Mosel Vitelic V43658Y04VATG-10PC Datasheet

MOSEL VITELIC
V43658Y04VATG-10PC
3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
Features
JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module (SODIMM) Serial Presence Detect with E Nonbuffered Fully Synchronous, All Signals Registered on Positive Edge of System Clock Single +3.3V ( ± 0.3V) Power Supply All Device Pins are LVTTL Compatible 4096 Refresh Cycles every 64 ms Self-Refresh Mode Internal Pipelined Operation; Column Address can be changed every System Clock Programmable Burst Lengths: 1, 2, 4, 8 or Full Page Auto Precharge and Precharge all Banks by A10 Data Mask Function by DQM Mode Register Set Programming Programmable (CAS Latency: 2, 3 Clocks)
2
PROM
PRELIMINARY
Description
The V43658Y04VATG-10PC memory module is organized 8,388,608 x 64 bits in a 144 pin SODIMM. The 8M x 64 memory module uses 4 Mosel-Vitelic 8M x 16 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.
Part Number
V43658Y04VATG-10PC -10PC
Speed Grade Configuration
8M x 64
(100 MHz)
8M x 16 8M x 16 8M x 16 8M x 16
1
Pin 2 on Backside
V43658Y04VATG-10PC Rev. 1.0 January 2001
59 61 143
Pin 144 on Backside
1
MOSEL VITELIC
V43658Y04VATG-10PC
Pin Configurations (Front Side/Back Side)
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
VSS VSS DQ0
DQ32
DQ1
DQ33
DQ2
DQ34
DQ3
DQ35
VDD VDD DQ4
DQ36
DQ5
DQ37
DQ6
DQ38
DQ7
DQ39
VSS
VSS DQMB0 DQMB4
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
DQMB1 DQMB5
VDD VDD
A0 A3 A1 A4 A2
A5 VSS VSS DQ8
DQ40
DQ9
DQ41 DQ10 DQ42 DQ11 DQ43
VDD VDD
DQ12 DQ44
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
DQ13 DQ45 DQ14 DQ46 DQ15 DQ47
VSS VSS
NC NC NC
NC CLK0 CKE0
VDD VDD RAS CAS
WE
CKE1
CS0
NC
CS1
NC
73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96
NC
CLK1
VSS VSS
NC NC NC
NC VDD VDD
DQ16 DQ48 DQ17 DQ49 DQ18 DQ50 DQ19 DQ51
VSS VSS
DQ20 DQ52 DQ21 DQ53
97 98
99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120
DQ22 DQ54 DQ23 DQ55
VDD VDD
A6 A7 A8
BA0 VSS VSS
A9 BA1 A10 A11
VDD
VDD DQMB2 DQMB6 DQMB3 DQMB7
VSS
VSS
121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144
DQ24 DQ56 DQ25 DQ57 DQ26 DQ58 DQ27 DQ59
VDD
VDD DQ28 DQ60 DQ29 DQ61 DQ30 DQ62 DQ31 DQ63
VSS
VSS
SDA
SCL
VDD
VDD
Note:
, CAS, WE CASx, CSx are active low signals.
1. RAS
Pin Names
A0–A11, BA0, BA1 Address, Bank Select DQ0–DQ63 Data Inputs/Outputs RAS CAS WE
0, CS1 Chip Select
CS DQMB0–DQMB7 Output Enable CKE0, CKE1 Clock Enable CLK0–CLK1 Clock SDA Serial Input/Output SCL Serial Clock VDD Power Supply VSS Ground NC No Connect (Open)
Row Address Strobes Column Address Strobes Write Enable
V43658Y04VATG-10PC Rev. 1.0 January 2001
2
MOSEL VITELIC
Part Number Information
4
V
MOSEL-VITELIC
MANUFACTURED
SDRAM
3.3V
WIDTH
144 PIN UNBUFFERED
SODIMM x16 COMPONENT
Block Diagram
CS0
WE
DQMB0
DQMB1
UDQM
LDQM
Y
8
65
DEPTH
CSWE CSWE
U0
03
DQ0–7
DQ8–15
4
4 BANKS
REFRESH RATE 4K
DQMB4
DQMB5
V
A
LVTTL
T
TSOP
A VERSION
UDQM
U2
LDQM
V43658Y04VATG-10PC
-
G
GOLD
10PC
-10PC PC100 2-2-2
DQ32–39
DQ40–47
DQMB2
DQMB3
V
DD
V
SS
A0–A11, BA0, BA1
CKE0
CKEI
UDQM
LDQM
CSWE CSWE
U1
DQ16–23
DQ24–31
U0–U7
U0–U7 U0–U3 U4–U7
DQMB6
DQMB7
CLK0
SCL SDA
UDQM
LDQM
U3
10
10
SPD
A0 A1 A2
DQ43–54
DQ55–63
U0, U1
U2, U3
V43658Y04VATG-10PC Rev. 1.0 January 2001
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MOSEL VITELIC
Serial Presence Detect Information
A serial presence detect storage device –
2
E
PROM – is assembled onto the module. Informa-
tion about the module configuration, speed, etc. is
written into the E duction using a serial presence detect protocol (I synchronous 2-wire bus)
V43658Y04VATG-10PC
2
PROM device during module pro-
SPD-Table for -10 PC modules:
Hex Value
Byte
Number Function Described SPD Entry Value
0 Number of SPD bytes 128 80
1 Total bytes in Serial PD 256 08
2 Memory Type SDRAM 04
3 Number of Row Addresses (without BS bits) 12 0C
4 Number of Column Addresses (for x16 SDRAM) 9 09
5 Number of DIMM Banks 1 01
6 Module Data Width 64 40
7 Module Data Width (continued) 0 00
8 Module Interface Levels LVTTL 01
9 SDRAM Cycle Time at CL=3 10.0 ns A0
10 SDRAM Access Time from Clock at CL=3 6.0 ns 60
11 Dimm Config (Error Det/Corr.) none 00
12 Refresh Rate/Type Self-Refresh, 15.6 µ s80
13 SDRAM width, Primary x16 10
14 Error Checking SDRAM Data Width n/a / x8 00
15 Minimum Clock Delay from Back to Back
Random Column Address
16 Burst Length Supported 1, 2, 4, 8 0F
17 Number of SDRAM Banks 4 04
18 Supported CAS
19 CS Latencies CS Latency = 0 01
20 WE Latencies WL = 0 01
21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00
22 SDRAM Device Attributes: General Vcc tol ± 10% 0E
23 Minimum Clock Cycle Time at CAS
24 Maximum Data Access Time from Clock for CL = 2 6.0 ns 60
25 Minimum Clock Cycle Time at CL = 1 Not Supported 00
26 Maximum Data Access Time from Clock at CL = 1 Not Supported 00
27 Minimum Row Precharge Time t
28 Minimum Row Active to Row Active Delay t
29 Minimum RAS to CAS Delay t
Latencies CL = 2 & 3 06
Latency = 2 10.0 ns A0
RP
RRD
RCD
t
= 1 CLK 01
ccd
20 ns 14
16 ns 10
20 ns 14
100 MHz
-10PC
2
C
V43658Y04VATG-10PC Rev. 1.0 January 2001
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