Mitsubishi Electric US, Inc PSS50MC1F6 Data Sheet

UN (17)

VN (18)

WN (19)

Fo (20)

VN1 (24)

V

VFB

(9)

VP (14)

V

WFB

(11)

WP (15)

UP (13)

VNC (25)

CIN (22)

P (32)

U (31)

V (30)

W (29)

NW (26)

VP1 (16)

LVIC

V

UFB

(7)

NV (27)

NU (28)

VOT (21)

HVIC

P1 (1)

R (36)

S (35)

T (34)

N1 (2)

B (33)

N(B) (3)

AIN (5)

VNC (4)

LVIC

VP1 (6)

V

(8)

V

VFS

(10)

V

WFS

(12)

CFo (23)

< Dual-In-Line Package Intelligent Power Module >

PSS50MC1F6

TRANSFER MOLDING TYPE
INSULATED TYPE

OUTLINE

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side : Drive circuit, High voltage high-speed level shifting,
Control supply under-voltage protect ion (U V) without fault signal output
Built-in discrete bootstrap diode chips with current limiting resistor

● For N-side : Drive circuit, Control supply under-voltage protection (UV),

Short circuit protection (SC) by detecting voltage of external shunt resistor

● Fault signaling : Corresponding to SC fault (N-side IGBT) and UV fault (N-side supply)

● Temperature monitoring : Outputting LVIC temperature by analog signal (No self over temperature protecti on)

● Input interface : 5V high active logic

● For Brake : Drive circuit, Control supply under-voltage protection (UV) without fault signal output

● UL Recognized : UL1557 File E323585

MAIN FUNCTION

CIB(Converter + Inverter + Brake) type IPM

 3-phase Inverter
 Brake circuit
 3-phase Converter

RATING

 Inverter part : 50A/600V (CSTBT)

APPLICATION

 AC200V three phase motor inverter drive

INTERNAL CIRCUIT

UFS

Publication Date : May 2016

1

< Dual-In-Line Package Intelligent Power Module >

MAXIMUM RATINGS
INVERTER PART

Symbol Parameter Condition

Ratings

Unit

V

Supply voltage

Applied between P-NU,NV,NW

450

V

±IC

Each IGBT collector current

TC= 25°C

50

A

±ICP

Each IGBT collector current (peak)

T

C

= 25°C, less than 1ms

100

A

Tj

Junction temperature

-30~+150

°C

BRAKE PART

Symbol Parameter Condition

Ratings

Unit

V

CC

Supply voltage

Applied between P-N(B)

450

V

V

Supply voltage (surge)

Applied between P-N(B)

500

V

V

Collector-emitter voltage

600

V

IF

Forward current

TC= 25°C

25

A

IFP

Forward current (peak)

50

A

Tj

Junction temperature

-30~+150

°C

CONVERTER PART

Symbol Parameter Condition

Ratings

Unit

V

RRM

Repetitive peak reverse voltage

800

V

Io

DC output current

3-phase full wave rectification

50

A

I

Surge forward current

Peak value of half cycle at 60Hz, Non-repetitive

350

A

I2t

I2t capability

Value for 1 cycle of surge current

510

A2s

Junction temperature

CONTROL (PROTECTION) PART

V

VDB

Control supply voltage

Applied between

V

UFB-VUFS

, V

VFB-VVFS

, V

WFB-VWFS

20

V

VIN

Input voltage

Applied between

UP,VP,WP,UN, VN, WN, AIN-VNC

-0.5~VD+0.5

V

VFO

Fault output supply voltage

Applied between

FO-VNC

-0.5~VD+0.5

V

IFO

Fault output current

Sink current at FO terminal

5

mA

VSC

Current sensing input voltage

Applied between CIN-VNC

-0.5~VD+0.5

V

PSS50MC1F6

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tj = 25°C, unless otherwise noted)

CC

V

CC(surge)

V

CES

Supply voltage (surge) Applied between P-NU,NV,NW 500 V

Collector-emitter voltage 600 V

(Note 1)

CC(surge)
CES

IC Each IGBT collector current TC= 25°C (Note 1) 25 A
ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 50 A
V

Repetitive peak reverse voltage 600 V

RRM

FSM

Tj

-30~+150 °C

Symbol Parameter Condition Ratings Unit

VD Control supply voltage Applied between

Note1: Pulse width and period are limited due to junction temperature.

, VN1-VNC 20 V

P1-VNC

Publication Date : May 2016

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< Dual-In-Line Package Intelligent Power Module >

TOTAL SYSTEM

Symbol Parameter Condition

Ratings

Unit

Self protection supply voltage limit
(Short circuit protection capability)

VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs

T

Storage temperature

-40~+125

°C

60Hz, Sinusoidal, AC 1min, between connected all pins and
heat sink plate

THERMAL RESISTANCE

Limits

Min.

Typ.

Max.

R

Inverter IGBT part (per 1/6 module)

- - 0.95

R

th(j-c)F

Inverter FWD part (per 1/6 module)

- - 1.20

R

th(j-c)Q

Brake IGBT part (per 1module)

- - 1.15

R

th(j-c)F

Brake FWD part (per 1module)

- - 1.20

R

Converter part (per 1/6module)

- - 1.10

Tc point
IGBT chip

Heat radiation

6.4mm

19.6mm

Control terminals

Power terminals

PSS50MC1F6

TRANSFER MOLDING TYPE
INSULATED TYPE

V

CC(PROT)

TC Module c as e operation temperature

stg

V

Isolation voltage

iso

Note2: Measurement point of Tc is described in Fig.1.

Fig. 1 Measurement point of Tc

Symbol Parameter Condition

th(j-c)Q

(Note 2)

-30~+125 °C

400 V

2500 V

rms

surface

Unit

Junction to case thermal
resistance

th(j-c)R

Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of DIPIPM

and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of
the applied grease. For reference, Rth(c-f) is about 0.25K/W (per 1chip, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).

(Note 3)

K/W

Publication Date : May 2016

3

< Dual-In-Line Package Intelligent Power Module >

ELECTRICAL CHARACTERISTICS
INVERTER PART

Limits

Min.

Typ.

Max.

IC= 50A, Tj= 25°C

-

1.25

1.60

IC= 50A, Tj= 125°C

-

1.30

1.75

VEC

FWDi forward voltage

VIN= 0V, -IC= 50A

-

1.60

2.10

V

ton

1.20

1.80

2.50

μs

t

C(on)

- 0.50

0.90

μs

t

off

- 2.60

3.60

μs t

C(off)

- 0.35

0.90

μs trr - 0.40 - μs

Tj= 25°C

- - 1

Tj= 125°C

- - 10

BRAKE PART

Limits

Min.

Typ.

Max.

IC= 25A, Tj= 25°C

-

1.50

2.20

IC= 25A, Tj= 125°C

-

1.80

2.45

VF

FWDi forward voltage

VIN= 0V, IF= 25A

-

1.30

1.70

V

ton

1.40

2.10

2.85

μs

t

C(on)

- 0.90

1.35

μs t

off

- 2.90

3.95

μs t

C(off)

- 0.40

0.80

μs

trr - 0.40 - μs

Tj= 25°C

- - 1

Tj= 125°C

- - 10

CONVERTER PART

Limits

Min.

Typ.

Max.

I

RRM

Repetitive reverse current

VR=V

RRM

, Tj=125°C

- - 7.0

mA

VF

Forward voltage drop

IF=50A - 1.2

1.6

V

PSS50MC1F6

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tj = 25°C, unless otherwise noted)

Symbol Parameter Condition

V

CE(sat)

Collector-emitter saturation
voltage

Switching times

VD=VDB = 15V, VIN= 5V

V

= 300V, VD= VDB= 15V

CC

= 50A, Tj= 125°C, VIN= 0↔5V

I

C

Inductive Load (upper-lower arm)

I

CES

Collector-emitter cut-off
current

VCE=V

CES

Symbol Parameter Condition

V

CE(sat)

Collector-emitter saturation
voltage

Switching times

VD=VDB = 15V, VIN= 5V

V

= 300V, VD= VDB= 15V

CC

= 25A, Tj= 125°C, VIN= 0↔5V

I

C

Inductive Load

I

CES

Collector-emitter cut-off
current

VCE=V

CES

Unit

V

mA

Unit

V

mA

Symbol Parameter Condition

Unit

Publication Date : May 2016

4

< Dual-In-Line Package Intelligent Power Module >

CONTROL (PROTECTION) PART

Limits

VD=15V, VIN=5V

- - 5.70

VD=VDB= 15V, VIN=0V

- - 0.55

VD=VDB= 15V, VIN=5V

- - 0.55

V

SC(ref)

Short circuit trip level

VD = 15V

0.455

0.480

0.505

V

UV

DBt

Control supply under-voltage
inverter part

Trip level

10.0 - 12.0

V

UVDt

Control supply under-voltage
inverter part and brake part

Trip level

10.3 - 12.5

V

VOT

Temperature Output

2.89

3.02

3.14

V

=22nF

IIN

Input current

VIN = 5V

0.70

1.00

1.50

mA

V

th(on)

ON threshold voltage

- - 3.5

V

th(off)

OFF threshold voltage

0.8 - -

VF

Bootstrap Di forward voltage

IF=10mA including voltage drop by limiting resistor

-

0.9

1.3

V

R

Built-in limiting resistance

Included in bootstrap Di

16

20

24

Ω

0

100

200

300

400

500

600

700

800

0 1 2

3 4 5 6 7 8

9 10 11 12 13 14 15

I

F

[mA]

VF [V]

0

5

10

15

20

25

30

35

40

45

50

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

I

F

[mA]

VF [V]

PSS50MC1F6

TRANSFER MOLDING TYPE
INSULATED TYPE

Symbol Parameter Condition

=15V, VIN=0V - - 5.70

V

ID

Circuit current

IDB

UV

UVDr Reset level 10.8 - 13.0 V

protection(UV) for P-side of

Reset level 10.5 - 12.5 V

DBr

protection(UV) for N-side of

Total of VP1-VNC, VN1-VNC
Each part of V

V

VFB-VVFS

, V

WFB-VWFS

UFB-VUFS

,

D

(Note 4)

Min. Typ. Max.

Unit

mA

Pull down R=5.1kΩ, LVIC Temperature=100°C (Not e 5)

V

FOH

V

FOL

Fault output voltage

VSC = 1V, IFO = 1mA - - 0.95 V

tFO Fault output puls e width In case of C

Note 4 : SC protection works only for N-side IGB T in inverter part. P l ease select the exte rnal shunt resistance suc h t h at t he SC tri p-l ev el i s less than 1.7 time s of t he

current rating.

5 : DIPIPM don't shut down IGBTs and output fault signal autom a t ical l y whe n t em per at u re rises e xces sively. When temperature exceeds the protective level t hat

user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. V

6 : Fault signal Fo outpu ts w hen SC or UV protection works for N-side IGBT in inverter part. The fault output pulse-width t

of C

(CFO = tFO × 9.1 × 10-6 [F]).

FO

7 : UV protection also works for P-side IGBT in inverter part or brake part without fault signal Fo .
8 : The characteristics of bootstrap Di is described in Fig.2.

VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V

Fo

(Note 6,7)

1.6 2.4

－

ms

Applied between UP, VP, WP, UN, VN, WN, AIN-VNC

(Note 8)

output characteristics is described in Fig. 3.

OT

is depended on the capacitance value

FO

V

Fig. 2 Characteristics of Bootstrap Di VF-IF curve (@Ta=25°C) Including Voltage Drop by Limiting Resistor (Right chart is enlarged chart.)

Publication Date : May 2016

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