Mos-Tech MT3401 Schematic [ru]
茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD
.
P-Channel Enhancement Mode Field Effect Transistor
D S
FEATURES
● Super high dense cell design for low RDS(ON)
● Rugged and reliable
● Simple drive requirement
● SOT-23 package
NOTE：The MT3401 is available
in a lead-free package
S G
G
PRODUCT SUMMARY
VDSS ID
-30V -5.6A
RDS(ON) (mΩ) Typ
45@ VGS=-10V
65 @ VGS=-4.5V
D
MT3401
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter Sym bol Limit Unit
Drain-Source Voltage
Gate-Source Voltage VGS ±20 V
Drain Current-Continuousª@Tj=125℃
b
- Pulse
Drain-source Diode Forward Currentª IS -1.5 A
Maximum Power Dissipationª PD 1.5 W
Operating Junction and Storage
Temperature Range
d
V
DS -30 V
I
D -5.6 A
IDM -25 A
T
J,TSTG -55 to 150 °C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª Rth JA 90 ℃/W
©2009 Mos-Tech Semiconductor 1 http//www.mtsemi.com
茂钿半導體股份有限公司
ELECTRICAL CHARACTERISTICS (T
Mos-Tech Semiconductor Co.,LTD
Parameter Sym bol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage VGS(th) V DS=VGS,ID=-250µA -1.2 -2.0 V
Drain-Source On-State Resistance RDS(ON)
.
BV
I
I
A=25℃ unless otherwise noted)
DSS
DSS
GSS
GS=0V,ID=-250µA -30 V
V
V
DS=-30V,VGS=0V 1 µA
V
GS=±10V,VDS=0V ±100 nA
V
GS=-10V,ID=-4.6A 45 50
VGS=-4.5V,ID=-3.0A 65 70
MT3401
mΩ
Forward Transconductance
DAYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ɡ
FS
ISS
C
C
OSS
RSS
C
t
D(ON)
tr
t
D(OFF)
tf
Qg
Qgs
Qgd
GS=-10V,ID=-1.7A 17 S
V
1226 pF
V
DS=-15V,VGS=0V
f=1.0MH
Z
187 pF
91 pF
DD=-15V
V
D=-1.0A,
I
GEN=-10V
V
L=15ohm
R
GEN=6ohm
R
5.9 ns
6.9 ns
48 ns
16 ns
9.8 nC
V
DS=-15V,ID=-1.7A
GS=-10V
V
1.8 nC
4.5 nC
©2009 Mos-Tech Semiconductor 2 http//www.mtsemi.com
茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD
.
MT3401
ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)
Parameter Sym bol Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD VGS=0V,IS=-1.25A -0.8 -1.2 V
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2%
c. Guaranteed by design, not subject to production testing.
-ID,Drain Current(A)
-ID, Drain Current (A)
- VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V)
Figure 1.Output Characteristics Figure 2.Transfer Characteristics
VGS=-10V
ID=-1.7A
C,Capacitance(pF)
RDS(ON), On-Resistance(mΩ)
- VGS, Drain-to Source Voltage
Figure3.Capacitance Figure4. On-Resistance Variation with
Temperature
©2009 Mos-Tech Semiconductor 3 http//www.mtsemi.com
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