Mitsubishi Electric US, Inc PM75B4L1C060 Data Sheet

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B4L1C060

APPLICATION

PM75B4L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

a) Adopting new 5th generation Full-Gate

TM

CSTBT

b) Error output signal is possible from all

each protection upper and lower IGBT

c) The mounting surface is 90mm×50mm

about 30% less than B4LA type

• Monolithic gate drive & protection logic

• Detection, protection & status indication
circuits for, short-circuit, over-temperature

& under-voltage.

chip

Photo voltaic power conditioner

PACKAGE OUTLINES Dimensions in mm

Terminal code

1. VUPC

2. UFo

3. UP

UP1

4. V

5. VVPC

6. VFo

P

7. V

8. VVP1

9. NC

10. NC

11. NC
12

13. VNC

14. V

. NC

N1

15. NC

16. UN

17. VN

18. NC

19. Fo

1

November. 2011

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B4L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

V

P

NC Fo

1.5k

V

NC

NC

V

N1

V

N

U

N

NC NC NC NC V

VPC

VP1

V

Fo

1.5k

U

V

P

V

UPC

UP1

U

Fo

1.5k

VccFoINGND

VccFoINGND

VccFoINGND

VccFoINGND

GND SC OT OUT

GND SC OT OUT

GND SC OT OUT

GND SC OT OUT

PUVWNB

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Conditions Ratings Unit

V

Collector-Emitter Voltage VD=15V, V

CES

IC T

I

CRM

P

Total Power Dissipation TC=25°C 201 W

tot

Collector Current

=25°C 75

C

Pulse 150

IE Emitter Current TC=25°C 75

I

(Free wheeling Diode Forward current) Pulse 150

ERM

Tj Junction Temperature -20 ~ +150 °C

*: Tc measurement point is just under the chip.

=15V 600 V

CIN

A

A

CONTROL PART

Symbol Parameter Conditions Ratings Unit

VD Supply Voltage

V

Input Voltage

CIN

VFO Fault Output Supply Voltage

IFO Fault Output Current

Applied between : V

Applied between : U

Applied between : U

Sink current at U

Fo, VFo, Fo terminals

UP1-VUPC

P-V

UPC

Fo-V

UPC

, V

VP1-VVPC,VN1-VNC

, VP-V

, VFo-V

, UN･VN-VNC

VPC

VPC

, Fo-VNC

20 V

20 V

20 V

20 mA

2

November. 2011

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B4L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

TOTAL SYSTEM

Symbol Parameter Conditions Ratings Unit

V

CC(PROT)

V

CC(surge)

T

Storage Temperature

stg

V

Isolation Voltage

isol

*: TC measurement point is just under the chip.

Supply Voltage Protected by
SC

Supply Voltage (Surge)

V

=13.5V ~ 16.5V

D

Inverter Part, T

=+125°C Start

j

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS

450 V

500 V

-40 ~ +125 °C

2500 V

THERMAL RESISTANCE

Symbol Parameter Conditions

R

th(j-c)Q

R

th(j-c)D

R

th(c-s)

Note.1: If you use this value, R

Thermal Resistance

Junction to case, IGBT (per 1 element) (Note.1) - - 0.62

Contact Thermal Resistance

should be measured just under the chips.

th(s-a)

Junction to case, FWDi (per 1 element) (Note.1) - - 1.06

Case to heat sink, (per 1 module)
Thermal grease applied (Note.1)

Min. Typ. Max.

Limits

- 0.06 -

Unit

K/W

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Conditions

V

CEsat

Collector-Emitter Saturation
Voltage

VEC Emitter-Collector Voltage IE=75A, VD=15V, V

ton

trr

t

c(on)

t

off

t

c(off)

I

CES

Switching Time

Collector-Emitter Cut-off
Current

V

=15V, IC=75A

D

V

=0V, Pulsed (Fig. 1)

CIN

= 15V (Fig. 2)

CIN

V

=15V, V

D

V

=300V, IC=75A

CC

T

=125°C

j

=0V←→15V

CIN

Inductive Load (Fig. 3,4)

V

CE=VCES

, VD=15V , V

=15V (Fig. 5)

CIN

Tj=25°C

=125°C

T

j

Tj=25°C

T

=125°C

j

Limits

Min. Typ. Max.

- 2.2 2.7

- 2.2 2.7

- 2.4 3.3

0.1 0.5 1.2

- 0.1 0.2

- 0.15 0.3

- 1.1 2.0

- 0.2 0.4

- - 1

- - 10

Unit

V

V

s

mA

3

November. 2011