How it Works
Mitsubishi Electric US, Inc
Loading...
PM75B5L1C060
Data Sheet
12 pgs349.42 Kb0

Mitsubishi Electric US, Inc PM75B5L1C060 Data Sheet

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5L1C060
APPLICATION
PM75B5L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT
b) Error output signal is possible from all
each protection upper and lower IGBT
c) The mounting surface is 90mm×50mm
about 30% less than B5LA type
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature
& under-voltage
chip
Photo voltaic power conditioner
PACKAGE OUTLINES Dimensions in mm
Terminal code
1. VUPC
2. UFo
3. UP
UP1
4. V
5. VVPC
6. VFo
P
7. V
8. VVP1
9. NC
10. NC
11. NC 12
13. VNC
14. V
. NC
N1
15. NC
16. UN
17. VN
18. WN
19. Fo
1
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC Fo
1.5k
V
NCWN
GND SC OT OUT
V
N1
VccFoINGND
V
N
VccFoINGND
GND S C OT OUT
U
N
VccFoINGND
GND SC OT OUT
NC NC NC NC V
PM75B5L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
V
V
P
V
VPC
Fo
1.5k
VccFoINGND
GND SC OT OUT
VP1
U
P
V
U
UPC
GND SC OT OUT
Fo
1.5k
V
UP1
VccFoINGND
PUVWNB
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
IC T
I
CRM
P
Total Power Dissipation TC=25°C 201 W
tot
Collector Current
=25°C 75
C
Pulse 150
IE Emitter Current TC=25°C 75
I
(Free wheeling Diode Forward current) Pulse 150
ERM
=15V 600 V
CIN
A
A
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
CONVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
IC T
I
CRM
P
Total Power Dissipation TC=25°C 201 W
tot
Collector Current
=25°C 75
C
Pulse 150
IE Emitter Current TC=25°C 75
I
(Free wheeling Diode Forward current) Pulse 150
ERM
IF Di Forward Current TC=25°C 75 A
V
Di Rated DC Reverse Voltage TC=25°C 600 V
R(DC)
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
=15V 600 V
CIN
A
A
2
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage
V
Input Voltage
CIN
VFO Fault Output Supply Voltage
IFO Fault Output Current
Applied between : V
Applied between : U
Applied between : U
Sink current at U
Fo, VFo, Fo terminals
UP1-VUPC
P-V
UPC
Fo-V
UPC
, V
VP1-VVPC,VN1-VNC
, VP-V
VPC
, VFo-V
, UN･VN･WN -V
VPC
, Fo-VNC
NC
20 V
20 V
20 V
20 mA
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
T
Storage Temperature
stg
V
Isolation Voltage
isol
*: TC measurement point is just under the chip.
Supply Voltage Protected by SC
Supply Voltage (Surge)
V
=13.5V ~ 16.5V
D
Inverter Part, T
=+125°C Start
j
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS
450 V
500 V
-40 ~ +125 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
th(j-c)Q
R
th(j-c)D
R
th(j-c)Q
R
th(j-c)D
R
th(j-c)D
R
th(c-s)
Note.1: If you use this value, R
Thermal Resistance
Inverter, IGBT (per 1 element) (Note.1) - - 0.62 Inverter, FWDi (per 1 element) (Note.1) - - 1.06 Converter, IGBT (per 1 element) (Note.1) - - 0.62 Converter, FWDi (per 1 element) (Note.1) - - 1.06
Contact Thermal Resistance
should be measured just under the chips.
th(s-a)
Converter, Di (per 1 element) (Note.1) - - 1.06
Case to heat sink, (per 1 module) Thermal grease applied (Note.1)
Min. Typ. Max.
Limits
- 0.06 -
Unit
K/W
3
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol Parameter Conditions
V
CEsat
Collector-Emitter Saturation Voltage
VEC Emitter-Collector Voltage IE=75A, VD=15V, V
ton
trr
t
c(on)
t
off
t
c(off)
I
CES
Switching Time
Collector-Emitter Cut-off Current
CONVERTER PART
Symbol Parameter Conditions
V
CEsat
VEC Emitter-Collector Voltage IE=75A, VD=15V, V
VFM Di Forward Voltage IF=75A
ton
trr
t
c(on)
t
off
t
c(off)
I
CES
Collector-Emitter Saturation Voltage
Switching Time
Collector-Emitter Cut-off Current
V
=15V, IC=75A
D
V
=0V, Pulsed (Fig. 1)
CIN
= 15V (Fig. 2)
CIN
V
=15V, V
D
V
=300V, IC=75A
CC
T
=125°C
j
=0V←→15V
CIN
Inductive Load (Fig. 3,4)
V
V V
V V T
, VD=15V , V
CE=VCES
=15V, IC=75A
D
=0V, Pulsed (Fig. 1)
CIN
=15V, V
D
=300V, IC=75A
CC
=125°C
j
=0V←→15V
CIN
=15V (Fig. 5)
CIN
= 15V (Fig. 2)
CIN
Inductive Load (Fig. 3,4)
V
CE=VCES
, VD=15V , V
=15V (Fig. 5)
CIN
Tj=25°C
T
=125°C
j
Tj=25°C
T
=125°C
j
Tj=25°C
=125°C
T
j
Tj=25°C
T
=125°C
j
PM75B5L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Limits
Min. Typ. Max.
- 2.2 2.7
- 2.2 2.7
- 2.4 3.3
0.1 0.5 1.2
- 0.1 0.2
- 0.15 0.3
- 1.1 2.0
- 0.2 0.4
- - 1
- - 10
Limits
Min. Typ. Max.
- 2.2 2.7
- 2.2 2.7
- 2.4 3.3
- 2.4 3.3
0.1 0.5 1.2
- 0.1 0.2
- 0.15 0.3
- 1.1 2.0
- 0.2 0.4
- - 1
- - 10
Unit
V
V
s
mA
Unit
V
V
V
s
mA
CONTROL PART
Symbol Parameter Conditions
ID Circuit Current VD=15V, V
V
Input ON Threshold Voltage 1.2 1.5 1.8
th(ON)
V
Input OFF Threshold Voltage
th(OFF)
Applied between :
CIN
=15V
U
P-V
, VP-V
UPC
VN1-VNC - 6.5 12
V
, UN･VN･WN -V
VPC
- 1.6 4.0
*P1-V*PC
Min. Typ. Max.
NC
1.7 2.0 2.3
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 112 - - A
t
off(SC)
OT Trip level 135 - -
OT
(hys)
UVt Trip level 11.5 12.0 12.5
UVr
I
FO(H)
I
FO(L)
Short Circuit Current Delay Time
Over Temperature Protection Detect Temperature of IGBT chip
Supply Circuit Under-Voltage Protection
- - 0.01 Fault Output Current V
V
=15V (Fig. 3, 6) - 0.2 - s
D
Hysteresis - 20 -
-20≤Tj≤125°C
=15V, VFO=15V (Note.2)
D
Reset level - 12.5 -
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
Limits
- 10 15
Unit
mA
V
°C
V
mA
4
November. 2011
Loading...
+ 8 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use