MOSEL VITELIC
1
V53C16256H
256K x 16 FAST PAGE MODE
CMOS DYNAMIC RAM
PRELIMINARY
V53C16256H Rev. 2.3 June 1998
HIGH PERFORMANCE 30 35 40 45 50 60
Max. RAS
Access Time, (t
RAC
) 30 ns 35 ns 40 ns 45 ns 50 ns 60 ns
Max. Column Address Access Time, (t
CAA
) 16 ns 18 ns 20 ns 22 ns 24 ns 30 ns
Min. Fast Page Mode Cycle Time, (t
PC
) 19 ns 21 ns 23 ns 25 ns 28 ns 35 ns
Min. Read/Write Cycle Time, (t
RC
) 65 ns 70 ns 75 ns 80 ns 90 ns 110 ns
Features
■
256K x 16-bit organization
■
Fast Page Mode for a sustained data rate
of 53 MHz.
■
RAS access time: 30, 35, 40, 45, 50, 60 ns
■
Dual CAS Inputs
■
Low power dissipation
■
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
■
Refresh Interval: 512 cycles/8 ms
■
Available in 40-pin 400 mil SOJ and
40/44L-pin 400 mil TSOP-II packages
■
Single +5V
±
10% Power Supply
■
TTL Interface
Description
The V53C16256H is a 262,144 x 16 bit highperformance CMOS dynamic random access memory. The V53C16256H offers Fast Page mode with
dual CAS inputs. An address, CAS and RAS input
capacitances are reduced to one quarter when the
x4 DRAM is used to construct the same memory
density. The V53C16256H has symmetric address
and accepts 512 cycle 8ms interval.
All inputs are TTL compatible. Fast Page Mode
operation allows random access up to 512 x 16 bits,
within a page, with cycle times as short as 19ns.
The V53C16256H is best suited for graphics, and
DSP applications.
Device Usage Chart
Operating
Temperature
Range
Package Outline Access Time (ns) Power
Temperature
Mark
K T 30 35 40 45 50 60 Std.
0
2
V53C16256H Rev. 2.3 June 1998
MOSEL VITELIC
V53C16256H
FAMILY DEVICE PKG
(t
RAC
)
SPEED
PWR.
V53C 256
30 (30 ns)
35 (35 ns)
40 (40 ns)
45 (45 ns)
50 (50 ns)
60 (60 ns)
TEMP.
BLANK (0¡C to 70¡C)
I (-40¡C to +85¡C)
BLANK (NORMAL)
16256H-01
K (SOJ)
T (TSOP-II)
H16
Description Pkg. Pin Count
SOJ K 40
TSOP-II T 40/44L
40-Pin Plastic SOJ
PIN CONFIGURATION
Top View
40/44 Pin Plastic TSOP-II
PIN CONFIGURATION
Top View
5
6
7
8
9
10
11
12
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
2
3
4
16256H-02
39
40
38
37
36
35
34
33
32
31
30
29
13
14
15
16
17
18
19
20
28
27
26
25
24
23
22
21
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
5
6
7
8
9
10
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
2
3
4
16256H-03
43
44
42
41
40
39
38
37
36
35
13
14
15
16
17
18
19
20
21
22
32
31
30
29
28
27
26
25
24
23
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
Pin Names
A
0
–A
8
Address Inputs
RAS
Row Address Strobe
UCAS
Column Address Strobe Upper Byte Control
LCAS
Column Address Strobe Lower Byte Control
WE
Write Enable
OE
Output Enable
I/O
1
–I/O
16
Data Input, Output
V
CC
+5V Supply
V
SS
0V Supply
NC No Connect
3
MOSEL VITELIC
V53C16256H
V53C16256H Rev. 2.3 June 1998
Absolute Maximum Ratings*
Ambient Temperature
Under Bias................................ –10
°
C
Storage Temperature (plastic)..... –55
°
C
Voltage Relative to V
SS
..................–1.0 V to +7.0V
Data Output Current .....................................50 mA
Power Dissipation..........................................1.0 W
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
= 25
±
10%, V
SS
= 0 V
* Note: Capacitance is sampled and not 100% tested
Symbol Parameter Typ. Max. Unit
C
IN1
Address Input 3 4 pF
C
IN2
RAS
, UCAS, LCAS,
WE, OE
45pF
C
OUT
Data Input/Output 5 7 pF
Block Diagram
A
0
A
1
A
7
A
8
SENSE AMPLIFIERS
REFRESH
COUNTER
V
CC
V
SS
9
I/O
1
ADDRESS BUFFERS
AND PREDECODERS
X0-X
ROW
DECODERS
512
MEMORY
ARRAY
COLUMN DECODERS
DATA I/O BUS
Y
0
-Y
8
512 x 16
I/O
BUFFER
I/O
2
I/O
3
I/O
4
OE CLOCK
GENERATOR
WE CLOCK
GENERATOR
CAS CLOCK
GENERATOR
RAS CLOCK
GENERATOR
OE
WE
LCAS
RAS
•
•
•
8
I/O
5
I/O
6
I/O
7
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
I/O
16
UCAS
256K x 16
16256H-04
4
V53C16256H Rev. 2.3 June 1998
MOSEL VITELIC
V53C16256H
DC and Operating Characteristics
(1-2)
T
A
= 0
±
5%, V
SS
= 0 V, unless otherwise specified.
Symbol Parameter
Access
Time
V53C16256H
Unit Test Conditions NotesMin. Typ. Max.
I
LI
Input Leakage Current
(any input pin)
–10 10
£
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–10 10
£
V
CC
RAS
, CAS at V
IH
I
CC1
V
CC
Supply Current,
Operating
30 200 mA t
RC
= t
RC
(min.) 1, 2
35 190
40 180
45 170
50 160
60 150
I
CC2
V
CC
Supply Current,
TTL Standby
2 mA RAS
, CAS at V
IH
other inputs
³
V
SS
I
CC3
V
CC
Supply Current,
RAS
-Only Refresh
30 200 mA t
RC
= t
RC
(min.) 2
35 190
40 180
45 170
50 160
60 150
I
CC4
V
CC
Supply Current,
Fast Page Mode Operation
30 190 mA Minimum Cycle 1, 2
35 180
40 170
45 160
50 150
60 140
I
CC5
V
CC
Supply Current,
Standby, Output Enabled
other inputs
³
V
SS
2 mA RAS = V
IH
, CAS = V
IL
1
I
CC6
V
CC
Supply Current,
CMOS Standby
1 mA RAS
³
V
CC
– 0.2 V,
All other inputs
³
V
SS
V
IL
Input Low Voltage –1 0.8 V 3
V
IH
Input High Voltage 2.0 V
CC
+ 1 V 3
V
OL
Output Low Voltage 0.4 V I
OL
= 2.0 mA
V
OH
Output High Voltage 2.4 V I
OH
= –2.0 mA
5
MOSEL VITELIC
V53C16256H
V53C16256H Rev. 2.3 June 1998
AC Characteristics
Over all temperature range, V
CC
= 5 V
±
10%, V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
#
JEDEC
Symbol Symbol Parameter
30 35 40 45 50 60
Unit NotesMin. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1t
RL1RH1
t
RAS
RAS
Pulse Width 30 75K 35 75K 40 75 45 75K 50 75K 60 75K ns
2t
RL2RL2
t
RC
Read or Write Cycle
Time
65 70 75 80 90 110 ns
3t
RH2RL2
t
RP
RAS Precharge
Time
25 25 25 25 30 40 ns
4t
RL1CH1
t
CSH
CAS Hold Time 30 35 40 45 50 60 ns
5t
CL1CH1
t
CAS
CAS Pulse Width 5 6 12 13 14 15 ns
6t
RL1CL1
t
RCD
RAS to CAS Delay 15 20 16 24 17 28 18 32 19 36 20 45 ns
7t
WH2CL2tRCS
Read Command
Setup Time
000000ns4
8t
AVRL2
t
ASR
Row Address
Setup Time
000000ns
9t
RL1AX
t
RAH
Row Address Hold
Time
5678910ns
10 t
AVCL2
t
ASC
Column Address
Setup Time
000000ns
11 t
CL1AX
t
CAH
Column Address
Hold Time
5556710ns
12 t
CL1RH1(R)tRSH (R)
RAS Hold Time
(Read Cycle)
10 10 12 13 14 15 ns
13 t
CH2RL2
t
CRP
CAS to RAS
Precharge Time
555555ns
14 t
CH2WX
t
RCH
Read Command
Hold Time
Referenced to CAS
0 0 0 0 0 0 ns 5
15 t
RH2WX
t
RRH
Read Command
Hold Time
Referenced to RAS
0 0 0 0 0 0 ns 5
16 t
OEL1RH2tROH
RAS Hold Time
Referenced to OE
67891010ns
17 t
GL1QV
t
OAC
Access Time from
OE
10 11 12 13 14 15 ns
18 t
CL1QV
t
CAC
Access Time from
CAS
10 11 12 13 14 15 ns 6, 7
19 t
RL1QV
t
RAC
Access Time from
RAS
30 35 45 50 55 60 ns 6, 8, 9
20 t
AVQV
t
CAA
Access Time from
Column Address
16 18 20 22 24 30 ns 6, 7,
10
6
V53C16256H Rev. 2.3 June 1998
MOSEL VITELIC
V53C16256H
21 t
CL1QX
t
LZ
OE or CAS to
Low-Z Output
000000ns16
22 t
CH2QZ
t
HZ
OE or CAS to
High-Z Output
0506060708010ns16
23 t
RL1AX
t
AR
Column Address
Hold Time
from RAS
26 28 30 35 40 50 ns
24 t
RL1AV
t
RAD
RAS to Column
Address Delay
Time
10 14 11 17 12 20 13 23 14 26 15 30 ns 11
25 t
CL1RH1(W)tRSH (W)
RAS or CAS Hold
Time in Write Cycle
10 10 12 13 14 15 ns
26 t
WL1CH1tCWL
Write Command to
CAS Lead Time
10 11 12 13 14 15 ns
27 t
WL1CL2tWCS
Write Command
Setup Time
000000ns12, 13
28 t
CL1WH1tWCH
Write Command
Hold Time
5556710ns
29 t
WL1WH1tWP
Write Pulse Width 5556710ns
30 t
RL1WH1tWCR
Write Command
Hold Time from
RAS
26 28 30 35 40 50 ns
31 t
WL1RH1tRWL
Write Command to
RAS Lead Time
10 11 12 13 14 15 ns
32 t
DVWL2
t
DS
Data in Setup Time 000000ns14
33 t
WL1DX
t
DH
Data in Hold Time 5556710ns14
34 t
WL1GL2tWOH
Write to OE Hold
Time
5567810ns14
35 t
GH2DX
t
OED
OE to Data Delay
Time
5567810ns14
36 t
RL2RL2
(RMW)
t
RWC
Read-Modify-Write
Cycle Time
100 105 110 115 130 170 ns
37 t
RL1RH1
(RMW)
t
RRW
Read-Modify-Write
Cycle RAS Pulse
Width
65 70 75 80 87 105 ns
38 t
CL1WL2tCWD
CAS to WE Delay 26 28 30 32 34 40 ns 12
39 t
RL1WL2tRWD
RAS to WE Delay
in Read-ModifyWrite Cycle
50 54 58 62 68 85 ns 12
40 t
CL1CH1
t
CRW
CAS Pulse Width
(RMW)
44 46 48 50 52 65 ns
#
JEDEC
Symbol Symbol Parameter
30 35 40 45 50 60
Unit NotesMin. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)