Mos-Tech MT2301 Schematic [ru]

MOS-TECH Semiconductor Co.,LTD

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MT2301

Single P-Channel Power MOSFET

MT2301

General Description

This P-Channel Power MOSFET is pro duced
using MOS-TECH Semiconductor’s advanced
PowerTrench process that has b een especially tailored
to minimize the on-state r esistance and yet maintain
low gate charge for superior switching performance.

These devices a re well suit ed for portable electronics
applications: load s witching and power management,
battery charging circuits and DC/DC conversion.

D

Features

• –3.3 A, –20 V. R

R

• Low gate charge (3.6 nC typical)

• High performance trench technology for extremely

low R

• SuperSOT

higher power handling capability than SOT23 in

the same footprint

DS(ON)

TM

-23 provides low R

= 0.072 Ω @ VGS = –4.5 V

DS(ON)

= 0.096Ω @ VGS = –2.5 V

DS(ON)

DS(ON)

D

and 30%

S

G

SOT -23

TM

Absolute Maximum Ratings T

G

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5 PD

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

±12

3.3

–

0.46

S

V

A

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 250

(Note 1) 75

°C/W

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

010X MT2301 7’’ 8mm 3000 units

©2010 MOS-TECH Semiconductor Corporation www.mtsemi.com Rev.D

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V

Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25 oC

VDS = -16 V, V

GS

= 0 V

-1 µA

TJ = 55°C

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate - Body Leakage, Reverse

VGS = -8 V, V

DS

= 0 V

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.8 -1.5 V

Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

ID = -250 µA, Referenced to 25 oC

VGS = -4.5 V, ID = -1.3 A

TJ =125°C 0.12 0.15

VGS = -2.5 V, I D = -1.1 A

I

g

D(ON)

FS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -3.3 A

Forward Transconductance

VDS = -4.5 V, ID = -2 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V,

Output Capacitance 80 pF

f = 1.0 MHz

Reverse Transfer Capacitance 35 pF

SWITCHING CHARACTERISTICS (Note 2)

t

t

t

t

Q

Q

Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time

Turn - On Rise Time 12 22 ns

VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, R

GEN

= 6 Ω

Turn - Off Delay Time 16 26 ns

Turn - Off Fall Time 5 12 ns

Total Gate Charge

Gate-Source Charge 0.8 nC

VDS = -10 V, ID = - 2 A,
VGS = -4.5 V

Gate-Drain Charge 0.7 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Note:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. R

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current -0.42 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A

is determined by the user's board design.

CA

θ

(Note) -0.7 -1.2 V

-16

mV /o C

-10 µA

-100 nA

3

mV /oC

0.072 0.08

0.096 0.15

4 S

330 pF

7 15 ns

3.6 5 nC

is guaranteed by

JC

θ

Ω

o

a. 250

C/W when mounted on

a 0.02 in2 pad of 2oz Cu.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

o

b. 270

C/W when mounted on

2

a 0.001 in

pad of 2oz Cu.

Rev.D

Typical Electrical Characteristics

10

V = -4.5V

GS

8

-3.5V

-3.0V

6

-2.5V

4

2

D

- I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.0V

Figure 1. On-Region Characteristics.

1.6

I = -1.3A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

2

1.8

V = -2.5 V

GS

1.6

1.4

1.2

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 2 4 6 8 10

-3.0V

-3.5V

- I , DRAIN CURRENT (A)

D

-4.0V

Figure 2. On-Resistance Variation with

Drain Current and Gate

0.5

0.4

0.3

0.2

0.1

DS(ON)

R , ON-RESISTANCE (OHM)

0

0 2 4 6 8 10

- V , GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

A

25°C

I = -0.6A

D

-4.5V

Figure 3. On-Resistance Variation

with Temperature.

4

V = -5V

DS

3

2

D

1

- I , DRAIN CURRENT (A)

0

0.5 1 1.5 2 2.5

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

V = 0V

GS

T = 125°C

1

J

25°C

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001

0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage
Variation with Source

Current

and Temperature.

Rev.D