MITSUBISHI <INTELLIGENT POWER MODULES>
PM450DV1A120
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT
b) The over-temperature protection which
detects the chip surface temperature of
CSTBT
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
chip
TM
is adopted.
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
1
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
INTERNAL FUNCTIONS BLOCK DIAGRAM
VCC
IN
Fo
GND
VCC
IN
Fo
GND
V
V
C
F
NC
V
V
C
F
NC
P1
PI
PO
PC
N1
NI
NO
NC
TjA
TjK
OUT
SINK
SC
TjA
TjK
OUT
SINK
SC
AMP
AMP
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
C1
IGBT F WDi
C2E1
IG B T
FWDi
E2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
IC T
I
CRM
P
Total Power Dissipation TC=25°C 2232 W
tot
IE Emitter Current TC=25°C 450
I
ERM
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
Collector Current
(Free wheeling Diode Forward current) Pulse 900
=25°C 450
C
Pulse 900
=15V 1200 V
CIN
A
A
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage
V
Input Voltage
CIN
VFO Fault Output Supply Voltage
IFO Fault Output Current
Applied between : V
Applied between : C
Applied between : F
Sink current at F
PO
, VN1-VNC
P1-VPC
, CNI-VNC
PI-VPC
, FNO-VNC
PO-VPC
, FNO terminals
20 V
20 V
20 V
20 mA
2
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
TC
T
Storage Temperature
stg
V
Isolation Voltage
isol
*: TC measurement point is just under the chip.
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module case operating
temperature
V
=13.5V ~ 16.5V
D
Inverter Part, T
=+125°C Start
j
Applied between : C1-E2, Surge value
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
800 V
1000 V
-20 ~ +100 °C
-40 ~ +125 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Note1: If you use this value, R
Thermal Resistance
Junction to case, IGBT (per 1 element) (Note.1) - - 0.056
Contact Thermal Resistance
should be measured just under the chips.
th(s-a)
Junction to case, FWDi (per 1 element) (Note.1) - - 0.079
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1)
Min. Typ. Max.
Limits
- 0.018 -
Unit
K/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
V
CEsat
Collector-Emitter Saturation
Voltage
VEC Emitter-Collector Voltage IE=450A, VD=15V, V
ton
trr
t
c(on)
t
off
t
c(off)
I
CES
Switching Time
Collector-Emitter Cut-off
Current
V
=15V, IC=450A
D
V
=0V, Pulsed (Fig. 1)
CIN
= 15V (Fig. 2)
CIN
V
=15V, V
D
V
=600V, IC=450A
CC
T
=125°C
j
=0V←→15V
CIN
Inductive Load (Fig. 3,4)
V
CE=VCES
, VD=15V , V
=15V (Fig. 5)
CIN
3
Tj=25°C
=125°C
T
j
Tj=25°C
T
=125°C
j
Limits
Min. Typ. Max.
- 1.65 2.15
- 1.85 2.35
- 2.3 3.3
0.3 0.8 2.0
- 0.3 0.8
- 0.4 1.0
- 2.4 3.3
- 0.4 1.2
- - 1
- - 10
Unit
V
V
s
mA
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Symbol Parameter Conditions
ID Circuit Current VD=15V, V
V
Input ON Threshold Voltage 1.2 1.5 1.8
th(ON)
V
Input OFF Threshold Voltage
th(OFF)
Applied between : C
CIN
=15V
PI-VPC
, CNI-VNC
VP1-VPC - 2 4
V
- 2 4
N1-VNC
Min. Typ. Max.
1.7 2.0 2.3
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 675 - - A
t
off(SC)
OT Trip level 135 - -
OT
(hys)
UV Trip level 11.5 12.0 12.5
UVr
I
FO(H)
I
FO(L)
Short Circuit Current Delay
Time
Over Temperature Protection Detect Temperature of IGBT chip
Supply Circuit Under-Voltage
Protection
- - 0.01
Fault Output Current V
V
=15V (Fig. 3, 6) - 0.2 - s
D
Hysteresis - 20 -
-20≤Tj≤125°C
=15V, VFO=15V (Note.2)
D
Reset level - 12.5 -
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
Limits
- 10 15
Unit
mA
V
°C
V
mA
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol Parameter Conditions
Ms Mounting part screw : M6 3.92 4.90 5.88
Mt
Mounting Torque
Main terminal part screw : M6 3.92 4.90 5.88
Min. Typ. Max.
m Weight - - 510 - g
Limits
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across C1-E2 terminals ≤ 800 V
VD Control Supply Voltage
V
Input ON Voltage ≤ 0.8
CIN(ON)
V
Input OFF Voltage
CIN(OFF)
f
PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
PWM
t
dead
Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
Arm Shoot-through Blocking
Time
Applied between : V
Applied between : C
For IPM’s each input signals (Fig. 7)
, VN1-V
P1-VPC
NC
(Note.3)
, CNI-VNC
PI-VPC
15.0±1.5 V
≥ 4.0
≥ 3.5 s
Unit
N・m
V
4
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
A
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above V
(These test should not be done by using a curve tracer or its equivalent.)
NC
V
*1
F
V
D
NC
V
P1
F
V
V
PO
D1
C
PI
V
PC
NC
V
N1
F
NO
D2
C
NI
V
NC
*O
C
*I
V
*C
rating of the device.
CES
Fig. 1 V
CEsat
C1
V
D1
Vcc
E1C2
E2
V
D2
Ic
E1(E2)
Tes t
C1(C2)
V
NC
V
P1
F
PO
C
PI
V
PC
NC
V
N1
F
NO
C
NI
V
NC
NC
V
*1
F
V
Ic
D
*O
C
*I
V
*C
C1(C2)
E1(E2)
V
I
E
-Ic
Fig. 2 VEC Tes t
C1
E1C2
Vcc
E2
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
NC
V
*1
F
V
D
*O
C
*I
V
*C
Fig. 5 I
CES
Tes t
C1(C2)
E1(E2)
pulse
VCE
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example
5
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
+
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
VD1
V
20k
≥10µ
IF
≥0.1µ
P1
F
PO
C
PI
V
PC
Vcc
OUT
OT
Fo
SC
IN
GND
C1
Vcc
-
E1C2 (U)
V
N1
F
NO
C
NI
V
NC
Vcc
OUT
OT
Fo
SC
IN
GND
E2
VD2
20k
≥10µ
IF
≥0.1µ
VD3
20k
≥10µ
IF
≥0.1µ
V
P1
F
PO
C
PI
V
PC
Vcc
OUT
OT
Fo
SC
IN
GND
C1
E1C2 (V)
M
V
N1
F
NO
C
NI
V
NC
VccINOUT
Fo
GND
OT
SC
E2
VD4
≥10µ
20k
IF
≥0.1µ
C1
E1C2 (W)
VD5
20k
≥10µ
IF
≥0.1µ
V
P1
F
PO
C
PI
V
PC
OUT
Vcc
OT
Fo
SC
IN
GND
20k
≥10µ
VD6
IF
≥0.1µ
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: t
PLH
, t
≤ 0.8μs, Use High CMR type.
PHL
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (V
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and
E2 terminal.
V
N1
F
NO
C
NI
V
NC
Vcc
OUT
OT
Fo
SC
IN
GND
E2
Fig. 8 Application Example Circuit
). Also, care should be taken to minimize the instantaneous voltage charge of the
D
6
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
j
j
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
500
450
400
(A)
C
350
300
250
200
150
100
COLLECTOR CURRENT I
50
0
0.5 1.0 1.5 2.0
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
2.5
Ic=450A
(V)
CEsat
2.0
1.5
COLLECTO R-EMITTER
SATURATION VOLTAGE V
1.0
12 13 14 15 16 17 18
CONTROL VOLTAGE V
(TYPICAL)
Tj=25°C
VD=17V
) CHARACTERISTICS
D
(TYPICAL)
Tj=25°C
T
=125°C
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
2.5
(V)
2
CEsat
VD=13V
VD=15V
(V)
CE
(V) EMITTER-COLLECTOR VOLTAGE VEC (V)
D
7
1.5
1
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0.5
0
0 50 100 150 200 250 300 350 400 450 500
COLLECTOR CURRENT IC (A)
VD=15V
Tj=25°C
Tj=125°C
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
500
450
400
(A)
350
E
300
250
200
150
100
EMITTER CURRENT I
VD=15V
Tj=25°C
=125°C
T
50
0
00.511.522.53
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
0
SWITCHING TIME (t
10.0
toff
(μs)
off
, t
on
1.0
SWITCHING TIME t
0.1
10 100 100
COLLECTOR CURRENT I
SWITCHING ENERGY CHARACTERISTICS
60
Vcc=600V
VD=15V
(mJ/pulse)
off
, E
on
50
40
30
20
Tj=25°C
Tj=125°C
Inductive Load
on
(TYPICAL)
ton
(TYPICAL)
, t
) CHARACTERISTICS
off
Vcc=600V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
(A) COLLECTOR CURRENT IC (A)
C
Eon
Eoff
PM450DV1A120
SWITCHING TIME (t
10
(μs)
c(off)
1
, t
c(on)
tc(on)
0.1
SWITCHING TIME t
0.01
10 100 1000
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
0.6
Vcc=600V
VD=15V
0.5
(μs)
rr
0.4
0.3
0.2
Tj=25°C
Tj=125°C
Inductive Load
c(on)
(TYPICAL)
tc(off)
(TYPICAL)
, t
) CHARACTERISTICS
c(off)
FLAT-BASE TYPE
INSULATED PACKAGE
Vcc=600V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
300
(A)
rr
250
200
Irr
150
100
trr
10
0.1
50
REVERSE RECOVERY TIME t
SWITCHING ENERGY E
0
0 100 200 300 400 500
COLLECTOR CURRENT I
(A)
C
0
0 100 200 300 400 500
EMITTER CURRENT IE (A)
REVERSE RECOVERY CURRENT I
0
8
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
0
j
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
REVERSE RECOVERY ENERGY CHARACTERISTICS
35
30
(mJ/pulse)
rr
25
20
15
10
5
FREE WHEELING DIODE
(TYPICAL)
Vcc=600V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
120
100
(mA)
D
I
I
VS. fc CHARACTERISTICS
D
(TYPICAL)
VD=15V
Tj=25°C
T
=125°C
80
60
40
20
0
REVESE RECOVERY ENERGY E
0 100 200 300 400 500
EMITTER CURRENT I
UV TRIP LEVEL VS. T
(TYPICAL)
20
18
16
14
12
(V)
r
10
/ UV
t
8
UV
6
4
2
0
-50 0 50 100 150
UVt
UVr
T
0
0 5 10 15 20 25
(A) fc (kHz)
E
CHARACTERISTICS
j
(°C) Tj (°C)
j
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
2
1.8
VD=15V
1.6
1.4
1.2
1
SC
0.8
=25°C is normalized 1)
j
0.6
0.4
(SC of T
0.2
0
-50 0 50 100 15
9
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
TRANSIENT THERMAL
th(j-c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
IMPEDANCE CHARACTERISTICS
1
0.1
0.01
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.056 K/W
FWDi Part;
Per unit base: Rth(j-c)D=0.079 K/W
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME t (sec)
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
10
November. 2011
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