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MOSEL VITELIC
V61C518256
32K X 8 HIGH SPEED
STATIC RAM
Features
High-speed: 10, 12, 15 ns
Low Power Dissipation:
– CMOS Standby: 0.5 mA (Max.)
Fully static operation
All inputs and outputs directly compatible
Three state outputs
Ultra low data retention current (V
Single 5V
Packages
– 28-pin TSOP (Standard)
– 28-pin 300 mil SOJ
±
10% Power Supply
A
0
A
1
A
6
A
10
A
13
A
14
Description
The V61C518256 is a 262,144-bit static random
access memory organized as 32,768 words by 8
bits. It is built with MOSEL VITELIC’s high
performance CMOS process. Inputs and threestate outputs are TTL compatible and allow for
direct interfacing with common system bus
CC
= 2V)
structures.
Functional Block Diagram
Row
Decoder
512 x 512
Memory Array
PRELIMINARY
V
CC
GND
Device Usage Chart
Operating
Temperature
Range
°
C to 70
°
0
C •••••• Blank
I/O
I/O
CE
OE
WE
0
Input
Data
Circuit
7
Control
Circuit
Package Outline Access Time (ns)
Column I/O
Column Decoder
A
2
A
5
12
11
518256-01
Temperature
MarkT N R101215
A
A
V61C518256 Rev. 0.3 July 1998
1
MOSEL VITELIC
Pin Descriptions
A
–A
0
These 15 address inputs select one of the 32,768 x
8 bit segments in the RAM.
CE Chip Enable Inputs
CE is an active LOW input. Chip Enable must be
LOW when reading from or writing to the device.
When HIGH, the device is in standby mode with I/O
pins in the high impedance state.
OE Output Enable Input
The Output Enable input is active LOW. When OE
is LOW with CE LOW and WE HIGH, data of the
selected memory location will be available on the
I/O pins. When OE is HIGH, the I/O pins will be in
the high impedance state.
Pin Configurations (Top View)
Address Inputs
14
V61C518256
WE Write Enable Input
An active LOW input, WE input controls read and
write operations. When CE and WE inputs are both
LOW, the data present on the I/O pins will be
written into the selected memory location.
I/O
–I/O
0
These 8 bidirectional ports are used to read data
from and write data into the RAM.
V
CC
GND Ground
Data Input and Data Output Ports
7
Power Supply
A
A
A
A
A
A
A
A
A
A
I/O
I/O
I/O
GND
28-Pin SOJ 28-Pin TSOP (Standard)
OE
22
A9
A8
A7
A6
A5
A4
A3
23
24
25
26
27
28
1
2
3
4
5
6
7
1
14
2
12
3
7
4
6
5
5
6
4
7
3
8
2
9
1
10
0
11
0
12
1
13
2
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
518256-01
V
CC
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
I/O
I/O
I/O
I/O
7
6
5
4
3
A11
A13
WE
VCC
A14
A12
21
20
19
18
17
16
15
14
13
12
11
10
518256-03
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
9
A2
8
V61C518256 Rev. 0.3 July 1998
2
MOSEL VITELIC
V61C518256
Part Number Information
61 C 851 256 –
V
MOSEL-VITELIC
MANUFACTURED
61 = STANDARD
C = CMOS PROCESS
Absolute Maximum Ratings
SRAM
FAMILY
51 = 5V
(1)
OPERATING
VOLTAGE
ORGANIZATION
8 = 8-bit
DENSITY
256K
PWR.
BLANK = STANDARD
10 ns
12 ns
15 ns
Symbol Parameter Commercial Units
TEMP.
PKGSPEED
BLANK = 0¡C to 70¡C
T = TSOP STANDARD
R = 300-mil SOJ
518256-05
V
CC
V
N
V
DQ
T
BIAS
T
STG
NOTE:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance*
T
= 25
A
Symbol Parameter Conditions Max. Unit
C
IN
C
OUT
NOTE:
* This parameter is guaranteed by design and not tested.
Supply Voltage -0.5 to +7 V
Input Voltage -0.5 to +7 V
Input/Output Voltage Applied V
Temperature Under Bias -55 to +85
Storage Temperature -55 to +125
+ 0.5 V
CC
Truth Table
°
C, f = 1.0MHz
Input Capacitance V
Output Capacitance V
= 0V 6 pF
IN
= 0V 8 pF
I/O
Mode CE
Standby H X X High Z
Read L L H D
Read L H H High Z
Write L X L D
NOTE:
X = Don’t Care, L = LOW, H = HIGH
OE WE
°
C
°
C
I/O
Operation
OUT
IN
V61C518256 Rev. 0.3 July 1998
3
MOSEL VITELIC
DC Electrical Characteristics
(over all temperature ranges, V
CC
= 5V
±
10%)
V61C518256
Symbol Parameter Test Conditions Min. Typ. Max. Units
= Max.
CC
MAX
(1,2)
(1)
(3)
IN
³
£
0.2V, V
= Max, V
CC
= Max, CE
CC
= Min, I
CC
= Min, I
CC
£
V
IL
– 0.2V,
V
CC
CC
-0.5 — 0.8 V
2.2 — 6 V
= 0V to V
IN
= V
= 8mA — — 0.4 V
OL
= -4mA 2.4 — — V
OH
CC
, V
IH
= 0V to V
OUT
CC
Output Open,
-5 — 5
-5 — 5
(4)
110 130 mA
25 40 mA
12mA
= Max.
Ind. Units
V
V
IH
I
IL
I
OL
V
OL
V
OH
Input LOW Voltage
IL
Input HIGH Voltage
Input Leakage Current V
Output Leakage Current V
Output LOW Voltage V
Output HIGH Voltage V
Symbol Parameter Com.
I
CC1
I
SB
I
SB1
NOTES:
1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
2. V
IL
3. f
MAX
4. Maximum values.
Average Operating Current, CE
V
= Max., f = f
CC
TTL Standby Current
CE
, V
³
V
IH
CMOS Standby Current, CE
V
– 0.2V or V
³
V
IN
CC
(Min.) = -3.0V for pulse width < 20ns.
= 1/t
.
RC
m
A
m
A
V61C518256 Rev. 0.3 July 1998
4