Mitsubishi Electric US, Inc PM100RSD060 Data Sheet
MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
PM100RSD060
APPLICATION
General purpose inverter, servo drives and other motor controls
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
•3φ 100A, 600V Current-sense IGBT for 15kHz switching
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
PM100RSD060
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
CE(sat)=1.7V
File No.E80271
PACKAGE OUTLINES Dimensions in mm
110
17
2020
17.5
32.6
±0.5
2
31.6
17.02
3.22
BPN
0.5
A
±1
95
±0.5
3-2
10
12
WVU
±0.3
24.5
10
78654321
10
66.44
19- 0.5
3-23-2
9
6-2
10
11
13
10
14
12
2626
LABEL
4-φ5.5
MOUNTING HOLES
PBT
1918171615
±1
±0.5
89
74
4-R6
6-M5NUTS
2-φ2.54
22
19.4
4
21.2
22
+1.0
–0.5
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
φ2.54
3.22
11.61.6
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
3-2
A : DETAIL
4.5
0.5
10.6
Jul. 2005
INTERNAL FUNCTIONS BLOCK DIAGRAM
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Rfo=1.5kΩ
WPV
WP1
VPV
VP1
U
P
V
Br Fo
Gnd In Fo Vcc
Gnd
Si Out
WNV
V
NC
Gnd In Fo Vcc
Gnd
Si Out
N1
V
Gnd In Fo Vcc
Gnd
N
Si Out
U
Gnd In Fo Vcc
Gnd
Th
N
Si Out
V
WPC
Gnd In Fo Vcc
Gnd
W
FO
V
VPC
Gnd In Fo Vcc
Si Out
Gnd
V
FO
V
UPC
Gnd In Fo Vcc
Si Out
Gnd
U
Si Out
UP1
FO
RfoRfo RfoRfo
BNWVPU
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D = 15V, VCIN = 15V
T
C = 25°C
T
C = 25°C
T
C = 25°C
600
100
200
328
–20 ~ +150
V
A
A
W
°C
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
VR(DC)
IF
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature
V
D = 15V, VCIN = 15V
T
C = 25°C
T
C = 25°C
T
C = 25°C
T
C = 25°C
T
C = 25°C
600
30
60
176
600
30
–20 ~ +150
CONTROL PART
Symbol
VD
VCIN
V
FO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Parameter Condition Ratings Unit
Applied between : V
Applied between : UP-VUPC, VP-VVPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
WP-VWPC, UN • VN • WN • Br-VNC
FO-VNC
20
20
20
20
Jul. 2005
V
A
A
W
V
A
°C
V
V
V
mA
TOTAL SYSTEM
Symbol
V
CC(PROT)
V
CC(surge)
TC
Tstg
Viso
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Parameter
V
D = 13.5 ~ 16.5V, Inverter Part,
j = 125°C Start
T
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
PBT
BPN
Condition
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Ratings
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
V
rms
WVU
65mm
Tc
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
Parameter
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part, (Note-1)
Brake FWDi part, (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part, (Note-2)
Brake FWDi part, (Note-2)
Case to fin, Thermal grease applied (per 1 module)
(Note-2) TC measurement point is just under the chips.
If you use this value, R
th(f-a) should be measured just under the chips.
Test Condition
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
CIN
= 15V
Test Condition
(Fig. 4)
Symbol
CE(sat)
V
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 100A
V
V
CIN = 0V, Pulsed (Fig. 1)
–I
C = 100A, VD = 15V, VCIN = 15V (Fig. 2)
D = 15V, VCIN = 15V↔0V
V
V
CC = 300V, IC = 100A
T
j = 125°C
Inductive Load (upper and lower arm) (Fig. 3)
VCE = V
CES
, V
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.38
0.70
0.71
1.66
0.23
0.36
0.45
0.96
0.027
Limits
Min. Typ. Max.
—
—
—
0.8
—
—
—
—
—
—
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
—
—
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
10
Unit
°C/W
Unit
V
V
µs
1
mA
Jul. 2005
Loading...