Mosel Vitelic V62C2801024LL-85V, V62C2801024LL-85T, V62C2801024LL-85B, V62C2801024LL-70V, V62C2801024LL-70T Datasheet

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1 2 3 4 5 6 7 8 9
16
15
14
13
12
11
10
A
8
A
9
A
11
A
13
WE
CE
2
A
15
Vcc
A
16
A
14
A
12
A
7
A
6
A
5
A
4
32 31 30 29 28 27 26 25 24
17
18
19
20
21
22
23
CE1
A
10
OE
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
GND I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
A
3
1024
X
1024
ROW DECODER
SENSE AMP
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
I/O
7
I/O
0
OE WE CE1 CE2
A9A10A11A12A13A14A15A
16
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
V62C2801024L(L)
Ultra Low Power
128K x 8 CMOS SRAM
Features
• Ultra Low-power consumption
- Active: 25mA at 70ns
- Stand-by: 5
µA (CMOS input/output)
1 µA CMOS input/output, L version
• Single +2.2V to 2.7V Power Supply
• Equal access and cycle time
• 70/85/100/150 ns access time
• Easy memory expansion with CE1
, CE2
and OE
inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
Functional Description
TheV62C2801024L is a low power CMOS Static RAM org­anized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1
, an active HIGH CE2, an
active LOW OE
, and Tri-state I/O’s. This device has an a-
utomatic power-down mode feature when deselected. Writing to the device is accomplished by taking Chip E-
nable 1 (CE1
) with Write Enable (WE
) LOW, and Chip En­able 2 (CE2) HIGH. Reading from the device is performed by taking Chip Enable 1 (CE1
) with Output Enable
(OE
) LOW while Write Enable (WE
) and Chip Enable 2 (CE2) is HIGH. The I/O pins are placed in a high-imped­ance state when the device is deselected: the outputs are d­isabled during a write cycle.
TheV62C2801024LL comes with a 1V data retention feature and Lower Standby Power. The V62C2801024L is available in a 32pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.
32-Pin TSOP1 / STSOP / 48-fpBGA (See nest page)
Logic Block Diagram
1024
X
1024
ROW DECODER
SENSE AMP
INPUT BUFFER
COLUMN DECODER
CONTROL
CIRCUIT
I/O8
I/O1
OE WE CE1 CE2
A10A11A12A13A14A15A
16
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
9
REV. 1.1 April 2001 V62C2801024L(L)
1
V62C2801024L(L)
2
Top View
48-CSP Ball-Grid Array package (shading indicates no ball)
1 2 3 4 5 6
A
A0A1CE2
A3A6A
8
B
I/O4A2WE
A4A7I/O
0
C
I/O5NCNCA5NC
I/O
1
D
VSSNCNCNCNCV
DD
E
VDDNCNCNCNCV
SS
F
I/O6NCNCNCNCI/O
2
G
I/O7OE
CE1A16A15I/O
3
H
A9A10A11A12A13A
14
MOSEL VITELIC V62C2801024L(L)B
TOP VIEW
6 5 4 3 2 1
A B C D E F G H
REV. 1.1 April 2001 V62C2801024L(L)
V62C2801024L(L)
Absolute Maximum Ratings *
* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat­ing only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specifica­tion is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect reliability.
Parameter Symbol Minimum Maximum Unit
Voltage on Any Pin Relative to Gnd Vt -0.5 4.6 V Power Dissipation P
T
1.0 W
Storage Temperature (Plastic) Tstg -55 +150
0
C
Temperature Under Bias Tbias -40 +85
0
C
Truth Table
* Key: X = Don’t Care, L = Low, H = High
CE1 CE2 WE OE Data Mode
H X X X High-Z Standby X L X X High-Z Standby
L H H L Data Out Active, Read L H H H High-Z Active, Output Disable L H L X Data In Active, Write
3
Recommended Operating Conditions (T
A
= 00C to +700C / -400C to 850C**)
* VIL min = -1.0V for pulse width less than tRC/2. ** For Industrial Temperature.
Parameter Symbol Min Typ Max Unit
V
CC
2.2 2.5 2.7 V
Gnd 0.0 0.0 0.0 V
V
IH
2.0 - VCC + 0.2 V
V
IL
-0.5* - 0.6 V
Supply Voltage
Input Voltage
REV. 1.1 April 2001 V62C2801024L(L)
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