MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM1200HE-66S
● IF ................................................................ 1200A
● V
RRM ...................................................... 3300V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
K
A
114
>PPS<
61.5
39.5
LABEL
125.5
±1.0
±0.3
±0.5
20.5
K
A
24
20
±0.5
(15)
40
4-φ6.5
MOUNTING HOLES
85.5
K
A
K
A
4-M8 NUTS
±0.390±1.0
74
+1.0
0
38
29.7
(15)
9.3
7
7
(15)
3
High Voltage Diode Module
CIRCUIT DIAGRAM
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
RRM
V
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
VFM
trr
Irr
Qrr
Erec
Note 1. It doesn't include the voltage drop by internal lead resistance.
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
rec is the integral of 0.1VR
2. E
Item Conditions
x
0.1Irr x dt.
Tj = 25 °C
j = 25 °C
T
T
j = 25 °C
C = 25 °C
T
T
j = 25 °C start, tw = 8.3 ms
Half sign wave
j = 25 °C start, tw = 8.3 ms
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
—
—
—
VRM = VRRM
IF = 1200 A
VR = 1650 V, IF = 1200 A
di/dt = –3500 A/µs
s=100nH, Tj = 125 °C
L
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
3300
2200
1200
9600
384
6000
Typ Max
—
—
3.20
3.77
3.10
—
1400
900
0.85
kA
Unit
5
30
—
1.4
—
—
—
°C
°C
°C
mA
µs
µC
J/P
V
V
V
A
A
2
s
V
V
A
High Voltage Diode Module
May 2009
2
High Voltage Diode Module
THERMAL CHARACTERISTICS
Symbol Item Conditions
Rth(j-c)
Rth(c-f)
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
PERFORMANCE CURVES
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
FORWARD CHARACTERISTICS
2500
2000
(A)
F
1500
Junction to case
Case to Fin, λ
D
(c-f)=100µm
Item Conditions
M8: Main terminals screw
M6: Mounting screw
(TYPICAL)
grease = 1W/m·K
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
Min Typ Max
6.67
2.84
—
REVERSE RECOVERY ENERGY
CHARACTERISTICS
1.4
VR = 1650V, Tj = 125°C
L
S
= 100nH
1.2
(J/p)
rec
1.0
0.8
—
(TYPICAL)
—
15.0
Limits
—
—
0.66
20.0
—
13.0
6.0
—
Unit
K/kW
K/kW
Unit
N·m
N·m
kg
1000
FORWARD CURRENT I
500
Tj = 25°C
j
= 125°C
0
02461350500 15001000 2000 2500
FORWARD VOLTAGE V
T
F
(V) FORWARD CURRENT IF (A)
0.6
0.4
0.2
REVERSE RECOVERY ENERGY E
0
High Voltage Diode Module
May 2009
3
High Voltage Diode Module
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
2
10
R
= 1650V, Tj = 125°C
V
7
L
S
= 100nH
5
3
2
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME trr (µs)
3
2
-1
10
2
10
23 57
(TYPICAL)
3
10
4
10
7
5
10
10
10
10
3
2
3
7
5
3
2
2
7
5
3
2
1
4
Irr
trr
23 5447
3000
2500
rr (A)
rr (A)
2000
1500
1000
REVERSE RECOVERY CURRENT I
REVERSE RECOVERY CURRENT I
VR ≤ 2200V, di/dt ≤ 5300A/µs
T
500
0
0 500 1000 30002000 25001500 3500
FORWARD CURRENT IF (A)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
j
= 125°C
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c)
= 20K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
10
-2
10
-1
10
0
10
1
23 5723 5723 5723 5723 57
TIME (s)
10
2
High Voltage Diode Module
May 2009
4
Loading...