Mosel Vitelic V436616Y24VXTG-75PC, V436616Y24VXTG-75, V436616Y24VXTG-10PC Datasheet

MOSEL VITELIC
1
V436616Y24V
3.3VOLT16Mx64HIGHPERFORMANCE SDRAM UNBUFFERED SODIMM
PRELIMINARY
V436616Y24V Rev. 1.0 January2002
Features
Serial Presence Detec t with E
2
PROM
Nonbuffered
Fully Synchronous, All Signals Registered on
Positive Edge of System Clock
Single +3.3V (± 0. 3V) Power Sup ply
All Device Pins are LVTTL Compatible
8192 Refresh C y c les every 64 m s
Self-Refresh Mode
Internal Pipelined Operation; Column Address
can be changed every System Clock
Auto Precharge and Piec harge all Banks by A10
Data Mask Function by DQM
Mode Register Set Programming
Programmable (CAS
Latency:2, 3 Clocks)
Description
The V436616Y24V mem ory module is organized 16,777,216 x 64 bits in a 144 pin SODIMM. The 16M x 64 memory m odule uses 4 Mosel-Vitelic 16M x 16 SDRAM. The x64 modules are ideal f or use in high performance computer systems where increased memory density and fast ac ce ss times are required.
Part Number
Speed Grade Configuration
V436616Y24VXXG-75PC 133MHz CL2,3 16M x 64
V436616Y24VXXG-75 133MHz CL3 16M x 64
V436616Y24VXXG-10PC 100MHz CL2,3 16M x 64
1
Pin 2 on Backside
Pin 144 on Backside
59 61 143
4M x 16 4M x 16
2
V436616Y24V Rev. 1.0 January 2002
MOSEL VITELIC
V436616Y24V
Pin Configurations (Front Side/Back Side)
Note:
1. RAS,CAS,WECASx, CSx are active low signals.
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
VSS VSS DQ0
DQ32
DQ1
DQ33
DQ2
DQ34
DQ3
DQ35
VDD VDD DQ4
DQ36
DQ5
DQ37
DQ6
DQ38
DQ7
DQ39
VSS
VSS DQMB0 DQMB4
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
DQMB1 DQMB5
VDD VDD
A0 A3 A1 A4 A2
A5 VSS VSS DQ8
DQ40
DQ9
DQ41 DQ10 DQ42 DQ11 DQ43
VDD VDD
DQ12 DQ44
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
DQ13 DQ45 DQ14 DQ46 DQ15 DQ47
VSS VSS
NC NC NC
NC CLK0 CKE0
VDD VDD RAS CAS
WE
CKE1
CS0
NC
CS1
A12
73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96
NC
CLK1
VSS VSS
NC NC NC
NC VDD VDD
DQ16 DQ48 DQ17 DQ49 DQ18 DQ50 DQ19 DQ51
VSS VSS
DQ20 DQ52 DQ21 DQ53
97 98
99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120
DQ22 DQ54 DQ23 DQ55
VDD VDD
A6 A7 A8
BA0 VSS VSS
A9 BA1 A10 A11
VDD
VDD DQMB2 DQMB6 DQMB3 DQMB7
VSS
VSS
121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144
DQ24 DQ56 DQ25 DQ57 DQ26 DQ58 DQ27 DQ59
VDD
VDD DQ28 DQ60 DQ29 DQ61 DQ30 DQ62 DQ31 DQ63
VSS
VSS
SDA
SCL VDD VDD
Pin Names
A0–A12, BA0, BA1 Address, Bank Select DQ0–DQ63 Data Inputs/Outputs RAS
Row Address Strobes
CAS
Column Address Strobes
WE
Write Enable
CS
0,CS1 Chip Select DQMB0–DQMB7 Output Enable CKE0, CKE1 Clock Enable CLK0, CLK1 Clock SDA Serial Input/Output SCL Serial Clock VDD Power Supply VSS Ground NC No Connect (Open)
MOSEL VITELIC
V436616Y24V
3
V436616Y24V Rev. 1.0 January 2002
Part Num ber Information
Block Diagram
V 4 3 66 16 Y 2 4 V X T G -XX
SDRAM
3.3V WIDTH
DEPTH
168 PIN Unbuffered
DIMM X16 COMPONENT
REFRESH
RATE 8K
4 BANKS
LVTTL
COMPONENT A=0.17u B=0.14u
REV LEVEL
COMPONENT
PACKAGE, T = TSOP
LEAD FINISH
G=GOLD
SPEED
75PC = 133MHz CL3,2
MOSEL VITELIC
MANUFACTURED
75 = 133MHz CL3 10PC = 100MHz CL3,2
WE
CSO
U0–U7
A0–A12, BA0, BA1
V
DD
U0–U3
CKE0
U4–U7
CKEI
U0-U3
RAS
U0-U3
CAS
U0–U7
U0, U1
CLK0
V
SS
U2, U3
10
SCL SDA
10
SPD
A0 A1
A2
DQMB4
DQMB5
DQ32–39
DQ40–47
UDQM
U2
LDQM
DQMB0
DQMB1
DQ0–7
DQ8–15
UDQM
U0
LDQM
DQMB6
DQMB7
DQ43–54
DQ55–63
UDQM
U3
LDQM
DQMB2
DQMB3
DQ16–23
DQ24–31
UDQM
U1
LDQM
CSWE CSWE
CSWE CSWE
C1–C4
4
V436616Y24V Rev. 1.0 January 2002
MOSEL VITELIC
V436616Y24V
Serial Presence Detect Information
A seria l presence detect storage device -
E
2
PROM - is assembled onto the module. Informa-
tion about the module configurat ion, speed, etc. is
writtenintotheE
2
PROM device during module pro-
duction using a s erial presence detect protocol (I
2
C
synchronous 2-wire bus)
SPD-Table for modules:
Byte Num-
ber Function Described SPD Entry Value
Hex Value
-75PC -75 -10PC
0 Number of SPD bytes 128 80 80 80 1 Total bytes in SerialPD 256 08 08 08 2MemoryType SDRAM 040404 3 Number of Row Addresses (without BS bits) 13 0D 0D 0D 4 Number of Column Addresses (for x16
SDRAM)
9 090909
5 Number of DIMM Banks 1 01 01 01 6 Module Data Width 64 40 40 40 7 Module Data Width (continued) 0 00 00 00 8 Module InterfaceLevels LVTTL 01 01 01
9 SDRAM Cycle Timeat CL=3 7.5 ns/10.0ns 75 75 A0 10 SDRAM Access Time from Clock at CL=3 5.4 ns/6.0 ns 54 54 60 11 Dimm Config (Error Det/Corr.) none 00 00 00 12 Refresh Rate/Type Self-Refresh,7.8 µs828282 13 SDRAM width, Primary x16 10 10 10 14 Error Checking SDRA M Data Width n/a / x16 00 00 00 15 MinimumClockDelayfromBacktoBackRan-
dom Column Address
t
ccd
=1CLK 010101
16 Burst Length Supported 1, 2, 4, 8 0F 0F 0F 17 Number of S DRAM Banks 4 04 04 04 18 Supported CAS
Latencies CL =2, 3 06 06 06
19 CS
Latencies CS Latency=0010101
20 WE
Latencies WL=0 010101 21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00 00 00 22 SDRAM Device Attributes: General Vcc tol ± 10% 0E 0E 0E 23 Minimum Clock Cycle Time at CAS
Latency =
2
7. 5 ns/10.0 ns 75 A0 A0
24 Maximum Data Access Timefrom Clock for
CL = 2
5.4 ns/6.0 ns 54 60 60
25 Minimum Clock Cycle Time at CL = 1 Not Supported 00 00 00 26 MaximumDataAccess Timefrom ClockatCL
=1
Not Supported 00 00 00
27 Minimum Row Precharge Time 15 ns/20 ns 0F 14 14
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