MOTOROLA 33879 Technical data

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Freescale Semiconductor, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Information

Configurable Octal Serial Switch with Open Load Detect Current Disable

The 33879 device is an 8-output hardware-configurable, high-side/low-side switch with 16-bit serial input control. Two of the outputs may be controlled directly via microprocessor for PWM applications. The 33879 incorporates SMARTMOS technology, with CMOS logic, bipolar/MOS analog circuitry, and DMOS power MOSFETs. The 33879 controls various inductive, incandescent, or LED loads by directly interfacing with a microcontroller. The circuit’s innovative monitoring and protection features include very low standby currents, cascade fault reporting, internal +45 V clamp voltage for low-side configuration, -20 V high-side configuration, output-specific diagnostics, and

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independent overtemperature protection.

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Features

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• Designed to Operate 5.5 V <

• 16-Bit SPI for Control and Fault Reporting, 3.3 V/ 5.0 V Compatible

• Outputs Are Current Limited (0.5 A to 1.0 A) to Drive Incandescent Lamps

• Output Voltage Clamp, +45 V (Low Side) and -20 V (High Side) During Inductive Switching

• On/Off Control of Open Load Detect Current (LED Application)

• Internal Reverse Battery Protection on V

• Loss of Ground or Supply Will Not Energize Loads or Damage IC

• Maximum 5.0 µA I

•R

• Short Circuit Detect and Current Limit with Automatic Retry

• Independent Overtemperature Protection

• Motorola Now Offers Pb-Free Packaging with the Suffix EK

of 1.0 Ω at 25°C Typical

DS(ON)

PWR

V

< 26.5 V

PWR

Standby Current at 13.0 V V

PWR

Document order number: MC33879

Rev 3.0, 06/2004

33879

CONFIGURABLE OCTAL SERIAL

SWITCH WITH OPEN LOAD

DETECT CURRENT DISABLE

EK (Pb-FREE) SUFFIX

DWB SUFFIX

CASE 1437-01

32-LEAD SOICW-EP

ORDERING INFORMATION

Device

PC33879DWB/R2

PC33879EK/R2

Temperature

Range (T

-40°C to 125°C

)

A

Package

32 SOICW-EP

Simplified Application Diagram

33879 Simplified Application Diagram

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MCU

MOSI

SCLK

MISO

PWM1

PWM2

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

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+5.0 V

VDDV

A0

CS

EN DI SCLK CS

DO

IN5

IN6

GND

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V

PWR

33879

V

BAT

D1 D2 D3 D4 S1 S2 S3 S4

D5 D6 D7 D8 S5 S6 S7 S8

High-Side Drive

H-Bridge Configuration

M

Low-Side Drive

V

BAT

V

BAT

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V

DD

__

CS

SCLK

DI

DO

EN

IN5

IN6

~50 µA

~110 kΩ

~50 µA

SPI and Interface

Logic

SPI Bit 0

Enable

SPI Bit 4

IN5

Internal

Bias

Power Supply

Charge

Pump

, POR, SLEEP

OV

Typical of all 8 output drivers

TLIM

Gate

Drive

Control

Current Limit

+ –

Open/Short Comparator

TLIM

Gate Drive

Control

Current Limit

+ –

Open/Short Comparator

~3.5 V Open/Short Threshold

Overvoltage

Shutdown/POR

Sleep State

–

+

–

+

~3.5 V Open/Short Threshold

Open Load Detect

Current

~80 µA

Open Load Detect Current

~80 µA

V

PWR

GND

D1 D2 D3 D4 D7 D8

S1 S2 S3

S4 S7 S8

D5

D6

S5

S6

Drain

Outputs

Source

Outputs

Drain

Outputs

Source

Outputs

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Figure 1. 33879 Simplified Internal Block Diagram

33879 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 2

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PIN FUNCTION DESCRIPTION

Pin Pin Name Formal Name Definition

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1GND

2V

3S8

4, 8, 9, 24,

25, 30

5D8

6S2

7D2

10 S1

11 D1

12 D6

13 S6

14 IN6

15 EN

16 SCLK

17 DI

18

NC

CS

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19 IN5

20 S5

21 D5

22 D3

23 S3

26 D4

27 S4

28 D7

29 S7

31 V

32 DO

PWR

DD

GND

V

DD

S8

NC

D8 S2

D2 NC NC

S1

D1

D6

S6

IN6

EN

SCLK

Ground Digital ground.

Logic Supply Voltage Logic supply for SPI interface. With VDD low the device will be in sleep mode.

Source Output 8 Output eight MOSFET source pins.

Not Connected No internal connection to this pin.

Drain Output 8 Output eight MOSFETdrain pin.

Source Output 2 Output two MOSFET source pin.

Drain Output 2 Output two MOSFET drain pin.

Source Output 1 Output one MOSFET source pin.

Drain Output 1 Output one MOSFET drain pin.

Drain Output 6 Output six MOSFET drain pin.

Source Output 6 Output six MOSFET source pin.

Command Input 6 PWM direct control input pin for output 6. IN6 is “OR” with SPI bit.

Enable Input IC Enable. Active high. With EN low, the device is in sleep mode.

SPI Clock SPI control clock input pin.

Serial Data Input SPI control data input pin from MCU to the 33879. Logic [1] activates output.

SPI Chip Select SPI control chip select input pin from MCU to the 33879. Logic [0] allows data to be

Command Input 5 PWM direct control input pin for output 5. IN5 is “OR” with SPI bit.

Source Output 5 Output five MOSFET source pin.

Drain Output 5 Output five MOSFET drain pin.

Drain Output 3 Output three MOSFET drain pin.

Source Output 3 Output three MOSFET source pin.

Drain Output 4 Output four MOSFET drain pin.

Source Output 4 Output four MOSFET source pin.

Drain Output 7 Output seven MOSFET drain pin.

Source Output 7 Output seven MOSFET source pin.

Battery Input Power supply pin to the 33879. V

Serial Data Output SPI control data output pin from the 33879 to the MCU. DO=0 no fault, DO=1 specific

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

transferred in.

output has fault.

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

DO V

PWR

NC S7 D7 S4 D4 NC NC S3 D3 D5 S5 IN5

CS

DI

has internal reverse battery protection.

PWR

MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33879

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MAXIMUM RATINGS

All voltages are with respect to ground unless otherwise noted.

Rating Symbol Value Unit

Supply Voltage (Note 1) V

V

DD

CS, DI, DO, SCLK, IN5, IN6, and EN (Note 1) – -0.3 to 7.0 V

V

Supply Voltage (Note 1) V

PWR

Output Clamp Energy (Note 2) E

ESD Voltage

Human Body Model (Note 3)

Machine Model (Note 4)

Storage Temperature T

DD

PWR

CLAMP

V

ESD1

V

ESD2

STG

-0.3 to 7.0 V

-16 to 40 V

50 mJ

±2000

±200

-55 to 150

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Operating Case Temperature T

C

-40 to 125

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Operating Junction Temperature T

or

Maximum Junction Temperature T

Power Dissipation (Note 5) P

Thermal Resistance

Junction-to-Ambient

Between the Die and the Exposed Die Pad

Notes

1. Exceeding these limits may cause malfunction or permanent damage to the device.

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2. Maximum output clamp energy capability at 150

3. ESD1 testing is performed in accordance with the Human Body Model (C

4. ESD2 testing is performed in accordance with the Machine Model (C

5. Maximum power dissipation at T

= 25°C with no heatsink used.

A

°C junction temperature using single non-repetitive pulse method with I = 350 mA.

ZAP

= 200 pF, R

ZAP

J

D

R

JA

θ

R

JC

θ

= 100 pF, R

ZAP

= 1500 Ω).

ZAP

= 0 Ω).

-40 to 150

1.7 W

71

1.2

DC

V

°C

°C/W

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33879 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 4

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STATIC ELECTRICAL CHARACTERISTICS

Characteristics noted under conditions of 3.1 V ≤ V Where applicable, typical values reflect the parameter’s approximate average value with V

Characteristic Symbol Min Typ Max Unit

POWER INPUT

Supply Voltage Range

Fully Operational

≤ 5.5 V, 5.5 V ≤ V

DD

V

PWR(fo)

≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.

PWR

5.5 – 26.5

= 13 V, TA = 25°C.

PWR

V

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Supply Current I

Sleep State Supply Current

V

or EN ≤ 0.8 V, V

DD

Sleep State Supply Current

EN ≤ 0.8 V, V

Overvoltage Shutdown Threshold Voltage V

V

PWR

V

Overvoltage Shutdown Hysteresis Voltage V

PWR

V

Undervoltage Shutdown Threshold Voltage V

PWR

Undervoltage Shutdown Hysteresis Voltage V

V

PWR

Logic Supply Voltage V

Logic Supply Current I

Logic Supply Sleep State Threshold Voltage V

Logic Supply Sleep State Hysteresis (Note 6) V

Notes

6. This parameter is guaranteed by design but is not production tested.

= 5.5 V

DD

PWR

= 13 V

PWR(OV-hys)

PWR(

PWR(on)

I

PWR(ss)

I

VDD(

ss)

PWR(

OV)

PWR(

UV)

UV-hys)

DD

DD(SS)

DD(SS-hys)

–1424mA

µA

–2.05.0

µA

–2.05.0

27 28.5 32 V

0.2 1.5 2.5 V

3.0 4.0 5.0 V

300 500 700 mV

3.1 – 5.5 V

250 400 700 µA

0.8 2.5 3.0 V

0.3 – 1.5 V

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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33879

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STATIC ELECTRICAL CHARACTERISTICS (continued)

Characteristics noted under conditions of 3.1 V ≤ V

≤ 5.5 V, 5.5 V ≤ V

DD

≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.

PWR

Where applicable, typical values reflect the parameter’s approximate average value with V

Characteristic Symbol Min Typ Max Unit

POWER OUTPUT

Drain-to-Source ON Resistance

I

= 0.350 A, TJ = 125°C, V

OUT

= 0.350 A, TJ = 25°C, V

I

OUT

= 0.350 A, TJ = -40°C, V

I

OUT

PWR

= 13 V

R

DS (ON)

–

= 13 V, TA = 25°C.

PWR

–

1.0

–

1.4

Ω

–

Output Self Limiting Current High-Side and Low-Side Configurations I

Output Fault Detection Voltage Threshold (Note 7)

Outputs Programmed OFF

Output Fault Detection Current @ Threshold, High-Side Configuration

Outputs Programmed OFF

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Output Fault Detection Current @ Threshold, Low-Side Configuration

Outputs Programmed OFF

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Output OFF Open Load Detection Current, High-Side Configuration

or

V

= 16 V, V

Drain

Output OFF Open Load Detection Current, Low-Side Configuration

= 16 V, V

V

Drain

Output Clamp Voltage Low-Side Drive

I

= 10 mA

D

Output Clamp Voltage High-Side Drive

= -10 mA

I

S

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Output Leakage Current High-Side and Low-Side Configurations

= 0 V, V

V

DD

Output Leakage Current Low-Side Configuration

= 5.0 V, V

V

DD

Open Load Detection Current Disabled

Output Leakage Current High-Side Configuration

V

= 5.0 V, V

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DD

Open Load Detection Current Disabled

Overtemperature Shutdown (Note 8) T

Overtemperature Shutdown Hysteresis (Note 8) T

Notes

7. Output fault detection thresholds with outputs programmed OFF. Output fault detect thresholds are the same for output open and shorts.

8. This parameter is guaranteed by design but is not production tested.

Drain

= 0 V, Outputs Programmed OFF

Source

= 0 V, Outputs Programmed OFF

Source

= 16 V, V

Drain

= 16 V, V

Drain

Source

= 0 V

= 0 V,

OUT(LIM)

V

OUT(flt-th)

I

OUT(flt-th)

I

OUT(flt-th)

I

OCO

I

OCO

V

OC(LSD)

V

OC(HSD)

I

OUT(LKG)

I

OUT(LKG)

I

OUT(LKG)

LIM

LIM(hys)

0.5 – 1.0 A

2.5 3.5 4.2

35 55 70

20 30 50

65 100 160

40 75 135

40 45 55

-15 -20 -25

––7.0

–– 5

––20

155 – 185

5.0 10 15

µA

°C

V

33879 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 6

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STATIC ELECTRICAL CHARACTERISTICS (continued)

Characteristics noted under conditions of 3.1 V ≤ V

≤ 5.5 V, 5.5 V ≤ V

DD

≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted.

PWR

Typical values, where applicable, reflect the parameter’s approximate average value with V

Characteristic Symbol Min Typ Max Unit

DIGITAL INTERFACE

Input Logic High-Voltage Thresholds (Note 9) V

Input Logic Low-Voltage Thresholds (Note 9) V

IN5, IN6, EN Input Logic Current

IN5, IN6, EN = 0 V

I

IN5, IIN6, IEN

IH

IL

0.7 x V

GND - 0.3 – 0.2 x V

-10 – 10

= 13 V, TA = 25°C

PWR

DD

–V

+ 0.3 V

DD

V

µA

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IN5, IN6 Pull-Down Current

0.8 V to 5.0 V

EN Pull-Down Current

EN = 5.0 V

SCLK, DI Input, Tri-State DO Output

0 V to 5.0 V

CS Input Current

CS = V

DD

CS Pull-Up Current

CS = 0 V

CS Leakage Current to V

CS = 5.0 V, V

DO High-State Output Voltage

I

DO-HIGH

DO Low-State Output Voltage

I

DO-LOW

Input Capacitance on SCLK, DI, Tri-State DO, IN5, IN6, EN (Note 10) C

Notes

9. Upper and lower logic threshold voltage levels apply to DI,

10. This parameter is guaranteed by design but not production tested.

DD

= -1.6 mA

= 1.6 mA

= 0 V

DD

CS, SCLK, IN5, IN6, and EN.

I

SCK, IDI, ITriDO

V

IN5, IIN6,

I

EN

I

CS

I

CS

I

CS(LKG)

DOHIGH

V

DOLOW

IN

30 45 100

-10 – 10

-30 – -100

––10

VDD - 0.4 – V

––0.4

– – 20 pF

DD

µA

V

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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA 33879

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