MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DY-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM400DY-66S
● IF ...................................................................400A
● V
RRM ...................................................... 3300V
● Insulated Type
● 2-element in a Pack
● Copper Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
57 ± 0.25 57 ± 0.25
K1
A1
114
K2
C
A2
EE
G
E
C
61.5
18
C
4-M8 NUTS
20
40
140
124 ± 0.25
6-φ7 MOUNTING HOLES
A1
(E)
(E)
A2
CIRCUIT DIAGRAM
15
K1
K2
(C)
(C)
High Voltage Diode Module
38
5
LABEL
30
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
VFM
trr
Irr
Qrr
Erec
Note 1. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
rec is the integral of 0.1VR
2. E
Item Conditions
x
0.1Irr x dt.
Tj = 25 °C
j = 25 °C
T
T
j = 25 °C
C = 25 °C
T
T
j = 25 °C start, tw = 8.3 ms
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
—
—
—
VRM = VRRM
IF = 400 A
VR = 1650 V, IF = 400 A
di/dt = –800 A/µs
s=200nH, Tj = 125 °C
L
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
3300
2200
400
3200
42.7
6000
Typ Max
—
—
3.75
4.55
3.75
0.75
300
200
0.15
kA
Unit
3.0
10
—
—
—
—
—
°C
°C
°C
mA
µs
µC
J/P
V
V
V
A
A
2
s
V
V
A
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
Mounting torque
Mass
Item Conditions
PERFORMANCE CURVES
Junction to case
(per 1/2 module)
Case to Fin, λ
D
(c-f)=100µm, (per 1/2 module)
M8: Main terminals screw
M6: Mounting screw
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
6.67
2.84
—
—
—
36.0
Limits
—
—
1.5
72.0
—
8.24
3.43
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
FORWARD CHARACTERISTICS
800
600
(A)
F
400
FORWARD CURRENT I
200
0
024 76135
FORWARD VOLTAGE V
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS
0.25
VR = 1650V, di/dt = 800A/µs
T
j
= 125°C, LS = 200nH
(J/p)
0.20
rec
0.15
0.10
0.05
Tj = 25°C
j
= 125°C
T
F
(V) FORWARD CURRENT IF (A)
REVERSE RECOVERY ENERGY E
0
0 200 800400 600 1000
(TYPICAL)
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
VR = 1650V, di/dt = 800A/µs
7
T
j
= 125°C, LS = 200nH
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
1
10
23 57
(TYPICAL)
Irr
trr
2
10
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
3
2
1
10
3
23 5447
10
1000
rr (A)
rr (A)
REVERSE RECOVERY CURRENT I
REVERSE RECOVERY CURRENT I
VR ≤ 2200V, di/dt ≤ 1100A/µs
T
800
600
400
200
0
0 1000 30002000 4000
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
j
= 125°C
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 72K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
10
-1
23 57
10
0
23 57
TIME (s)
10
1
High Voltage Diode Module
May 2009
4
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