Mosel Vitelic V53C16126HT50, V53C16126HT45, V53C16126HT40, V53C16126HT35, V53C16126HT30 Datasheet

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MOSEL VITELIC
1
V53C16126H HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
V53C16126H Rev. 1.3 February 1998
HIGH PERFORMANCE 30 35 40 45 50
Max. RAS
Access Time, (t
RAC
) 30 ns 35 ns 40 ns 45 ns 50 ns
Max. Column Address Access Time, (t
CAA
) 16 ns 18 ns 20 ns 22 ns 24 ns
Min. Fast Page Mode Cycle Time, (t
PC
) 19 ns 21 ns 23 ns 25 ns 28 ns
Min. Read/Write Cycle Time, (t
RC
) 65 ns 70 ns 75 ns 80 ns 90 ns
Features
128K x 16-bit organization
Fast Page Mode for a sustained data rate of 53 MHz
RAS
access time: 30, 35, 40, 45, 50ns
Dual CAS Inputs
Low Power Dissipation
Read-Modify-Write, RAS
-Only Refresh,
CAS-Before-RAS Refresh
Refresh Interval: 512 cycles/8 ms
Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages
Single +5V ± 10% Power Supply
TTL Interface
Description
The V53C16126H is a 131,072 x 16 bit high performance CMOS dynamic random access memory. The V53C16126H offers Fast Page mode with dual CAS
inputs. The V53C16126H has
asymmetric address, 9-bit row and 8-bit column.
All inputs are TTL compatible. Fast Page Mode operation allows random access up to 256 x 16 bits, within a page, with cycle times as short as 19ns.
The V53C16126H is ideally suited for a wide variety of high performance computer systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
Package Outline Access Time (ns) Power
Temperature
MarkK T 30 35 40 45 50 Std.
0 °
C to 70 ° C • ••••• Blank
2
V53C16126H Rev. 1.3 February 1998
MOSEL VITELIC
V53C16126H
Vss I/O16 I/O15 I/O14 I/O13 Vss I/O12 I/O11 I/O10 I/O9 NC LCAS UCAS OE A8 A7 A6 A5 A4 Vss
5 6 7 8
9 10 11 12
Vcc I/O1 I/O2 I/O3 I/O4
Vcc I/O5 I/O6 I/O7 I/O8
NC NC
WE
RAS
NC
A0 A1 A2 A3
Vcc
1 2 3 4
40 39 38 37 36 35 34 33 32 31 30
29 13 14 15 16 17 18 19 20
28
27
26
25
24
23
22
21
16126H-02
5 6 7 8 9
10
Vcc I/O1 I/O2 I/O3 I/O4
Vcc I/O5 I/O6 I/O7 I/O8
NC NC
WE
RAS
NC
A0 A1 A2 A3
Vcc
1 2 3 4
16126H-03
43
44
42 41 40 39 38 37 36 35
13 14 15 16 17 18 19 20 21 22
32 31 30 29 28 27 26 25 24 23
Vss I/O16 I/O15 I/O14 I/O13 Vss I/O12 I/O11 I/O10 I/O9
NC LCAS UCAS OE A8 A7 A6 A5 A4 Vss
FAMILY DEVICE PKG
(t
RAC
)
SPEED
PWR.
V 5 3 C 1 2 6
45 (45 ns) 50 (50 ns)
30 (30 ns) 35 (35 ns) 40 (40 ns)
TEMP.
BLANK (0°C to 70°C)
BLANK (NORMAL)
(SOJ)K
(TSOP-II)T
H16
16126H-01
Description Pkg. Pin Count
SOJ K 40
TSOP-II T 40/44L
Absolute Maximum Ratings*
Ambient Temperature
Under Bias................................ –10 ° C to +80 ° C
Storage Temperature (plastic)..... –55 ° C to +125 ° C
Voltage Relative to V
SS
.................–1.0 V to +7.0 V
Data Output Current .....................................50 mA
Power Dissipation..........................................1.0 W
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
= 25 ° C, V
CC
= 5 V ± 10%, V
SS
= 0 V
*Note: Capacitance is sampled and not 100% tested
Symbol Parameter Typ. Max. Unit
C
IN1
Address Input 3 4 pF
C
IN2
RAS
, CAS, WE, OE 4 5 pF
C
OUT
Data Input/Output 5 7 pF
40-Pin Plastic SOJ
PIN CONFIGURATION
Top View
40/44L-Pin Plastic TSOP-II
PIN CONFIGURATION
Top View
Pin Names
A
0
–A
8
Address Inputs
RAS
Row Address Strobe
UCAS Column Address
Strobe/Upper Byte Control
LCAS
Column Address Strobe/Lower Byte Control
WE
Write Enable OE Output Enable I/O
1
–I/O
16
Data Input, Output V
CC
+5V Supply V
SS
0V Supply NC No Connect
MOSEL VITELIC
V53C16126H
3
V53C16126H Rev. 1.3 February 1998
Block Diagram
A
0
A
1
A
7
A
8
SENSE AMPLIFIERS REFRESH COUNTER
V
CC
V
SS
9
512
256 x 16
I/O
1
ADDRESS BUFFERS
AND PREDECODERS
ROW
DECODERS
MEMORY
ARRAY
512 x 256 x 16
COLUMN DECODERS
DATA I/O BUS
Y0–Y
7
X0– X
8
I/O
BUFFER
I/O
2
I/O
3
I/O
4
OE CLOCK
GENERATOR
WE CLOCK
GENERATOR
CAS CLOCK
GENERATOR
RAS CLOCK
GENERATOR
OE
WE
LCAS
RAS
I/O
5
I/O
6
I/O
7
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
I/O
16
UCAS
128K x 16
16126H-04
4
V53C16126H Rev. 1.3 February 1998
MOSEL VITELIC
V53C16126H
DC and Operating Characteristics
(1-2)
T
A
= 0 ° C to 70 ° C, V
CC
= 5 V ± 10%, V
SS
= 0 V, unless otherwise specified.
Symbol Parameter
Access
Time
V53C16126H
Unit Test Conditions NotesMin. Typ. Max.
I
LI
Input Leakage Current (any input pin)
–10 10
µ
A V
SS
V
IN
V
CC
I
LO
Output Leakage Current (for High-Z State)
–10 10
µ
A V
SS
V
OUT
V
CC
RAS
, CAS at V
IH
I
CC1
V
CC
Supply Current,
Operating
30 200 mA t
RC
= t
RC
(min.) 1, 2 35 190 40 180 45 170 50 160
I
CC2
V
CC
Supply Current,
TTL Standby
2 mA RAS
, CAS at V
IH
,
other inputs ≥ V
SS
I
CC3
V
CC
Supply Current,
RAS
-Only Refresh
30 200 mA t
RC
= t
RC
(min.) 2 35 190 40 180 45 170 50 160
I
CC4
V
CC
Supply Current,
Fast Page Mode Operation
30 190 mA Minimum Cycle 1, 2 35 180 40 170 45 160 50 150
I
CC5
V
CC
Supply Current, Standby Output Enable other inputs ≥ V
SS
2 mA RAS
= V
IH
CAS
= V
IL
1
I
CC6
V
CC
Supply Current, CMOS Standby
1 mA RAS
≥ V
CC
– 0.2 V,
CAS
≥ V
CC
– 0.2 V,
All other inputs ≥ V
SS
V
CC
Supply Voltage 4.5 5.5 V
V
IL
Input Low Voltage –1 0.8 V 3
V
IH
Input High Voltage 2.4 V
CC
+ 1 V 3
V
OL
Output Low Voltage 0.4 V I
OL
= 4.2 mA
V
OH
Output High Voltage 2.4 2.4 V I
OH
= –5 mA
MOSEL VITELIC
V53C16126H
5
V53C16126H Rev. 1.3 February 1998
AC Characteristics
T
A
= 0 ° C to 70 ° C, V
CC
= 5 V ± 10%, V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
# Symbol Parameter
30 35 40 45 50
Unit NotesMin. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1 t
RAS
RAS Pulse Width 30 75K 35 75K 40 75K 45 75K 50 75K ns
2 t
RC
Read or Write Cycle Time 65 70 75 80 90 ns
3 t
RP
RAS Precharge Time 25 25 25 25 30 ns
4 t
CSH
CAS Hold Time 30 35 40 45 50 ns
5 t
CAS
CAS Pulse Width 5 6 7 8 9 ns
6 t
RCD
RAS to CAS Delay 15 20 16 24 17 28 18 32 19 36 ns
7 t
RCS
Read Command Setup Time 0 0 0 0 0 ns 4
8 t
ASR
Row Address Setup Time 0 0 0 0 0 ns
9 t
RAH
Row Address Hold Time 5 6 7 8 9 ns
10 t
ASC
Column Address Setup Time 0 0 0 0 0 ns
11 t
CAH
Column Address Hold Time 5 5 5 6 7 ns
12 t
RSH (R)
RAS Hold Time (Read Cycle) 10 10 10 10 10 ns
13 t
CRP
CAS to RAS Precharge Time 5 5 5 5 5 ns
14 t
RCH
Read Command Hold Time Referenced to CAS
0 0 0 0 0 ns 5
15 t
RRH
Read Command Hold Time Referenced to RAS
0 0 0 0 0 ns 5
16 t
ROH
RAS Hold Time Referenced to OE
6 7 8 9 10 ns
17 t
OAC
Access Time from OE 10 11 12 13 14 ns 12
18 t
CAC
Access Time from CAS 10 11 12 13 14 ns 6,7,14
19 t
RAC
Access Time from RAS 30 35 40 45 50 ns 6, 8, 9
20 t
CAA
Access Time from Column Address
16 18 20 22 24 ns 6,7,10
21 t
LZ
OE or CAS to Low-Z Output 0 0 0 0 0 ns 16
22 t
HZ
OE or CAS to High-Z Output 0 5 0 6 0 6 0 7 0 8 ns 16
23 t
AR
Column Address Hold Time from RAS
26 28 30 35 40 ns
24 t
RAD
RAS to Column Address Delay Time
10 14 11 17 12 20 13 23 14 26 ns 11
25 t
RSH (W)
RAS or CAS Hold Time in Write Cycle
10 10 10 10 10 ns
26 t
CWL
Write Command to CAS Lead Time
10 11 12 13 14 ns
27 t
WCS
Write Command Setup Time 0 0 0 0 0 ns 12, 13
28 t
WCH
Write Command Hold Time 5 5 5 6 7 ns
6
V53C16126H Rev. 1.3 February 1998
MOSEL VITELIC
V53C16126H
29 t
WP
Write Pulse Width 5 5 5 6 7 ns
30 t
WCR
Write Command Hold Time from RAS
26 28 30 35 40 ns
31 t
RWL
Write Command to RAS Lead Time
10 11 12 13 14 ns
32 t
DS
Data in Setup Time 0 0 0 0 0 ns 14
33 t
DH
Data in Hold Time 5 5 5 6 7 ns 14
34 t
WOH
Write to OE Hold Time 5 5 6 7 8 ns 14
35 t
OED
OE to Data Delay Time 5 5 6 7 8 ns 14
36 t
RWC
Read-Modify-Write Cycle Time 100 105 110 115 130 ns
37 t
RRW
Read-Modify-Write Cycle RAS Pulse Width
65 70 75 80 87 ns
38 t
CWD
CAS to WE Delay 26 28 30 32 34 ns 12
39 t
RWD
RAS to WE Delay in Read­Modify-Write Cycle
50 54 58 62 68 ns 12
40 t
CRW
CAS Pulse Width (RMW) 44 46 48 50 52 ns
41 t
AWD
Col. Address to WE Delay 32 35 38 41 42 ns 12
42 t
PC
Fast Page Mode Read or Write Cycle Time
19 21 23 25 28 ns
43 t
CP
CAS Precharge Time 3 4 5 6 7 ns
44 t
CAR
Column Address to RAS Setup Time
16 18 20 22 24 ns
45 t
CAP
Access Time from Column Precharge
19 21 23 25 27 ns 7
46 t
DHR
Data in Hold Time Referenced to RAS
26 28 30 35 40 ns
47 t
CSR
CAS Setup Time CAS- before­RAS Refresh
10 10 10 10 10 ns
48 t
RPC
RAS to CAS Precharge Time 0 0 0 0 0 ns
49 t
CHR
CAS Hold Time CAS-before­RAS Refresh
7 8 8 10 12 ns
50 t
PCM
Fast Page Mode Read-Modify­Write Cycle Time
56 58 60 65 70 ns
51 t
T
Transition Time (Rise and Fall) 1.5 50 1.5 50 1.5 50 1.5 50 1.5 50 ns 15
52 t
REF
Refresh Interval (512 Cycles) 8 8 8 8 8 ms 17
# Symbol Parameter
30 35 40 45 50
Unit NotesMin. Max. Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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