MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM400DG-66S
● IF ...................................................................400A
● V
RRM ...................................................... 3300V
● High Insulated Type
● 2-element in a Pack
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
>PET+PBT<
57
±0.5
±0.25
57
±0.25
42
3
61.2
±0.5
16.5
±0.3
1
4-M8 NUTS
±0.1
17
±0.5
±0.25
±0.3
44
140
124
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
+1.0
0
±0.15
48
5
40.4
±0.5
±0.3
22
34.4
±0.5
(K)
4
3
CIRCUIT DIAGRAM
2
(K)
(A)
1
(A)
High Voltage Diode Module
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
RRM
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Ve
Tj
Top
Tstg
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
VFM
trr
Irr
Qrr
Erec
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Partial discharge extinction voltage
T
T
T
T
T
Half sign wave
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
RMS sinusoidal, 60Hz, Q
Junction temperature
Operating temperature
Storage temperature
Item
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
VRM = VRRM
IF = 400 A
VR = 1650 V, IF = 400 A
di/dt = –1350 A/µs
L
j = 25 °C
j = 25 °C
j = 25 °C
C = 25 °C
j = 25 °C start, tw = 8.3 ms
j = 25 °C start, tw = 8.3 ms
Conditions
s=100nH, Tj = 125 °C
PD ≤ 10PC
—
—
—
T
j = 25 °C
T
j = 125 °C
j = 25 °C
T
T
j = 125 °C
10200
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
3300
2200
400
3200
42.7
5100
Typ Max
—
1
2.80
2.70
1.0
530
270
0.3
kA
2
10
—
—
—
—
—
—
V
V
V
A
A
V
V
°C
°C
°C
Unit
mA
V
µs
A
µC
J/P
2
s
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. E
rec is the integral of 0.1VR
x
0.1Irr x dt.
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
t
M
Ms
m
CTI
D
a
Ds
LP CE
RCC’+EE’
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
Item Conditions
Junction to case
(per 1/2 module)
Case to Fin, λ
(c-f)=100µm, (per 1/2 module)
D
M8: Main terminals screw
M6: Mounting screw
c = 25 °C
T
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
7.0
3.0
—
—
—
—
—
—
600
26
56
—
—
—
48.0
Limits
—
—
1.0
—
—
—
44
0.27
54.0
—
15.0
6.0
—
—
—
—
—
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
—
mm
mm
nH
mΩ
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
800
600
(A)
F
400
FORWARD CURRENT I
200
0
0246135
FORWARD VOLTAGE V
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS
0.5
VR = 1650V, di/dt = 1350A/µs
T
j
= 125°C, LS = 100nH
(J/p)
0.4
rec
0.3
0.2
0.1
Tj = 25°C
j
= 125°C
T
F
(V) FORWARD CURRENT IF (A)
REVERSE RECOVERY ENERGY E
0
0 200 600400 800 1000
(TYPICAL)
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
R
= 1650V, di/dt = 1350A/µs
V
7
T
j
= 125°C, LS = 100nH
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
1
10
23 57
(TYPICAL)
Irr
trr
2
10
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
3
2
1
10
3
23 5447
10
1000
rr (A)
rr (A)
REVERSE RECOVERY CURRENT I
REVERSE RECOVERY CURRENT I
VR ≤ 2200V, di/dt ≤ 1800A/µs
T
800
600
400
200
0
0 1000 2000 3000 4000
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
j
= 125°C
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 18K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
10
-1
23 57
10
0
23 57
TIME (s)
10
n
=
th( j –c )
Ri [K/kW]
[sec]
τ
i
( t )
ZR
1
Σ
i=1
0.0059
0.0002
i
1
1–exp
2
0.0978
0.0074
t
–
t
i
3
0.6571
0.0732
4
0.2392
0.4488
High Voltage Diode Module
May 2009
4
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