1
2
3
4
5
6
7
8
9
16
15
14
13
12
11
10
A
8
A9
A11
A13
WE
CE2
A15
Vcc
A17
A
16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
17
18
19
20
21
22
23
CE1
A
10
OE
I/O
8
I/O7
I/O6
I/O5
I/O4
GND
I/O
3
I/O2
I/O1
A0
A1
A2
A3
Cell Array
ROW DECODER
SENSE AMP
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
I/O8
I/O1
OE
WE
CE1
CE2
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A9
A10A11A12A13A14A15A16A
17
V62C3802048L(L)
Ultra Low Power
256K x 8 CMOS SRAM
Features
• Low-power consumption
- Active: 40mA at 35ns
- Stand-by: 10
µA
(CMOS input/output)
2 µA CMOS input/output, L version
• Single + 2.7 to 3.3V Power Supply
• Equal access and cycle time
• 35/45/55/70/85/100 ns access time
• Easy memory expansion with CE1
, CE2
and OE
inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
• Package available: 32-TSOP1 / STSOP
• 48 Ball CSP_BGA
Functional Description
The V62C3802048L is a low power CMOS Static RAM organized as 262,144 words by 8 bits. Easy memory expansion is provided by an active LOW CE1
, an active HIGH CE2, an acti-
ve LOW OE
, and Tri-state I/O’s. This device has an autom-
atic power-down mode feature when deselected.
Writing to the device is accomplished by taking Chip En-
able 1 (CE1
) with Write Enable (WE ) LOW, and Chip Enable 2 (CE2) HIGH. Reading from the device is performed by
taking Chip Enable 1 (CE1
) with Output Enable (OE)
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)
is HIGH. The I/O pins are placed in a high-impedance state when the device is deselected: the outputs are disabled during a write cycle.
The V62C3802048LL comes with a 1V data retention feature
and Lower Standby Power. The V62C3802048L is available in
a 32-pin 8 x 20 mm TSOP1/8 x 13.4mm STSOP and CSP type
48-fpBGA packages.
32-Pin TSOP1 / STSOP(CSP_BGA see next page)
Logic Block Diagram
REV. 1.2 May 2001 V62C3802048L(L)
1