MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1800HE-34S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM1800HE-34S
● IF ................................................................ 1800A
● V
RRM ...................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
K
A
114
>PPS<
61.5
39.5
LABEL
125.5
±1.0
±0.3
±0.5
20.5
K
A
24
20
±0.5
(15)
40
4-φ6.5
MOUNTING HOLES
85.5
K
A
K
A
4-M8 NUTS
±0.390±1.0
74
+1.0
0
38
29.7
(15)
9.3
7
7
(15)
3
High Voltage Diode Module
CIRCUIT DIAGRAM
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1800HE-34S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
Note 1. Continuous DC current should be limited to equal to or less than 1200A due to current capacity of internal electrodes.
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current (Note 1)
Surge forward current
Current-squared, time integration
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I
VFM
trr
Irr
Qrr
Erec
Note 2. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 2)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 3)
3. E
rec is the integral of 0.1VR
Item Conditions
x
0.1Irr x dt.
Tj = 25 °C
j = 25 °C
T
T
j = 25 °C
C = 25 °C
T
T
j = 25 °C start, tw = 8.3 ms
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
—
—
—
V
RM = VRRM
IF = 1800 A
VR = 750 V, IF = 1800 A
di/dt = –4000 A/µs
L
s=100nH, Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
1700
1150
1800
9600
384
6000
Typ Max
—
—
2.90
2.40
0.80
850
600
0.40
kA
Unit
5
30
—
—
1.8
—
—
—
°C
°C
°C
mA
µs
µC
J/P
V
V
V
A
A
2
s
V
V
A
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
PERFORMANCE CURVES
Thermal resistance
Contact thermal resistance
Item Conditions
Mounting torque
Mass
Junction to case
Case to Fin, λ
D
(c-f)=100µm
M8: Main terminals screw
M6: Mounting screw
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1800HE-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
6.67
2.84
—
—
—
17.0
Limits
—
—
0.66
22.0
—
13.0
6.0
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
FORWARD CHARACTERISTICS
3000
2500
(A)
F
2000
1500
1000
FORWARD CURRENT I
500
0
024513 01000 2000 3000 4000
FORWARD VOLTAGE V
(TYPICAL)
0.8
(J/p)
rec
0.6
0.4
0.2
Tj = 25°C
T
j
= 125°C
F
(V) FORWARD CURRENT IF (A)
REVERSE RECOVERY ENERGY E
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
VR = 750V, Tj = 125°C
L
S
= 100nH
0
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1800HE-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
R
= 750V, Tj = 125°C
V
7
L
S
= 100nH
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
2
10
23 57
(TYPICAL)
3
10
4
10
7
5
3
2
Irr
trr
23 5447
10
10
10
10
3
7
5
3
2
2
7
5
3
2
1
4
4000
rr (A)
rr (A)
3000
2000
1000
REVERSE RECOVERY CURRENT I
REVERSE RECOVERY CURRENT I
0
0 500 15001000 2000
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
VR ≤ 1150V, di/dt ≤ 4600A/µs
T
j
= 125°C
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 22K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
10
-2
10
-1
10
0
10
1
23 5723 5723 5723 5723 57
TIME (s)
10
2
High Voltage Diode Module
May 2009
4
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