The MC33102 dual operational amplifier is an innovative design concept
employing Sleep–Mode technology. Sleep–Mode amplifiers have two
separate states, a sleepmode and an awakemode. In sleepmode, the
amplifier is active and waiting for an input signal. When a signal is applied
causing the amplifier to source or sink 160 µA (typically) to the load, it will
automatically switch to the awakemode which offers higher slew rate, gain
bandwidth, and drive capability.
• Two States: “Sleepmode” (Micropower) and “A wakemode”
(High Performance)
• Switches from Sleepmode to Awakemode in 4.0 µs when Output Current
Exceeds the Threshold Current (RL = 600 Ω)
• Independent Sleepmode Function for Each Op Amp
• Standard Pinouts – No Additional Pins or Components Required
• Sleepmode State – Can Be Used in the Low Current Idle State as a
Fully Functional Micropower Amplifier
• Automatic Return to Sleepmode when Output Current Drops Below
Threshold
• No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode
• Drop–in Replacement for Many Other Dual Op Amps
• ESD Clamps on Inputs Increase Reliability without Affecting Device
Operation
Sleep–Mode is a trademark of Motorola, Inc.
TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE
Characteristic
Low Current Drain45750µA
Low Input Offset Voltage0.150.15mV
High Output Current Capability0.1550mA
Low T.C. of Input Offset Voltage1.01.0µV/°C
High Gain Bandwidth (@ 20 kHz)0.334.6MHz
High Slew Rate0.161.7V/µs
Low Noise (@ 1.0 kHz)289.0
Sleepmode
(Typical)
MAXIMUM RATINGS
RatingsSymbolValueUnit
Supply Voltage (VCC to VEE)V
Input Differential Voltage Range
Input Voltage Range
Output Short Circuit Duration (Note 2)t
Maximum Junction Temperature
Storage Temperature
Maximum Power DissipationP
NOTES: 1. Either or both input voltages should not exceed VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ)
is not exceeded (refer to Figure 1).
V
IDR
V
SC
T
T
S
IR
J
stg
D
Awakemode
(Typical)Unit
+36V
(Note 1)V
(Note 2)sec
+150
–65 to +150
(Note 2)mW
nV/ Hz√
°C
DUAL SLEEP–MODE
OPERATIONAL AMPLIFIER
SEMICONDUCTOR
TECHNICAL DATA
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
P SUFFIX
PLASTIC PACKAGE
CASE 626
PIN CONNECTIONS
Inputs 1
V
EE
ORDERING INFORMATION
Device
MC33102D
MC33102P
Temperature Range
TA = – 40° to +85°C
1Output 1V
2
1
3
4
(Dual, Top View)
Operating
8
1
8
1
8
CC
Output 2
7
6
2
5
Plastic DIP
Inputs
2
Package
SO–8
MOTOROLA ANALOG IC DEVICE DATA
Motorola, Inc. 1996Rev 0
1
MC33102
Simplified Block Diagram
V
in
Fractional
Load Current
Detector
Op Amp
I
Bias
Sleepmode
Current
Regulator
Current
Threshold
Detector
% of I
L
BufferBuffer
I
I
L
V
out
R
L
I
sleep
ref
Awakemode
Current
Regulator
Awake to
Sleepmode
Delay Circuit
C
Storage
I
awake
Enable
I
Hysteresis
I
Enable
DC ELECTRICAL CHARACTERISTICS(V
Characteristics
Input Offset Voltage (RS = 50 Ω, VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C
TA = –40° to +85°C
Awakemode
TA = +25°C
TA = –40° to +85°C
Input Offset Voltage Temperature Coefficient
(RS = 50 Ω, VCM = 0 V, VO = 0 V)
TA = –40° to +85°C (Sleepmode and Awakemode)
Input Bias Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C
TA = –40° to +85°C
Awakemode
TA = +25°C
TA = –40° to +85°C
Input Offset Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C
TA = –40° to +85°C
Awakemode
TA = +25°C
TA = –40° to +85°C
CC
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
FigureSymbolMinTypMaxUnit
2VIO
3∆VIO/∆T
4, 6I
—IIO
IB
—
—
—
—
—1.0—
—
—
—
—
—
—
—
—
0.15
—
0.15
—
8.0
—
100
—
0.5
—
5.0
—
mV
2.0
3.0
2.0
3.0
µV/°C
nA
50
60
500
600
nA
5.0
6.0
50
60
2
MOTOROLA ANALOG IC DEVICE DATA
MC33102
DC ELECTRICAL CHARACTERISTICS(V
Characteristics
Common Mode Input Voltage Range
(∆VIO = 5.0 mV, VO = 0 V)
Sleepmode and Awakemode
Large Signal Voltage Gain
Sleepmode (RL = 1.0 MΩ)
TA = +25°C
TA = –40° to +85°C
Awakemode (VO = ±10 V, RL = 600 Ω)
TA = +25°C
TA = –40° to +85°C
Output Voltage Swing (VID = ±1.0 V)
Sleepmode (VCC = +15 V, VEE = –15 V)
RL = 1.0 MΩ
RL = 1.0 MΩ
Awakemode (VCC = +15 V, VEE = –15 V)
RL = 600 Ω
RL = 600 Ω
RL = 2.0 kΩ
RL = 2.0 kΩ
Awakemode (VCC = +2.5 V, VEE = –2.5 V)
RL = 600 Ω
RL = 600 Ω
Common Mode Rejection (VCM = ±13 V)
Sleepmode and Awakemode
Power Supply Rejection (VCC/VEE = +15 V/–15 V,
5.0 V/–15 V , +15 V/–5.0 V)
Sleepmode and Awakemode
Output Transition Current
Sleepmode to Awakemode (Source/Sink)
(VS = ±15 V)
(VS = ±2.5 V)
Awakemode to Sleepmode (Source/Sink)
(VS = ±15 V)
(VS = ±2.5 V)
Output Short Circuit Current (Awakemode)
(VID = ±1.0 V , Output to Ground)
Source
Sink
Power Supply Current (per Amplifier) (ACL = 1, VO = 0V)
Sleepmode (VS = ±15 V)
TA = +25°C
TA = –40° to +85°C
Sleepmode (VS = ±2.5 V)
TA = +25°C
TA = –40° to +85°C
Awakemode (VS = ±15 V)
TA = +25°C
TA = –40° to +85°C
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
CC
FigureSymbolMinTypMaxUnit
5V
7A
8, 9, 10
11CMR
12PSR
13, 14
15, 16ISC
17I
I
I
ICR
VOL
V
V
V
V
V
V
V
O+
V
TH1
TH2
O+
O–
O+
O–
O+
O–
O–
–13
—
25
15
50
25
+13.5
—
+12.5
—
+13.3
—
+1.1
—
8090—
80100—
200
250
—
—
50
50
D
—
—
—
—
—
—
–14.8
+14.2
200
—
700
—
+14.2
–14.2
+13.6
–13.6
+14
–14
+1.6
–1.6
160
200
142
180
110
110
45
48
38
42
750
800
—
+13
—
—
—
—
—
–13.5
—
–12.5
—
–13.3
—
–1.1
—
—
90
140
—
—
65
70
65
—
800
900
V
kV/V
V
V
dB
dB
µA
mA
µA
MOTOROLA ANALOG IC DEVICE DATA
3
MC33102
AC ELECTRICAL CHARACTERISTICS
Characteristics
Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0)
Sleepmode (RL = 1.0 MΩ)
Awakemode (RL = 600 Ω)
Gain Bandwidth Product
Sleepmode (f = 10 kHz)
Awakemode (f = 20 kHz)
Sleepmode to Awakemode Transition T ime
(ACL = 0.1, Vin = 0 V to +5.0 V)
RL = 600 Ω
RL = 10 kΩ
Awakemode to Sleepmode Transition T ime22t
Unity Gain Frequency (Open Loop)
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
CC
FigureSymbolMinTypMaxUnit
18SR
19GBW
20, 21t
23, 25A
24, 26∅
29CS
30THD
31R
32e
33i
f
BW
R
C
tr1
tr2
0.10
1.0
0.25
3.5
—
—
—1.5—sec
U
M
M
P
O
in
in
n
n
—
—
—
—
—
—
—120—
—20—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.16
1.7
0.33
4.6
4.0
15
200
2500
13
12
60
60
0.005
0.016
0.031
1.0 k
96
1.3
0.17
0.4
4.0
28
9.0
0.01
0.05
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/µs
MHz
µs
kHz
dB
Degrees
dB
kHz
%
Ω
MΩ
pF
nV/ Hz√
pA/ Hz√
4
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 1. Maximum Power Dissipation
versus T emperature
2500
2000
1500
1000
500
, MAXIMUM POWER DISSIPATION (mW)
D(max)
P
0
–55–250255012585–40
MC33102D
MC33102P
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Input Offset V oltage Temperature
Coefficient Distribution (MC33102D Package)
35
Percent Sleepmode
30
Percent Awakemode
25
20
15
10
PERCENT OF AMPLIFIERS (%)
5.0
0
–5.0–15–10–5.005.01510
–4.0 –3.0 –2.0 –1.001.02.03.04.05.0
TCVIO, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/°C)
204 Amplifiers tested
from 3 wafer lots.
VCC = +15 V
VEE = –15 V
°
TA = –40
C to 85°C
Figure 2. Distribution of Input Offset Voltage
(MC33102D Package)
50
Percent Sleepmode
Percent Awakemode
40
30
20
PERCENT OF AMPLIFIERS (%)
10
0
–1.0
–0.8 –0.6 –0.4 –0.200.20.40.60.81.0
VIO, INPUT OFFSET VOLTAGE (mV)
Figure 4. Input Bias Current versus
Common Mode Input Voltage
10.5
9.5
8.5
7.5
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
6.5
I
Awakemode
VCM, COMMON MODE INPUT VOLTAGE (V)
Sleepmode
204 Amplifiers tested
from 3 wafer lots.
VCC = +15 V
VEE = –15 V
°
C
TA = 25
100
VCC = +15 V
VEE = –15 V
TA = 25
90
°
C
80
70
60
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
Figure 5. Input Common Mode V oltage Range
versus T emperature
V
CC
VCC–0.5
VCC–1.0
VEE+1.0
VEE+0.5
, INPUT COMMON MODE VOL TAGE RANGE (V)
ICR
V
VCC = +15 V
VEE = –15 V
∆
VIO = 5.0 mV
V
EE
–55–250255085125
–40
Sleepmode
Awakemode
Awakemode
TA, AMBIENT TEMPERATURE (°C)
MOTOROLA ANALOG IC DEVICE DATA
Sleepmode
Figure 6. Input Bias Current versus T emperature
10.0
Sleepmode
8.0
6.0
4.0
2.0
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
I
0
–55–250255085125–40
VCC = +15 V
VEE = –15 V
VCM = 0 V
TA, AMBIENT TEMPERATURE (°C)
Awakemode
100
80
60
40
20
0
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
5
MC33102
Figure 7. Open Loop Voltage Gain
versus T emperature
130
120
Awakemode (RL = 1.0 MΩ)
110
Sleepmode (RL = 1.0 MΩ)
100
, OPEN LOOP VOL TAGE GAIN (dB)
90
VOL
A
80
–55–250255085125
–40
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Output Voltage versus Frequency
30
25
pp
Figure 8. Output Voltage Swing
versus Supply V oltage
35
TA = 25°C
30
pp
25
20
15
10
, OUTPUT VOLTAGE (V)
O
V
5
0
03.06.09.0121815
VCC, VEE
Sleepmode (RL = 1.0 MΩ)
Awakemode (RL = 600 Ω)
, SUPPLY VOLTAGE (V)
Figure 10. Maximum Peak–to–Peak Output
V oltage Swing versus Load Resistance
30
25
20
Sleepmode
Ω
15
10
VCC = +15 V
, OUTPUT VOLT AGE (V )
VEE = –15 V
O
V
AV = +1.0
5.0
TA = 25
0
10010
(RL = 1.0 M
°
C
)
1.0 k10 k100 k500 k
f, FREQUENCY (Hz)
Awakemode
(RL = 600
Ω
)
Figure 11. Common Mode Rejection
versus Frequency
100120
80
60
Sleepmode
40
VCC = +15 V
VEE = –15 V
VCM = 0 V
20
∆
CMR, COMMON MODE REJECTION (dB)
VCM = ±1.5 V
TA = 25
0
10
°
C
1001.0 k10 k100 k1.0 M101001.0 k10 k100 k1.0 M
Awakemode
f, FREQUENCY (Hz)
20
15
10
, OUTPUT VOLTAGE SWING (Vpp)
O
V
5.0
RL, LOAD RESISTANCE T O GROUND (
Figure 12. Power Supply Rejection
+PSR
VCC = +15 V
VEE = –15 V
∆
VCC = ±1.5 V
TA = 25
0
Sleepmode
°
C
100
80
60
40
20
PSR, POWER SUPPLY REJECTION (dB)
Awakemode
VCC = +15 V
VEE = –15 V
f = 1.0 kHz
°
C
TA = 25
1001.0 k10 k
Ω
)
versus Frequency
+PSR
Awakemode
–PSR
–PSR
Sleepmode
f, FREQUENCY (Hz)
Awakemode
6
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 13. Sleepmode to Awakemode
Current Threshold versus Supply V oltage
200
µ
190
180
TA = 25°C
170
TA = –55°C
160
, CURRENT THRESHOLD ( A)
150
TH1
I
140
3.06.09.01218153.06.09.0121815
VCC, VEE
, SUPPLY VOLTAGE (V)
TA = 125°C
190
µ
180
170
160
150
140
, CURRENT THRESHOLD ( A)
TH2
I
130
120
Figure 15. Output Short Circuit Current
versus Output Voltage
120150
100
Source
80
60
VCC = +15 V
40
VEE = –15 V
±
1.0 V
VID =
20
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I
0
03.06.09.01215–40
Ω
RL < 10
Awakemode
VO
, OUTPUT VOLTAGE (V)
Sink
140
130
120
110
100
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I
Figure 14. Awakemode to Sleepmode
Current Threshold versus Supply V oltage
TA = 25°C
TA = –55°C
TA = 125°C
VCC, VEE
, SUPPLY VOLTAGE (V)
Figure 16. Output Short Circuit Current
versus T emperature
Source
Sink
90
80
70
–55–250255085125
TA, AMBIENT TEMPERATURE (°C)
VCC = +15 V
VEE = –15 V
±
1.0 V
VID =
Ω
RL < 10
Awakemode
Figure 17. Power Supply Current Per Amplifier
versus Temperature
600.20
µ
55
50
45
Sleepmode (µA)
40
35
, SUPPLY CURRENT PER AMPLIFIER ( A)
D
I
30
–55–250255085125–55–250255085125
–40–40
TA, AMBIENT TEMPERATURE (°C)
Awakemode (mA)
VCC = +15 V
VEE = –15 V
No Load
1.2
1.0
0.8
0.6
0.4
0.2
0
, SUPPLY CURRENT PER AMPLIFIER (mA)
D
I
0.18
µ
0.16
0.14
, SLEW RATE (V/ s)
SR
0.12
0.10
Figure 18. Slew Rate versus T emperature
VCC = +15 V
VEE = –15 V
∆
Vin = –5.0 V to +5.0 V
Sleepmode (RL = 1.0 MΩ)
TA, AMBIENT TEMPERATURE (°C)
Awakemode (RL = 600 Ω)
MOTOROLA ANALOG IC DEVICE DATA
2.0
1.8
1.6
1.4
1.2
1.0
7
µ
SLEW RATE (V/ s)
SR,
MC33102
350
300
250
GBW, GAIN BANDWIDTH PRODUCT (KHz)
200
–55–250255085125–40
Figure 19. Gain Bandwidth Product
versus T emperature
Awakemode (MHz)
Sleepmode (kHz)
VCC = +15 V
VEE = –15 V
f = 20 kHz
TA, AMBIENT TEMPERATURE (°C)
Figure 21. Sleepmode to Awakemode
Transition T ime
RL = 600
Figure 20. Sleepmode to Awakemode
Transition T ime
5.0
4.5
4.0
3.5
GBW, GAIN BANDWIDTH PRODUCT (KHz)
, PEAK VOLTAGE (1.0 V/DIV)
P
V
t, TIME (5.0 µs/DIV)
RL = 10 k
Figure 22. Awakemode to Sleepmode
Transition T ime versus Supply Voltage
2.0
Ω
1.5
TA = 25°C
1.0
, PEAK VOLTAGE (1.0 V/DIV)
P
V
t, TIME (2.0 µs/DIV)
Figure 23. Gain Margin versus Differential
Source Resistance
15
13
11
9.0
VCC = +15 V
, GAIN MARGIN (dB)
VEE = –15 V
m
A
RT = R1 + R2
7.0
VO = 0 V
°
C
TA = 25
5.0
101001.0 k10 k101001.0 k10 k100 k
RT, DIFFERENTIAL SOURCE RESISTANCE (
Sleepmode
Awakemode
R1
R2
V
O
Ω
)
, TRANSITION TIME (SEC)
0.5
tr2
t
0
3.06.09.0121815
VEE
VCC,
Figure 24. Phase Margin versus Differential
Source Resistance
70
60
VCC = +15 V
50
VEE = –15 V
RT = R1 + R2
40
VO = 0 V
°
C
TA = 25
30
, PHASE MARGIN (DEG)
20
m
∅
10
R1
R2
0
RT, DIFFERENTIAL SOURCE RESISTANCE (
V
O
TA = –55°C
TA = 125°C
, SUPPLY VOLTAGE (V)
Sleepmode
Awakemode
Ω
)
8
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 25. Open Loop Gain Margin versus
Output Load Capacitance
14
12
10
8.0
6.0
VCC = +15 V
4.0
VEE = –15 V
, OPEN LOOP GAIN MARGIN (dB)
m
VO = 0 V
2.0
A
0
10
CL, OUTPUT LOAD CAPACITANCE (pF)
Awakemode
Sleepmode
1001.0 k101001.0 k10 k
Figure 27. Sleepmode V oltage Gain and Phase
versus Frequency
70
50
30
10
, VOLTAGE GAIN (dB)
V
TA = 25°C
A
RL = 1.0 M
–10
CL < 10 pF
Sleepmode
–30
10 k
2A
Ω
2B
100 k1.0 M10 M30 k100 k1.0 M10 M
f, FREQUENCY (Hz)
1A) Phase, VS = ±18 V
2A) Phase, VS =
1B) Gain, VS =
2B) Gain, VS =
1A
1B
±
±
±
2.5 V
18 V
2.5 V
70
60
50
40
30
20
, PHASE MARGIN (DEGREES)
m
∅
10
0
Figure 28. Awakemode Voltage Gain and
40
80
120
160
, EXCESS PHASE (DEGREES)
200
θ
240
70
50
30
10
, VOLTAGE GAIN (dB)
V
1A) Phase, VS = ±18 V
A
–10
2A) Phase, VS =
1B) Gain, VS =
2B) Gain, VS =
–30
Figure 26. Phase Margin versus
Output Load Capacitance
VCC = +15 V
VEE = –15 V
VO = 0 V
Awakemode
Sleepmode
CL, OUTPUT LOAD CAPACITANCE (pF)
Phase versus Frequency
TA = 25°C
RL = 600
CL < 10 pF
Awakemode
1A
2A
2B
±
2.5 V
±
18 V
±
2.5 V
f, FREQUENCY (Hz)
1B
40
Ω
80
120
160
, EXCESS PHASE (DEGREES)
200
θ
240
Figure 30. T otal Harmonic Distortion
Figure 29. Channel Separation versus Frequency
140
120
100
80
60
40
VCC = +15 V
VEE = –15 V
CS, CHANNEL SEPARATION (dB)
20
0
1001.0 k10 k100 k1001.0 k10 k100 k
Ω
RL = 600
Awakemode
f, FREQUENCY (Hz)
100
10
1.0
0.1
0.01
THD, TOT AL HARMONIC DISTORTION (%)
0.001
VCC = +15 V
VEE = –15 V
Ω
RL = 600
versus Frequency
VO = 2.0 Vpp
°
C
TA = 25
Awakemode
AV = +1000
AV = +100
AV = +10
f, FREQUENCY (Hz)
AV = +1.0
MOTOROLA ANALOG IC DEVICE DATA
9
MC33102
Figure 31. Awakemode Output Impedance
versus Frequency
250
VCC = +15 V
VEE = –15 V
Ω
200
VCM = 0 V
VO = 0 V
°
C
TA = 25
150
Awakemode
AV = 100
100
, OUTPUT IMPEDANCE ()
AV = 1000
O
50
Z
0
1.0 k10 k1.0 M10 M100 k
f, FREQUENCY (Hz)
AV = 10
Figure 33. Current Noise versus Frequency
1.0
VCC = +15 V
0.8
VEE = –15 V
TA = 25
0.6
(RS = 10 k)
0.4
°
C
RS
AV = 1.0
Figure 32. Input Referred Noise V oltage
versus Frequency
100
VCC = +15 V
VEE = –15 V
°
C
TA = 25
50
10
5.0
1010010 k100 k1.0 k
n
e , INPUT REFERRED NOISE VOLTAGE (nV/ Hz)
f, FREQUENCY (Hz)
Sleepmode
Awakemode
V
O
Figure 34. Percent Overshoot
versus Load Capacitance
70
V
O
VCC = +15 V
VEE = –15 V
60
TA = 25
50
40
°
C
Sleepmode
Ω
(RL = 1.0 M
)
os, PERCENT OVERSHOOT (%)
30
20
10
0
10
, PEAK VOLTAGE (5.0 V/DIV)
P
V
Awakemode
(RL = 600
CL, LOAD CAPACITANCE (pF)
Figure 36. Awakemode Large Signal
Transient Response
RL = 600
Awakemode
0.2
n
i , INPUT NOISE CURRENT (pA/ Hz)
0.1
1010010 k100 k1.0 k1001.0 k
f, FREQUENCY (Hz)
Sleepmode
Figure 35. Sleepmode Large Signal
Transient Response
RL =
R
, PEAK VOLTAGE (5.0 V/DIV)
P
V
Ω
)
Ω
10
t, TIME (50 µs/DIV)
t, TIME (5.0 µs/DIV)
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 37. Sleepmode Small Signal
Transient Response
RL =
R
CL = 0 pF
, PEAK VOLTAGE (50 mV/DIV)
P
V
t, TIME (50 µs/DIV)
CIRCUIT INFORMATION
The MC33102 was designed primarily for applications
where high performance (which requires higher current drain)
is required only part of the time. The two–state feature of this
op amp enables it to conserve power during idle times, yet be
powered up and ready for an input signal. Possible
applications include laptop computers, automotive, cordless
phones, baby monitors, and battery operated test equipment.
Although most applications will require low power
consumption, this device can be used in any application
where better efficiency and higher performance is needed.
The Sleep–Mode amplifier has two states; a sleepmode
and an awakemode. In the sleepmode state, the amplifier is
active and functions as a typical micropower op amp. When a
signal is applied to the amplifier causing it to source or sink
sufficient current (see Figure 13), the amplifier will
automatically switch to the awakemode. See Figures 20 and
21 for transition times with 600 Ω and 10 kΩ loads.
Figure 38. Awakemode Small Signal
Transient Response
RL = 600
Ω
CL = 0 pF
, PEAK VOLTAGE (50 mV/DIV)
P
V
t, TIME (50 µs/DIV)
The awakemode uses higher drain current to provide a
high slew rate, gain bandwidth, and output current capability .
In the awakemode, this amplifier can drive 27 Vpp into a
600 Ω load with VS = ±15 V.
An internal delay circuit is used to prevent the amplifier
from returning to the sleepmode at every zero crossing. This
delay circuit also eliminates the crossover distortion
commonly found in micropower amplifiers. This amplifier can
process frequencies as low as 1.0 Hz without the amplifier
returning to sleepmode, depending on the load.
The first stage PNP differential amplifier provides low noise
performance in both the sleep and awake modes, and an all
NPN output stage provides symmetrical source and sink AC
frequency response.
APPLICATIONS INFORMATION
The MC33102 will begin to function at power supply
voltages as low as VS = ±1.0 V at room temperature. (At this
voltage, the output voltage swing will be limited to a few
hundred millivolts.) The input voltages must range between
VCC and VEE supply voltages as shown in the maximum
rating table. Specifically, allowing the input to go more
negative than 0.3 V below VEE may cause product
damage. Also, exceeding the input common mode voltage
range on either input may cause phase reversal, even if the
inputs are between VCC and VEE.
When power is initially applied, the part may start to
operate in the awakemode. This is because of the currents
generated due to charging of internal capacitors. When this
occurs and the sleepmode state is desired, the user will have
to wait approximately 1.5 seconds before the device will
switch back to the sleepmode. T o prevent this from occurring,
ramp the power supplies from 1.0 V to full supply . Notice that
the device is more prone to switch into the awakemode when
VEE is adjusted than with a similar change in VCC.
The amplifier is designed to switch from sleepmode to
awakemode whenever the output current exceeds a preset
MOTOROLA ANALOG IC DEVICE DATA
current threshold (ITH) of approximately 160 µA. As a result,
the output switching threshold voltage (VST) is controlled by
the output loading resistance (RL). This loading can be a load
resistor, feedback resistors, or both. Then:
VST = (160 µA) × R
L
Large valued load resistors require a large output voltage
to switch, but reduce unwanted transitions to the
awakemode. For instance, in cases where the amplifier is
connected with a large closed loop gain (ACL), the input offset
voltage (VIO) is multiplied by the gain at the output and could
produce an output voltage exceeding VST with no input
signal applied.
Small values of RL allow rapid transition to the awakemode
because most of the transition time is consumed slewing in
the sleepmode until VST is reached (see Figures 20, 21). The
output switching threshold voltage VST is higher for larger
values of RL, requiring the amplifier to slew longer in the
slower sleepmode state before switching to the awakemode.
11
MC33102
The transition time (t
awake mode is:
= tD = ITH (RL/SR
t
tr1
Where:
Although typically 160 µA, ITH varies with supply voltage
and temperature. In general, any current loading on the
output which causes a current greater than ITH to flow will
switch the amplifier into the awakemode. This includes
transition currents such as those generated by charging load
capacitances. In fact, the maximum capacitance that can be
driven while attempting to remain in the sleepmode is
approximately 1000 pF.
Any electrical noise seen at the output of the MC33102
may also cause the device to transition to the awakemode. T o
= Amplifier delay (<1.0 µs)
t
D
= Output threshold current for
I
TH
= more transition (160 µA)
R
= Load resistance
L
SR
sleepmode
C
L(max)
) required to switch from sleep to
tr1
sleepmode
= Sleepmode slew rate (0.16 V/µs)
= ITH/SR
= 160 µA/(0.16 V/µs)
= 1000 pF
sleepmode
)
minimize this problem, a resistor may be added in series with
the output of the device (inserted as close to the device as
possible) to isolate the op amp from both parasitic and load
capacitance.
The awakemode to sleepmode transition time is controlled
by an internal delay circuit, which is necessary to prevent the
amplifier from going to sleep during every zero crossing. This
time is a function of supply voltage and temperature as
shown in Figure 22.
Gain bandwidth product (GBW) in both modes is an
important system design consideration when using a
sleepmode amplifier. The amplifier has been designed to
obtain the maximum GBW in both modes. “Smooth” AC
transitions between modes with no noticeable change in the
amplitude of the output voltage waveform will occur as long
as the closed loop gains (ACL) in both modes are
substantially equal at the frequency of operation. For smooth
AC transitions:
Where: A
(A
CLsleepmode
CLsleepmode
A
CLsleepmode
BW = The required system bandwidth
BW = or operating frequency
) (BW) < GBW
= Closed loop gain in
= the sleepmode
sleepmode
TESTING INFORMATION
To determine if the MC33102 is in the awakemode or the
sleepmode, the power supply currents (ID+ and ID–) must be
measured. When the magnitude of either power supply
current exceeds 400 µA, the device is in the awakemode.
When the magnitudes of both supply currents are less than
400 µA, the device is in the sleepmode. Since the total supply
current is typically ten times higher in the awakemode than
the sleepmode, the two states are easily distinguishable.
The measured value of ID+ equals the ID of both devices
(for a dual op amp) plus the output source current of device A
and the output source current of device B. Similarly, the
measured value of ID– is equal to the ID– of both devices plus
the output sink current of each device. I
is the sum
out
of the currents caused by both the feedback loop and load
resistance. The total I
measured ID to obtain the correct ID of the dual op amp.
An accurate way to measure the awakemode I
on automatic test equipment is to remove the I
both Channel A and B. Then measure the ID values before
the device goes back to the sleepmode state. The transition
will take typically 1.5 seconds with ±15 V power supplies.
The large signal sleepmode testing in the characterization
was accomplished with a 1.0 MΩ load resistor which ensured
the device would remain in sleepmode despite large
voltage swings.
needs to be subtracted from the
out
out
current on
out
current
12
MOTOROLA ANALOG IC DEVICE DATA
MC33102
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
NOTE 2
A
E
B
C
A1
–T–
SEATING
PLANE
H
D
58
0.25MB
1
H
4
e
A
B
SS
A0.25MCB
58
14
F
–A–
N
D
G
0.13 (0.005)B
SEATING
PLANE
–B–
C
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIMMINMAX
A1.351.75
A10.100.25
B0.350.49
C0.180.25
D4.805.00
E
3.804.00
1.27 BSCe
H5.806.20
h
0.250.50
L0.401.25
0 7
q
__
0.10
C
M
h
X 45
_
q
L
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
L
J
K
A
T
M
M
M
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L7.62 BSC0.300 BSC
M––– 10 ––– 10
N 0.761.010.0300.040
INCHESMILLIMETERS
__
MOTOROLA ANALOG IC DEVICE DATA
13
MC33102
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola
was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
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HOME PAGE: http://motorola.com/sps/
14
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MOTOROLA ANALOG IC DEVICE DATA
Mfax is a trademark of Motorola, Inc.
MC33102/D
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