MOSEL VITELIC
V58C3643204SAT
HIGH PERFORMANCE
3.3 VOLT 2M X 32 DDR SDRAM
4 X 512K X 32
45 50 55 60
PRELIMINARY
System Frequency (f
Clock Cycle Time (t
Clock Cycle Time (t
) 225MHz 200 MHz 183 MHz 166 MHz
CK
) 5 ns 5.5 ns 6 ns
CK3
)4.5ns
CK4
Features
■ 4 banks x 512K x 32 organization
■ High speed data transfer rates wi th system
frequency up to 225 MHz
■ Data Mask for Write Control (DM)
■ Four Banks controlled by BA0 & BA 1
■ Programmable C AS
■ Programmable Wra p Sequence: Sequential
or Interleave
■ Programmable Burst Length:
2, 4, 8 full page for Sequential Type
2, 4, 8 full page for Interleave Type
■ Automatic and Control led Precharge Command
■ Suspend Mode and Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 2048 cycles/16ms
■ Available in 100-pin TQFP
■ SSTL-2 Compatible I/Os
■ Double Data Rate (DDR)
■ Bidirectional Data Strobe (DQs ) for input and
output data, active on both edges
■ On-ChipDLL aligns DQ andDQs transitions with
CLK transitions
■ Differential clock inputs CLK and CLK
■ Power Supply 3.3V ± 0.3V
Latency: 3, 4
Description
The V58C3643204SAT is a four bank DDR
DRAM organized as 4 banks x 512K x 32. The
V58C3643204SAT achieves high speed data
transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the
output data to a system clock
All of the control, address, circuits are synchronized with t he positive edge of an externally supplied clock. I/O transactions are possible on both
edges of DQS.
Operating the four memory bank s in an interleaved fashion al lows random access operation to
occur at a higher rate than is possible with standard
DRAMs. A sequential and gapless data rate is possible depending on burs t length, CAS
speed grade of t he device.
latency and
Device Usage Chart
Operating
Temperature
Range
0°Cto70°C • •••• • • Blank
V58C3643204SAT Rev.1.4 August 2001
Package Outline CLK Cycle Time (ns) Power
Temperature
Mark100-pin TQFP -45 -50 -55 -60 Std. L
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MOSEL VITELIC
Block Diagram
V58C3643204SAT
Columnaddress
counter
Row decoder
Memory array
Column decoder
Sense amplifier & I(O) bus
Bank 0
Column Addresses
Columnaddress
buffer
Row decoder
Memoryarray
Bank 1
512K x 32
Column decoder
Sense amplifier & I(O) bus
Row Addresses
A0 - A10, BA0,BA1A0 - A7, AP, BA0, BA1
Row addres s
Row decoder
Memory array
Columndecoder
Sense amplifier & I(O) bus
buffer
Bank 2
512K x 32 512K x 32512K x 32
RefreshCounter
Row decoder
Memory array
Bank 3
Column decoder
Sense amplifier & I(O) bus
CLK, CLK
DQS
DLL
Strobe
Gen.
Input buffer Output buffer
DQ0-DQ
Data Strobe
Control logic & timing generator
CLK
CLK
CS
CKE
RAS
WE
CAS
DM0-DM3
V58C3643204SAT Rev.1.4 August 2001
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MOSEL VITELIC
V58C3643204SAT
DQ29
VSSQ
DQ30
DQ31
VSS
VDDQ
N.C
N.C
N.C
N.C
N.C
VSSQ
RFU
DQS
VDDQ
VDD
DQ0
DQ1
VSSQ
DQ2
100 Pin TQ FP
Top View
PIN CONFIGURATION
DQ28
VDDQ
DQ27
DQ26
VSSQ
DQ25
DQ24
VDDQ
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
VSS
VDD
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
VREF
DM3
DM1
8079787776757473727170696867666564636261605958575655545352
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
1234567891011121314151617181920212223242526272829
100 Pin TQFP
20 x 14 mm
2
0.65mm pin Pitch
CLK
CLK
CKE
MCL
A8(AP)
51
50
A7
49
A6
48
A5
47
A4
46
VSS
45
A9
44
N.C
43
N.C
42
N.C
41
N.C
40
N.C
39
N.C
38
N.C
37
N.C
36
A10
35
VDD
34
A3
33
A2
32
A1
31
A0
30
DQ3
DQ4
DQ5
DQ6
DQ7
VDDQ
VSSQ
VDDQ
DQ16
Pin Names
CLK, CLK DifferentialClock Input
CKE Clock Enable
CS
RAS
CAS
WE
DQS Data Strobe (Bidirectional)
A
0–A10
BA0, BA1 Bank Select
Chip Select
Row Address Strobe
Column Address Strobe
WriteEnable
Address Inputs
CAS
RAS
CS
BA0
BA1
VSS
DQ17
DQ18
VSSQ
VDD
DQ19
VDDQ
DQ20
DQ21
DQ0–DQ
VSSQ
7
DQ22
DQ23
VDDQ
WE
DM0
DM2
Data Input/Output
DM0-DM3 Data Mask
V
V
V
V
DD
SS
DDQ
SSQ
Power(3.3V± 0.3V)
Ground
Powerfor I/O’s(+2.5V)
Ground for I/O’s
NC Not connected
VREF Reference Voltage for Inputs
RFU Reserved for future use.
V58C3643204SAT Rev.1.4 August 2001
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MOSEL VITELIC
Signal Pin Description
Pin Type Signal Polarity Function
V58C3643204SAT
CLK
CLK
CKE Input Level Active High Activatesthe CLK signalwhen high and deactivatesthe CLK signal when low, thereby
CS
RAS
,CASWEInput Pulse Active Low When sampled at the positive rising edge of the clock, CAS,RAS,andWEdefinethe
DQS Input/
A0 - A10 Input Level — Duringa Bank Activate command cycle, A0-A10defines the row address ( RA0-RA10)
Input Pulse Positive
Edge
Input Pulse Active Low CS enables the commanddecoder whenlow and disables the command decoderwhen
Pulse Active High Active on both edges for data input and output.
Output
The systemclock input. All inputsexcept DQs and DMs are sampled on the risingedge
of CLK.
initiates either the Power Down mode, Suspend mode,or the Self Refresh mode.
high. When the command decoder is disabled, new commands are ignored but previous
operations continue.
command to be executedby the SDRAM.
Centeraligned to input data
Edge aligned to output data
when sampledat the risingclock edge.
Duringa Read or Write commandcycle, A0-An defines the columnaddress (CA0-CAn)
when sampled at the rising clock edge. CAn depends from the SDRAM organization:
2M x 32 SDRAM CAn = CA7 (Page)
In addition to the column address, A8 is used to invoke autoprecharge operation at the
endof theburstreador writecycle.If A8is high,autoprechargeis selectedand BA0,BA1
defines the bank to be precharged. If A8 is low, autoprecharge is disabled.
Duringa Precharge command cycle, A8(=AP)is used in conjunction with BA0 and BA1
to controlwhich bank(s) to precharge.If A10 is high, allf our banks will be precharged
simultaneously regardless of state of BA0 and BA1.
BA0,
BA1
DQx Input/
DM0-DM3 Input Pulse Active High InWrite mode, DM has a latencyof zero and operates as a word maskby allowing input
VDD, VSS Supply Power and groundfor the input buffers and the core logic.
VDDQ
VSSQ
VREF Input Level — SSTL Reference Voltage for Inputs
Input Level — Selects which bank is to be active.
Level — Data Input/Outputpins operate in the same manner as on conventionalDRAMs.
Output
data to be written if it is low but blocks the write operation if is high.
Supply ——Isolated power supply and ground for the output buffers to provide improved noise
immunity.
V58C3643204SAT Rev.1.4 August 2001
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