Moje BLF2043F User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D381
BLF2043F
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Oct 19
2002 Mar 05
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
• Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
Top view
Fig.1 Simplified outline.
1
3
2
MBK584
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2200; f2= 2200.1 26 10 (PEP) >11 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
(dB)
p
η
D
(%)
d
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
im
2002 Mar 05 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to mounting base Tmb=25°C; note 1 5 K/W
thermal resistance from mounting base to heatsink 0.5 K/W
drain-source breakdown voltage VGS= 0; ID= 0.2 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−1.5 µA
on-state drain current VGS=V
+9V; VDS=10V 2.8 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS= 10 V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 13 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 11 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 0.5 − pF
2
10
handbook, halfpage
C
(pF)
10
1
−1
10
0 102030
VGS= 0; f= 1 MHz.
C
os
C
is
C
rs
MGW642
VDS (V)
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
2002 Mar 05 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2043F
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; R
= 0.4 K/W; unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2200; f2= 2200.1 26 85 10 (PEP) >11 >30 ≤−26
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
15
handbook, halfpage
G
(dB)
p
10
5
G
= 26 V; f = 2200 MHz at rated load power.
DS
MGW643
60
40
20
η
(%)
D
p
η
D
d
im
(dBc)
−20
−40
−60
0
handbook, halfpage
MGW644
d
3
d
5
d
7
0
0841216
VDS= 26 V; IDQ= 85 mA;
= 2000 MHz; f2= 2000.1 MHz.
f
1
P
(PEP) (W)
L
0
Fig.3 Power gain and efficiency as functions of
peak envelope load power, typical values.
−80
08412
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 2000 MHz; f2= 2000.1 MHz.
f
1
PL (PEP) (W)
16
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05 4
Loading...