<Intelligent Power Module>
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PM800DV1B060
FEATURE
a) Adopting new 5th generation Full-Gate
CSTBT
TM
chip
b) The over-temperature protection which
detects the chip surface temperature of
CSTBT
TM
is adopted.
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
Publication Date : August 2011
1
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
C
P1
PI
VCC
IN
TjA
TjK
OUT
AMP
C1
IGBT F WDi
F
V
NC
PO
PC
Fo
GND
SINK
SC
C2E1
GND
TjA
TjK
OUT
SINK
SC
AMP
IG B T
FWDi
E2
V
V
C
F
NC
NC
N1
NI
NO
VCC
IN
Fo
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
=15V 600 V
CIN
IC T
I
CRM
P
Total Power Dissipation TC=25°C 2500 W
tot
IE Emitter Current TC=25°C 800
I
ERM
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
Collector Current
(Free wheeling Diode Forward current)
=25°C 800
C
Pulse 1600
Pulse 1600
A
A
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage Applied between : VP1-VPC, VN1-VNC 20 V
V
Input Voltage Applied between : CPI-VPC, CNI-VNC 20 V
CIN
VFO Fault Output Supply Voltage Applied between : FPO-VPC, FNO-VNC 20 V
IFO Fault Output Current Sink current at FPO, FNO terminals 20 mA
Publication Date : August 2011
2
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
TC
T
Storage Temperature -40 ~ +125 °C
stg
V
Isolation Voltage
isol
*: TC measurement point is just under the chip.
Supply Voltage Protected by
SC
Supply Voltage (Surge) Applied between : C1-E2, Surge value 500 V
Module case operating
temperature
=13.5V ~ 16.5V
V
D
Inverter Part, T
60Hz,Sinusoidal, Charged part to Base plate,
AC 1min, RMS
=+125°C Start
j
400 V
-20 ~ +100 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
R
R
th(j-c)Q
th(j-c)D
th(c-s)
Thermal Resistance
Contact Thermal Resistance
Junction to case, IGBT (per 1 element)
Junction to case, FWDi (per 1 element)
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1)
Min. Typ. Max.
(Note.1) - - 0.05
(Note.1) - - 0.09
Limits
- 0.014 -
Unit
K/W
Note1: If you use this value, R
should be measured just under the chips.
th(s-a)
Publication Date : August 2011
3
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
Limits
Min. Typ. Max.
V
CEsat
Collector-Emitter Saturation
Voltage
=15V, IC=800A
V
D
V
=0V, Pulsed (Fig. 1)
CIN
VEC Emitter-Collector Voltage IE=800A, VD=15V, V
= 15V (Fig. 2) - 1.7 2.8 V
CIN
Tj=25°C - 1.85 2.35
=125°C - 1.85 2.35
T
j
ton 0.3 0.8 2.0
trr
t
t
t
I
c(on)
off
c(off)
CES
=15V, V
D
V
=300V, IC=800A
Switching Time
CC
T
=125°C
j
Inductive Load (Fig. 3,4)
Collector-Emitter Cut-off
VCE=V
Current
=0V←→15V
CIN
, VD=15V , V
CES
=15V (Fig. 5)
CIN
0.25 0.8
-
-
-
-
0.4 1.0
1.4 2.3
0.3 1.0
Tj=25°C - - 1
=125°C - - 10
T
j
V
CONTROL PART
Symbol Parameter Conditions
Min. Typ. Max.
Limits
Unit
V
s
mA
Unit
ID Circuit Current VD=15V, V
V
Input ON Threshold Voltage 1.2 1.5 1.8
th(ON)
V
Input OFF Threshold Voltage
th(OFF)
Applied between : C
CIN
=15V
PI-VPC
, CNI-VNC
- 2 4
V
N1-VNC
1.7 2.0 2.3
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 1200 - - A
Short Circuit Current Delay
VP1-VPC - 2 4
t
off(SC)
Time
VD=15V (Fig. 3, 6) - 0.2 -
OT Trip level 135 - -
Over Temperature Protection Detect Temperature of IGBT chip
OT
(hys)
UVt Trip level 11.5 12.0 12.5
Supply Circuit Under-Voltage
Hysteresis - 20 -
-20≤Tj≤125°C
UVr
I
FO(H)
I
FO(L)
Protection
Reset level - 12.5 -
- - 0.01
Fault Output Current V
=15V, VFO=15V (Note.2)
D
- 10 15
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
mA
V
s
°C
V
mA
Publication Date : August 2011
4
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol Parameter Conditions
Ms Mounting part screw : M6 3.92 4.9 5.88
Mt
m Weight - - 720 - g
Mounting Torque
Main terminal part screw : M8 8.83 9.81 10.8
Min. Typ. Max.
Limits
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across C1-E2 terminals ≤ 400 V
VD Control Supply Voltage
V
Input ON Voltage ≤ 0.8
CIN(ON)
V
Input OFF Voltage
CIN(OFF)
f
PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
PWM
t
dead
Arm Shoot-through Blocking
Time
Applied between : V
Applied between : C
For IPM’s each input signals (Fig. 7)
, VN1-V
P1-VPC
(Note.3)
PI-VPC
NC
, CNI-VNC
15.0±1.5
≥ 4.0
≥ 3.0
Unit
N・m
V
V
s
Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
Publication Date : August 2011
5
<Intelligent Power Module >
A
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply
voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise
above V
( These test should not be done by using a curve tracer or its equivalent. )
rating of the device.
CES
NC
V
*1
F
V
D
*O
C
*I
V
*C
C1(C2)
V
V
Ic
D
E1(E2)
NC
V
*1
F
*O
C
*I
V
*C
C1(C2)
I
V
E
-Ic
E1(E2)
Fig. 1 V
CEsat
Tes t
Fig. 2 VEC Tes t
NC
V
P1
F
V
V
PO
D1
C
PI
V
PC
NC
V
N1
F
NO
D2
C
NI
V
NC
C1
E1C2
E2
Fig. 3 Switching time and SC test circuit
NC
V
V
D1
Vcc
V
Ic
P1
F
PO
C
PI
V
PC
NC
V
N1
F
NO
D2
C
NI
V
NC
C1
E1C2
Vcc
E2
Ic
Fig. 4 Switching time test waveform
NC
V
*1
F
V
D
*O
C
*I
V
*C
C1(C2)
pulse
VCE
E1(E2)
Fig. 5 I
CES
Tes t
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example
Publication Date : August 2011
6
<Intelligent Power Module >
+
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
VD1
VD2
IF
IF
20k
≥0.1µ
20k
≥0.1µ
≥10µ
≥10µ
V
P1
F
PO
C
PI
V
PC
OUT
Vcc
OT
Fo
SC
IN
GND
C1
Vcc
-
E1C2 (U)
V
N1
F
NO
C
NI
V
NC
Vcc
OUT
OT
Fo
SC
IN
GND
E2
VD3
20k
≥10µ
IF
≥0.1µ
V
P1
F
PO
C
PI
V
PC
Vcc
OUT
OT
Fo
SC
IN
GND
C1
E1C2 (V)
M
V
N1
F
NO
C
NI
V
NC
VccINOUT
Fo
GND
OT
SC
E2
VD4
≥10µ
20k
IF
≥0.1µ
C1
E1C2 (W)
VD5
20k
≥10µ
IF
≥0.1µ
V
P1
F
PO
C
PI
V
PC
OUT
Vcc
OT
Fo
SC
IN
GND
20k
≥10µ
VD6
IF
≥0.1µ
V
N1
F
NO
C
NI
V
NC
Vcc
OUT
OT
Fo
SC
IN
GND
E2
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray
capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: t
PLH
, t
≤ 0.8μs, Use High CMR type.
PHL
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (V
). Also, care should be taken to minimize the instantaneous voltage charge of the power
D
supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2
terminal.
Publication Date : August 2011
7
<Intelligent Power Module >
j
j
j
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
800
700
600
(A)
C
500
400
300
200
COLLECTOR CURRENT I
100
0
0.5 1.0 1.5 2.0
(V)
CEsat
COLLECTO R-EMITTER
SATURATION VOLTAGE V
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
2.5
2.0
1.5
Ic=800A
1.0
12 13 14 15 16 17 18
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
Tj=25°C
T
=125°C
CONTROL VOLTAGE VD (V)
VD=17V
) CHARACTERISTICS
D
(TYPICAL)
VD=13V
VD=15V
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(V)
CEsat
COLLECTOR-EMITTER
SATURATION VOLTAGE V
2.5
2
1.5
1
0.5
0
0 100 200 300 400 500 600 700 800
COLLECTOR CURRENT IC (A)
(TYPICAL)
VD=15V
Tj=25°C
T
=125°C
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
800
700
600
(A)
E
500
400
300
200
EMITTER CURRENT I
100
VD=15V
Tj=25°C
=125°C
T
0
00.511.52
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : August 2011
8
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING TIME (ton, t
10
Vcc=300V
VD=15V
(μs)
off
, t
on
Inductive Load
1
SWITCHING TIME t
0.1
10 100 1000
SWITCHING ENERGY CHARACTERISTICS
40
Vcc=300V
VD=15V
35
30
(mJ/pulse)
off
, E
on
SWITCHING ENERGY E
Inductive Load
25
20
15
10
5
0
0 200 400 600 800 1000
Publication Date : August 2011
) CHARACTERISTICS
off
(TYPICAL)
Tj=25°C
Tj=125°C
toff
ton
COLLECTOR CURRENT IC (A)
Tj=25°C
Tj=125°C
COLLECTOR CURRENT IC (A)
(TYPICAL)
Eoff
Eon
SWITCHING TIME (t
1
tc(off)
, t
) CHARACTERISTICS
c(on)
c(off)
(TYPICAL)
(μs)
c(off)
, t
c(on)
0.1
SWITCHING TIME t
0.01
tc(on)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
10 100 1000
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
0.5
Vcc=300V
VD=15V
0.4
(μs)
rr
0.3
Tj=25°C
Tj=125°C
Inductive Load
(TYPICAL)
500
(A)
Irr
400
300
rr
0.2
trr
200
0.1
100
REVERSE RECOVERY TIME t
0.0
0 200 400 600 800 1000
EMITTER CURRENT IE (A)
0
REVERSE RECOVERY CURRENT I
9
<Intelligent Power Module >
j
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
REVERSE RECOVERY ENERGY CHARACTERISTICS
25
20
(mJ/pulse)
rr
15
10
5
0
REVESE RECOVERY ENERGY E
0 200 400 600 800 1000
UV TRIP LEVEL VS. Tj CHARACTERISTICS
20
18
16
14
12
(V)
r
10
/ UV
t
8
UV
6
4
2
0
-50 0 50 100 150
FREE WHEELING DIODE
(TYPICAL)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
EMITTER CURRENT IE (A)
(TYPICAL)
UVt
UVr
I
VS. fc CHARACTERISTICS
D
(TYPICAL)
80
VD=15V
70
60
50
Tj=25°C
=125°C
T
40
(mA)
D
I
30
20
10
0
0 5 10 15 20 25
fc (kHz)
Tj (°C)
2.0
VD=15V
1.8
1.6
1.4
1.2
1.0
SC
0.8
=25°C is normalized 1)
j
0.6
0.4
(SC of T
0.2
0.0
-50 0 50 100 150
(TYPICAL)
Tj (°C)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
Publication Date : August 2011
10
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
NORMALIZED TRANSIENT
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
th(j-c)
0.1
0.01
THERMAL IMPEDANCE Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.05 K/W
FWDi Part;
Per unit base: Rth(j-c)D=0.09K/W
TIME t (sec)
Publication Date : August 2011
11
<Intelligent Power Module >
p
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
Main Revision for this Edition
Date No.
Revision
November 2011
1
Pages
8
Points
ut characteristics , “VD=13V” and “VD=17V” were reversed.
Out
Publication Date : August 2011
12
<Intelligent Power Module >
PM800DV1B060
FLAT-BASE TYPE
INSULATED PACKAGE
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Publication Date : August 2011
13
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