MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600HE-90S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM600HE-90S
● IF ...................................................................600A
● V
RRM ...................................................... 4500V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
K
A
114
>PPS<
61.5
39.5
LABEL
125.5
±1.0
±0.3
±0.5
20.5
K
A
24
20
±0.5
(15)
40
4-φ6.5
MOUNTING HOLES
85.5
K
A
K
A
4-M8 NUTS
±0.390±1.0
74
+1.0
0
38
29.7
(15)
9.3
7
7
(15)
3
High Voltage Diode Module
CIRCUIT DIAGRAM
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600HE-90S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
VFM
trr
Irr
Qrr
Erec
Note 1. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
rec is the integral of 0.1VR
2. E
Item Conditions
x
0.1Irr x dt.
Tj = 25 °C
j = 25 °C
T
T
j = 25 °C
C = 25 °C
T
T
j = 25 °C start, tw = 8.3 ms
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
—
—
—
VRM = VRRM
IF = 600 A
VR = 2250 V, IF = 600 A
di/dt = –1400 A/µs
s=100nH, Tj = 125 °C
L
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
4500
4500
3000
600
4800
95.6
6000
Typ Max
—
—
4.80
4.20
0.9
615
600
0.62
kA
Unit
5
30
—
—
1.8
—
—
—
°C
°C
°C
mA
µs
µC
J/P
V
V
V
A
A
2
s
V
V
A
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
PERFORMANCE CURVES
Thermal resistance
Contact thermal resistance
Item Conditions
Mounting torque
Mass
Junction to case
Case to Fin, λ
D
(c-f)=100µm
M8: Main terminals screw
M6: Mounting screw
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600HE-90S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
6.67
2.84
—
—
—
15.0
Limits
—
—
0.66
39.0
—
13.0
6.0
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
FORWARD CHARACTERISTICS
1200
1000
(A)
F
800
600
400
FORWARD CURRENT I
200
0
02468 0200 400 600 800 1000 1200 1400
FORWARD VOLTAGE V
(TYPICAL)
1.2
1.0
(J/p)
rec
0.8
0.6
0.4
0.2
Tj = 25°C
j
= 125°C
T
F
(V) FORWARD CURRENT IF (A)
REVERSE RECOVERY ENERGY E
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
VR = 2250V, Tj = 125°C
L
S
= 100nH
0
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600HE-90S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
R
= 2250V, Tj = 125°C
V
7
L
S
= 100nH
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
2
10
23 57
(TYPICAL)
3
10
4
10
7
5
3
rr (A)
2
3
10
10
7
5
3
2
2
10
7
5
3
REVERSE RECOVERY CURRENT I
2
1
10
4
Irr
trr
23 5447
1500
VR ≤ 3000V, di/dt ≤ 2000A/µs
T
j
rr (A)
1000
500
REVERSE RECOVERY CURRENT I
0
0 1000 2000 40003000 5000
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
= 125°C
REVERSE VOLTAGE V
R (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 39K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
10
-2
10
-1
10
0
10
1
23 5723 5723 5723 5723 57
TIME (s)
10
2
High Voltage Diode Module
May 2009
4
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