Mitsubishi Electric US, Inc RM1200HE-66S Data Sheet
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM1200HE-66S
● IF ................................................................ 1200A
● V
RRM ...................................................... 3300V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
K
A
114
>PPS<
61.5
39.5
LABEL
125.5
±1.0
±0.3
±0.5
20.5
K
A
24
20
±0.5
(15)
40
4-φ6.5
MOUNTING HOLES
85.5
K
A
K
A
4-M8 NUTS
±0.390±1.0
74
+1.0
0
38
29.7
(15)
9.3
7
7
(15)
3
High Voltage Diode Module
CIRCUIT DIAGRAM
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
VFM
trr
Irr
Qrr
Erec
Note 1. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
rec is the integral of 0.1VR
2. E
Item Conditions
x
0.1Irr x dt.
Tj = 25 °C
j = 25 °C
T
T
j = 25 °C
C = 25 °C
T
T
j = 25 °C start, tw = 8.3 ms
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
—
—
—
VRM = VRRM
IF = 1200 A
VR = 1650 V, IF = 1200 A
di/dt = –3500 A/µs
s=100nH, Tj = 125 °C
L
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
3300
2200
1200
9600
384
6000
Typ Max
—
—
3.20
3.77
3.10
—
1400
900
0.85
kA
Unit
5
30
—
1.4
—
—
—
°C
°C
°C
mA
µs
µC
J/P
V
V
V
A
A
2
s
V
V
A
High Voltage Diode Module
May 2009
2
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