Mosel Vitelic V43648Z04VTG-75, V43648Z04VCTG-75 Datasheet

MOSEL VITELIC
1
V43648Z04V(C)TG-75
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
V43648Z04V(C)TG-75 Rev. 1.3 October 2000
Features
Using 8M x 8 SDRAMs
JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module (SODIMM)
Serial Presence Detect with E
2
PROM
Fully Synchronous, All Signals Registered on Positive Edge of System Clock
Single +3.3V ( ± 0.3V) Power Supply
All Device Pins are LVTTL Compatible
4096 Refresh Cycles every 64 ms
Self-Refresh Mode
Internal Pipelined Operation; Column Address can be changed every System Clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
Auto Precharge and Precharge all Banks by A10
Data Mask Function by DQM
Mode Register Set Programming
Programmable (CAS
Latency: 3 Clocks)
Description
The V43648Z04V(C)TG-75 memory module is organized 8,388,608 x 64 bits in a 144 pin SODIMM. The 8M x 64 memory module uses 8 Mosel-Vitelic 8M x 8 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.
Part Number Speed Grade Configuration
V43648Z04V(C)TG-75-75 (133 MHz) 8M x 64
1
Pin 2 on Backside
Pin 144 on Backside
59 61 143
8M x 8 8M x 8 8M x 8 8M x 8
2
V43648Z04V(C)TG-75 Rev. 1.3 October 2000
MOSEL VITELIC
V43648Z04V(C)TG-75
Pin Configurations (Front Side/Back Side)
Note:
1. RAS
, CAS, WE CASx, CSx are active low signals.
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
VSS VSS DQ0
DQ32
DQ1
DQ33
DQ2
DQ34
DQ3
DQ35
VDD VDD DQ4
DQ36
DQ5
DQ37
DQ6
DQ38
DQ7
DQ39
VSS
VSS DQMB0 DQMB4
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
DQMB1 DQMB5
VDD VDD
A0 A3 A1 A4 A2
A5 VSS VSS DQ8
DQ40
DQ9
DQ41 DQ10 DQ42 DQ11 DQ43
VDD VDD
DQ12 DQ44
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
DQ13 DQ45 DQ14 DQ46 DQ15 DQ47
VSS VSS
NC NC NC
NC CLK0 CKE0
VDD VDD RAS CAS
WE NC
CS0
NC NC NC
73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96
NC
CLK1
VSS VSS
NC NC NC
NC VDD VDD
DQ16 DQ48 DQ17 DQ49 DQ18 DQ50 DQ19 DQ51
VSS VSS
DQ20 DQ52 DQ21 DQ53
97 98
99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120
DQ22 DQ54 DQ23 DQ55
VDD VDD
A6 A7 A8
BA0 VSS VSS
A9 BA1 A10 A11
VDD
VDD DQMB2 DQMB6 DQMB3 DQMB7
VSS
VSS
121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144
DQ24 DQ56 DQ25 DQ57 DQ26 DQ58 DQ27 DQ59
VDD
VDD DQ28 DQ60 DQ29 DQ61 DQ30 DQ62 DQ31 DQ63
VSS
VSS
SDA
SCL
VDD
VDD
Pin Names
A0–A11, BA0, BA1 Address, Bank Select DQ0–DQ63 Data Inputs/Outputs RAS
Row Address Strobes
CAS
Column Address Strobes
WE
Write Enable
CS
0 Chip Select DQMB0–DQMB7 Output Enable CKE0 Clock Enable CLK0–CLK1 Clock SDA Serial Input/Output SCL Serial Clock VDD Power Supply VSS Ground NC No Connect (Open)
MOSEL VITELIC
V43648Z04V(C)TG-75
3
V43648Z04V(C)TG-75 Rev. 1.3 October 2000
Part Number Information
Block Diagram
SDRAM
3.3V
V43648Z04V(C)TG-75-02
4
MOSEL-VITELIC
MANUFACTURED
V
144 PIN UNBUFFERED
SODIMM x8 COMPONENT
Z
REFRESH RATE 4K
03
DEPTH
8
4 BANKS
4
TSOP
WIDTH
64
LVTTL
V
GOLD
G
75 (133MHz) PC133
75
T
Component Revision Level Blank = REV B C = REV C
C
DQMB0
CAS
RAS
WE
CS0
V43648Z04V(C)TG-75-03
U0–U7
A0–A11
V
DD
U0–U7
BA0–BA1
CKE
U0–U7
U0, U4
CK0
V
SS
U1, U5
10
SCL SDA
10
U2, U6
CK1
U3, U7
10 10
SPD
A0 A1 A2
DQM
U0
DQ0-7
DQM
U4
DQMB4
DQ32-39
DQMB1
DQM
U1
DQ8-15
DQM
U5
DQMB5
DQ40-47
DQMB2
DQM
U2
DQ16-23
DQM
U6
DQMB6
DQ48-55
DQMB3
DQM
U3
DQ24-31
DQM
U7
DQMB7
DQ56-63
4
V43648Z04V(C)TG-75 Rev. 1.3 October 2000
MOSEL VITELIC
V43648Z04V(C)TG-75
Serial Presence Detect Information
A serial presence detect storage device -
E
2
PROM - is assembled onto the module. Informa-
tion about the module configuration, speed, etc. is
written into the E
2
PROM device during module pro-
duction using a serial presence detect protocol (I
2
C
synchronous 2-wire bus)
SPD-Table for 75 modules:
Byte Number Function Described SPD Entry Value
Hex Value
8Mx64
0 Number of SPD bytes 128 80 1 Total bytes in Serial PD 256 08 2 Memory Type SDRAM 04 3 Number of Row Addresses (without BS bits) 12 0C 4 Number of Column Addresses (for x 8 SDRAM) 9 09 5 Number of DIMM Banks 1 01 6 Module Data Width 64 40 7 Module Data Width (continued) 0 00 8 Module Interface Levels LVTTL 01
9 SDRAM Cycle Time at CL=3 7.5 ns 75 10 SDRAM Access Time from Clock at CL=3 5.4 ns 54 11 Dimm Config (Error Det/Corr.) none 00 12 Refresh Rate/Type Self-Refresh, 15.6 µ s 80 13 SDRAM width, Primary x8 08 14 Error Checking SDRAM Data Width n/a / x8 00 15 Minimum Clock Delay from Back to Back Random
Column Address
t
ccd
= 1 CLK 01
16 Burst Length Supported 1, 2, 4, 8 & full Page 8F 17 Number of SDRAM Banks 4 04 18 Supported CAS
Latencies CL = 3 04 19 CS Latencies CS Latency = 0 01 20 WE Latencies WL = 0 01 21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00 22 SDRAM Device Attributes: General Vcc tol ± 10% 0E 23 Minimum Clock Cycle Time at CAS
Latency = 2 Not Supported 00 24 Maximum Data Access Time from Clock for CL = 2 Not Supported 00 25 Minimum Clock Cycle Time at CL = 1 Not Supported 00 26 Maximum Data Access Time from Clock at CL = 1 Not Supported 00 27 Minimum Row Precharge Time 20 ns 14 28 Minimum Row Active to Row Active Delay t
RRD
15 ns 0F
29 Minimum RAS to CAS
Delay t
RCD
20 ns 14
30 Minimum RAS Pulse Width t
RAS
45 ns 2D
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