MOTOROLA MAC218AFP Technical data
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Isolated TO–220 Type Package for Ease of Mounting
• Gate Triggering in Four Modes
Order this document
by MAC218A6FP/D
MAC218AFP
Series
ISOLATED TRIACs
THYRISTORS
8 AMPERES RMS
400 thru 800 VOL TS
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218A6FP
On-State RMS Current (TC = +80°C ) Full Cycle Sine Wave 50 to 60 Hz
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz,
preceded and followed by rated current, TC = +80°C)
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) P
Average Gate Power (TC = +80°C, t = 8.3 ms) P
Peak Gate Current (Pulse Width = 1 µs) I
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) V
Operating Junction Temperature T
Storage Temperature Range T
(TJ = 25°C unless otherwise noted.)
Rating
(1)
(TJ = –40 to +125°C)
MAC218A8FP
MAC218A10FP
(2)
MT1
G
Symbol Value Unit
V
DRM
I
T(RMS
I
TSM
GM
G(AV)
GM
(ISO
J
stg
MT1
MT2
G
–40 to +125 °C
–40 to +150 °C
CASE 221C-02
STYLE 3
400
600
800
8 Amps
100 Amps
16 Watts
0.35 Watt
4 Amps
1500 Volts
Volts
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
1. V
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
body.
θJC
θCS
θJA
2.2 °C/W
2.2 (typ) °C/W
60 °C/W
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
ELECTRICAL CHARACTERISTICS
Characteristic
Peak Off–State Current (Either Direction)
(VD = Rated V
Peak On-State Voltage (Either Direction)
(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ω)
Trigger Mode
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
Holding Current (Either Direction)
(VD = 24 Vdc, Gate Open, Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off–State V oltage
(VD = Rated V
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off–State V oltage
(VD = Rated V
TJ = 125°C)
@ TJ = 125°C, Gate Open)
DRM
, ITM = 11.3 A, Commutating
DRM
, Exponential Voltage Rise, Gate Open,
DRM
(TC = 25°C unless otherwise noted.)
, RL = 10 kΩ, TJ = +125°C)
DRM
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
I
H
dv/dt
(c)
dv/dt — 100 — V/µs
— — 2 mA
— 1.7 2 Volts
mA
—
—
—
—
—
—
—
—
0.2
0.2
— — 50 mA
— 5 — V/µs
—
—
—
—
0.9
0.9
1.1
1.4
—
—
50
50
50
75
Volts
2
2
2
2.5
—
—
°
125
115
105
95
85
75
C
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
012345678
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
Figure 1. Current Derating
10
8
6
4
2
, AVERAGE POWER DISSIP ATION (WATTS)
D(AV)
P
0
012345678
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
Figure 2. Power Dissipation
2 Motorola Thyristor Device Data
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