Mitsubishi Electric US, Inc RM1200DB-66S Data Sheet
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
RM1200DB-66S
● IF ................................................................ 1200A
● V
RRM ...................................................... 3300V
● Insulated Type
● 2-element in a Pack
● Copper Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
±0.25
C
57
±0.25
>PPS<
K2
CC
A2
E
G
E
61.5
18
4-M8 NUTS
20
±0.25
40
124
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
+1.0
0
5
38
140
29.5
(C)
K1
15
A1
CIRCUIT DIAGRAM
K2
(C)
(E)
A2
(E)
LABEL
57
K1
A1
CM E
High Voltage Diode Module
May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
VRRM
VRSM
VR(DC)
IF
IFSM
I2t
iso
V
Tj
Top
Tstg
ELECTRICAL CHARACTERISTICS
Symbol Item
I
RRM
VFM
trr
Irr
Qrr
Erec
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Tj = 25 °C
T
T
T
T
Half sign wave
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
Junction temperature
Operating temperature
Storage temperature
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
VRM = VRRM
IF = 1200 A
VR = 1650 V, IF = 1200 A
di/dt = –3700 A/µs
L
j = 25 °C
j = 25 °C
C = 25 °C
j = 25 °C start, tw = 8.3 ms
j = 25 °C start, tw = 8.3 ms
Conditions
s=100nH, Tj = 125 °C
—
—
—
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min
j = 25 °C
T
j = 125 °C
T
T
j = 25 °C
j = 125 °C
T
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
3300
2200
1200
9600
384
6000
Typ Max
—
3
2.80
2.70
0.75
1600
850
0.75
kA
Unit
5
30
—
—
—
—
—
—
V
V
V
A
A
V
°C
°C
°C
mA
V
µs
A
µC
J/P
2
s
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. E
rec is the integral of 0.1VR
x
0.1Irr x dt.
High Voltage Diode Module
May 2009
2
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