Motorola MC33102P, MC33102D Datasheet

    
Order this document by MC33102/D

The MC33102 dual operational amplifier is an innovative design concept employing Sleep–Mode technology. Sleep–Mode amplifiers have two separate states, a sleepmode and an awakemode. In sleepmode, the amplifier is active and waiting for an input signal. When a signal is applied causing the amplifier to source or sink 160 µA (typically) to the load, it will automatically switch to the awakemode which offers higher slew rate, gain bandwidth, and drive capability.
Two States: “Sleepmode” (Micropower) and “A wakemode”
(High Performance)
Switches from Sleepmode to Awakemode in 4.0 µs when Output Current
Exceeds the Threshold Current (RL = 600 )
Independent Sleepmode Function for Each Op Amp
Standard Pinouts – No Additional Pins or Components Required
Sleepmode State – Can Be Used in the Low Current Idle State as a
Fully Functional Micropower Amplifier
Automatic Return to Sleepmode when Output Current Drops Below
Threshold
No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode
Drop–in Replacement for Many Other Dual Op Amps
ESD Clamps on Inputs Increase Reliability without Affecting Device
Operation
Sleep–Mode is a trademark of Motorola, Inc.
TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE
Characteristic
Low Current Drain 45 750 µA Low Input Offset Voltage 0.15 0.15 mV High Output Current Capability 0.15 50 mA Low T.C. of Input Offset Voltage 1.0 1.0 µV/°C High Gain Bandwidth (@ 20 kHz) 0.33 4.6 MHz High Slew Rate 0.16 1.7 V/µs Low Noise (@ 1.0 kHz) 28 9.0
Sleepmode
(Typical)
MAXIMUM RATINGS
Ratings Symbol Value Unit
Supply Voltage (VCC to VEE) V Input Differential Voltage Range
Input Voltage Range Output Short Circuit Duration (Note 2) t Maximum Junction Temperature
Storage Temperature
Maximum Power Dissipation P
NOTES: 1. Either or both input voltages should not exceed VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (refer to Figure 1).
V
IDR
V
SC T
T
S
IR
J
stg
D
Awakemode
(Typical) Unit
+36 V
(Note 1) V
(Note 2) sec
+150
–65 to +150
(Note 2) mW
nV/ Hz
°C
DUAL SLEEP–MODE
SEMICONDUCTOR
TECHNICAL DATA
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
P SUFFIX
PLASTIC PACKAGE
CASE 626
PIN CONNECTIONS
Inputs 1
V
EE
ORDERING INFORMATION
Device
MC33102D MC33102P
Temperature Range
TA = – 40° to +85°C
1Output 1 V 2
1
3 4
(Dual, Top View)
Operating
8
1
8
1
8
CC
Output 2
7 6
2
5
Plastic DIP
Inputs 2
Package
SO–8
MOTOROLA ANALOG IC DEVICE DATA
Motorola, Inc. 1996 Rev 0
1
MC33102
Simplified Block Diagram
V
in
Fractional
Load Current
Detector
Op Amp
I
Bias
Sleepmode
Current
Regulator
Current
Threshold
Detector
% of I
L
Buffer Buffer
I
I
L
V
out
R
L
I
sleep
ref
Awakemode
Current
Regulator
Awake to
Sleepmode
Delay Circuit
C
Storage
I
awake
Enable
I
Hysteresis
I
Enable
DC ELECTRICAL CHARACTERISTICS (V
Characteristics
Input Offset Voltage (RS = 50 , VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
Input Offset Voltage Temperature Coefficient
(RS = 50 , VCM = 0 V, VO = 0 V) TA = –40° to +85°C (Sleepmode and Awakemode)
Input Bias Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
Input Offset Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
CC
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
Figure Symbol Min Typ Max Unit
2 VIO
3 VIO/T
4, 6 I
IIO
IB
— —
— —
1.0
— —
— —
— —
— —
0.15 —
0.15 —
8.0 —
100
0.5 —
5.0 —
mV
2.0
3.0
2.0
3.0 µV/°C
nA
50 60
500 600
nA
5.0
6.0
50 60
2
MOTOROLA ANALOG IC DEVICE DATA
MC33102
DC ELECTRICAL CHARACTERISTICS (V
Characteristics
Common Mode Input Voltage Range
(VIO = 5.0 mV, VO = 0 V)
Sleepmode and Awakemode
Large Signal Voltage Gain
Sleepmode (RL = 1.0 M)
TA = +25°C TA = –40° to +85°C
Awakemode (VO = ±10 V, RL = 600 )
TA = +25°C TA = –40° to +85°C
Output Voltage Swing (VID = ±1.0 V)
Sleepmode (VCC = +15 V, VEE = –15 V)
RL = 1.0 M RL = 1.0 M
Awakemode (VCC = +15 V, VEE = –15 V)
RL = 600 RL = 600 RL = 2.0 k RL = 2.0 k
Awakemode (VCC = +2.5 V, VEE = –2.5 V)
RL = 600 RL = 600
Common Mode Rejection (VCM = ±13 V)
Sleepmode and Awakemode
Power Supply Rejection (VCC/VEE = +15 V/–15 V,
5.0 V/–15 V , +15 V/–5.0 V) Sleepmode and Awakemode
Output Transition Current
Sleepmode to Awakemode (Source/Sink)
(VS = ±15 V) (VS = ±2.5 V)
Awakemode to Sleepmode (Source/Sink)
(VS = ±15 V) (VS = ±2.5 V)
Output Short Circuit Current (Awakemode)
(VID = ±1.0 V , Output to Ground)
Source Sink
Power Supply Current (per Amplifier) (ACL = 1, VO = 0V)
Sleepmode (VS = ±15 V)
TA = +25°C TA = –40° to +85°C
Sleepmode (VS = ±2.5 V)
TA = +25°C TA = –40° to +85°C
Awakemode (VS = ±15 V)
TA = +25°C TA = –40° to +85°C
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
CC
Figure Symbol Min Typ Max Unit
5 V
7 A
8, 9, 10
11 CMR
12 PSR
13, 14
15, 16 ISC
17 I
I
I
ICR
VOL
V V
V V V V
V
O+
V
TH1
TH2
O+ O–
O+ O– O+ O–
O–
–13
25 15
50 25
+13.5
+12.5
+13.3
+1.1
80 90
80 100
200 250
— —
50 50
D
— —
— —
— —
–14.8 +14.2
200
700
+14.2 –14.2
+13.6 –13.6
+14 –14
+1.6 –1.6
160 200
142 180
110 110
45 48
38 42
750 800
+13
— —
— —
–13.5
–12.5
–13.3
–1.1
— —
90
140
— —
65 70
65 —
800 900
V
kV/V
V
V
dB
dB
µA
mA
µA
MOTOROLA ANALOG IC DEVICE DATA
3
MC33102
AC ELECTRICAL CHARACTERISTICS
Characteristics
Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0)
Sleepmode (RL = 1.0 M) Awakemode (RL = 600 )
Gain Bandwidth Product
Sleepmode (f = 10 kHz) Awakemode (f = 20 kHz)
Sleepmode to Awakemode Transition T ime
(ACL = 0.1, Vin = 0 V to +5.0 V)
RL = 600
RL = 10 k Awakemode to Sleepmode Transition T ime 22 t Unity Gain Frequency (Open Loop)
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
Gain Margin
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
Phase Margin
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
Channel Separation (f = 100 Hz to 20 kHz)
Sleepmode and Awakemode
Power Bandwidth (Awakemode)
(VO = 10 Vpp, RL = 100 k, THD 1%)
Total Harmonic Distortion (VO = 2.0 Vpp, AV = 1.0)
Awakemode (RL = 600 )
f = 1.0 kHz
f = 10 kHz
f = 20 kHz DC Output Impedance (VO = 0 V, AV = 10, IQ = 10 µA)
Sleepmode Awakemode
Differential Input Resistance (VCM = 0 V)
Sleepmode Awakemode
Differential Input Capacitance (VCM = 0 V)
Sleepmode Awakemode
Equivalent Input Noise V oltage (f = 1.0 kHz, RS = 100 )
Sleepmode Awakemode
Equivalent Input Noise Current (f = 1.0 kHz)
Sleepmode Awakemode
(V
= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
CC
Figure Symbol Min Typ Max Unit
18 SR
19 GBW
20, 21 t
23, 25 A
24, 26
29 CS
30 THD
31 R
32 e
33 i
f
BW
R
C
tr1
tr2
0.10
1.0
0.25
3.5
— —
1.5 sec
U
M
M
P
O
in
in
n
n
— —
— —
— —
120
20
— — —
— —
— —
— —
— —
— —
0.16
1.7
0.33
4.6
4.0 15
200
2500
13 12
60 60
0.005
0.016
0.031
1.0 k 96
1.3
0.17
0.4
4.0
28
9.0
0.01
0.05
— —
— —
— —
— —
— —
— —
— — —
— —
— —
— —
— —
— —
V/µs
MHz
µs
kHz
dB
Degrees
dB
kHz
%
M
pF
nV/ Hz
pA/ Hz
4
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 1. Maximum Power Dissipation
versus T emperature
2500
2000
1500
1000
500
, MAXIMUM POWER DISSIPATION (mW)
D(max)
P
0
–55 –25 0 25 50 12585–40
MC33102D
MC33102P
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Input Offset V oltage Temperature
Coefficient Distribution (MC33102D Package)
35
Percent Sleepmode
30
Percent Awakemode 25 20 15
10
PERCENT OF AMPLIFIERS (%)
5.0 0
–5.0 –15 –10 –5.0 0 5.0 1510
–4.0 –3.0 –2.0 –1.0 0 1.0 2.0 3.0 4.0 5.0
TCVIO, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/°C)
204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V
°
TA = –40
C to 85°C
Figure 2. Distribution of Input Offset Voltage
(MC33102D Package)
50
Percent Sleepmode Percent Awakemode
40
30
20
PERCENT OF AMPLIFIERS (%)
10
0
–1.0
–0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0
VIO, INPUT OFFSET VOLTAGE (mV)
Figure 4. Input Bias Current versus
Common Mode Input Voltage
10.5
9.5
8.5
7.5
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
6.5
I
Awakemode
VCM, COMMON MODE INPUT VOLTAGE (V)
Sleepmode
204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V
°
C
TA = 25
100
VCC = +15 V VEE = –15 V TA = 25
90
°
C
80
70
60
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
Figure 5. Input Common Mode V oltage Range
versus T emperature
V
CC
VCC–0.5
VCC–1.0
VEE+1.0
VEE+0.5
, INPUT COMMON MODE VOL TAGE RANGE (V)
ICR
V
VCC = +15 V VEE = –15 V
VIO = 5.0 mV
V
EE
–55 –25 0 25 50 85 125
–40
Sleepmode
Awakemode
Awakemode
TA, AMBIENT TEMPERATURE (°C)
MOTOROLA ANALOG IC DEVICE DATA
Sleepmode
Figure 6. Input Bias Current versus T emperature
10.0 Sleepmode
8.0
6.0
4.0
2.0
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
I
0
–55 –25 0 25 50 85 125–40
VCC = +15 V VEE = –15 V VCM = 0 V
TA, AMBIENT TEMPERATURE (°C)
Awakemode
100
80
60
40
20
0
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
5
MC33102
Figure 7. Open Loop Voltage Gain
versus T emperature
130
120
Awakemode (RL = 1.0 MΩ)
110
Sleepmode (RL = 1.0 MΩ)
100
, OPEN LOOP VOL TAGE GAIN (dB)
90
VOL
A
80
–55 –25 0 25 50 85 125
–40
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Output Voltage versus Frequency
30
25
pp
Figure 8. Output Voltage Swing
versus Supply V oltage
35
TA = 25°C
30
pp
25 20 15 10
, OUTPUT VOLTAGE (V )
O
V
5 0
0 3.0 6.0 9.0 12 1815
VCC, VEE
Sleepmode (RL = 1.0 MΩ)
Awakemode (RL = 600 Ω)
, SUPPLY VOLTAGE (V)
Figure 10. Maximum Peak–to–Peak Output
V oltage Swing versus Load Resistance
30
25
20
Sleepmode
15
10
VCC = +15 V
, OUTPUT VOLT AGE (V )
VEE = –15 V
O
V
AV = +1.0
5.0 TA = 25
0
100 10
(RL = 1.0 M
°
C
)
1.0 k 10 k 100 k 500 k f, FREQUENCY (Hz)
Awakemode
(RL = 600
)
Figure 11. Common Mode Rejection
versus Frequency
100 120
80
60
Sleepmode
40
VCC = +15 V VEE = –15 V VCM = 0 V
20
CMR, COMMON MODE REJECTION (dB)
VCM = ±1.5 V
TA = 25
0
10
°
C
100 1.0 k 10 k 100 k 1.0 M 10 100 1.0 k 10 k 100 k 1.0 M
Awakemode
f, FREQUENCY (Hz)
20
15
10
, OUTPUT VOLTAGE SWING (Vpp)
O
V
5.0 RL, LOAD RESISTANCE T O GROUND (
Figure 12. Power Supply Rejection
+PSR
VCC = +15 V VEE = –15 V
VCC = ±1.5 V
TA = 25
0
Sleepmode
°
C
100
80
60
40
20
PSR, POWER SUPPLY REJECTION (dB)
Awakemode
VCC = +15 V VEE = –15 V f = 1.0 kHz
°
C
TA = 25
100 1.0 k 10 k
)
versus Frequency
+PSR
Awakemode
–PSR
–PSR
Sleepmode
f, FREQUENCY (Hz)
Awakemode
6
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 13. Sleepmode to Awakemode
Current Threshold versus Supply V oltage
200
µ
190
180
TA = 25°C
170
TA = –55°C
160
, CURRENT THRESHOLD ( A)
150
TH1
I
140
3.0 6.0 9.0 12 1815 3.0 6.0 9.0 12 1815 VCC, VEE
, SUPPLY VOLTAGE (V)
TA = 125°C
190
µ
180 170 160 150 140
, CURRENT THRESHOLD ( A)
TH2
I
130 120
Figure 15. Output Short Circuit Current
versus Output Voltage
120 150
100
Source
80
60
VCC = +15 V
40
VEE = –15 V
±
1.0 V
VID =
20
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I
0

0 3.0 6.0 9.0 12 15 –40
RL < 10 Awakemode
VO
, OUTPUT VOLTAGE (V)
Sink
140 130 120
110
100
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I

Figure 14. Awakemode to Sleepmode
Current Threshold versus Supply V oltage
TA = 25°C
TA = –55°C
TA = 125°C
VCC, VEE
, SUPPLY VOLTAGE (V)
Figure 16. Output Short Circuit Current
versus T emperature
Source
Sink
90 80 70
–55 –25 0 25 50 85 125
TA, AMBIENT TEMPERATURE (°C)
VCC = +15 V VEE = –15 V
±
1.0 V
VID =
RL < 10 Awakemode
Figure 17. Power Supply Current Per Amplifier
versus Temperature
60 0.20
µ
55
50
45
Sleepmode (µA)
40
35
, SUPPLY CURRENT PER AMPLIFIER ( A)
D
I
30
–55 –25 0 25 50 85 125 –55 –25 0 25 50 85 125
–40 –40
TA, AMBIENT TEMPERATURE (°C)
Awakemode (mA)
VCC = +15 V VEE = –15 V No Load
1.2
1.0
0.8
0.6
0.4
0.2
0
, SUPPLY CURRENT PER AMPLIFIER (mA)
D
I
0.18
µ
0.16
0.14 , SLEW RATE (V/ s) SR
0.12
0.10
Figure 18. Slew Rate versus T emperature
VCC = +15 V VEE = –15 V
Vin = –5.0 V to +5.0 V
Sleepmode (RL = 1.0 MΩ)
TA, AMBIENT TEMPERATURE (°C)
Awakemode (RL = 600 Ω)
MOTOROLA ANALOG IC DEVICE DATA
2.0
1.8
1.6
1.4
1.2
1.0
7
µ
SLEW RATE (V/ s) SR,
MC33102
350
300
250
GBW, GAIN BANDWIDTH PRODUCT (KHz)
200
–55 –25 0 25 50 85 125–40
Figure 19. Gain Bandwidth Product
versus T emperature
Awakemode (MHz)
Sleepmode (kHz)
VCC = +15 V VEE = –15 V f = 20 kHz
TA, AMBIENT TEMPERATURE (°C)
Figure 21. Sleepmode to Awakemode
Transition T ime
RL = 600
Figure 20. Sleepmode to Awakemode
Transition T ime
5.0
4.5
4.0
3.5
GBW, GAIN BANDWIDTH PRODUCT (KHz)
, PEAK VOLTAGE (1.0 V/DIV)
P
V
t, TIME (5.0 µs/DIV)
RL = 10 k
Figure 22. Awakemode to Sleepmode
Transition T ime versus Supply Voltage
2.0
1.5
TA = 25°C
1.0
, PEAK VOLTAGE (1.0 V/DIV)
P
V
t, TIME (2.0 µs/DIV)
Figure 23. Gain Margin versus Differential
Source Resistance
15
13
11
9.0
VCC = +15 V
, GAIN MARGIN (dB)
VEE = –15 V
m
A
RT = R1 + R2
7.0
VO = 0 V
°
C
TA = 25
5.0 10 100 1.0 k 10 k 10 100 1.0 k 10 k 100 k
RT, DIFFERENTIAL SOURCE RESISTANCE (
Sleepmode
Awakemode
R1
R2
V
O
)
, TRANSITION TIME (SEC)
0.5
tr2
t
0
3.0 6.0 9.0 12 1815
VEE
VCC,
Figure 24. Phase Margin versus Differential
Source Resistance
70 60
VCC = +15 V
50
VEE = –15 V RT = R1 + R2
40
VO = 0 V
°
C
TA = 25
30
, PHASE MARGIN (DEG)
20
m
10
R1
R2
0
RT, DIFFERENTIAL SOURCE RESISTANCE (
V
O
TA = –55°C
TA = 125°C
, SUPPLY VOLTAGE (V)
Sleepmode
Awakemode
)
8
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 25. Open Loop Gain Margin versus
Output Load Capacitance
14 12 10
8.0
6.0 VCC = +15 V
4.0 VEE = –15 V
, OPEN LOOP GAIN MARGIN (dB)
m
VO = 0 V
2.0
A
0
10
CL, OUTPUT LOAD CAPACITANCE (pF)
Awakemode
Sleepmode
100 1.0 k 10 100 1.0 k 10 k
Figure 27. Sleepmode V oltage Gain and Phase
versus Frequency
70
50
30
10
, VOLTAGE GAIN (dB)
V
TA = 25°C
A
RL = 1.0 M
–10
CL < 10 pF Sleepmode
–30
10 k
2A
2B
100 k 1.0 M 10 M 30 k 100 k 1.0 M 10 M
f, FREQUENCY (Hz)
1A) Phase, VS = ±18 V 2A) Phase, VS = 1B) Gain, VS = 2B) Gain, VS =
1A
1B
± ±
±
2.5 V
18 V
2.5 V
70 60
50 40 30 20
, PHASE MARGIN (DEGREES)
m
10
0
Figure 28. Awakemode Voltage Gain and
40
80
120
160
, EXCESS PHASE (DEGREES)
200
θ
240
70
50
30
10
, VOLTAGE GAIN (dB)
V
1A) Phase, VS = ±18 V
A
–10
2A) Phase, VS = 1B) Gain, VS = 2B) Gain, VS =
–30
Figure 26. Phase Margin versus
Output Load Capacitance
VCC = +15 V VEE = –15 V VO = 0 V
Awakemode
Sleepmode
CL, OUTPUT LOAD CAPACITANCE (pF)
Phase versus Frequency
TA = 25°C RL = 600 CL < 10 pF Awakemode
1A
2A
2B
±
2.5 V
±
18 V
±
2.5 V
f, FREQUENCY (Hz)
1B
40
80
120
160
, EXCESS PHASE (DEGREES)
200
θ
240
Figure 30. T otal Harmonic Distortion
Figure 29. Channel Separation versus Frequency
140 120 100
80 60
40
VCC = +15 V VEE = –15 V
CS, CHANNEL SEPARATION (dB)
20
0
100 1.0 k 10 k 100 k 100 1.0 k 10 k 100 k
RL = 600 Awakemode
f, FREQUENCY (Hz)
100
10
1.0
0.1
0.01
THD, TOT AL HARMONIC DISTORTION (%)
0.001
VCC = +15 V VEE = –15 V
RL = 600
versus Frequency
VO = 2.0 Vpp
°
C
TA = 25 Awakemode
AV = +1000
AV = +100
AV = +10
f, FREQUENCY (Hz)
AV = +1.0
MOTOROLA ANALOG IC DEVICE DATA
9
MC33102
Figure 31. Awakemode Output Impedance
versus Frequency
250
VCC = +15 V VEE = –15 V
200
VCM = 0 V VO = 0 V
°
C
TA = 25
150
Awakemode
AV = 100
100
, OUTPUT IMPEDANCE ( )
AV = 1000
O
50
Z
0
1.0 k 10 k 1.0 M 10 M100 k f, FREQUENCY (Hz)
AV = 10
Figure 33. Current Noise versus Frequency
1.0 VCC = +15 V
0.8
VEE = –15 V TA = 25
0.6
(RS = 10 k)
0.4
°
C
RS
AV = 1.0
Figure 32. Input Referred Noise V oltage
versus Frequency
100
VCC = +15 V VEE = –15 V
°
C
TA = 25
50
10
5.0 10 100 10 k 100 k1.0 k
n
e , INPUT REFERRED NOISE VOLTAGE (nV/ Hz)
f, FREQUENCY (Hz)
Sleepmode
Awakemode
V
O
Figure 34. Percent Overshoot
versus Load Capacitance
70
V
O
VCC = +15 V VEE = –15 V
60
TA = 25
50 40
°
C
Sleepmode
(RL = 1.0 M
)
os, PERCENT OVERSHOOT (%)
30 20
10
0
10
, PEAK VOLTAGE (5.0 V/DIV)
P
V
Awakemode
(RL = 600
CL, LOAD CAPACITANCE (pF)
Figure 36. Awakemode Large Signal
Transient Response
RL = 600
Awakemode
0.2
n
i , INPUT NOISE CURRENT (pA/ Hz)
0.1 10 100 10 k 100 k1.0 k 100 1.0 k
f, FREQUENCY (Hz)
Sleepmode
Figure 35. Sleepmode Large Signal
Transient Response
RL =
R
, PEAK VOLTAGE (5.0 V/DIV)
P
V
)
10
t, TIME (50 µs/DIV)
t, TIME (5.0 µs/DIV)
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 37. Sleepmode Small Signal
Transient Response
RL =
R
CL = 0 pF
, PEAK VOLTAGE (50 mV/DIV)
P
V
t, TIME (50 µs/DIV)
CIRCUIT INFORMATION
The MC33102 was designed primarily for applications where high performance (which requires higher current drain) is required only part of the time. The two–state feature of this op amp enables it to conserve power during idle times, yet be powered up and ready for an input signal. Possible applications include laptop computers, automotive, cordless phones, baby monitors, and battery operated test equipment. Although most applications will require low power consumption, this device can be used in any application where better efficiency and higher performance is needed.
The Sleep–Mode amplifier has two states; a sleepmode and an awakemode. In the sleepmode state, the amplifier is active and functions as a typical micropower op amp. When a signal is applied to the amplifier causing it to source or sink sufficient current (see Figure 13), the amplifier will automatically switch to the awakemode. See Figures 20 and 21 for transition times with 600 and 10 k loads.
Figure 38. Awakemode Small Signal
Transient Response
RL = 600
CL = 0 pF
, PEAK VOLTAGE (50 mV/DIV)
P
V
t, TIME (50 µs/DIV)
The awakemode uses higher drain current to provide a high slew rate, gain bandwidth, and output current capability . In the awakemode, this amplifier can drive 27 Vpp into a 600 load with VS = ±15 V.
An internal delay circuit is used to prevent the amplifier from returning to the sleepmode at every zero crossing. This delay circuit also eliminates the crossover distortion commonly found in micropower amplifiers. This amplifier can process frequencies as low as 1.0 Hz without the amplifier returning to sleepmode, depending on the load.
The first stage PNP differential amplifier provides low noise performance in both the sleep and awake modes, and an all NPN output stage provides symmetrical source and sink AC frequency response.
APPLICATIONS INFORMATION
The MC33102 will begin to function at power supply voltages as low as VS = ±1.0 V at room temperature. (At this voltage, the output voltage swing will be limited to a few hundred millivolts.) The input voltages must range between VCC and VEE supply voltages as shown in the maximum rating table. Specifically, allowing the input to go more
negative than 0.3 V below VEE may cause product damage. Also, exceeding the input common mode voltage
range on either input may cause phase reversal, even if the inputs are between VCC and VEE.
When power is initially applied, the part may start to operate in the awakemode. This is because of the currents generated due to charging of internal capacitors. When this occurs and the sleepmode state is desired, the user will have to wait approximately 1.5 seconds before the device will switch back to the sleepmode. T o prevent this from occurring, ramp the power supplies from 1.0 V to full supply . Notice that the device is more prone to switch into the awakemode when VEE is adjusted than with a similar change in VCC.
The amplifier is designed to switch from sleepmode to awakemode whenever the output current exceeds a preset
MOTOROLA ANALOG IC DEVICE DATA
current threshold (ITH) of approximately 160 µA. As a result, the output switching threshold voltage (VST) is controlled by the output loading resistance (RL). This loading can be a load resistor, feedback resistors, or both. Then:
VST = (160 µA) × R
L
Large valued load resistors require a large output voltage to switch, but reduce unwanted transitions to the awakemode. For instance, in cases where the amplifier is connected with a large closed loop gain (ACL), the input offset voltage (VIO) is multiplied by the gain at the output and could produce an output voltage exceeding VST with no input signal applied.
Small values of RL allow rapid transition to the awakemode because most of the transition time is consumed slewing in the sleepmode until VST is reached (see Figures 20, 21). The output switching threshold voltage VST is higher for larger values of RL, requiring the amplifier to slew longer in the slower sleepmode state before switching to the awakemode.
11
MC33102
The transition time (t
awake mode is:
= tD = ITH (RL/SR
t
tr1
Where:
Although typically 160 µA, ITH varies with supply voltage and temperature. In general, any current loading on the output which causes a current greater than ITH to flow will switch the amplifier into the awakemode. This includes transition currents such as those generated by charging load capacitances. In fact, the maximum capacitance that can be driven while attempting to remain in the sleepmode is approximately 1000 pF.
Any electrical noise seen at the output of the MC33102 may also cause the device to transition to the awakemode. T o
= Amplifier delay (<1.0 µs)
t
D
= Output threshold current for
I
TH
= more transition (160 µA)
R
= Load resistance
L
SR
sleepmode
C
L(max)
) required to switch from sleep to
tr1
sleepmode
= Sleepmode slew rate (0.16 V/µs)
= ITH/SR = 160 µA/(0.16 V/µs)
= 1000 pF
sleepmode
)
minimize this problem, a resistor may be added in series with the output of the device (inserted as close to the device as possible) to isolate the op amp from both parasitic and load capacitance.
The awakemode to sleepmode transition time is controlled by an internal delay circuit, which is necessary to prevent the amplifier from going to sleep during every zero crossing. This time is a function of supply voltage and temperature as shown in Figure 22.
Gain bandwidth product (GBW) in both modes is an important system design consideration when using a sleepmode amplifier. The amplifier has been designed to obtain the maximum GBW in both modes. “Smooth” AC transitions between modes with no noticeable change in the amplitude of the output voltage waveform will occur as long as the closed loop gains (ACL) in both modes are substantially equal at the frequency of operation. For smooth AC transitions:
Where: A
(A
CLsleepmode
CLsleepmode
A
CLsleepmode
BW = The required system bandwidth
BW = or operating frequency
) (BW) < GBW
= Closed loop gain in
= the sleepmode
sleepmode
TESTING INFORMATION
To determine if the MC33102 is in the awakemode or the sleepmode, the power supply currents (ID+ and ID–) must be measured. When the magnitude of either power supply current exceeds 400 µA, the device is in the awakemode. When the magnitudes of both supply currents are less than 400 µA, the device is in the sleepmode. Since the total supply current is typically ten times higher in the awakemode than the sleepmode, the two states are easily distinguishable.
The measured value of ID+ equals the ID of both devices (for a dual op amp) plus the output source current of device A and the output source current of device B. Similarly, the measured value of ID– is equal to the ID– of both devices plus the output sink current of each device. I
is the sum
out
of the currents caused by both the feedback loop and load resistance. The total I measured ID to obtain the correct ID of the dual op amp.
An accurate way to measure the awakemode I on automatic test equipment is to remove the I both Channel A and B. Then measure the ID values before the device goes back to the sleepmode state. The transition will take typically 1.5 seconds with ±15 V power supplies.
The large signal sleepmode testing in the characterization was accomplished with a 1.0 M load resistor which ensured the device would remain in sleepmode despite large voltage swings.
needs to be subtracted from the
out
out current on
out
current
12
MOTOROLA ANALOG IC DEVICE DATA
MC33102
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
NOTE 2
A
E
B
C
A1
–T–
SEATING PLANE
H
D
58
0.25MB
1
H
4
e
A
B
SS
A0.25MCB
58
14
F
–A–
N
D
G
0.13 (0.005) B
SEATING PLANE
–B–
C
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.
MILLIMETERS
DIM MIN MAX
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E
3.80 4.00
1.27 BSCe
H 5.80 6.20
h
0.25 0.50
L 0.40 1.25
0 7
q
__
0.10
C
M
h
X 45
_
q
L
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
L
J
K
A
T
M
M
M
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC M ––– 10 ––– 10 N 0.76 1.01 0.030 0.040
INCHESMILLIMETERS
__
MOTOROLA ANALOG IC DEVICE DATA
13
MC33102
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Customer Focus Center: 1–800–521–6274 Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Moto rola Fax Back Sys tem – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
HOME PAGE: http://motorola.com/sps/
14
– http://sps.motorola.com/mfax/
MOTOROLA ANALOG IC DEVICE DATA
Mfax is a trademark of Motorola, Inc.
MC33102/D
Loading...