MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM200DG-130S
● IF ...................................................................200A
● V
RRM ...................................................... 6500V
● High Insulated Type
● 2-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
>PET+PBT<
57
±0.5
±0.25
57
±0.25
42
3
61.2
±0.5
16.5
±0.3
1
4-M8 NUTS
±0.1
17
±0.5
±0.25
±0.3
44
140
124
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
+1.0
0
±0.15
48
5
40.4
±0.5
±0.3
22
34.4
±0.5
(K)
4
3
CIRCUIT DIAGRAM
2
(K)
(A)
1
(A)
High Voltage Diode Module
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
T
j = –40 °C
j = +25 °C
T
T
j = +125 °C
j = –40 °C
T
T
j = +25 °C
j = +125 °C
T
T
j = 25 °C
T
C = 25 °C
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
RMS sinusoidal, 60Hz, Q
PD ≤ 10PC
—
—
—
10200
–40 ~ +150
–40 ~ +125
–40 ~ +125
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Ve
Tj
Top
Tstg
Repetitive peak reverse
voltage
Non-repetitive peak reverse
voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time
integration
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
INSULATED TYPE
5800
6300
6500
5800
6300
6500
4500
200
1600
11
5100
kA
°C
°C
°C
V
V
V
A
A
2
s
V
V
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I
VFM
trr
Irr
Qrr
Erec
Note 1. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
2. E
rec is the integral of 0.1VR
Item Conditions
VRM = VRRM
IF = 200 A
VR = 3600 V, IF = 200 A
di/dt = –670 A/µs
s=100nH, Tj = 125 °C
L
x
0.1Irr x dt.
T
j = 25 °C
j = 125 °C
T
T
j = 25 °C
j = 125 °C
T
Limits
Min Typ Max
—
—
—
—
—
—
—
—
—
3
4.00
3.60
1.0
420
300
0.7
3
30
—
—
—
—
—
—
Unit
mA
V
µs
A
µC
J/P
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
t
M
Ms
m
CTI
D
a
Ds
LP CE
RCC’+EE’
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
Item Conditions
Junction to case
(per 1/2 module)
Case to Fin, λ
(c-f)=100µm, (per 1/2 module)
D
M8: Main terminals screw
M6: Mounting screw
Tc = 25 °C
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
7.0
3.0
—
—
—
—
—
—
600
26
56
—
—
—
48.0
Limits
—
—
1.0
—
—
—
44
0.27
66.0
—
15.0
6.0
—
—
—
—
—
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
—
mm
mm
nH
mΩ
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
400
300
(A)
F
200
FORWARD CURRENT I
100
0
012345678 0 100 200 300 400 500
FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A)
(TYPICAL)
Tj = 25°C
T
j
= 125°C
REVERSE RECOVERY ENERGY
CHARACTERISTICS
1.2
VR = 3600V, di/dt = 670A/µs
T
j
= 125°C, LS = 100nH
1.0
(J/p)
rec
0.8
0.6
0.4
0.2
REVERSE RECOVERY ENERGY E
0
(TYPICAL)
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
V
R
= 3600V, di/dt = 670A/µs
7
j
= 125°C, LS = 100nH
T
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
1
10
23 57
(TYPICAL)
2
10
4
10
7
5
3
rr (A)
2
3
10
10
10
10
7
5
3
2
2
7
5
3
2
1
3
Irr
trr
23 5447
rr (A)
REVERSE RECOVERY CURRENT I
REVERSE RECOVERY CURRENT I
500
VR ≤ 4500V, di/dt ≤ 1000A/µs
j
T
400
300
200
100
0
0 2000 4000 6000 8000
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
= 125°C
FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 66K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
10
-1
23 57
10
0
23 57
TIME (s)
10
n
=
th( j –c )
Ri [K/kW]
[sec]
τ
i
( t )
ZR
1
Σ
i=1
0.0059
0.0002
1
1–exp
i
2
0.0978
0.0074
t
–
t
i
3
0.6571
0.0732
4
0.2392
0.4488
High Voltage Diode Module
May 2009
4
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