MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
APPLICATION
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT
b) Error output signal is possible from all
each protection upper and lower IGBT
c) The mounting surface is 90mm×50mm
about 30% less than B4LA type
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
chip
Photo voltaic power conditioner
PACKAGE OUTLINES Dimensions in mm
Terminal code
1. VUPC
2. UFo
3. UP
UP1
4. V
5. VVPC
6. VFo
P
7. V
8. VVP1
9. NC
10. NC
11. NC
12
13. VNC
14. V
. NC
N1
15. NC
16. UN
17. VN
18. NC
19. Fo
1
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
V
P
NC Fo
1.5k
V
NC
NC
V
N1
V
N
U
N
NC NC NC NC V
VPC
VP1
V
Fo
1.5k
U
V
P
V
UPC
UP1
U
Fo
1.5k
VccFoINGND
VccFoINGND
VccFoINGND
VccFoINGND
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
PUVWNB
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
IC T
I
CRM
P
Total Power Dissipation TC=25°C 201 W
tot
Collector Current
=25°C 75
C
Pulse 150
IE Emitter Current TC=25°C 75
I
(Free wheeling Diode Forward current) Pulse 150
ERM
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
=15V 600 V
CIN
A
A
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage
V
Input Voltage
CIN
VFO Fault Output Supply Voltage
IFO Fault Output Current
Applied between : V
Applied between : U
Applied between : U
Sink current at U
Fo, VFo, Fo terminals
UP1-VUPC
P-V
UPC
Fo-V
UPC
, V
VP1-VVPC,VN1-VNC
, VP-V
, VFo-V
, UN･VN-VNC
VPC
VPC
, Fo-VNC
20 V
20 V
20 V
20 mA
2
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
T
Storage Temperature
stg
V
Isolation Voltage
isol
*: TC measurement point is just under the chip.
Supply Voltage Protected by
SC
Supply Voltage (Surge)
V
=13.5V ~ 16.5V
D
Inverter Part, T
=+125°C Start
j
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
450 V
500 V
-40 ~ +125 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Note.1: If you use this value, R
Thermal Resistance
Junction to case, IGBT (per 1 element) (Note.1) - - 0.62
Contact Thermal Resistance
should be measured just under the chips.
th(s-a)
Junction to case, FWDi (per 1 element) (Note.1) - - 1.06
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1)
Min. Typ. Max.
Limits
- 0.06 -
Unit
K/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
V
CEsat
Collector-Emitter Saturation
Voltage
VEC Emitter-Collector Voltage IE=75A, VD=15V, V
ton
trr
t
c(on)
t
off
t
c(off)
I
CES
Switching Time
Collector-Emitter Cut-off
Current
V
=15V, IC=75A
D
V
=0V, Pulsed (Fig. 1)
CIN
= 15V (Fig. 2)
CIN
V
=15V, V
D
V
=300V, IC=75A
CC
T
=125°C
j
=0V←→15V
CIN
Inductive Load (Fig. 3,4)
V
CE=VCES
, VD=15V , V
=15V (Fig. 5)
CIN
Tj=25°C
=125°C
T
j
Tj=25°C
T
=125°C
j
Limits
Min. Typ. Max.
- 2.2 2.7
- 2.2 2.7
- 2.4 3.3
0.1 0.5 1.2
- 0.1 0.2
- 0.15 0.3
- 1.1 2.0
- 0.2 0.4
- - 1
- - 10
Unit
V
V
s
mA
3
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Symbol Parameter Conditions
ID Circuit Current VD=15V, V
V
Input ON Threshold Voltage 1.2 1.5 1.8
th(ON)
V
Input OFF Threshold Voltage
th(OFF)
Applied between :
CIN
=15V
U
P-V
, VP-V
UPC
VN1-VNC - 6.5 12
V
, UN･VN-VNC
VPC
- 1.6 4.0
*P1-V*PC
Min. Typ. Max.
1.7 2.0 2.3
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 112 - - A
t
off(SC)
OT Trip level 135 - -
OT
(hys)
UVt Trip level 11.5 12.0 12.5
UVr
I
FO(H)
I
FO(L)
Short Circuit Current Delay
Time
Over Temperature Protection Detect Temperature of IGBT chip
Supply Circuit Under-Voltage
Protection
- - 0.01
Fault Output Current V
V
=15V (Fig. 3, 6) - 0.2 - s
D
Hysteresis - 20 -
-20≤Tj≤125°C
=15V, VFO=15V (Note.2)
D
Reset level - 12.5 -
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
Limits
- 10 15
Unit
mA
V
°C
V
mA
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol Parameter Conditions
Min. Typ. Max.
Ms Mounting Torque Mounting part screw : M4 1.4 1.65 1.9 N・m
m Weight - - 135 - g
Limits
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across P-N terminals ≤ 450 V
VD Control Supply Voltage
V
Input ON Voltage ≤ 0.8
CIN(ON)
V
Input OFF Voltage
CIN(OFF)
f
PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
PWM
t
dead
Arm Shoot-through Blocking
Time
Applied between : V
V
Applied between :
U
For IPM’s each input signals (Fig. 7)
IO Module Operating Current RMS ≤ 30 A
Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
,
UP1-VUPC
VP1-VVPC,VN1-VNC
P-V
, VP-V
UPC
VPC
(Note.3)
, UN･VN-VNC
15.0±1.5 V
≥ 9.0
≥ 2.0 s
Unit
V
4
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above V
(These test should not be done by using a curve tracer or its equivalent.)
Fo
Vcin
VD(all)
VD(all)
VD(all)
Vcc
Fo
Fo
IN
Vcin
Vcc
Fo
Fo
IN
Vcin
GND
GND
rating of the device.
CES
Vcc
Fo
IN
GND
Fig. 1 V
P
U,V
N
Ic
Vcc
VD(all)
VD(all)
CEsat
Test
U,V,(N)
Vcc
Fo
Fo
IN
Vcin
Vcc
Fo
Fo
IN
Vcin
P,(U ,V)
GND
GND
Vcc
Fo
V
Ic
VD(all)
Fo
Vcin
IN
GND
U,V,(N)
P,(U ,V)
V
I
E
Fig. 2 VEC Te st
P
U,V
Vcc
N
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
P,(U ,V)
A
V
CE
puls e
VD(all)
Fo
Vcin
Vcc
Fo
IN
GND
CES
Test
U,V,(N)
Fig. 6 SC test waveform
Fig. 5 I
Fig. 7 Dead time measurement point example
5
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
A
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
VD1
20k
≥0.1µ
≥10µ
V
UP1
U
Fo
U
P
V
UPC
1.5k
OUT
Vcc
OT
Fo
SC
IN
GND GN D
P
U
VD2
20k
≥0.1µ
20k
≥0.1µ
20k
≥0.1µ
≥10µ
≥10µ
≥10µ
U
V
V
V
V
V
V
NC
NC
NC
NC
VP1
Fo
P
VPC
N
N
N1
1.5k
Vcc
Fo
IN
GND GN D
Vcc
Fo
IN
GND GN D
Vcc
Fo
IN
GND GN D
OUT
OT
SC
OUT
OT
SC
OUT
OT
SC
C Output
V
N
VD3
NC
V
Fo
NC
NC
1.5k
B
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: t
PLH
, t
≤ 0.8μs, Use High CMR type.
PHL
• Slow switching opto-coupler: CTR > 100%
• Use 3 isolated control power supplies (V
). Also, care should be taken to minimize the instantaneous voltage charge of the
D
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
6
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
j
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
INVERTER PART
80
Tj=25°C
70
60
(A)
C
50
40
30
20
COLLECTOR CURRENT I
10
0
0.5 1. 0 1.5 2.0 2.5
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
INVERTER PART
2.5
(V)
CEsat
2.0
(TYPICAL)
VD=17V
) CHARACTERISTICS
D
(TYPICAL)
VD=13V
VD=15V
(V)
CE
PM75B4L1C060
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
INVERTER PART
2.5
2.0
(V)
CEsat
1.5
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0.0
0 1020304050607080
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
INVERTER PART
80
VD=15V
70
60
(A)
E
50
Tj=25°C
=125°C
T
VD=15V
FLAT-BASE TYPE
Tj=25°C
Tj=125°C
40
1.5
COLLECTO R-EMITTER
Ic=75A
Tj=25°C
Tj=125°C
SATURATION VOLTAGE V
1.0
12 13 14 15 16 17 18
CONTROL VOLTAGE V
(V) EMITTER-COLLECTOR VOLTAGE VEC (V)
D
30
20
EMITTER CURRENT I
10
0
00.511.522.5
7
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
SWITCHING TIME (t
10
Vcc=300V
VD=15V
(μs)
off
, t
on
Inductive Load
1
SWITCHING TIME t
0.1
1 10 100
COLLECTOR CURRENT I
SWITCHING ENERGY CHARACTERISTICS
1.6
Vcc=300V
1.4
VD=15V
1.2
(mJ/pulse)
off
1.0
, E
on
0.8
0.6
0.4
0.2
SWITCHING ENERGY E
0.0
Tj=25°C
Tj=125°C
Inductive Load
0 20406080
COLLECTOR CURRENT I
on
(TYPICAL)
INVERTER PART
Tj=25°C
Tj=125°C
toff
ton
(TYPICAL)
INVERTER PART
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
, t
) CHARACTERISTICS
off
(A) COLLECTOR CURRENT IC (A)
C
Eoff
Eon
(A)
C
SWITCHING TIME (t
(μs)
c(off)
, t
c(on)
0.1
SWITCHING TIME t
0.01
REVERSE RECOVERY CHARACTERISTICS
0.20
0.18
(μs)
rr
0.16
0.14
0.12
0.10
0.08
REVERSE RECOVERY TIME t
0.06
, t
) CHARACTERISTICS
c(on)
c(off)
(TYPICAL)
INVERTER PART
1
tc(off)
tc(on)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
110100
FREE WHEELING DIODE
(TYPICAL)
INVERTER PART
80
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
0 20406080
70
Irr
60
50
40
30
trr
20
10
EMITTER CURRENT IE (A)
(A)
rr
REVERSE RECOVERY CURRENT I
8
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
REVERSE RECOVERY ENERGY CHARACTERISTICS
1.4
1.2
(mJ/pulse)
rr
1.0
0.8
0.6
0.4
0.2
0.0
REVESE RECOVERY ENERGY E
EMITTER CURRENT I
UV TRIP LEVEL VS. T
20
18
16
14
12
(V)
r
10
/ UV
t
8
UV
6
4
2
0
-50 0 50 100 150
T
FREE WHEELING DIODE
(TYPICAL)
INVERTER PART
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
0 20406080
(TYPICAL)
UVt
UVr
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
I
VS. fc CHARACTERISTICS
D
30
VD=15V
25
20
15
(mA)
D
I
10
5
0
0 5 10 15 20 25
(A) fc (kHz)
E
Tj=25°C
Tj=125°C
CHARACTERISTICS
j
(°C) Tj (°C)
j
SC TRIP LEVEL VS. T
2.0
1.8
1.6
1.4
1.2
1.0
SC
0.8
=25°C is normalized 1)
j
0.6
0.4
(SC of T
0.2
0.0
-50 0 50 100 150
INVERTER PART
VD=15V
(TYPICAL)
CHARACTERISTICS
j
(TYPICAL)
N side
P side
9
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
TRANSIENT THERMAL
th(j-c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
IMPEDANCE CHARACTERISTICS
INVERTER PART
1
0.1
0.01
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.62 K/W
FWDi Part;
Per unit base: Rth(j-c)D=1.06K/W
PM75B4L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME t (sec)
10
November. 2011
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