PRELIMINARY
4M x 4 FAST PAGE MODE
CMOS DYNAMIC RAM
V53C516400A5060
Max. RAS
Max. Column Address Access Time, (t
Min. Page Mode Cycle Time, (t
Min. Read/Write Cycle Time, (t
Access Time, (t
Features
4M x 4-bit organization
Fast Page Mode for a sustained data rate
of 50 MHz
access time: 50, 60 ns
RAS
Low power dissipation
Read-Modify-Write, RAS-Only Refresh,
-Before-RAS Refresh and Hidden Refresh
CAS
Refresh Interval: 4096 cycles/64 ms
Available in 24/26-pin 300 mil SOJ,
and 24/26-pin 300 mil TSOP-II
Single +5V ± 10% Power Supply
TTL Interface
)50 ns60 ns
RAC
)25 ns30 ns
CAA
)35 ns40 ns
PC
)84 ns104 ns
RC
Description
The V53C516400A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C516400A offers Page mode operation. The V53C516400A has asymmetric address,
12-bit row and 10-bit column.
All inputs are TTL compatible. Fast Page Mode
operation allows random access up to 1024 x 4 bits,
within a page, with cycle times as short as 35ns.
These features make the V53C516400A ideally
suited for a wide variety of high performance computer systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
C to 70 ° C• • • ••Blank
V53C516400A Rev. 1.1 March 1998
Package OutlineAccess Time (ns)Power
1
Temperature
MarkKT5060Std.
MOSEL VITELIC
24/26-Pin Plastic SOJ/TSOP-II
PIN CONFIGURATION
Top View
V
CC
I/O
I/O
WE
RAS
A
A
V
CC
1
2
1
3
2
4
5
621A
11
10
A
9
0
A
10
1
A
11
2
A
12
3
13
26
25
24
23
22
19A
18
17
16
15
14
311640002-02
V
SS
I/O
I/O
CAS
OE
9
8
A
7
A
6
A
5
A
4
V
SS
V53C516400A
Pin Names
A
–A
0
11
RAS
CASColumn Address Strobe
4
3
WEWrite Enable
OE
–I/O
I/O
1
4
V
CC
V
SS
NCNo Connect
DescriptionPkg.Pin Count
SOJK26/24
TSOP-IIT26/24
Row, Column Address Inputs
Row Address Strobe
Output Enable
Data Input, Output
5V Supply
0V Supply
V53C516400A Rev. 1.1 March 1998
2
MOSEL VITELIC
Absolute Maximum Ratings*
Operating temperature range ..................0 to 70 ° C
Storage temperature range ............... -55 to 150 ° C
Input/output voltage....-0.5 to min (V
Power supply voltage ..........................-1.0 to 4.6 V
Power dissipation .......................................... 1.0 W
Data out current (short circuit)...................... 50 mA
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Block Diagram
WE
CAS
+0.5, 4.6) V
CC
4096 x 4
V53C516400A
Capacitance*
T
= 25 ° C, V
A
SymbolParameter Typ.Max.Unit
C
IN1
C
IN2
C
OUT
*Note: Capacitance is sampled and not 100% tested.
I/O1 I/O2 I/O3I/O4
Data In
Buffer
4
= 5 V ± 10%, V
CC
Address Input—5pF
, CAS, WE, OE—7pF
RAS
Data Input/Output—7pF
Data Out
Buffer
OE
4
SS
= 0 V
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
RAS
No. 2 Clock
Generator
10
1212
Column
Address
Buffers (10)
Refresh
Controller
Refresh
Counter (12)
12
Row
Address
Buffers (12)
No. 1 Clock
Generator
Voltage Down
Row
Decoder
Generator
10
4096
VCC
VCC (internal)
Column
Decoder
Sense Amplifier
I/O Gating
1024
x4
Memory Array
4096 x 1024 x 4
4
511640002-04
V53C516400A Rev. 1.1 March 1998
3
µ
≤
≤
µ
≤
≤
MOSEL VITELIC
DC and Operating Characteristics
T
= 0 ° C to 70 ° C, V
A
Symbol Parameter
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
V
V
V
V
V
CC
IL
IH
OL
OH
Input Leakage Current
(any input pin)
Output Leakage Current
(for High-Z State)
V
Supply Current,
CC
Operating
V
Supply Current,
CC
TTL Standby
V
Supply Current,
CC
-Only Refresh
RAS
V
Supply Current,
CC
Fast Page Mode Operation
V
Supply Current,
CC
during CAS
V
Supply Current,
CC
CMOS Standby
Power Supply Voltage4.55.05.5V
Input Low Voltage –0.5 0.8V1
Input High Voltage2.4V
Output Low Voltage0.4VI
Output High Voltage2.4VI
CAS
Row address setup time0–0–ns
Row address hold time8–10–ns
Column address setup time0–0–ns
Column address hold time10–15–ns
RAS to CAS delay time 18372045ns
RAS to column address delay 13251530ns
RAS hold time1315–ns
CAS hold time5060–ns
CAS to RAS precharge time5–5–ns
Transition time (rise and fall) 350350ns7
Refresh period–64–64ms
Access time from RAS –50–60ns8, 9
Access time from CAS –13–15ns8, 9
Access time from column address–25–30ns8,10
OE access time–13–15ns
Column address to RAS lead time25–30–ns
Read command setup time0–0–ns
Read command hold time 0–0–ns11
Read command hold time referenced to RAS 0–0–ns11
CAS to output in low-Z 0–0–ns8
Output buffer turn-off delay 013015ns12
Output turn-off delay from OE013015ns12
Data to CAS low delay 0–0–ns13
Data to OE low delay0–0–ns13
CAS high to data delay 13–15–ns14
OE high to data delay 13–15 –ns14
V53C516400A Rev. 1.1 March 1998
5
MOSEL VITELIC
V53C516400A
AC Characteristics
(5,6)
TA = 0 to 70 ˚C,VCC = 5V ±10%, tT = 2 ns
#SymbolParameter
Write Cycle
31t
WCH
32t
WP
33t
WCS
34t
RWL
35t
CWL
36t
DS
37t
DH
Read-modify-Write Cycle
38t
RWC
39t
RWD
40t
CWD
41t
AWD
42t
OEH
Fast Page Mode Cycle
Write command hold time8–10–ns
Write command pulse width8–10–ns
Write command setup time 0–0–ns15
Write command to RAS lead time13–15–ns
Write command to CAS lead time13–15–ns
Data setup time 0–0–ns16
Data hold time 8–10–ns16
Read-write cycle time126–150–ns
RAS to WE delay time 68–80–ns15
CAS to WE delay time 31–35–ns15
Column address to WE delay time43–50–ns15
OE command hold time13–15–ns
-50-60
Unit Notemin.max.min.max.
43t
44t
45t
46t
47t
PC
CP
CPA
RASP
RHPC
Fast Page mode cycle time35–40–ns
CAS precharge time10–10–ns
Access time from CAS precharge –30–35ns7
RAS pulse width in Fast mode50200k60200k ns
CAS precharge to RAS Delay 30–35–ns
Fast Page Mode Read-modify-Write Cycle
48t
49t
PRWC
CPWD
Fast Page mode read-write cycle time71–80–ns
CAS precharge to WE 48–55–ns
CAS-before-RAS Refresh Cycle
50t
51t
52t
53t
54t
CSR
CHR
RPC
WRP
WRH
CAS setup time 10–10–ns
CAS hold time 10–10–ns
RAS to CAS precharge time5–5–ns
Write to RAS precharge time 10–10–ns
Write hold time referenced to RAS10–10–ns
CAS-before-RAS Counter Test Cycle
55t
CPT
CAS precharge time 35–40–ns
V53C516400A Rev. 1.1 March 1998
6
MOSEL VITELIC
V53C516400A
AC Characteristics
(5,6)
TA = 0 to 70 ˚C,VCC = 5V ±10%, tT = 2 ns
#SymbolParameter
Test Mode
56t
57t
58t
59t
WTS
WTH
CHRT
RAHT
Write command setup time10–10–ns
Write command hold time10–10–ns
CAS hold time30–30–ns
RAS hold time in test mode30–30–ns
-50-60
Unit Notemin.max.min.max.
V53C516400A Rev. 1.1 March 1998
7
MOSEL VITELIC
Notes:
1) All voltages are referenced to VSS.
V53C516400A
2) I
3) I
4) Address can be changed once or less while RAS
CC1
CC1
, I
CC3
and I
, I
and I
CC4
depend on output loading. Specified values are obtained with the output open.
CC4
depend on cycle rate.
CC5
= VIL. In case of I
it can be changed once or less during a Fast
CC4
Page mode cycle
5) An initial pause of 200 µs is required after power-up followed by 8 RAS
cycles of which at least one cycle has to be
a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter, a minimum
of 8 CAS
6) AC measurements assume t
7) V
between V
8) Measured with the specified current load and 100 pF at V
the latter of t
9) Operation within the t
only. If t
10) Operation within the t
only. If t
11) Either t
12) t
OFF (max.)
to output voltage levels. t
13) Either t
14) Either t
15) t
WCS
characteristics only. If t
(high impedance) through the entire cycle; if t
-before-RAS initialization cycles instead of 8 RAS cycles are required.
= 2 ns.
T
IH (min.)
, t
and V
and VIL.
IH
RAC
is greater than the specified t
RCD
is greater than the specified t
RAD
or t
RCH
, t
OEZ (max.)
or t
DZC
or t
CDD
, t
RWD
CWD
are reference levels for measuring timing of input signals. Transition times are also measured
IL (max.)
= 0.8 V and VOH = 2.0 V. Access time is determined by
, t
, t
CAC
CAA,tCPA
RCD (max.)
RAD (max.)
must be satisfied for a read cycle.
RRH
, t
. t
OEA
CAC
limit ensures that t
RCD (max.)
limit ensures that t
RAD (max.)
is measured from tristate.
OL
RAC (max.)
can be met. t
limit, then access time is controlled by t
RAC (max.)
can be met. t
limit, then access time is controlled by t
define the time at which the output achieves the open-circuit conditions and are not referenced
is referenced from the rising edge of RAS or CAS, whichever occurs last.
OFF
must be satisfied.
DZO
must be satisfied.
ODD
and t
are not restrictive operating parameters. They are included in the data sheet as electrical
AWD
WCS
> t
WCS (min.)
, the cycle is an early write cycle and data out pin will remain open-circuit
> t
RWD
RWD (min.)
, t
CWD
RCD (max.)
RAD (max.)
> t
CWD (min.)
is specified as a reference point
.
CAC
is specified as a reference point
.
CAA
and t
AWD
> t
AWD (min.)
is a read-write cycle and I/O will contain data read from the selected cells. If neither of the above sets of conditions
is satisfied, the condition of I/O (at access time) is indeterminate.
, the cycle
16) These parameters are referenced to the CAS
write cycles.
V53C516400A Rev. 1.1 March 1998
leading edge in early write cycles and to the WE leading edge in read-
8
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