Mitsubishi Electric US, Inc PM100RG1B120 Data Sheet
<Intelligent Power Modules>
PM100RG1B120
FLAT-BASE TYPE
INSULATED PACKAGE
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
FEATURE
a) Adopting Full-Gate CSTBTTM chip.
b) The over-temperature protection which
detects the chip surface temperature of
CSTBT
TM
is adopted.
c) Error output signal is available from
each protection upper and lower arm of IPM.
d) Outputting an error signal corresponding
to the abnormal state (error mode identification)
UL Recognized under UL1557, File No. E323585
This product is compliant with the Restriction of the Use of Certain
Hazardous Substances in Electrical and Electronic Equipment
(RoHS) directive 2011/65/EU.
TERMINAL CODE
1.V
2.U
3.U
4.V
5.V
6.V
7.V
8.V
9.V
10.W
11. W
12.V
13.V
14.V
15.BR
16.UN
17.V
18.W
19.F
Tolerance otherwise specified
Division of
Dimension
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
UPC
FO
P
UP1
VPC
FO
P
VP1
WPC
FO
P
WP1
NC
N1
N
N
O
Tolerance
APPLICATION NOTE <CMH-11641-A>
Publication date : Nov, 2017
1
<Intelligent Power Modules>
PM100RG1B120
HIGH POWER SWITCHING USE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
UPC
V
UPC
WPC
GND
, V
, VP-V
, VFO-V
W
P
W
INGND
Si
VP1-VVPC
VPC
VPC
V
Fo
1.5k
Fo
OT
, V
, WP-V
, WFO-V
V
P
V
WP1
V
VPC
IN
GND
Vcc
GND Si OT
OUT
WP1-VWPC
, VN1-VNC 20 V
, UN, VN, WN, Br -VNC 20 V
WPC
, Fo-VNC 20 V
WPC
VP1
V
Fo
1.5k
VccFo
OUT
U
P
V
UPC
U
Fo
1.5k
GND
FoIN
GNDSiOT OUT
V
UP1
Vcc
PUVWN
A
A
A
Fo V
Br
1.5k
NCWN
V
N1
V
N
U
N
FoIN
GND
GND Si OT OUT
Vcc
GND
FoIN
Vcc
GND Si OT OUT
VccFoINGND
GND Si OT OUT
GND
GND Si OT OU T
Vcc
FoIN
MAXIMUM RATINGS (Tvj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15 V, V
CES
IC
I
Pulse 200
CRM
P
Total Power Dissipation TC=25 °C 595 W
tot
IE Emitter Current TC=25 °C 100
I
(Free-wheeling Diode Forward current) Pulse 200
ERM
Tv j Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
BRAKE PART
Symbol Parameter Conditions Ratings Unit
V
Collector-Emitter Voltage VD=15 V, V
CES
IC
I
Pulse 100
CRM
P
Total Power Dissipation TC=25 °C 378 W
tot
V
Diode Rated Reverse DC Voltage TC=25 °C 1200 V
R(DC)
IF Diode Forward Current TC=25 °C 50 A
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage Applied between: V
V
Input Voltage Applied between: UP-V
CIN
VFO Fault Output Supply Voltage Applied between: UFO-V
IFO Fault Output Current Sink current at UFO, VFO, WFO, Fo terminals 20 mA
B
Collector Current
Collector Current
=15 V 1200 V
CIN
TC=25 °C 100
=15 V 1200 V
CIN
TC=25 °C 50
UP1-VUPC
APPLICATION NOTE <CMH-11641-A>
2
<Intelligent Power Modules>
PM100RG1B120
HIGH POWER SWITCHING USE
INSULATED TYPE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
Supply Voltage Protected by SC VD =13.5 V~16.5 V, Inverter Part, Tvj=+125°C start 800 V
CC(PROT)
T
Storage Temperature - -40 ~ +125 °C
stg
TC Operating Case Temperature - -20 ~ +125 °C
V
Isolation Voltage 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS 2500 V
isol
*: Tc measurement point is just under the chip.
THERMAL RESISTANCE
Symbol Parameter Conditions
R
th(j-c)Q
R
Inverter, Junction to case, FWD, per 1 element (Note1) - - 0.31
th(j-c)D
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Note1. If you use this value, R
Thermal Resistance
Brake, Junction to case, IGBT, per 1 element (Note1) - - 0.33
Brake, Junction to case, FWD, per 1 element (Note1) - - 0.51
Contact Thermal Resistance
should be measured just under the chips.
th(s-a)
Note2. Typical value is measured by using thermally conductive grease of λ=0.9W/(m·K), D
Inverter, Junction to case, IGBT, per 1 element (Note1) - - 0.21
Case to heat sink, per 1 module,
Thermal grease applied (Note.1, 2)
=50 μm.
(C-S)
CHIP LOCATION (Top view) Dimension in mm, torelance: ±1mm
Limits
Min. Typ. Max.
- 14.4 - K/kW
Tr** : IGBT
Di** : FWD
Unit
K/W
APPLICATION NOTE <CMH-11641-A>
3
<Intelligent Power Modules>
PM100RG1B120
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tv j= 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions
V
=15 V, IC=100 A Tv j=25 °C
D
V
Collector-Emitter Saturation Voltage
CEsa t
V
=0 V, Pulsed, (Fig.1) Tv j =125 °C
CIN
=15 V, IE=100 A, Tv j=25 °C
V
D
VEC Emitter-Collector Voltage
V
= 15 V, pulsed, (Fig.2) Tv j =125 °C
CIN
ton
trr V
t
Tv j=125 °C, - 0.2 0.4
c(on)
t
Inductive Load - 1.1 2.8
off
t
c(off)
I
Collector-Emitter Cut-off Current
CES
Switching Time
(Fig.3, 4) - 0.4 1.2
VD=15 V, V
=600 V, I
CC
V
V
, VD=15 V,
CE=VCES
=15 V (Fig.5)
CIN
=0 V←→15 V, 0.3 0.8 1.2
CIN
=100A, - 0.2 0.4
C
Terminal - - 1.85
Chip - 1.3 -
Terminal - - 2.1
Chip - 1.5 -
Terminal - - 2.4
Chip - 1.75 -
Terminal - - 2.65
Chip - 1.95 -
Tv j =25 °C - - 1
Tv j =125 °C - - 10
Limits
Min. Typ. Max.
Unit
V
V
μs
mA
BRAKE PART
Symbol Parameter Conditions
=15 V, IC=100A Tv j =25 °C
V
D
V
Collector-Emitter Saturation Voltage
CEsa t
V
=0 V, Pulsed, (Fig.1) Tv j =125 °C
CIN
VFM Diode Forward Voltage IF=100A
I
Collector-Emitter Cut-off Current VCE=V
CES
, VD=15 V, V
CES
=15 V (Fig.5)
CIN
Tv j =25 °C
Tv j =125 °C
Limits
Min. Typ. Max.
Unit
Terminal - - 1.75
Chip - 1.3 -
Terminal - - 2.0
V
Chip - 1.5 -
Terminal - - 2.35
Chip - 1.75 -
Terminal - - 2.6
V
Chip - 1.95 -
Tv j =25 °C - - 1
Tv j =125 °C - - 10
mA
APPLICATION NOTE <CMH-11641-A>
4
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