Mosel Vitelic V436416S04VTG-75, V436416S04VCTG-75 Datasheet
MOSEL VITELIC
1
V436416S04V(C)TG-75
3.3VOLT16Mx64HIGHPERFORMANCE
PC133 UNBUFFERED SDRAM MODULE
PRELIMINARY
V436416S04V(C)TG-75 Rev. 1.7 September 2001
Features
■ 168 Pin Unbuffered 16,777,216 x 64 bit
Oganization S DRA M DIMMs
■ Utilizes High Performance 8M x 8 SDRAM in
TSOPII-54 Packages
■ Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
■ Single +3.3V (± 0.3V ) Power Supply
■ Programmable CAS
Latency, Burs t Length, and
Wrap Sequence (Sequential & Interleave)
■ Auto Refresh (CBR) and Self Refresh
■ All Inpu ts, Outputs are LVTTL Compatible
■ 4096 Refresh Cycles every 64 ms
■ Serial Present Detect (SPD)
■ SDRAM Performance
■ Supported Latencies at 133 MHz Operation
Description
The V436416S04V(C)TG-75 memory module is
organized 16,777,216 x 64 bits in a 1 68 pin dual in
line memory module (DIMM).The 16M x 64 memory m odule uses 16 Mosel-Vitelic 8M x 8 SDRAM.
The x 64 modules are ideal for use in high performance computersystems where increasedmemory
density and fast acc es s times are required.
Component Used -7 Units
t
CK
Clock Frequency (max.) 143 MHz
t
AC
Clock Access Time CAS
Latency = 3
5.4 ns
CL t
RCD
t
RP
t
RC
3338CLK
V436416S04V(C)TG-75-01
2
V436416S04V(C)TG-75 Rev. 1.7 September 2001
MOSEL VITELIC
V436416S04V(C)TG-75
Pin Configurations (Front Side/Back Side)
Notes:
* These pins are not used in this module.
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VSS
I/O1
I/O2
I/O3
I/O4
VCC
I/O5
I/O6
I/O7
I/O8
I/O9
VSS
I/O10
I/O11
I/O12
I/O13
I/O14
VCC
I/O15
I/O16
CBO*
CB1*
VSS
NC
NC
VCC
WE
DQM0
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
DQM1
CS0
DU
VSS
A0
A2
A4
A6
A8
A10(AP)
BA1
VCC
VCC
CLK0
VSS
DU
CS2
DQM2
DQM3
DU
VCC
NC
NC
CB2*
CB3*
VSS
I/O17
I/O18
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
I/O19
I/O20
VCC
I/O21
NC
DU
CKE1
VSS
I/O22
I/O23
I/O24
VSS
I/O25
I/O26
I/O27
I/O28
VCC
I/O29
I/O30
I/O31
I/O32
VSS
CLK2
NC
WP
SDA
SCL
VCC
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
VSS
I/O33
I/O34
I/O35
I/O36
VCC
I/O37
I/O38
I/O39
I/O40
I/O41
VSS
I/O42
I/O43
I/O44
I/O45
I/O46
VCC
I/O47
I/O48
CB4*
CB5*
VSS
NC
NC
VCC
CAS
DQM4
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
DQM5
CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VCC
CLK1
NC
VSS
CKE0
CS3
DQM6
DQM7
DU
VCC
NC
NC
CB6*
CB7*
VSS
I/O49
I/O50
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
I/O51
I/O52
VCC
I/O53
NC
DU
NC
VSS
I/O54
I/O55
I/O56
VSS
I/O57
I/O58
I/O59
I/O60
VCC
I/O61
I/O62
I/O63
I/O64
VSS
CLK3
NC
SA0
SA1
SA2
VCC
Pin Names
A0–A11 Address Inputs
I/O1–I/O64 Data Inputs/Outputs
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
BA0, BA1 Bank Selects
CKE0
, CKE1 Clock Enable
CS
0–CS3 Chip Select
CLK0–CLK3 Clock Input
DQM0–DQM7 Data Mask
VCC Power (+3.3 Volts)
VSS Ground
SCL Clock for Presence Detect
SDA Serial Data OUT f or Presence
Detect
SA0–A2 Serial Data IN for Presence
Detect
CB0–CB1 Check Bits (x72 Organization)
NC No Connection
DU Don’tUse
MOSEL VITELIC
V436416S04V(C)TG-75
3
V436416S04V(C)TG-75 Rev. 1.7 September 2001
Part Number Information
Block Diagram
SDRAM
3.3V
V436416S04V(C)TG-75-02
4
MOSEL-VITELIC
MANUFACTURED
V
168 PIN UNBUFFERED
DIMM X 8 COMPONENT
S
REFRESH
RATE 4K
03
DEPTH
16
4 BANKS
4
TSOP
C—C Rev
WIDTH
64
LVTTL
V
GOLD
G -
133 MHz
(PC133 3-3-3)
75
T
Component Rev: Blank—B Rev
C
DQM0
I/O1–I/O8
CS0
10Ω
10Ω
10Ω
10Ω
CS1
CS3
CS
DQM4
I/O33–I/O40
DQM1
I/O9–I/O16
DQM5
I/O41–I/O48
DQM2
I/O17–I/O24
CS2
10Ω
10Ω
10Ω
10Ω
DQM6
I/O49–I/O56
DQM3
I/O25–I/O32
DQM7
I/O57–I/O64
V436416S04V(C)TG-75-03
D0-D15
D0-D15
D0-D15
D0-D7
A11-A0, BA0, BA1
V
DD
V
CC
10K
RAS, CAS, WE
CKE0
CKE1
D0-D7
C0-C31
D9-D15
V
SS
SA0
SA1
SA2
SCL
SA0
SA1
SA2
SCL
SDA
WP
E
2
PROM SPD (256 WORD X 8 BIT)
47K
CLOCK WIRING
16M X 64
CLK0 4 SDRAM +3.3pF
CLK1 4 SDRAM +3.3pF
CLK2 4 SDRAM +3.3pF
CLK3 4 SDRAM +3.3pF
DQM
I/O1–I/O8
D0
DQM
I/O1–I/O8
D1
DQM
I/O1–I/O8
D2
DQM
I/O1–I/O8
D3
CS
CS
CS
CS
DQM
I/O1–I/O8
D8
DQM
I/O1–I/O8
D9
DQM
I/O1–I/O8
D10
DQM
I/O1–I/O8
D11
CS
CS
CS
CS
DQM
I/O1–I/O8
D4
DQM
I/O1–I/O8
D5
DQM
I/O1–I/O8
D6
DQM
I/O1–I/O8
D7
CS
CS
CS
DQM
I/O1–I/O8
D12
DQM
I/O1–I/O8
D13
DQM
I/O1–I/O8
D14
DQM
I/O1–I/O8
D15
CS
CS
CSCS
4
V436416S04V(C)TG-75 Rev. 1.7 September 2001
MOSEL VITELIC
V436416S04V(C)TG-75
Serial Presence Detect Information
A serial presence detect storage device -
E
2
PROM - is assembled ontothe module. Informa-
tion about th e module configuration, speed, etc . is
writtenintotheE
2
PROM device during module pro-
duction using a serial presence detect protocol (I
2
C
synchronous 2-wire bus)
SPD-Table for PC133 modules:
Byte Number Function Described SPD Entry Value
Hex Value
16Mx64
0 Number of SPD bytes 128 80
1 Total bytes in Serial PD 256 08
2 Memory Type SDRAM 04
3 Number of Row Addresses (without BS bits) 12 0C
4 Number of Column Addresses (forx8 SDRAM) 9 09
5 Number of DIMM Banks 2 02
6 Module Data Width 64 40
7 Module Data Width (continued) 0 00
8 Module Interface Levels LVTTL 01
9 S DRAM Cycle Time at CL=3 7.5 ns 75
10 SDRAM Access Time from Clock at CL=3 5.4 ns 54
11 Dimm Config (Error Det/Corr.) none 00
12 RefreshRate/Type Self-Refresh, 15.6µs80
13 SDRAM width,Primary x8 08
14 ErrorCheckingSDRAMDataWidth n/a/x8 00
15 MinimumClock Delay from Back to Back Random
Column Address
t
ccd
=1CLK 01
16 Burst Length Supported 1, 2, 4, 8 & full Page 8F
17 Number of SDRAM Banks 4 04
18 Supported CAS
Latencies CL = 2, 3 06
19 CS
Latencies CS Latency = 0 01
20 WE
Latencies WL = 0 01
21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00
22 SDRAM Device Attributes:General Vcc tol ± 10% 0E
23 MinimumClockCycleTimeatCAS
Latency = 2 10.0 ns A0
24 MaximumData AccessTime from Clock for CL = 2 6.0 ns 60
25 MinimumClock Cycle Time at CL = 1 Not Supported 00
26 MaximumData Access Time from Clock at CL = 1 Not Supported 00
27 MinimumRow Precharge Time 20 ns 14
28 Minimum Row Active to Row Active Delay t
RRD
15 ns 0F
29 MinimumRAS to CAS
Delay t
RCD
20 ns 14
30 Minimum RAS Pulse Width t
RAS
45 ns 2D
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