< HIGH VOLTAGE DIODE MODULES >
RM1200DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE High Voltage Diode Modules
RM1200DG-90F
I
F·································································
V
RRM··························································
1200A
4500V
2-element in a Pack
High insulated Type
Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
December 2012
HVM-2027-B.doc
1
< HIGH VOLTAGE DIODE MODULES >
RM1200DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE High Voltage Diode Modules
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
Repetitive peak reverse voltage
RRM
IF Forward current DC, Tc = 65°C 1200 A
I
Surge forward current 9.8 kA
FSM
2
I
Surge current load integral
t
P
Maximum power dissipation Tc = 25°C 6250 W
tot
V
Isolation voltage RMS, sinusoidal, f = 60 Hz, t = 1 min. 10200 V
iso
Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC 3500 V
Tj Junction temperature −50 ~ +150 °C
T
Operating junction temperature −50 ~ +125 °C
jop
T
Storage temperature −55 ~ +125 °C
stg
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
I
Repetitive reverse current VRM = V
RRM
V
FM
trr Reverse recovery time
Irr Reverse recovery current
Q
Reverse recovery charge
r0Hr
E
rec(10%)
E
Reverse recovery energy
rec
THERMAL CHARACTERISTICS
Symbol Item Conditions
R
th(j-c)
R
th(c-s)
Forward voltage IF = 1200 A
Reverse recovery energy
(Note 1)
Thermal resistance Junction to Case (per 1/2 module) — — 20.0 K/kW
Contact thermal resistance
Tj = −40…+125°C 4500
T
= −50°C 4400
j
= 125°C, tp = 10 ms, Half-sine wave, VR = 0 V
T
j_start
480 kA
Limits
Min Typ Max
RRM
Tj = 25°C — — 3.0
T
= 125°C — 9.0 —
j
Tj = 25°C — 2.55 —
Tj = 125°C — 2.85 3.45
Tj = 25°C — 0.70 —
T
= 125°C — 0.90 —
VCC = 2800 V
I
= 1200 A
F
−d
= 3900 A/µs @ Tj = 25°C
i/dt
−d
= 3600 A/µs @ Tj = 125°C
i/dt
L
= 150 nH
s
Inductive load
j
Tj = 25°C — 1050 —
T
= 125°C — 1140 —
j
Tj = 25°C — 990 —
T
= 125°C — 1560 —
j
Tj = 25°C — 1.44 —
Tj = 125°C — 2.25 —
Tj = 25°C — 1.65 —
= 125°C — 2.55 —
T
j
Limits
Min Typ Max
Case to heat sink,
D
= 100 µm (per 1/ 2 module)
(c-s)
grease
= 1 W/m·k
— 16.0 — K/kW
V
Unit
mA
V
µs
A
µC
J
J
Unit
2
s
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt M8 : Main terminals screw 7.0 — 22.0 N·m
Ms
Mounting torque
M6 : Mounting screw 3.0 — 6.0 N·m
m Mass — 1.0 — kg
CTI Comparative tracking index 600 — — —
da Clearance 26.0 — — mm
ds Creepage distance 56.0 — — mm
L
Parasitic stray inductance — 15.0 — nH
P AK
R
Internal lead resistance Tc = 25°C — 0.09 — mΩ
AA’+KK’
Note 1. E
Note 2. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012
are the integral of 0. 1VR x 0.1IF x dt.
rec(10%)
HVM-2027-B.doc
Limits
Min Typ Max
Unit
2
< HIGH VOLTAGE DIODE MODULES >
RM1200DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE High Voltage Diode Modules
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS (TYPICAL)
24 00
18 00
12 00
Tj = 25 °C
Tj = 12 5° C
6
VCC = 280 0V
-di/dt = 3 600 A/ µs @1 25° C
LS = 150nH , Tj = 125°C
I ndu cti v e lo ad
4.5
3
E
rec
Forward Current [A]
600
1.5
Reverse Recovery Energy [J]
0
012345
Forward Voltage [V]
REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0
0 6 00 12 00 180 0 2 40 0
Forward Current [A]
REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
10 0
VCC = 28 00 V
-di/dt = 3600 A/ µs @12 5°C
LS = 1 50n H, Tj = 12 5°C
In d uc t iv e l o a d
10
1
Reverse Recovery Time [µs]
0.1
100 1000 10000
Forward Current [A]
1 0000
I
rr
1 000
t
rr
100
Reverse Recovery Current [A]
10
40 00
VCC 32 00 V, -di/dt < 6kA/ µ s
Tj = 1 25° C
30 00
20 00
10 00
Reverse Recovery Current [A]
0
0 10002000300040005000
Reverse Voltage [V]
December 2012
HVM-2027-B.doc
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< HIGH VOLTAGE DIODE MODULES >
RM1200DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE High Voltage Diode Modules
PERFORMANCE CURVES
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
= 20.0K / kW
th(j-c )
1
)t(
t
n
RZ
1i
exp1
i)cj(th
i
0.8
0.6
0.4
0.2
Normalized Transient Thermal impedance
0
0.001 0.01 0.1 1 10
Tim e [s ]
1 2 3 4
Ri [K/kW] 0.0055 0.2360 0.4680 0.2905
ti [sec] 0.0001 0.0131 0.0878 0.6247
December 2012
HVM-2027-B.doc
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< HIGH VOLTAGE DIODE MODULES >
RM1200DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE High Voltage Diode Modules
Keep safety first in your circuit designs!
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December 2012
HVM-2027-B.doc
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