Mitsubishi Electric US, Inc PM450DV1A120 Data Sheet
MITSUBISHI <INTELLIGENT POWER MODULES>
PM450DV1A120
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT
b) The over-temperature protection which
detects the chip surface temperature of
CSTBT
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
chip
TM
is adopted.
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
1
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
INTERNAL FUNCTIONS BLOCK DIAGRAM
VCC
IN
Fo
GND
VCC
IN
Fo
GND
V
V
C
F
NC
V
V
C
F
NC
P1
PI
PO
PC
N1
NI
NO
NC
TjA
TjK
OUT
SINK
SC
TjA
TjK
OUT
SINK
SC
AMP
AMP
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
C1
IGBT F WDi
C2E1
IG B T
FWDi
E2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15V, V
CES
IC T
I
CRM
P
Total Power Dissipation TC=25°C 2232 W
tot
IE Emitter Current TC=25°C 450
I
ERM
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
Collector Current
(Free wheeling Diode Forward current) Pulse 900
=25°C 450
C
Pulse 900
=15V 1200 V
CIN
A
A
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage
V
Input Voltage
CIN
VFO Fault Output Supply Voltage
IFO Fault Output Current
Applied between : V
Applied between : C
Applied between : F
Sink current at F
PO
, VN1-VNC
P1-VPC
, CNI-VNC
PI-VPC
, FNO-VNC
PO-VPC
, FNO terminals
20 V
20 V
20 V
20 mA
2
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM450DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
TC
T
Storage Temperature
stg
V
Isolation Voltage
isol
*: TC measurement point is just under the chip.
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module case operating
temperature
V
=13.5V ~ 16.5V
D
Inverter Part, T
=+125°C Start
j
Applied between : C1-E2, Surge value
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
800 V
1000 V
-20 ~ +100 °C
-40 ~ +125 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Note1: If you use this value, R
Thermal Resistance
Junction to case, IGBT (per 1 element) (Note.1) - - 0.056
Contact Thermal Resistance
should be measured just under the chips.
th(s-a)
Junction to case, FWDi (per 1 element) (Note.1) - - 0.079
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1)
Min. Typ. Max.
Limits
- 0.018 -
Unit
K/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
V
CEsat
Collector-Emitter Saturation
Voltage
VEC Emitter-Collector Voltage IE=450A, VD=15V, V
ton
trr
t
c(on)
t
off
t
c(off)
I
CES
Switching Time
Collector-Emitter Cut-off
Current
V
=15V, IC=450A
D
V
=0V, Pulsed (Fig. 1)
CIN
= 15V (Fig. 2)
CIN
V
=15V, V
D
V
=600V, IC=450A
CC
T
=125°C
j
=0V←→15V
CIN
Inductive Load (Fig. 3,4)
V
CE=VCES
, VD=15V , V
=15V (Fig. 5)
CIN
3
Tj=25°C
=125°C
T
j
Tj=25°C
T
=125°C
j
Limits
Min. Typ. Max.
- 1.65 2.15
- 1.85 2.35
- 2.3 3.3
0.3 0.8 2.0
- 0.3 0.8
- 0.4 1.0
- 2.4 3.3
- 0.4 1.2
- - 1
- - 10
Unit
V
V
s
mA
November. 2011
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