<Diode Modules>
.............…..............................…
dual (Half-Bridge)
APPLICATION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
E2
G1
(NC)
E2
(NC)
G2
(NC)
Di1
Di2
C1
C2E1
E1
(NC)
Division of Dimension
Tolerance
0.5
to 3
±0.2
over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
RM400DY-24S
HIGH POWER SWITCHING USE
INSULA TED TYPE
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Forward current IF
Repetitive peak reverse voltage V
Maximum junction temperature T
.....................…
RRM
........................
jmax
4 0 0 A
1 2 0 0 V
1 5 0 °C
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Publication Date : September 2014
TMH-1105 Ver.1.0
1
<Diode Modules>
RM400DY-24S
INSULATED TYPE
Symbol
Item
Conditions
Rating
Unit
V
RRM
Repetitive peak reverse voltage
-
1200
V
V
Reverse DC blocking voltage
-
960
V
IDC
DC forward current
DC, TC=68 °C
(Note1, 2)
400
Tj=25°C start, VRM=0 V
tw=8.3 ms, Tj=25 °C start,
Value for one cycle of surge current
V
isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz , AC 1 min
2500
V
T
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
RRM
V
Forward voltage
IF=400 A, Tj=25 °C
(Note3)
-
2.6
3.3
V
trr
Reverse recovery time
VR=600 V, IF=400 A, Tj=25 °C,
- - 250
ns
Qrr
Reverse recovery charge
di/dt=-3500 A/μs, Inductive load
-
16 - μC
R
Internal lead resistance
Main terminal-chip, per Diode, TC=25 °C
-
0.75 - mΩ
Limits
Min.
Typ.
Max.
(Note2)
(Note2, 4)
Limits
Min.
Typ.
Max.
Ms
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
ec
Flatness of base plate
On the centerline X, Y
(Note5)
-100 - +100
μm
Y
X
+:Convex
-:Concave
3 mm
+:Convex
-:Concave
Mounting
side
Mounting
side
Mounting
side
HIGH POWER SWITCHING USE
MAXI MUM RATINGS (Tj=25 °C, unless otherwise specified)
V
Non-repetitive peak reverse voltage - 1200 V
RSM
R(DC)
I
Surge non-repetitive forward current
FSM
I2t Current square time for fusing
1 cycle of half wave at 60Hz, peak value,
2000
1.66 × 104 A2s
Tj Junction temperature - -40 ~ +150
stg
A
°C
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
I
Reverse current VR=V
RRM
F
, Tj=125 °C - - 10 mA
Err Reverse recovery energy per pulse Tj=125 °C, Inductive load - 23.5 - mJ
AA'-KK'
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
Thermal resistance Junction to case, per Diode
th(j- c)
R
Contact thermal resistance
th(c- s )
Case to heat sink, per 1/2 module,
Thermal grease applied
- - 62 K/kW
- 18 - K/kW
Unit
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt
Mounting torque
Main terminals M 6 screw 3.5 4.0 4.5 N·m
m mass - - 580 - g
Note1. Junction temperature (Tj) should not increase beyond T
2. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink just under
C
jmax
rating.
the chips. Refer to the figure of chip location.The heat sink thermal resistance should measure just under the chips.
3. Pulse width and repetition rate should be such as to cause negligible temperature rise.
4. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
5. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Unit
Publication Date : September 2014
TMH-1105 Ver.1.0
2
<Diode Modules>
RM400DY-24S
INSULATED TYPE
CHIP LOCATIO N (Top view)
Dimension in mm, tolerance: ±1 mm
Di1/Di2: DIODE
IF
C2E1
E2
Es2
(NC)
G2
(NC)
Es1
(NC)
G1
(NC)
C1
V
IF
C2E1
E2
Es2
(NC)
G2
(NC)
Es1
(NC)
G1
(NC)
C1
V
VRM
RG
-VGE
+VGE
Load
+
vR
vGE
0
iF
C1
E
C2E1
C
DUT
CM400DY
-24NF
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
t
rr
iF
0 A
IF
dIF/dt
IFM
vAK
iF
t
0 V
ti
t
VRM
0 A
dIF/dt
HIGH POWER SWITCHING USE
TEST CIRCUIT
Di1 Di2
VEC test circu it
TEST CIRCUIT AND WAVEFORMS
Reverse recovery characteristics test circuit and waveforms
Reverse recovery energy test waveforms
(Integral time instruction drawing)
Publication Date : September 2014
TMH-1105 Ver.1.0
3
<Diode Modules>
RM400DY-24S
INSULATED TYPE
FORWARD CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE
(TYPICAL)
CHARACTERISTICS
(MAXIMUM)
---------------: Tj=25 °C, - - - - -: Tj=125 °C
R
th(j- c)
=62 K/kW
th(j- c)
FORWARD VO LTAG E VF (V)
TIME (S)
REVERSE RECOVERY CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
(TYPICAL)
VR=600 V, di/dt=-3500 A/μs, Tj=125 °C,
VR=600 V, di/dt=-3500 A/μs, Tj=25 °C,
INDUCTIVE LOAD, PER PULSE
INDUCTIVE LOAD
rr
rr
FORWARD CURRENT IF (A)
FORWARD CURRENT IF (A)
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
(A)
F
FORWARD CURRENT I
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
(A)
(ns), I
t
REVERSE RECOVERY ENERGY (mJ)
Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Publication Date : September 2014
TMH-1105 Ver.1.0
4
<Diode Modules>
RM400DY-24S
INSULATED TYPE
HIGH POWER SWITCHING USE
Keep safety first in your circuit designs!
Mitsubishi Electric Corpor ation puts the maxi mum effort into making se miconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flam m abl e material or (iii) prevention against any malfunct io n or m ishap.
Notes regarding these ma t er ials
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Publication Date : September 2014
TMH-1105 Ver.1.0
5
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