Mosel Vitelic V826516G04SXTG-B1, V826516G04SXTG-B0, V826516G04SXTG-A1 Datasheet
MOSEL VITELIC
1
V826516G04S
128 MB 200-PIN DDR UNBUFFERED SODIMM
2.5 VOLT 16M x 64
PRELIMINARY
V826516G04S Rev. 1.5 March 2002
Features
■ JEDEC 200 Pin DDR Unbuffered Small-Outline,
Dual In-Line memory module (SODIMM);
16,777,216 x 64 bit organization.
■ Utilizes High Performance 16M x 8 DDR
SDRAM in TSOPII-66 Packages
■ Single +2.5V (± 0.2V) Power Supply
■ Programmable CAS
Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
■ Auto Refresh (CBR) and Self Refresh
■ All Inputs, Outputs are SSTL-2 Compatible
■ 4096 Refresh Cycles every 64 ms
■ Serial Presence Detect (SPD)
■ DDR SDRAM Performance
Description
The V826516G04S memory module is organized
16,777,216 x 64 bits in a 200 pin memory module.
The 16M x 64 memory module uses 8 Mosel-Vitelic
16M x 8 DDR SDRAM. Th e x64 modu les are ideal
for use in high performance computer systems
where increased memory den sity and fast access
times are required.
Component Used -7 -75 -8 Units
tCKClock Frequency
(max.)
143
(PC266A)
133
(PC266B)
125
(PC200)
MHz
t
AC
Cloc k Access T im e
CAS
Latenc y = 2.5
77.58ns
Module Speed
A1 PC1600 (100MHz @ CL2)
B0 PC2100 B (133MHz @ CL2.5)
B1 PC2100 A (133MHz @ CL2)
2
MOSEL VITELIC
V826516G04S
V826516G04S Rev. 1.5 March 2002
Part Number Information
V 8 2 65 16 G 0 4 S X T G - XX
DDRSDRAM
2.5V
WIDTH
DEPTH
200 PIN Unbuffered
SODIMM X8 COMPONENT
REFRESH
RATE 4K
4 BANKS
STTL
COMPONENT
REV LEVEL
COMPONENT
PACK AG E , T = TSOP
LEAD FINISH
G = GOLD
SPEED
A1 (100MHZ@CL2)
MOSEL VITELIC
MANUFACTURED
B0 (133MHZ@CL2.5)
B1 (133MHZ@CL2)
MOSEL VITELIC
V826516G04S
3
V826516G04S Rev. 1.5 March 2002
Block Diagram
CS0
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS
S
A0 - A13
A0-A13: DDR SDRAMs D0 - D7
BA0 - BA1
BA0-BA1: DDR SDRAMs D0 - D7
RAS
RAS: SDRAMs D0 - D7
CAS
CAS: SDRAMs D0 - D7
CKE0
CKE: SDRAMs D0 - D7
WE WE: SDRAMs D0 - D7
Notes:
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DM/CKE/
CS relationships must
be maintained as shown.
3. DQ, DQS, DM/DQS resistors: 22 Ohms.
4. VDDID strap connections
(for memory device VDD, VDDQ):
STRAP OUT (OPEN): VDD = VDDQ
STRAP IN (VSS): VDD ≠ VDDQ.
A0
Serial PD
A1
A2
SA0 SA1
SA2
SCL
SDA
WP
V
SS
D0 - D7
D0 - D7
V
DD/VDDQ
D0 - D7
D0 - D7
VREF
V
DDID
Strap: see Note 4
V
DDSPD
SPD
Clock Wiring
Clock
Input
SDRAMs
CK0/
CK0
CK1/
CK1
CK2/CK2
4 SDRAMs
4 SDRAMs
NC
DM
DQS0
DM0
*Clock Net Wiring
Card
Edge
Dram1
Dram2
R=120
Ω
±
5%
Dram3
Dram4
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D4
DQS
S
DM
DQS4
DM4
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS
S
DM
DQS1
DM1
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D5
DQS
S
DM
DQS5
DM5
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS
S
DM
DQS2
DM2
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D6
DQS
S
DM
DQS6
DM6
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS
S
DM
DQS3
DM3
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
D7
DQS
S
DM
DQS7
DM7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
4
MOSEL VITELIC
V826516G04S
V826516G04S Rev. 1.5 March 2002
Pin Configurations (Front Side/Back Side)
Notes:
* These pins ar e not used in this module.
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
VREF
VSS
DQ0
DQ1
VDD
DQS0
DQ2
VSS
DQ3
DQ8
VDD
DQ9
DQS1
VSS
DQ10
DQ11
VDD
CK0
CK0
VSS
DQ16
DQ17
VDD
DQS2
DQ18
VSS
DQ19
DQ24
VDD
DQ25
DQS3
VSS
DQ26
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
DQ27
VDD
CB0
CB1
VSS
DQS8
CB2
VDD
CB3
DU
VSS
CK2
CK2
VDD
CKE1
DU(A13)
A12
A9
VSS
A7
A5
A3
A1
VDD
A10/AP
BA0
WE
S0
DU
VSS
DQ32
DQ33
VDD
DQS4
135
137
139
141
143
145
147
149
151
153
155
157
159
161
163
165
167
169
171
173
175
177
179
181
183
185
187
189
191
193
195
197
199
DQ34
VSS
DQ35
DQ40
VDD
DQ41
DQS5
VSS
DQ42
DQ43
VDD
VDD
VSS
VSS
DQ48
DQ49
VDD
DQS6
DQ50
VSS
DQ51
DQ56
VDD
DQ57
DQS7
DQ58
DQ58
DQ59
VDD
SDA
SCL
VDDSPD
VDDID
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
VREF
VSS
DQ4
DQ5
VDD
DM0
DQ6
VSS
DQ7
DQ12
VDD
DQ13
DM1
VSS
DQ14
DQ15
VDD
VDD
VSS
VSS
DQ20
DQ21
VDD
DM2
DQ22
VSS
DQ23
DQ28
VDD
DQ29
DM3
VSS
DQ30
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
DQ31
VDD
CB4
CB5
VSS
DM8
CB6
VDD
CB7
DU/(RESET)
VSS
VSS
VDD
VDD
CKE0
DU(BA2)
A11
A8
VSS
A6
A4
A2
A0
VDD
BA1
RAS
CAS
S1
DU
VSS
DQ36
DQ37
VDD
DM4
136
138
140
142
144
146
148
150
152
154
156
158
160
162
164
166
168
170
172
174
176
178
180
182
184
186
188
190
192
194
196
198
200
DQ38
VSS
DQ39
DQ44
VDD
DQ45
DM5
VSS
DQ46
DQ47
VDD
CK1
CK1
VSS
DQ52
DQ53
VDD
DM6
DQ54
VSS
DQ55
DQ60
VDD
DQ61
DM7
VSS
DQ62
DQ63
VDD
SA0
SA1
SA2
DU
Pin Names
Pin Pin Description
A0~A11 Address Input (Multiplexed)
BA0~BA1 Bank Select Address
DQ0~DQ63 Data Input/Output
DQS0~D Q S7 Data S trobe Input/Output
CK0~CK2, CK0
~CK2, Clock Input
CKE0 Clock Enable Input
CS0
Chip Select Input
RAS Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
DM0~DM7 Data - In Mask
VDD Power Supply (2.5V)
VDDQ Power Supply for DQS(2.5V)
VSS Ground
VREF Power Supply for Reference
VDDSPD Serial EEPOM Power Supply (2.3V
to 3.6V)
SDA Serial Data I/O
SCL Serial Clock
SA0~2 Address in EEPROM
VDDID VDD Identification Flag
NC No Connection
Pin Pin Description
Key
Key
MOSEL VITELIC
V826516G04S
5
V826516G04S Rev. 1.5 March 2002
Serial Pr esence Detect Info rm ation
Bin Sort:
A1 (PC1600 @ CL2)
B0 (PC2100B @ CL2.5)
B1 (PC2100A @ CL2)
Byte # Functi on described
Function Supported Hex value
A1 B0 B1 A1 B0 B1
0 Defines # of Bytes written into serial memory at module manufacturer 128bytes 80h
1 Total # of Bytes of SPD memory device 256bytes 08h
2 Fundamental memory type SDRAM DDR 07h
3 # of row address on this as sembly 12 0Ch
4 # of column address on this assembly 10 0Ah
5 # of module Rows on this assembly 1 Bank 01h
6 Data width o f this assembly 64 bits 40h
7 .........Data width of this assembly - 00h
8 VDDQ and in terface standard of thi s as s em bly SSTL 2.5 V 04h
9 DDR SDRAM cycle time at CAS Latency =2.5 8ns 7.5ns 7ns 80h 75h 70h
10 DDR SDRAM Access time from clock at CL=2.5 ±0.8ns ±0.75ns ±0.70ns 80h 75h 70h
11 DIMM configuration type(Non-parity, Parity, ECC) Non-parity, ECC 00
12 Refresh rate & type 15.6us & Self refresh 80h
13 Primary DDR SDRAM width x8 08h
14 Error checking DDR SDRAM data width x0 00h
15 Minimum clock delay for back-to-back random column
address
t
CCD
=1CLK 01h
16 DDR SDRAM device attributes : Burst lengths supported 2,4,8 0Eh
17 DDR SDRAM device attributes : # of banks on each DDR SDRAM 4 banks 04h
18 DDR SDRAM device attributes : CAS Latency supported 2,2.5 0Ch
19 DDR SDRAM device attributes : CS Latency 0CLK 01h
20 DDR SDRAM device attributes : WE Latency 1CLK 02h
21 DDR SDRAM module attributes Unbuffered
Diff Clock
20h
22 DDR SDRAM device attributes : General +/-0.2V voltage tolerance 00h
23 DDR SDRAM cycle time at CL =2 10ns 10ns 7.5ns A0h A0h 75h
24 DDR SDRAM Access time from clock at CL =2 ±0.8ns ±0.80ns ±0.75ns 80h 80h 75h
25 DDR SDRAM cycle time at CL =1.5 - - - 00h
26 DDR SDRAM Access time from clock at CL =1.5 - - - 00h
27 Minimum row precharge time (=t
RP
) 20ns 20ns 18ns 50h 50h 48h
28 Minimu m row ac tiv a te to row ac tiv e dela y (=t
RRD
) 15ns 15ns 14ns 3Ch 3Ch 38h
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