MOTOROLA J310ZL1, J310RLRP, J310, J308 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by J308/D

JFET VHF/UHF Amplifiers

N–Channel — Depletion

GATE

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V Gate–Source Voltage V Forward Gate Current I Total Device Dissipation @ TA = 25°C

Derate above 25°C Junction Temperature Range T Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (T

Characteristic

DS GS

GF

P

D

J

stg

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = –1.0 µAdc, VDS = 0) Gate Reverse Current

(VGS = –15 Vdc, VDS = 0, TA = 25°C)

(VGS = –15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage

(VDS = 10 Vdc, ID = 1.0 nAdc) J308

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(VDS = 10 Vdc, VGS = 0) J308

Gate–Source Forward Voltage

(VDS = 0, IG = 1.0 mAdc)

(1)

SMALL–SIGNAL CHARACTERISTICS

Common–Source Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J308

Common–Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Power Gain

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%.

25 Vdc 25 Vdc 10 mAdc

350

2.8 –65 to +125 °C –65 to +150 °C

J309 J310

J308

1 DRAIN

J309 J310

3

2 SOURCE

mW

mW/°C

Symbol Min Typ Max Unit

V

(BR)GSS

I

GSS

V

GS(off)

I

DSS

V

GS(f)

Re(yis)

Re(yos) — 0.25 — mmhos

G

pg

–25 — — Vdc

— —

–1.0 –1.0 –2.0

12 12 24

— — 1.0 Vdc

— — —

— 16 — dB

Motorola Preferred Devices

1

2

3

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

— —

— — —

0.7

0.5

–1.0 –1.0

–6.5 –4.0 –6.5

60 30 60

— — —

nAdc µAdc

Vdc

mAdc

mmhos

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

J308 J309 J310

ELECTRICAL CHARACTERISTICS

Characteristic

(TA = 25°C unless otherwise noted) (Continued)

SMALL–SIGNAL CHARACTERISTICS (continued)

Common–Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common–Gate Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common–Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Common–Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

Common–Gate Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Common–Gate Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Gate–Drain Capacitance

(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)

Gate–Source Capacitance

(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)

Equivalent Short–Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

J309 J310

Symbol Min Typ Max Unit

Re(yfs) — 12 — mmhos

Re(yig) — 12 — mmhos

g

fs

g

os

g

fg

g

og

C

gd

C

gs

NF — 1.5 — dB

e

n

8000

10000

8000

— — 250 µmhos

— — —

— 1.8 2.5 pF

— 4.3 5.0 pF

— 10 —

— — —

13000 13000 12000

150 100 150

20000 20000 18000

— — —

µmhos

nVńHz

Ǹ

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

J308 J309 J310

50

310

F

W

T

Y

Ω

SOURCE

Figure 1. 450 MHz Common–Gate Amplifier Test Circuit

70 60

50

40

30

, DRAIN CURRENT (mA)I

20

D

10

–5.0 –4.0 –3.0 –2.0

VDS = 10 V

I

DSS

+25°C

ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)

I

– VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)

DSS

Figure 2. Drain Current and Transfer

Characteristics versus Gate–Source V oltage

U

C3

L1

C1

C5

1.0 k

+V

DD

C1 = C2 = 0.8 – 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539–002D. C5 = C6 = 5000 pF Erie (2443–000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #9230–30. L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).

70

+25°C

+150°C

60

50

40

30

20

10

0

TA = –55°C

+25°C

–55°C

–1.0 0

C7

, SATURATION DRAIN CURRENT (mA)

DSS

I

L2

P

C2

C6

RFC

35 30

VDS = 10 V f = 1.0 MHz

25

20

15

10

5.0

, FORWARD TRANSCONDUCTANCE (mmhos)Y

fs

0

5.0 4.0 3.0 2.0

Ω

LOAD

L2

S

C4

TA = –55°C

+25°C

+150°C

–55°C

+150°C

1.0 0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 3. Forward Transconductance

versus Gate–Source V oltage

+25°C

100 k

µ

Y

V

GS(off)

V

GS(off)

fs

= –2.3 V = = –5.7 V =

ANCE ( mhos)

10 k

RANSCONDUC

1.0 k

ARD OR

,

fs

100

0.01 0.10.2 0.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100

Figure 4. Common–Source Output

Admittance and Forward Transconductance

Y

os

ID, DRAIN CURRENT (mA)

versus Drain Current

1.0 k

Y

fs

µ

100

10

, OUTPUT ADMITTANCE ( mhos)Y

1.0

Motorola Small–Signal Transistors, FETs and Diodes Device Data

os

10

7.0

4.0

CAPACITANCE (pF)

1.0 0

5.0 4.0 3.0 2.0 1.0 06.07.08.09.010

VGS, GATE SOURCE VOLTAGE (VOLTS)

Figure 5. On Resistance and Junction

Capacitance versus Gate–Source V oltage

120

R

DS

96

72

C

gs

48

, ON RESISTANCE (OHMS)R

DS

C

gd

24

0

3