Datasheet PM100RL1A120 Datasheet (MITSUBISHI)

PM100RL1A120

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBT

TM

chip

b) The over-temperature protection which detects the chip sur-

TM

face temperature of CSTBT

is adopted.

c) Error output signal is possible from all each protection up-

per and lower arm of IPM.

d) Compatible L-series package.

•3φ 100A, 1200V Current-sense and temperature sense
IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-F

O available

from upper arm devices)

• UL Recognized

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

135

6-M5 Nuts

122.1

110±

26 26 40.5

0.5

11.7

6.05

(Screwing Depth)

13

18

11

4-φ5.5
Mounting Holes

(13)

WV U

10.5

71.5

66.5

3.25

6-2 3-2

10

19

2-φ2.5

13

19- 0.5

3-2 3-2

10 10

9 5 1

LABEL

30.15 11

1

18.7

6.05

B

N

P

20 20 21.5

+1

-0.5

24.1

78±0.5

90.1

33.6

110

Te rminal code

1. VUPC

34.7

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

4

11. WP

12. VWP1

13. VNC

14. VN1

15. Br

16. UN

17. VN

18. WN

19. Fo

May 2009

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

Br

Fo

V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

BNWVUP

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

*: TC measurement point is just under the chip.

V

D = 15V, VCIN = 15V

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C (Note-1)

1200

100
200
657

–20 ~ +150

V
A

A
W
°C

BRAKE PART

Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
IF
VR(DC)
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C

1200

50
100
446

50

1200

–20 ~ +150

CONTROL PART

Symbol

VD

VCIN

V

FO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Parameter Condition Ratings Unit

Applied between : V

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC

UN • VN • WN • Br-VNC

FO-VNC

20

20

20

20

May 2009

2

V
A
A

W

A
V

°C

V

V

V

mA

TOTAL SYSTEM

Symbol

V

CC(PROT)

V

CC(surge)

Tstg
Viso

Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Isolation Voltage

V

D = 13.5 ~ 16.5V

Inverter Part, T

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Condition

j = +125°C Start

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Brake IGBT part (Note-1)
Brake FWDi upper part (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

* If you use this value, Rth(f-a) should be measured just under the chips.

Condition

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

Min.

—
—
—
—

—

Ratings

800

1000

–40 ~ +125

2500

Limits

Typ. Max.

—
—
—
—

—

0.023

0.19

0.31

0.28

0.48

Unit

V

V

°C

V

rms

Unit

°C/W

(Note-1) T

axis

C (under the chip) measurement point is below.

arm

X
Y

IGBT

24.5

57.0

UP

FWDi

24.5

46.6

VP WP UN VN WN BR

IGBT

FWDi

IGBT

58.0

58.0

88.0

57.0

46.6

57.0

FWDi

88.0

46.6

IGBT

39.0

28.4

FWDi

39.0

38.8

X

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol

CE(sat)

V

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter Saturation
Voltage

FWDi Forward Voltage

Switching Time

Collector-Emitter Cutoff
Current

D = 15V, IC = 100A

V
V

CIN = 0V, Pulsed (Fig. 1)

–I

C = 100A, VD = 15V, VCIN = 15V (Fig. 2)

D = 15V, VCIN = 0V↔15V

V
V

CC = 600V, IC = 100A

T

j = 125°C

Inductive Load (Fig. 3,4)

VCE = V

CES

, VD = 15V

Condition

(Fig. 5)

IGBT

72.5

28.4

Y

FWDi

72.5

38.8

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

IGBT

FWDi

102.5

102.5

28.4

38.8

Min. Typ. Max.

—
—
—

0.3
—
—
—
—
—
—

(unit : mm)

IGBT

12.2

27.6

Limits

1.65

1.85

2.3

0.8

0.3

0.4

1.2

0.4
—
—

Di

6.8

61.0

2.15

2.35

3.3

2.0

0.8

1.0

2.8

1.2

10

Unit

V

V

µs

1

mA

May 2009

3

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

BRAKE PART

—
—
—
—
—

—
—

1.2

1.7
200
100

—

135
—

11. 5
—
—
—

1.0

Limits

1.65

1.85

2.3
—
—

Limits

1.5

2.0
—
—

0.2

—

20

12.0

12.5
—

10

1.8

Unit

2.15

2.35

3.3

10

Max.
8
2

1.8

2.3
—
—

—

—
—

12.5
—

0.01

—

16

15

V

V

1

mA

Unit

mA

4

V

A

µs

°C

V

mA

ms

Symbol

VCE(sat)

VEC

ICES

Parameter

Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
Collector-Emitter Cutoff
Current

VD = 15V, IC = 50A
V

CIN = 0V, Pulsed (Fig. 1)

–I

C = 50A, VCIN = 15V, VD = 15V (Fig. 2)

VCE = V

CES

, VD = 15V

Condition

(Fig. 5)

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

Min. Typ. Max.

CONTROL PART

Symbol

ID

V

th(ON)

Vth(OFF)

SC

t

off(SC)

OT
OT
UV
UV
IFO(H)
IFO(L)

tFO

Circuit Current

Input ON Threshold Voltage
Input OFF Threshold Voltage

Short Circuit Trip Level

Short Circuit Current Delay
Time

Over Temperature Protection

(hys)

Supply Circuit Under-Voltage
Protection

r

Fault Output Current

Minimum Fault Output Pulse
Width

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to

protect it.

Parameter

Condition

D = 15V, VCIN = 15V

V

Applied between : U

P-VUPC, VP-VVPC, WP-VWPC

VN1-VNC
V*P1-V*PC

UN • VN • WN • Br-VNC

–20 ≤ T

j ≤ 125°C, VD = 15V (Fig. 3,6)

D = 15V (Fig. 3,6)

V

Detect Temperature of IGBT chip

–20 ≤ Tj ≤ 125°C

D = 15V, VCIN = 15V (Note-2)

V

D = 15V (Note-2)

V

Inverter part
Brake part

Trip level
Hysteresis
Trip level
Reset level

Min. Typ.

MECHANICAL RATINGS AND CHARACTERISTICS

Symbol

—

—

Parameter

Mounting torque

Weight

Mounting part screw : M5
Main terminal part screw : M5

Condition

—

Min.

2.5

2.5
—

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter

VCC

VD

VCIN(ON)
VCIN(OFF)
fPWM

t

dead

Supply Voltage

Control Supply Voltage

Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Time

Blocking

Applied across P-N terminals
Applied between : V

Applied between : U

Using Application Circuit of Fig. 8

For IPM’s each input signals (Fig. 7) ≥ 2.5

Condition

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC (Note-3)

P-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN • Br-VNC

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

≤ ± 5V/µs

≤

2V

15V

GND

Recommended value

Limits

Typ.

3.0

3.0
800

≤ 800

15.0 ± 1.5

≤ 0.8
≥ 9.0

≤ 20

Max.

3.5

3.5
—

Unit

N • m
N • m

g

Unit

V

V

V

kHz

µs

May 2009

4

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (V
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al­lowed to rise above V

CES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

P, (U,V,W,B)

D), the input terminals should be pulled up by resistors, etc. to their corre-

P, (U,V,W,B)

V

(0V)

IN

V

Fo

D (all)

CIN

V V

U,V,W,B, (N) U,V,W,B, (N)

Ic

V

(15V)

CIN

IN
Fo

VD (all)

Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

a) Lower Arm Switching

Signal input

VCIN

(Upper Arm)

(15V)

VCIN

Signal input

(Lower Arm)

b) Upper Arm Switching

VCIN

(15V)

Signal input

(Upper Arm)

Signal input

(Lower Arm)

VCIN

Fo

Fo

D (all)

V

Fo

Fo

D (all)

V

P

U,V,W

N

P

U,V,W

N

trr

Vcc

CS

Ic

Vcc

CS

Ic

90%

10%

tc(on)

V

CIN

(ton = td(on) + tr) (toff = td(off) + tf)

Irr

10% 10%

trtd(on)

Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform

VCIN
(15V)

P, (U,V,W,B)

IN
Fo

U,V,W,B, (N)

VD (all)

Fig. 5 ICES Test

VCIN

A

Pulse

VCE

Ic

Fo

Short Circuit Current

Constant Current

toff(SC)

Fig. 6 SC Test Waveform

Ic

td(off)

tc(off)

–Ic

90%

tf

SC Trip

10%

V

CE

IPM’ input signal V

(Upper Arm)

IPM’ input signal V

(Lower Arm)

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

CIN

0V

CIN

0V

1.5V 1.5V

2V

2V

1.5V

2V

tdeadtdeadtdead

Fig. 7 Dead time measurement point example

5

t

t

May 2009

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

VD

VD

VD

VD

≥10µ

20k

→

IF

≥0.1µ

20k

→

IF

≥0.1µ

20k

→

IF

≥0.1µ

20k

≥0.1µ

4.7k

5V

→

IF

→

IF

1k

≥10µ

≥10µ

≥10µ

VUP1

UFo

UP

VUPC

VVP1

VFo

VP

VVPC

VWP1

WFo

WP

VWPC

UN

VN

VN1

WN

VNC

Br

Fo

1.5k

1.5k

1.5k

1.5k

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

GND

Vcc

Fo

In

GND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GND

OT

OUT

Si

GND

P

+
–

U

V

W

N

B

M

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

•

stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.

•

Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.

•

Slow switching opto-coupler: CTR > 100%

•

Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

•

power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

•

terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line

•

and improve noise immunity of the system.

May 2009

6

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RL1A120

FLAT-BASE TYPE

INSULATED PACKAGE

PERFORMANCE CURVES
(Inverter Part)

(A)

C

COLLECTOR CURRENT I

(V)

CE(sat)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

OUTPUT CHARACTERISTICS

140

Tj = 25°C

120

100

80

60

40

20

0

0

0.5 1.0 1.5 2.0

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. V

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0
12 13 14 15 16 17 18

CONTROL POWER SUPPLY VOLTAGE VD (V)

(TYPICAL)

VD = 17V

D

) CHARACTERISTICS

(TYPICAL)

IC = 100A
T

j

= 25°C

T

j

= 125°C

15V

13V

CE

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(TYPICAL)

2.5
VD = 15V

(V)

2.0

CE(sat)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

20 40 60 80 100 120 140

0

COLLECTOR CURRENT I

DIODE FORWARD CHARACTERISTICS

(A)

3

10

C

7

VD = 15V

5

3
2

2

10

7
5

3
2

1

10

7
5

3
2

0

10

0

COLLECTOR RECOVERY CURRENT –I

(TYPICAL)

0.5 1.0 1.5 2.0 2.5

EMITTER-COLLECTOR VOLTAGE V

Tj = 25°C

j

= 125°C

T

C

(A)

Tj = 25°C
T

j

= 125°C

EC

(V)

SWITCHING TIME (ton, t

1

10

7

5

(µs)

4

off

3

, t

on

2

0

10

7

5
4

3

2

SWITCHING TIME t

–1

10

10

0

23 57

t

off

t

on

10

COLLECTOR CURRENT I

off

) CHARACTERISTICS

(TYPICAL)

VCC = 600V
V

D

= 15V
T
T
Inductive load

1

23 57

10

j

= 25°C

j

= 125°C

2

23 57

C

(A)

10

SWITCHING TIME (tc

1

10

7

(µs)

5
4

c(off)

3

, t

2

c(on)

0

10

7

5
4

3

2

t

c(off)

t

c(on)

(on)

, tc

(off)

(TYPICAL)

VCC = 600V
V
T
T
Inductive load

) CHARACTERISTICS

D

= 15V

j

= 25°C

j

= 125°C

SWITCHING TIME t

–1

3

10

0

10

23 57 23 57

10

1

10

2

23 57

10

3

COLLECTOR CURRENT IC (A)

May 2009

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MITSUBISHI <INTELLIGENT POWER MODULES>

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SWITCHING LOSS CHARACTERISTICS

(TYPICAL)

16.0
VCC = 600V

V

D

14.0

12.0

(mJ/pulse)

off

10.0

, E

on

= 15V

j

= 25°C

T
T

j

= 125°C

Inductive load

E

on

8.0

6.0

E

off

4.0

2.0

SWITCHING LOSS E

0

0

20 40 60 80 100 120

COLLECTOR CURRENT IC (A)

SWITCHING RECOVERY LOSS CHARACTERISTICS

(TYPICAL)

7.0
VCC = 600V

V

D

= 15V

6.0
T

j

= 25°C

T

j

5.0

(mJ/pulse)

rr

= 125°C

Inductive load

4.0

3.0

2.0

1.0

SWITCHING LOSS E

0

0

20 40 60 80 100 120

DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

1.0
VCC = 600V

0.9

(µs)

V

D

T

0.8
T

0.7

Inductive load

= 15V

j

= 25°C

j

= 125°C

rr

0.6

0.5

0.4

0.3

0.2

0.1

REVERSE RECOVERY TIME t

0

20 40 60 80 100 120

0

COLLECTOR REVERSE CURRENT –I

D

VS. fc CHARACTERISTICS

I

50.0

45.0

40.0

35.0

I

rr

30.0

25.0

20.0

15.0

10.0

t

rr

5.0

0

C

(A)

(TYPICAL)

120.0
VD = 15V

T

j

T

= 25°C

j

= 125°C

N-side

100.0

80.0

60.0

(mA)

D

I

40.0

P-side

20.0

0

0

5 10 15 20 25

(A)

rr

REVERSE RECOVERY CURRENT l

COLLECTOR REVERSE CURRENT –IC (A)

j

UV TRIP LEVEL VS. T

CHARACTERISTICS

(TYPICAL)

20

18

16

14

r

12

/UV

10

t

UV

8

6

4

2

0
–50

0 50 100 150 –50 0 50 100 150

T

j

(°C)

UV
UVr

fc (kHz)

SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL)

t

2.0

1.8

VD = 15V

1.6

1.4

1.2

1.0

SC

0.8

0.6

0.4

0.2

0

Tj (°C)

May 2009

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TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(TYPICAL)

0

10

7
5

3

th(j-c)

2

–1

10

7
5

3
2

–2

10

Single Pulse

7

IGBT part;

5

NORMALIZED TRANSIENT

Per unit base

3

THERMAL IMPEDANCE Z

FWDi part;

2

Per unit base

–3

10

–5

10

10

= R

= R

–3

–4

23 57

23 5723 57

10

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(TYPICAL)

2.5
VD = 15V

(V)

2.0

CE(sat)

1.5

th(j-c)

Q = 0.19°C/W

th(j-c)

F = 0.31°C/W

–2

23 57

10

t(sec)

10

–1

23 57

10

0

23 57

10

(Brake Part)

OUTPUT CHARACTERISTICS

60

Tj = 25°C

(A)

50

C

40

30

20

10

COLLECTOR CURRENT I

1

0

0

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. V

2.4

(V)

2.2

CE(sat)

2.0

1.8

(TYPICAL)

15V

VD = 17V

13V

0.5 1.0 1.5 2.0

CE

D

) CHARACTERISTICS

(TYPICAL)

(V)

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

0

20 30 40 50 60 70

10

COLLECTOR CURRENT I

DIODE FORWARD CHARACTERISTICS

(A)

2

10

C

VD = 15V

7

5
4

3

2

1

10

7

5
4

3

2

0

10

0

COLLECTOR RECOVERY CURRENT –I

(TYPICAL)

0.5 1.0 1.5 2.0 2.5

EMITTER-COLLECTOR VOLTAGE V

Tj = 25°C

j

= 125°C

T

C

(A)

Tj = 25°C

j

= 125°C

T

EC

(V)

1.6

1.4

COLLECTOR-EMITTER

1.2

SATURATION VOLTAGE V

1.0
12 13 14 15 16 17 18

IC = 50A
T
T

j

j

CONTROL POWER SUPPLY VOLTAGE VD (V)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(TYPICAL)

0

10

7
5

3

th(j-c)

2

–1

10

7
5

3
2

–2

10

Single Pulse

7

IGBT part;

5

NORMALIZED TRANSIENT

Per unit base

3

THERMAL IMPEDANCE Z

FWDi part;

2

Per unit base

–3

10

–5

10

10

= R

th(j-c)

Q = 0.28°C/W

= R

th(j-c)

F = 0.48°C/W

–3

–4

23 57

23 5723 57

10

10

–2

23 57

10

–1

23 57

t(sec)

= 25°C
= 125°C

0

23 57

10

10

1

May 2009

9