Mitsubishi Electric US, Inc PM100RL1A120 Data Sheet
PM100RL1A120
November2012
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
Inverter + Brake + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBT
TM
chip
b) The over-temperature protection which detects the chip sur-
face temperature of CSTBT
TM
is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.
•3φ 100A, 1200V Current-sense and temperature sense
IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-F
O available
from upper arm devices)
• UL Recognized
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
135
6-M5 Nuts
122.1
110±
26 26 40.5
0.5
11.7
6.05
(Screwing Depth)
13
18
11
4-φ5.5
Mounting Holes
(13)
WV U
10.5
71.5
66.5
13
19- 0.5
3-2 3-2
10 10
9 5 1
3.25
6-2 3-2
10
19
2-φ2.5
LABEL
30.15 11
1
18.7
6.05
B
N
P
20 20 21.5
+1
-0.5
24.1
78±0.5
90.1
33.6
110
Te rminal code
1. VUPC
34.7
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
4
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
May 2009
INTERNAL FUNCTIONS BLOCK DIAGRAM
November2012
V
Br
Fo
V
NC
V
N1
W
N
N
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
WPV
U
N
V
WPC
WF
WP1
O
V
VPC
VPV
VF
VP1
O
V
UPC
UPV
UF
UP1
O
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
BNWVUP
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
1.5k 1.5k 1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
*: TC measurement point is just under the chip.
V
D = 15V, VCIN = 15V
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C (Note-1)
1200
100
200
657
–20 ~ +150
V
A
A
W
°C
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
IF
VR(DC)
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature
D = 15V, VCIN = 15V
V
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C
1200
50
100
462
50
1200
–20 ~ +150
CONTROL PART
Symbol
VD
VCIN
V
FO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Parameter Condition Ratings Unit
Applied between : V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
UN • VN • WN • Br-VNC
FO-VNC
20
20
20
20
May 2009
2
V
A
A
W
A
V
°C
V
V
V
mA
MITSUBISHI <INTELLIGENT POWER MODULES>
November2012
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
V
CC(surge)
T
Storage Temperature
stg
V
Isolation Voltage
iso
*: TC measurement point is just under the chip.
Supply Voltage Protected by
SC
Supply Voltage (Surge)
=13.5V ~ 16.5V
V
D
Inverter Part, T
=+125°C Start
j
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
800 V
1000 V
-40 ~ +125 °C
2500 V
THERMAL RESISTANCE
Symbol Parameter Conditions
R
Inverter, IGBT (per 1 element) (Note.1) - - 0.19
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Note.1: If you use this value, R
Thermal Resistance
Inverter, FWDi (per 1 element) (Note.1) - - 0.31
Brake, IGBT (Note.1) - - 0.27
Contact Thermal Resistance
should be measured just under the chips.
th(f-a)
Brake, FwDi upper part (Note.1) - - 0.47
Case to fin, (per 1 module)
Thermal grease applied (Note.1)
Min. Typ. Max.
Limits
- -
0.023
Unit
°C/W
Top View Top View
PM100RL1A120 PM100RL1A120 350G
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
V
CE(sat)
Collector-Emitter Saturation
Voltage
VEC FwDi Forward Voltage -IC=100A, VD=15V, V
ton
trr
t
t
t
I
c(on)
off
c(off)
CES
Switching Time
Collector-Emitter Cut-off
Current
=15V, IC=100A
V
D
V
=0V, Pulsed (Fig. 1)
CIN
= 15V (Fig. 2)
CIN
V
=15V, V
D
=600V, IC=100A
V
CC
=125°C
T
j
=0V←→15V
CIN
Inductive Load (Fig. 3,4)
V
CE=VCES
, VD=15V , V
=15V (Fig. 5)
CIN
Tj=25°C
=125°C
T
j
Tj=25°C
=125°C
T
j
* ”350G” is printed on the label
Limits
Min. Typ. Max.
- 1.65 2.15
- 1.85 2.35
- 2.3 3.3
0.3 0.8 2.0
- 0.3 0.8
- 0.4 1.0
- 1.2 2.8
- 0.4 1.2
- - 1
- - 10
Unit
V
V
s
mA
3
November. 2012
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