MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM900HC-90S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM900HC-90S
● IF ...................................................................900A
● V
RRM ...................................................... 4500V
● Insulated Type
● 1-element in a Pack
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
±0.25
C
57
±0.25
>PPS<
K2
CC
A2
E
G
E
61.5
18
4-M8 NUTS
20
±0.25
40
124
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
+1.0
0
5
38
140
29.5
(C)
K
15
A
CIRCUIT DIAGRAM
K
(C)
(E)
A
(E)
LABEL
57
K1
A1
CM E
High Voltage Diode Module
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM900HC-90S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
VRRM
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
ELECTRICAL CHARACTERISTICS
Symbol Item
I
RRM
VFM
trr
Irr
Qrr
Erec
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Tj = 25 °C
T
T
T
T
Half sign wave
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
Junction temperature
Operating temperature
Storage temperature
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
VRM = VRRM
IF = 900 A
VR = 2250 V, IF = 900 A
di/dt = –1850 A/µs
L
j = 25 °C
j = 25 °C
C = 25 °C
j = 25 °C start, tw = 8.3 ms
j = 25 °C start, tw = 8.3 ms
Conditions
s=100nH, Tj = 125 °C
—
—
—
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
j = 25 °C
T
j = 125 °C
T
T
j = 25 °C
j = 125 °C
T
—
—
—
—
—
—
—
—
INSULATED TYPE
4500
4500
3200
900
7200
216
6000
Typ Max
—
10
4.80
5.80
4.15
1.0
840
750
1.0
kA
Unit
5
30
—
—
—
—
—
V
V
V
A
A
V
°C
°C
°C
mA
V
µs
A
µC
J/P
2
s
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. E
rec is the integral of 0.1VR
x
0.1Irr x dt.
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
CTI
D
a
Ds
LP CE
RCC’+EE’
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
Item Conditions
Junction to case
Case to Fin, λ
D
(c-f)=100µm
M8: Main terminals screw
M6: Mounting screw
c = 25 °C
T
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM900HC-90S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
7.0
3.0
—
—
—
—
—
—
600
19.5
32
—
—
—
16.0
Limits
—
—
1.0
—
—
—
17.5
0.13
21.0
—
13.0
6.0
—
—
—
—
—
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
—
mm
mm
nH
mΩ
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
1800
1600
1400
(A)
F
1200
1000
800
600
FORWARD CURRENT I
400
200
0
02468
FORWARD VOLTAGE V
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS
2.0
VR = 2250V, di/dt = 1850A/µs
T
j
= 125°C, LS = 100nH
(J/p)
rec
1.5
1.0
0.5
Tj = 25°C
T
j
= 125°C
F
(V) FORWARD CURRENT IF (A)
REVERSE RECOVERY ENERGY E
0
0 500 1000 1500 2000
(TYPICAL)
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM900HC-90S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
V
R
= 2250V, di/dt = 1850A/µs
7
j
= 125°C, LS = 100nH
T
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
2
10
23 57
(TYPICAL)
3
10
4
10
7
5
3
rr (A)
2
Irr
trr
23 5447
10
3
10
7
5
3
2
2
10
7
5
3
REVERSE RECOVERY CURRENT I
2
1
10
4
2500
VR ≤ 3200V, di/dt ≤ 3300A/µs
j
T
2000
rr (A)
1500
1000
500
REVERSE RECOVERY CURRENT I
0
0 1000 2000 40003000 5000
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
= 125°C
REVERSE VOLTAGE V
R (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 21K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
10
-1
23 57
10
0
23 57
TIME (s)
10
n
=
th( j –c )
Ri [K/kW]
[sec]
τ
i
( t )
ZR
1
Σ
i=1
0.0059
0.0002
i
1
1–exp
2
0.0978
0.0074
t
–
t
i
3
0.6571
0.0732
4
0.2392
0.4488
High Voltage Diode Module
May 2009
4
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