3.3 VOLT 64M x 64 HIGH PERFORMANCE
UNBUFFERED SDRAM MODULE
PRELIMINARY
Features
■ 168 Pin Unbuffered 67,108,864 x 64 bit
Oganization SDRAM Modules
■ Utilizes High Performance 32M x 8 SDRAM in
TSOPII-54 Packages
■ Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
■ Single +3.3V (± 0.3V) Power Supply
■ Programmable CAS
Wrap Sequence (Sequential & Interleave)
■ Auto Refresh (CBR) and Self Refresh
■ All Inputs, Outputs are LVTTL Compatible
■ 8192 Refresh Cycles every 64 ms
■ Serial Present Detect (SPD)
Part Number
V436664S24VXTG-75PC -75PC, CL=2,3
V436664S24VXTG-75-75, CL=3
V436664S24VXTG-10PC -10PC, CL=2,3
Latency, Burst Length, and
Speed
GradeConfiguration
64M x 64
(133 MHz)
64M x 64
(133 MHz)
64M x 64
(100 MHz)
Description
The V436664S24V memory module is organized
67,108,864 x 64 bits in a 168 pin dual in line memory module (DIMM). The 64M x 64 unbuffered
DIMM uses 16 Mosel-Vitelic 32M x 8 SDRAM. The
x64 modules are ideal for use in high performance
computer systems where increased memory density and fast access times are required.
tion about the module configuration, speed, etc. is
written into the E
duction using a serial presence detect protocol (I
synchronous 2-wire bus)
2
PROM device during module pro-
SPD-Table :
Byte Num-
berFunction DescribedSPD Entry Value
0Number of SPD bytes128808080
1Total bytes in Serial PD256080808
2Memory TypeSDRAM040404
3Number of Row Addresses (without BS bits)130D0D0D
4Number of Column Addresses (for x8
SDRAM)
5Number of DIMM Banks2020202
6Module Data Width64404040
7Module Data Width (continued)0000000
8Module I nterface LevelsLVTTL010101
9SDRAM Cycle Time at CL=37.5 ns/10.0 ns7575A0
10SDRAM Access Time from Clock at CL=35.4 ns/6.0 ns545460
100A0A09
-75PC-75-10PC
Hex Value
2
C
11Dimm Config (Error Det/Corr.)none000000
12Refresh Rate/TypeSelf-Refresh, 7.8µs82 82 82
13SDRAM width, Primaryx8080808
14Error Checking SDRAM Data Widthn/a / x8000000
15Minimum Clock Delay from Back to Back
Random Column Address
16Burst Length Support ed1, 2, 4, 80F0F0F
17Number of SDRAM Banks4040404
18Supported CAS
19CS
20WE
21SDRAM DIMM Module AttributesNon Buffered/Non Reg.000000
22SDRAM Device Attributes: GeneralVcc tol ± 10%0E0E0E
23Minimum Clock Cycle Time at CAS
24Maximum Da ta A ccess T i me fr om C lock fo r
25Minimum Clock Cycle Time at CL = 1Not Supported000000
26Maximum Data Access Time from Clock at
LatenciesCS Latency = 0010101
LatenciesWL = 0010101
= 2
CL = 2
CL = 1
LatenciesCL = 3, 2060606
Latenc y
t
= 1 CLK010101
ccd
7.5ns/10.0 ns75A0A0
5.4ns/6.0 ns546060
Not Supported000000
27Minimum Row Precharge Ti me15 ns/20 ns0F1414
V436664S24V Rev. 1.1 March 2002
4
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