Mitsubishi Electric US, Inc PM100RSD060 Data Sheet

MITSUBISHI <INTELLIGENT POWER MODULES>

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

PM100RSD060

APPLICATION

General purpose inverter, servo drives and other motor controls

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.
For example, typical V

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.

•3φ 100A, 600V Current-sense IGBT for 15kHz switching

• 30A, 600V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over­current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)

• Acoustic noise-less 11kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

PM100RSD060

FLAT-BASE TYPE

FLAT-BASE TYPE

INSULATED PACKAGE

INSULATED PACKAGE

CE(sat)=1.7V

File No.E80271

PACKAGE OUTLINES Dimensions in mm

110

17

2020

17.5

32.6

±0.5

2

31.6

17.02

3.22

BPN

0.5

A

±1

95

±0.5

3-2

10

12

WVU

±0.3

24.5

10

78654321

10

66.44

19- 0.5

3-23-2

9

6-2

10

11

13

10

14

12

2626

LABEL

4-φ5.5

MOUNTING HOLES

PBT

1918171615

±1

±0.5

89

74

4-R6

6-M5NUTS

2-φ2.54

22

19.4

4

21.2

22

+1.0
–0.5

Screwing depth
Min9.0

Terminal code

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

φ2.54

3.22

11.61.6

11. WP

12. VWP1

13. VNC

14. VN1

15. Br

16. UN

17. VN

18. WN

19. Fo

3-2

A : DETAIL

4.5

0.5

10.6

Jul. 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

INSULATED PACKAGE

Rfo=1.5kΩ

WPV

WP1

VPV

VP1

U

P

V

Br Fo

Gnd In Fo Vcc

Gnd

Si Out

WNV

V

NC

Gnd In Fo Vcc

Gnd

Si Out

N1

V

Gnd In Fo Vcc

Gnd

N

Si Out

U

Gnd In Fo Vcc

Gnd

Th

N

Si Out

V

WPC

Gnd In Fo Vcc

Gnd

W

FO

V

VPC

Gnd In Fo Vcc

Si Out

Gnd

V

FO

V

UPC

Gnd In Fo Vcc

Si Out

Gnd

U

Si Out

UP1

FO

RfoRfo RfoRfo

BNWVPU

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C

600
100
200
328

–20 ~ +150

V
A
A

W
°C

BRAKE PART

Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
VR(DC)
IF
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C

T

C = 25°C

T

C = 25°C

600

30

60
176
600

30

–20 ~ +150

CONTROL PART

Symbol

VD

VCIN

V

FO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Parameter Condition Ratings Unit

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN • Br-VNC

FO-VNC

20

20

20

20

Jul. 2005

V
A
A

W

V
A

°C

V

V

V

mA

TOTAL SYSTEM

Symbol

V

CC(PROT)

V

CC(surge)

TC

Tstg
Viso

Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature

Isolation Voltage

Parameter

V

D = 13.5 ~ 16.5V, Inverter Part,

j = 125°C Start

T

Applied between : P-N, Surge value or without switching

(Note-1)

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)

PBT

BPN

Condition

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

INSULATED PACKAGE

Ratings

400

500

–20 ~ +100

–40 ~ +125

2500

Unit

V

V

°C
°C

V

rms

WVU

65mm

Tc

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part, (Note-1)
Brake FWDi part, (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part, (Note-2)
Brake FWDi part, (Note-2)
Case to fin, Thermal grease applied (per 1 module)

(Note-2) TC measurement point is just under the chips.

If you use this value, R

th(f-a) should be measured just under the chips.

Test Condition

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

CIN

= 15V

Test Condition

(Fig. 4)

Symbol

CE(sat)

V

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter
Saturation Voltage
FWDi Forward Voltage

Switching Time

Collector-Emitter
Cutoff Current

D = 15V, IC = 100A

V
V

CIN = 0V, Pulsed (Fig. 1)

–I

C = 100A, VD = 15V, VCIN = 15V (Fig. 2)

D = 15V, VCIN = 15V↔0V

V
V

CC = 300V, IC = 100A

T

j = 125°C

Inductive Load (upper and lower arm) (Fig. 3)

VCE = V

CES

, V

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

Limits

Min. Typ. Max.

—
—
—
—
—
—
—
—
—

—

—

—

—

—

—

—

—

—

0.38

0.70

0.71

1.66

0.23

0.36

0.45

0.96

0.027

Limits

Min. Typ. Max.

—
—
—

0.8

—
—
—
—
—
—

1.7

1.7

2.2

1.2

0.15

0.4

2.4

0.6

—

—

2.3

2.3

3.3

2.4

0.3

1.0

3.3

1.2

10

Unit

°C/W

Unit

V

V

µs

1

mA

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

BRAKE PART

Symbol

VCE(sat)

VFM

ICES

Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current

Parameter

VD = 15V, IC = 30A
V

CIN = 0V, Pulsed (Fig. 1)

I

F = 30A (Fig. 2)

VCE = V

CES

, V

CONTROL PART

Symbol

ID

V

th(ON)

Vth(OFF)

OC

SC

off(OC)

t
OT
OT
UV
UV
IFO(H)
IFO(L)

tFO

Circuit Current

Input ON Threshold Voltage
Input OFF Threshold Voltage

Over Current Trip Level

Short Circuit Trip Level

Over Current Delay Time

Over Temperature Protection

r

Supply Circuit Under-Voltage
Protection

r

Fault Output Current

Minimum Fault Output Pulse
Width

(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.

Fault output of OC, SC and UV protection operate by upper and lower arms.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.

Parameter

D = 15V, VCIN = 15V

V

Applied between : U

Inverter part
V

D = 15V (Fig. 5,6)

Break part
–20 ≤ T

j ≤ 125°C, VD = 15V (Fig. 5,6)
j ≤ 125°C, VD = 15V (Fig. 5,6)

–20≤ T

V

D = 15V (Fig. 5,6)

Base-plate
Temperature detection, V

–20 ≤ T

j ≤ 125°C

D = 15V, VFO = 15V (Note-3)

V

D = 15V (Note-3)

V

Test Condition

CIN

= 15V

(Fig. 4)

Test Condition

P-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN • Br-VNC

D = 15V

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

VN1-VNC
VXP1-VXPC

Tj = –20°C
T

j = 25°C

T

j = 125°C

Inverter part
Brake part

Trip level
Reset level
Trip level
Reset level

PM100RSD060

FLAT-BASE TYPE

INSULATED PACKAGE

Limits

Min. Typ. Max.

39

1.8

1.9

2.5

—

—

Limits

44
13

1.5

2.0

—

311

—

53

360

79

10
118
100

12.0

12.5

—

10

1.8

2.5

2.6

3.5
1

10

Max.

60
18

1.8

2.3
520
430

—

—

—
—
—

125

—

12.5

—

0.01
15

—

—
—
—
—
—

Min. Typ.

—
—

1.2

1.7

—

264
158

—
—
—

111

—

11.5

—
—
—

1.0

Unit

V

V

mA

Unit

mA

V

A

A

µs

°C

V

mA

ms

MECHANICAL RATINGS AND CHARACTERISTICS

Symbol

—
—
—

Parameter

Mounting torque
Mounting torque
Weight

Main terminal screw : M5
Mounting part screw : M5

Test Condition

—

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter

VCC

VD

VCIN(ON)
VCIN(OFF)

fPWM

tdead

Supply Voltage

Control Supply Voltage

Input ON Voltage
Input OFF Voltage

PWM Input Frequency

Arm Shoot-through
Blocking Time

Applied across P-N terminals
Applied between : V

Applied between : U

Using Application Circuit input signal of IPM, 3φ
sinusoidal PWM VVVF inverter (Fig. 8)

For IPM’s each input signals (Fig. 7)

(Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2V

Test Condition

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC (Note-4)

P-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN • Br-VNC

p-p

Limits

Min.

2.5

2.5

Typ.

3.0

3.0

—

560

Recommended value

≤ 400

15 ± 1.5

≤ 0.8
≥ 4.0

≤ 20

≥ 2.5

Max.

3.5

3.5

—

Unit

N • m
N • m

g

Unit

V

V

V

kHz

µs

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before appling any control supply voltage (V
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above V

CES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

D), the input terminals should be pulled up by resistores, etc. to their corre-

P, (U,V,W,B)

P, (U,V,W)

IN

V

(0V)

CIN

Fo

D

(all)

V

Fig. 1 V

a) Lower Arm Switching

Signal input

V

CIN

(Upper Arm)

(15V)

V

Signal input

CIN

(Lower Arm)

b) Upper Arm Switching

CIN

V

(15V)

CIN

Signal input

(Upper Arm)

Signal input

(Lower Arm)

IN
Fo

V

D

(all)

V

CIN

(15V)

V

Fig. 4 I

IN

CIN

V

Fo

VD (all)

Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform

IN

V V

Ic

V

(15V)

CIN

U,V,W, (N) U,V,W,B, (N)

CE(sat)

Test

P

Fo

U,V,W

Fo

V

D

(all)

Fo

V

D

(all)

N

P

Fo

U,V,W

N

Vcc

C

S

Ic

Vcc

C

S

Ic

Fo

VD (all)

Fig. 2 V

EC

90%

10%

V

CIN

(ton= td (on) + tr) (toff= td (off) + tf)

Fig. 3 Switching time Test circuit and waveform

P, (U,V,W,B)

U,V,W, (N)

CES

P, (U,V,W,B)

U,V,W, (N)

Test

A

Pulse

V

CE

I

C

CIN

V

I

C

toff (OC)

Short Circuit Current

V

CC

I

C

P

, (VFM) Test

trr

Irr

10% 10%

tc (on) tc (off)

trtd (on)

Over Current

Constant Current

Constant Current

Ic

td (off)

–

Ic

CE

V

90%

10%

tf

OC

SC

V

D

V

CINP

V

D

CINN

V

V

CINP

0V

CINN

V

0V

t

dead

t

dead

U,V,W

N

Vcc

Ic

t

t

dead

t

Fig. 7 Dead time measurement point example

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

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VD

VD

VD

VD

≥10µ

20k

→

IF

≥0.1µ

20k

→

IF

≥0.1µ

20k

→

IF

≥0.1µ

20k

≥0.1µ

5V

→

IF

4.7k

1k

≥10µ

≥10µ

≥10µ

VUP1

UFO

UP

VUPC

VVP1

VFO

VP

VVPC

VWP1

WFO

WP

VWPC

UN

VN

VN1

WN

VNC

Br

Fo

Rfo

Rfo

Rfo

Rfo

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

GND

Vcc

Fo

In

GND

OUT

GNDGND

OUT

GNDGND

OUT

GNDGND

OUT

GNDGND

TEMP

OUT

GNDGND

OUT

GND

OUT

GND

Si

Si

Si

Si

Th

Si

Si

Si

P

+

–

U

V

W

N

B

M

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

•

stray capacity between the input and output wirings of opto-coupler.

Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module

•

should be shortened as much as possible to minimize the floating capacitance.
Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.

•

Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

•

power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

•

terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line

•

and improve noise immunity of the system.

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

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PERFORMANCE CURVES (Inverter Part)

OUTPUT CHARACTERISTICS

120

T

j

= 25°C

(A)

100

C

80

60

40

20

COLLECTOR CURRENT I

0

0

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. V

2

(V)

CE (sat)

1.5

1

0.5

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

1312 1514 1716

(TYPICAL)

VD = 17V

10.5 1.5 2

D

) CHARACTERISTICS

(TYPICAL)

IC = 100A
T
T

15V

13V

j

= 25°C

j

= 125°C

CE

18

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

2

(V)

CE (sat)

VD = 15V

1.5

1

0.5

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

20 40 60 80 100

0

COLLECTOR CURRENT IC (A)

SWITCHING TIME CHARACTERISTICS

1

10

VCC = 300V

7

V

D

5

T

4

T

3

Inductive load

2

0

10

7
5

4
3

2

= 15V

j

= 25°C

j

= 125°C

(µs)

c(off)

, t

c(on)

SWITCHING TIME t

–1

10

10

1

57

234 23 57

(TYPICAL)

(TYPICAL)

t

c(off)

t

c(on)

t

c(off)

2

10

T

j

= 25°C

j

= 125°C

T

4

10

3

CONTROL SUPPLY VOLTAGE VD (V)

SWITCHING TIME CHARACTERISTICS

1

10

7
5

(µs)

4

off

3

, t

on

2

0

10

7
5

4
3

2

SWITCHING TIME t

–1

10

1

10

23 23 57

(TYPICAL)

t

t

2

57

10

off

on

VCC = 300V
V
T
T
Inductive load

COLLECTOR CURRENT IC (A)

D

= 15V

j

= 25°C

j

= 125°C

44

10

COLLECTOR CURRENT I

C

(A)

SWITCHING LOSS CHARACTERISTICS

1

10

7

(mJ/pulse)

5
4

(off)

3

SW

2

, E

(on)

0

10

SW

7
5

4
3

2

–1

3

10

1

10

SWITCHING LOSS E

COLLECTOR CURRENT I

(TYPICAL)

E

SW

(off)

E

SW

(on)

VCC = 300V
V

D

= 15V

j

= 25°C

T
T

j

= 125°C

Inductive load

2

57

23 23 57

10

44

C

(A)

10

3

Jul. 2005

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PM100RSD060

FLAT-BASE TYPE

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DIODE FORWARD CHARACTERISTICS

(A)

2

10

C

I

VD = 15V

–

7
5

4
3

2

1

10

7

5
4

3

2

0

10

0

COLLECTOR RECOVERY CURRENT

(TYPICAL)

T

j

j

T

0.5 1 1.5 2 2.5

EMITTER-COLLECTOR VOLTAGE V

D

VS. fc CHARACTERISTICS

I

(TYPICAL)

100

VD = 15V
T

j

= 25°C

80

(mA)

D

60

40

20

CIRCUIT CURRENT I

0

5101520

CARRIER FREQUENCY fc (kHz)

= 25°C
= 125°C

EC

N-side

P-side

250

(V)

DIODE REVERSE RECOVERY CHARACTERISTICS

0

10

7

(µs)

rr

5
4

3

2

–1

10

7
5

4
3

2

REVERSE RECOVERY TIME t

–2

10

1

10

(TYPICAL)

I

rr

t

rr

257

4323574

10

2

VCC = 300V
V

D

= 15V

j

= 25°C

T
T

j

= 125°C

Inductive load

10

COLLECTOR RECOVERY CURRENT –I

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

7
5

3
2

th (j – c)

0

10

7
5

3
2

–1

10

7
5

3
2

–2

10

7

NORMALIZED TRANSIENT

5

Single Pulse

3

THERMAL IMPEDANCE Z

2

Per unit base = R

–3

10

–3

23 57

10

(IGBT PART)

–2

23 57

10

th(j – c)Q

–1

23 57

10

= 0.38°C/W

0

23 57

10

TIME (s)

C

10

2

10

(A)

rr

7
5

4
3

2

1

10

7
5

4
3

2

0

10

REVERSE RECOVERY CURRENT l

3

(A)

1

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

7
5

3
2

th (j – c)

0

10

7
5

3
2

–1

10

7
5

3
2

–2

10

7

NORMALIZED TRANSIENT

5

Single Pulse

3

THERMAL IMPEDANCE Z

2

Per unit base = R

–3

10

–3

23 57

10

(FWDi PART)

–2

23 57

10

TIME (s)

th(j – c)F

–1

23 57

10

= 0.70°C/W

0

23 57

10

10

1

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSD060

FLAT-BASE TYPE

INSULATED PACKAGE

PERFORMANCE CURVES (Brake Part)

OUTPUT CHARACTERISTICS

50

T

j

= 25°C

(A)

C

40

30

20

10

COLLECTOR CURRENT I

0

0

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. V

3

(V)

2.5

CE (sat)

2

(TYPICAL)

VD = 17V

10.5 1.5 2.52

D

) CHARACTERISTICS

(TYPICAL)

15V

13V

CE

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

2.5

(V)

2

CE (sat)

1.5

1

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

0

10 5020 30 40

COLLECTOR CURRENT IC (A)

DIODE FORWARD CHARACTERISTICS

(A)

2

10

C

7

VD = 15V

T

j

5
4

3

2

= 25°C

j

= 125°C

T

(TYPICAL)

VD = 15V

(TYPICAL)

T

j

= 25°C

T

j

= 125°C

1.5

1

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

1312 1514 1716

CONTROL SUPPLY VOLTAGE VD (V)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

7
5

3
2

th (j – c)

0

10

7
5

3
2

–1

10

7
5

3
2

–2

10

7

NORMALIZED TRANSIENT

5

Single Pulse

3

THERMAL IMPEDANCE Z

2

Per unit base = R

–3

10

–3

23 57

10

(IGBT PART)

–2

23 57

10

IC = 30A
T
T

th(j – c)Q

–1

23 57

10

j

= 25°C

j

= 125°C

= 0.71°C/W

0

23 57

10

18

10

1

10

7
5

4
3

2

0

10

0

COLLECTOR RECOVERY CURRENT –I

0.5 1 1.5 2 32.5

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

7
5

3
2

th (j – c)

0

10

7
5

3
2

–1

10

7
5

3
2

–2

10

7

NORMALIZED TRANSIENT

5

Single Pulse

3

THERMAL IMPEDANCE Z

2

Per unit base = R

–3

1

10

10

–3

23 57

(FWDi PART)

–2

23 57

10

th(j – c)F

–1

23 57

10

= 1.66°C/W

0

23 57

10

10

1

TIME (s)

TIME (s)

Jul. 2005