( A)
Figure 1. Input Current versus Logic Input Voltage
Vin, INPUT VOLTAGE (V)
Figure 2. Output Voltage versus Input Voltage
TA = 25°C
VCC = 20 V
TA = 25°C
VCC = 20 V
40
20
0
2.0 4.0 6.0 8.0 10 12 14 20
14
12
10
8.0
6.0
4.0
2.0
0
5.0 6.0 7.0 11
12
16 18
80
60
120
100
160
140
180
m
8.0 9.0 10
16
18
MC33154
4
MOTOROLA ANALOG IC DEVICE DATA
V
OH
, DRIVE OUTPUT HIGH STATE VOLTAGE (V)
V
OH
, DRIVE OUTPUT HIGH STATE VOLTAGE (V)
0
20
0
2.0
–60
12
–60
19.2
–60
2.5
14
10
IO, OUTPUT CURRENT (A)
TA = 25°C
VCC = 20 V
I
sink
, OUTPUT SINK CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (
°
C)
V
OL
, OUTPUT LOW STATE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Input Threshold Voltage
versus Supply Voltage
VCC, SUPPLY VOLTAGE (V)
Figure 4. Input Thresholds versus Temperature
Figure 5. Drive Output Low State Voltage
versus Temperature
Figure 6. Drive Output Low State Voltage
versus Sink Current
Figure 7. Drive Output High State Voltage
versus Temperature
Figure 8. Output Saturation High
versus Output Current
TA = 25°C
, V
IL
, INPUT THRESHOLD VOLTAGE (V)V
IH
, V
IH
, INPUT THRESHOLD VOLTAGE (V)V
IL
V
OL
, OUTPUT LOW STATE VOLTAGE (V)
9.5
8.0
7.5
7.0
6.5
6.0
15 16 17 18 19 20
9.0
8.0
7.0
6.0
5.0
4.0
–40 –20 0 20 40 60 80 140
2.0
1.5
1.0
0.5
–40 –20 0 20 40 60 80 100 120 140
0
1.6
1.2
0.8
0
0.2 0.4 0.6 0.8 1.0
–40 –20 0 20 40 60 80 100 120 140
18.8
18.0
17.8
17.6
17.4
19
18
17
15
0.5 1.0 1.5 2.0 4.0
0.4
16
9.0
8.5
100 120
11
10
1.8
1.4
1.0
0.6
0.2
0.1 0.3 0.5 0.7 0.9
2.5 3.0 3.5
18.6
18.4
18.2
19.0
V
IH
V
IL
TA = 25°C
VCC = 20 V
I
Source
= 2.0 A
I
Source
= 1.0 A
I
Source
= 500 mA
I
Sink
= 250 mA
I
Sink
= 1.0 A
I
Sink
= 500 mA
V
IH
V
IL
VCC = 20 V
VCC = 20 V
VCC = 20 V
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