Mosel Vitelic MS62256H-15RC, MS62256H-15NC, MS62256H-35RC, MS62256H-20RC, MS62256H-25NC Datasheet

MOSEL-VITELIC

MS62256H
32K x 8 HIGH SPEED
CMOS STATIC RAM

MS62256H

ADVANCED

INFORMATION

Features

■ High-speed – 15/20/25/35 ns

■ Low Power dissipation:

MS62256HL

1.1W (Max.) Operating
1mW (Max.) Power down

■ Fully static operation

■ All inputs and outputs directly TTL compatible

■ Three state outputs

■ Ultra low data retention supply current at

VCC = 2V

Pin Configurations

Description

The MS62256H is a 262,144-bit static random
access memory organized as 32,768 words by 8
bits and operates from a single 5 volt supply. It is
built with MOSEL-VITELIC’s high performance twin
tub CMOS process. Inputs and three-state outputs
are TTL compatible and allow for direct interfacing
with common system bus structures. The
MS62256H is available in the following standard
28-pin packages:

600 MIL Plastic DIP
300 MIL Plastic DIP
300 MIL Small Outline J-Bend (SOJ)

Functional Block Diagram

MOSEL-VITELIC

Pin Descriptions

MS62256H

A0 - A

14

Address Inputs

These 15 address inputs select one of the 32768

8-bit words in the RAM.

E Chip Enable Input

E is active LOW. The chip enable must be active
to read from or write to the device. If it is not active,
the device is deselected and is in a standby power
mode. The DQ pins will be in the high-impedance
state when deselected.

G Output Enable Input

The output enable input is active LOW. If the
output enable is active while the chip is selected
and the write enable is inactive, data will be present
on the DQ pins and they will be enabled. The DQ
pins will be in the high impedance state when G is
inactive.

Truth Table

Mode

Standby H X X High Z
Read L L H
Output

Disabled
Write L X L

E G W

L H H High Z

I/O Operation

D

OUT

D

IN

W Write Enable Input

The write enable input is active LOW and controls
read and write operations. With the chip enabled,
when W is HIGH and G is LOW, output data will be
present at the DQ pins; when W is LOW, the data
present on the DQ pins will be written into the
selected memory location.

DQ0 - DQ

7

Data Input/Output Ports

These 8 bidirectional ports are used to read data
from or write data into the RAM.

V

CC

V

SS

Power Supply

Ground

Operating Range

Range

Commercial 0°C to +70°C 5V ± 10%

Ambient

Temperature V

cc

Absolute Maximum Ratings

Symbol Parameter Rating Units

V

Supply Voltage -0.3 to 7

CC

V

Input Voltage -0.3 to 7 V

IN

V

Input/Output Voltage Applied -0.3 to 6

DQ

T

T

1. Stresses greater than those listed under ABSOLUTE

Temperature Under

BIAS

Bias
Storage

STG

Temperature

P

Power Dissipation 1.2 W

D

I

DC Output Current 50 mA

OUT

MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability and degrade performance characteristics.

(1)

Plastic -10 to +125 °C

Plastic -40 to +150 °C

MOSEL-VITELIC

IN

≥ VCC – 0.2V or VIN ≤ 0.2V - -

130

(5)

µA

MS62256H

DC Electrical Characteristics (over the commercial operating range)

Parameter MS62256H

Name Parameter Test Conditions Min. Typ.

V
V

I

I

OL

V

V

I

CC

I

CCSB

I

CCSB1

Guaranteed Input Low Voltage

IL

Guaranteed Input High Voltage

IH

Input Leakage Current V

IL

Output Leakage Current V
Output Low Voltage V

OL

Output High Voltage V

OH

Operating Power Supply Current V
Standby Power Supply Current VCC = Max, E = VIH, IDQ = 0mA - - 40 mA

Power Down Power Supply VCC = Max, E ≥ VCC – 0.2V - - 2 mA

(2,3)

(2)

–0.3 - 0.8 V

2.2 - 6.0 V

= Max, V

CC

= Max, E = VIH or G = VIH, VIN = 0V t o V

CC

= Min, IOL = 8mA - - 0.4 V

CC

= Min, IOH = -4.0mA 2.4 - - V

CC

= Max, E = VIL, IDQ = 0mA, F = F

CC

= 0V to V

IN

CC

m ax

–2 - 2 µA

CC

(4)

–2 - 2 µA

- - 200 mA

Current V

1. Typical characteristics are at VCC = 5V, TA = 25°C.

2. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.

3. VIL (Min.) = –3.0V for pulse width ≤ 20ns

4. F

MAX

= 1/t

RC.

5. L version only.

(1)

Max. Units

Capacitance

(1)

T

= 25°C, f = 1.0MHz

A

Symbol Parameter Conditions Max. Unit

C

Input Capacitance

IN

Input/Output

C

I/O

Capacitance

VIN = 0V
V

= 0V

I/O

8 pF

10 pF

1. This parameter is guaranteed and not tested.

Data Retention Characteristics (over the commercial operating range)

Symbol Parameter Test Conditions Min. Typ.

V

I

CCDR

t

CDR

VCC for Data Retention E ≥ VCC– 0.2V, VIN ≥ VCC– 0.2V or VIN ≤ 0.2V 2.0

DR

Data Retention Current E ≥ VCC– 0.2V, VIN ≥ VCC-– 0.2V or VIN ≤ 0.2V - 2 50

Chip Deselect to Data Retention

(

0 - - ns

Time See Retention Waveform

t

Operation Recovery Time t

R

RC

(3)

1. VCC = 2V, TA = +25°C

2. VCC = 3V

3. tRC = Read Cycle Time

Timing Waveform Low VCC Data Retention Waveform

(1)

(2)

Max

Units

- - V

4)

µA

- - ns