MOTOROLA 33981 Technical data

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
High-Frequency, High-Current, Self-Protected High-Side Switch
Document order number: MC33981
Rev 2.0, 10/2004
33981
(4.0 m up to 60 kHz)
The 33981 is a high-frequency, self-protected 4.0 mΩ R
switch used to replace electromechanical relays, fuses, and discrete devices in power management applications.
The 33981 can be controlled by pulse-width modulation (PWM) with a frequency up to 60 kHz. It is designed for harsh environments, and it includes self-recovery features. The 33981 is suitable for loads with high inrush current, as well as motors and all types of resistive and inductive loads.
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The 33981 is packaged in a 12 x 12 nonleaded power-enhanced Power QFN package with exposed tabs.
Features
• Single 4.0 mΩ R
• PWM Capability up to 60 kHz with Duty Cycle from 5% to 100%
• Very Low Standby Current
• Slew Rate Control with External Capacitor
• Overcurrent and Overtemperature Protection, Undervoltage Shutdown and Fault Reporting
• Reverse Battery Protection
• Gate Drive Signal for External Low-Side N-Channel MOSFET with Protection Features
• Output Current Monitoring
• Temperature Feedback
Maximum High-Side Switch
DS(ON)
33981 Simplified Application Diagram
DS(ON)
high-side
Device
PC33981PNA/R2
Simplified Application Diagram
HIGH-SIDE SWITCH
4.0 m
Bottom View
PNA SUFFIX
SCALE 1:1
CASE 1402-02
16-TERMINAL PQFN (12 X 12)
ORDERING INFORMATION
Temperature
Range (T
-40°C to 125°C
)
A
Package
16 PQFN
DD
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I/O I/O
I/O
MCU
I/O A/D A/D
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
© Motorola, Inc. 2004
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DD
SR
CONF FS
INLS EN INHS TEMP CSNS
33981
PWR
PWR
BOOT
OUT
DLS
GLS
GNDOCLS
M
TEMP
Temperature
Feedback
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Undervoltage
Detection
Bootstrap Supply
V
PWR
C
BOOT
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SR
FS
EN
INHS
INLS
CONF
5.0 V
I
CONF
R
DWN
Slew Rate Control
Logic
I
DWN
Cross-
Conduction
Figure 1. 33981 Simplified Internal Block Diagram
Current Protection
100 A
Overtemperature
Detection
GND
Gate Driver
OUT Current
Recopy
1/20000
5.0 V
CSNS
Low-Side
Gate Driver
and Protection
I
OCLS
OCLS
OUT
GLS
DLS
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33981 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 2
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Transparent Top View of Package
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CSNS TEMP
EN
INHS
FS
INLS CONF
OCLS
DLS GLS
SR
C
BOOT
TERMINAL DEFINITIONS
Functional descriptions of some of these terminals can be found in the System /Application Information section beginning on
page 19
.
Terminal
1 CSNS Output Current Monitoring This terminal is used to output a current proportional to the high-side OUT current and
2 TEMP Temperature Feedback This terminal reports an analog value proportional to the temperature of the GND flag
3
4 INHS Serial Input High Side The input terminal is used to directly control the OUT. This input has an active internal
5
6 INLS Serial Input Low Side The input terminal is used to directly control an external low-side N-channel MOSFET
Terminal
Name
EN
FS
Formal Name Definition
Enable
(Active High)
Fault Status (Active Low)
1 2 3
4 5
13
6
GND
7 8 9 10 11
12
is used externally to generate a ground-referenced voltage for the microcontroller (MCU) to monitor OUT current.
(terminal 13). It is used by the MCU to monitor board temperature.
This is an input used to place the device in a low current sleep mode. This terminal has an passive internal pulldown.
pulldown current source and requires CMOS logic levels.
This is an open drain-configured output requiring an external pull-up resistor to V
(5.0 V) for fault reporting. When a device fault condition is detected, this terminal
DD
is active LOW.
and has an active internal pulldown current source and requires CMOS logic levels. It can be controlled independently of the INHS depending of CONF terminal.
V
14
PWR
16
15
OUT
OUT
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7 CONF Configuration Input This input terminal is used to manage the cross-conduction between the internal high-
8 OCLS Low-Side Overload This terminal sets the V
9 DLS Drain Low Side This terminal is the drain of the external low-side N-channel MOSFET. Its monitoring
10 GLS Low-Side Gate This terminal is an output used to drive the gate of the external low-side N-channel
11 SR Slew Rate Control A capacitor connected between this terminal and the ground is used to control the
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33981
side N-channel MOSFET and the external low-side N-channel MOSFET. The terminal has an active internal pullup current source. When CONF is at 0 V, the two MOSFETs are controlled independently. When CONF is at 5.0 V, the two MOSFETs cannot be on at the same time.
protection level of the external low-side MOSFET. This
terminal has an active internal pullup current source. It must be connected to an external resistor.
allows for protection features.
MOSFET.
output slew rate.
DS
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TERMINAL DEFINITIONS (continued)
Functional descriptions of some of these terminals can be found in the System /Application Information section beginning on
page 19
.
Terminal
14 V
15, 16 OUT Output Protected high-side power output to the load. Output terminals must be connected in
Terminal
Name
PWR
Formal Name Definition
Positive Power Supply This terminal connects to the positive power supply and is the source input of
operational power for the device. The V of the package.
parallel for operation.
terminal is a backside surface mount tab
PWR
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33981 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 4
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MAXIMUM RATINGS All voltages are with respect to ground unless otherwise noted.
Rating Symbol Value Unit
ELECTRICAL RATINGS
Power Supply Voltage
Steady-State
V
PWR
V
-16 to 41
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Input/Output Terminals Voltage (Note 1) V
Output Voltage V
Continuous Output Current (Note 2) I
CSNS Input Clamp Current I
SR Voltage V
Temperature Feedback Voltage V
Voltage
C
BOOT
OCLS Voltage V
Low-Side Gate Voltage V
Low-Side Drain Voltage V
ESD Voltage
Human Body Model (Note 3)
Machine Model (Note 4)
Output Clamp Energy (Note 5) E
CSNS
C
BOOT
OCLS
V
ESD1
V
ESD2
IN
OUT
OUT
SR
TEMP
GLS
DLS
CL
-0.3 to 7.0 V
-5.0 to 41 V
40 A
10 mA
-0.3 to 54 V
-0.3 to 5.0 V
-0.3 to 54 V
-0.3 to 7.0 V
-0.3 to 15 V
-5.0 to 41 V
±2000
±200
TBD J
THERMAL RATINGS
Operating Temperature
Ambient
Junction
Storage Temperature T
Thermal Resistance (Note 6)
Junction to Power Die Case
Junction to Ambient
Peak Terminal Reflow Temperature During Solder Mounting (Note 7) T
Power Dissipation (TA = 25°C) (Note 8) P
Notes
1. Exceeding voltage limits on INHS, INLS, CONF, CSNS, device.
2. Continuous high-side output rating as long as maximum junction temperature is not exceeded. Calculation of maximum output current using package thermal resistance is required.
3. ESD1 testing is performed in accordance with the Human Body Model (C
4. ESD2 testing is performed in accordance with the Machine Model (C
specification with a capacitor > 0.01 µF connected from OUT to GND.
5. Active clamp energy using single-pulse method (L = 16 mH, R
6. Device mounted on a 2s2p test board per JEDEC JESD51-2.
7. Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device.
8. Maximum power dissipation at indicated ambient temperature in free air with no heatsink used.
FS, TEMP, and EN terminals may cause a malfunction or permanent damage to the
ZAP
= 0, V
PWR
L
T
A
T
J
STG
R
JC
θ
R
JA
θ
SOLDER
D
= 100 pF, R
ZAP
= 200 pF, R
= 12 V, TJ = 150°C).
= 0 Ω) and in accordance with the system module
ZAP
= 1500 Ω).
ZAP
-40 to 125
-40 to 150
-55 to 150
°C/W
1.0
20
240 °C
TBD W
°C
°C
V
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33981
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 4.5 V VDD≤ 5.5 V, 6.0 V V
27 V, -40°C TJ≤ 150°C unless otherwise noted.
PWR
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
POWER INPUT
Battery Supply Voltage Range
Fully Operational
Extended
V
PWR
6.0
4.5
27
27
V
Supply Current
V
PWR
Output ON, I
Supply Current
V
PWR
Output OFF, EN = 5.0 V, OUT Connected to GND
Sleep State Supply Current (V
T
= 25°C
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J
= 125°C
T
J
Undervoltage Shutdown V
Undervoltage Hysteresis V
OUT
= 0 A
< 14 V, EN = 0V)
PWR
POWER OUTPUT
Output Drain-to-Source ON Resistance (I
= 6.0 V
V
PWR
= 10.0 V
V
PWR
= 13 V
V
PWR
Output Drain-to-Source ON Resistance (I
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Output Drain-to-Source ON Resistance
V
V
V
V
PWR
PWR
PWR
PWR
= 6.0 V
= 9.0 V
= 13 V
= - 13 V
= 20 A, TJ = 25°C)
OUT
= 20 A, TJ = 150°C)
OUT
(I
= 20 A, TJ = 25°C)
OUT
I
PWR(ON)
I
PWR(SBY)
I
PWR(SLEEP)
PWR(UV)
PWR(UVHYS)
R
DS(ON)
R
DS(ON)
R
DS(ON)
mA
––10
mA
––10
µA
2.0 4.0 V
–0.3–V
––8.0
5.0
50
m
6.0
5.0
4.0
m
10.2
8.5
6.8
m
Output Overcurrent Detection Level I
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Current Sense Ratio
Fr
9.0 V <
V
< 16 V, CNS < 4.5V
PWR
Current Sense Ratio (C
Output Current
5.0 A
10 A
30 A
Current Sense Voltage Clamp
I
= 15 mA
CCNS
33981 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 6
) Accuracy
SR
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OCH
C
SR
C
SR_ACC
V
CL(CSNS)
100 A
1/20000
-20
-14
-12
4.5 6.0 7.0
20
14
12
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%
V
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V V
5.5V, 6.0V≤ V
DD
Typical values noted reflect the approximate parameter mean at T
Characteristic Symbol Min Typ Max Unit
A
27 V, -40°C TJ≤ 150°C unless otherwise noted.
PWR
= 25°C under nominal conditions unless otherwise noted.
POWER OUTPUT (continued)
Overtemperature Shutdown T
Overtemperature Shutdown Hysteresis (Note 9) T
Low-Side Gate
V
= 6.0 V
PWR
= 9.0 V
V
PWR
= 13 V
V
PWR
= 27 V
V
PWR
SD
SD(HYS)
V
GSLS
160 175 190 °C
5.0 20
6.0
9.0
12
12
°C
V
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Low-Side Gate Current
C = 4.7 nF
Low-Side Overload Detection Level versus Low-Side Drain Voltage
V
- V
OCLS
DLS
Temperature Feedback
= 25°C
T
J
Temperature Feedback Derating DT
I
GSLS
V
DS_LS
T
Feed
Feed
CONTROL INTERFACE
Input Logic High Voltage (Note 10) V
Input Logic Low Voltage (Note 10) V
Input Logic Voltage Hysteresis (Note 10) V
Input Logic Active Pulldown Current (INHS, INLS) I
Input Logic Pulldown Resistor (EN)
Input Active Pullup Current (OCLS)
Input Active Pullup Current (CONF) I
FS Tri-State Capacitance (Note 9)
FS Low-State Output Voltage
Notes
9. Parameter is guaranteed by process monitoring but is not production tested.
10. Upper and lower logic threshold voltage range applies to EN, CONF, INHS, and INLS input signals.
IH
IL
IN(HYS)
DWN
R
DWN
I
OCLS
CONF
C
SO
V
SOL
p
mA
–100–
mV
––50
V
TBD 4.75 TBD
–-12–mV/°C
0.7 V
0.2 V
100 350 750 mV
5.0 20 µA
100 200 400 k
–100–µA
–10–µA
20 pF
–0.20.4V
DD
DD
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33981
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 4.5 V ≤ VDD≤ 5.5 V, 6.0 V ≤ V Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
CONTROL INTERFACE AND POWER OUTPUT TIMING
C
Charge Blanking Time (Note 11)
BOOT
27 V, -40°C TJ≤ 150°C unless otherwise noted.
PWR
t
ON
20 µs
Output Rising Slew Rate (Note 12)
V
= 14 V
PWR
= 6.8 nF, from 10% to 90% of V
C
GATE
Output Falling Slew Rate (Note 12)
V
= 14 V
PWR
= 6.8 nF, from 90% to 10% of V
C
GATE
Output Turn-ON Delay Time (Note 13)
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Output Turn-OFF Delay Time
Input Switching Frequency (Note 14) f
, I
Notes
or
11. Refer to the paragraph entitled Sleep Mode
12. Parameter is guaranteed by process monitoring but is not production tested.
13. Turn-ON delay time measured from rising edge of INHS that turns the output ON to V
14. Turn-OFF delay time measured from falling edge of INHS that turns the output OFF to V
SR Capacitor = 4.7 nF
OUT,
SR Capacitor = 4.7 nF
OUT,
on page 19.
SR
SR
t
DLY(ON)
t
DLY(OFF)
PWM
emiconduct
R
F
200 ns
400 ns
60 kHz
= 0.5 V with RL= 5.0 Ω resistive load.
OUT
= V
OUT
PWR
25
25
-0.5 V with RL= 5.0 resistive load.
V/µs
V/µs
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33981 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 8
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