Mosel Vitelic V29LC51002-90P, V29LC51002-90J Datasheet
MOSEL VITELIC
1
V29LC51002
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
V29LC51002 Rev. 0.5 October 2000
Features
■
256Kx8-bit Organization
■
Address Access Time: 90 ns
■
Single 5V ± 10% Power Supply
■
Sector Erase Mode Operation
■
512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 30 µ s (Max)
■
Minimum 1,000 Erase-Program Cycles
■
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100 µ A (Max)
■
Low V
CC
Program Inhibit Below 3.5V
■
CMOS and TTL Interface
■
Packages:
– 32-pin Plastic DIP
– 32-pin PLCC
Description
The V29LC51002 is a high speed 262,144 x 8 bit
CMOS flash memory. Writing or erasing the device
is done with a single 5 Volt power supply. The
device has separate chip enable CE, write enable
WE, and output enable OE controls to eliminate
bus contention.
The V29LC51002 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
Device Usage Chart
Operating
Temperature
Range
Package Outline Access Time (ns)
Temperature
MarkPJ 90
0 °
C to 70 ° C • • • Blank
2
V29LC51002 Rev. 0.5 October 2000
MOSEL VITELIC
V29LC51002
OPERATING VOLTAGE
51: 5V
DEVICE SPEED
C51002-01
V 29 LC 00251 –
90: 90ns
P = PDIP
J = PLCC
PKG.
Pin Configurations
N/C
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
30
31
32
29
28
27
26
25
7
24
23
22
21
20
32-Pin PDIP
Top View
V
CC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O3
I/O4
I/O5
I/O6
I/O7
19
18
17
51002-02
A
6
A
5
A
4
A
3
A
2
A
1
I/O
0
5
6
7
8
9
10
11
12
13
29
51002-03
28
27
26
25
24
23
22
21
A12A15A16NC
VCCWE
A
17
A
0
14
I/O
2
GND
I/O
3
I/O4I/O5I/O
6
A
7
A
13
A
8
A
9
A
11
OE
A
10
I/O
7
CE
A
14
I/O
1
32 Pin PLCC
Top View
15 16 17 18 19 20
4
321323130
Pin Names
A
0
–A
17
Address Inputs
I/O
0
–I/O
7
Data Input/Output
CE
Chip Enable
OE
Output Enable
WE Write Enable
V
CC
5V ± 10% Power Supply
GND Ground
NC No Connect
MOSEL VITELIC
V29LC51002
3
V29LC51002 Rev. 0.5 October 2000
Functional Block Diagram
Capacitance
(1,2)
NOTE:
1. Capacitance is sampled and not 100% tested.
2. T
A
= 25 ° C, V
CC
= 5V ± 10%, f = 1 MHz.
Latch Up Characteristics
(1)
NOTE:
1. Includes all pins except V
CC
. Test conditions: V
CC
= 5V, one pin at a time.
AC Test Load
Symbol Parameter Test Setup Typ. Max. Units
C
IN
Input Capacitance V
IN
= 0 6 8 pF
C
OUT
Output Capacitance V
OUT
= 0 8 12 pF
C
IN2
Control Pin Capacitance V
IN
= 0 8 10 pF
Parameter Min. Max. Unit
Input Voltage with Respect to GND on A
9
, OE
-1 +13 V
Input Voltage with Respect to GND on I/O, address or control pins -1 V
CC
+ 1 V
V
CC
Current -100 +100 mA
Address buffer & latchesA0–A
17
51002-07
I/O Buffer & Data Latches
I/O
0
–I/O
7
Y-Decoder
2,097,152 Bit
Memory Cell Array
X-Decoder
Control Logic
CE
OE
WE
51002-08
IN3064 or Equivalent
IN3064
or Equivalent
2.7 kΩ
6.2 kΩ
+5.0 V
IN3064 or Equivalent
IN3064 or Equivalent
CL = 100 pF
Device Under
Test
4
V29LC51002 Rev. 0.5 October 2000
MOSEL VITELIC
V29LC51002
Absolute Maximum Ratings
(1)
NOTE:
1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Symbol Parameter Commercial Unit
V
IN
Input Voltage (input or I/O pins) -2 to +7 V
V
IN
Input Voltage (A
9
pin, OE
) -2 to +13 V
V
CC
Power Supply Voltage -0.5 to +5.5 V
T
STG
Storage Temerpature (Plastic) -65 to +125
°
C
T
OPR
Operating Temperature 0 to +70
°
C
I
OUT
Short Circuit Current
(2)
200 (Max.) mA
Parameter
Name Parameter Test Conditions Min. Max. Unit
V
IL
Input LOW Voltage V
CC
= V
CC
Min. — 0.8 V
V
IH
Input HIGH Voltage V
CC
= V
CC
Max. 2 — V
I
IL
Input Leakage Current V
IN
= GND to V
CC
, V
CC
= V
CC
Max. —
± 1 µ
A
I
OL
Output Leakage Current V
OUT
= GND to V
CC
, V
CC
= V
CC
Max. —
± 10 µ
A
V
OL
Output LOW Voltage V
CC
= V
CC
Min., I
OL
= 2.1mA — 0.4 V
V
OH
Output HIGH Voltage V
CC
= V
CC
Min, I
OH
= -400 µ A 2.4 — V
I
CC1
Read Current CE
= OE = V
IL
, WE
= V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f = 1/t
RC
Min.,
V
CC
= V
CC
Max.
— 40 mA
I
CC2
Write Current CE
= WE = VIL, OE = V
IH
, V
CC
= V
CC
Max. — 50 mA
I
SB
TTL Standby Current CE
= OE = WE = V
IH
, V
CC
= V
CC
Max. — 2mA
I
SB1
CMOS Standby Current CE
= OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max. — 100
µ
A
V
H
Device ID Voltage for A
9
CE
= OE = V
IL
, WE
= V
IH
11.5 12.5 V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max. — 50
µ
A
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