1
2
3
4
5
6
7
8
9
16
15
14
13
12
11
10
A
8
A
9
A
11
A
13
WE
CE
2
A
15
Vcc
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
32
31
30
29
28
27
26
25
24
17
18
19
20
21
22
23
CE1
A
10
OE
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
GND
I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
A
3
1024
X
1024
ROW DECODER
SENSE AMP
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
I/O
7
I/O
0
OE
WE
CE1
CE2
A9A10A11A12A13A14A15A
16
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
V62C2801024L(L)
Ultra Low Power
128K x 8 CMOS SRAM
Features
• Ultra Low-power consumption
- Active: 25mA at 70ns
- Stand-by: 5
µA (CMOS input/output)
1 µA CMOS input/output, L version
• Single +2.2V to 2.7V Power Supply
• Equal access and cycle time
• 70/85/100/150 ns access time
• Easy memory expansion with CE1
, CE2
and OE
inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
Functional Description
TheV62C2801024L is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is
provided by an active LOW CE1
, an active HIGH CE2, an
active LOW OE
, and Tri-state I/O’s. This device has an a-
utomatic power-down mode feature when deselected.
Writing to the device is accomplished by taking Chip E-
nable 1 (CE1
) with Write Enable (WE
) LOW, and Chip Enable 2 (CE2) HIGH. Reading from the device is performed
by taking Chip Enable 1 (CE1
) with Output Enable
(OE
) LOW while Write Enable (WE
) and Chip Enable 2
(CE2) is HIGH. The I/O pins are placed in a high-impedance state when the device is deselected: the outputs are disabled during a write cycle.
TheV62C2801024LL comes with a 1V data retention feature
and Lower Standby Power. The V62C2801024L is available in
a 32pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.
32-Pin TSOP1 / STSOP / 48-fpBGA (See nest page)
Logic Block Diagram
1024
X
1024
ROW DECODER
SENSE AMP
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
I/O8
I/O1
OE
WE
CE1
CE2
A10A11A12A13A14A15A
16
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
9
REV. 1.1 April 2001 V62C2801024L(L)
1