Page 1
MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
PM100CSD060
APPLICATION
General purpose inverter, servo drives and other motor controls
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
•3φ 100A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
PM100CSD060
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
CE(sat)=1.7V
File No.E80271
PACKAGE OUTLINES Dimensions in mm
110
17
2020
17.5
±0.5
2
17.02
3.22
BPN
0.5
A
±1
95
±0.5
3-2
10
12
WVU
±0.3
24.5
10
78654321
10
66.44
19- 0.5
3-23-2
9
6-2
10
11
13
10
14
12
2626
4-φ5.5
MOUNTING HOLES
PBT
1918171615
±1
±0.5
89
74
4-R6
6-M5NUTS
2-φ2.54
21.2
22
+1.0
–0.5
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
φ2.54
3.22
11.61.6
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
3-2
A : DETAIL
4.5
0.5
10.6
32.6
31.6
LABEL
22
19.4
4
Jul. 2005
Page 2
INTERNAL FUNCTIONS BLOCK DIAGRAM
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Rfo=1.5kΩ
Rfo
N
C
Gnd In Fo Vcc
Gnd
WN VN1VNC VN
Gnd In Fo Vcc
Gnd
Si Out
UNNC Fo
Gnd In Fo Vcc
Si Out
Gnd
Th
NWV PU
Si Out
WP VWP1
VWPC
Gnd In Fo Vcc
Gnd
Si Out
VP VVP1
VVPC
Gnd In Fo Vcc
Gnd
Si Out
UP VUP1
U
FOWFO VFO
VUPC
Gnd In Fo Vcc
Gnd
Si Out
RfoRfo Rfo
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D = 15V, VCIN = 15V
T
C = 25°C
T
C = 25°C
T
C = 25°C
600
100
200
328
–20 ~ +150
V
A
A
W
°C
CONTROL PART
Symbol
VD
VCIN
VFO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Parameter Condition Ratings Unit
Applied between : V
Applied between : UP-VUPC, VP-VVPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
WP-VWPC, UN • VN • WN-VNC
FO-VNC
20
20
20
20
V
V
V
mA
Jul. 2005
Page 3
TOTAL SYSTEM
Symbol
V
CC(PROT)
V
CC(surge)
TC
Tstg
Viso
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Parameter
V
D = 13.5 ~ 16.5V, Inverter Part,
j = 125°C Start
T
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
PBT
BPN
Condition
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Ratings
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
V
rms
WVU
65mm
Tc
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
Parameter
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Case to fin, Thermal grease applied (per 1 module)
(Note-2) TC measurement point is just under the chips.
If you use this value, R
th(f-a) should be measured just under the chips.
Test Condition
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
CIN
= 15V
Test Condition
(Fig. 4)
Symbol
CE(sat)
V
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 100A
V
V
CIN = 0V, Pulsed (Fig. 1)
–I
C = 100A, VD = 15V, VCIN = 15V (Fig. 2)
D = 15V, VCIN = 15V↔0V
V
V
CC = 300V, IC = 100A
T
j = 125°C
Inductive Load (upper and lower arm) (Fig. 3)
VCE = V
CES
, V
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Limits
Max.Min. Typ.
—
—
—
—
—
—
—
—
—
—
0.38
0.70
0.23
0.36
0.027
Limits
Min. Typ. Max.
—
—
—
0.8
—
—
—
—
—
—
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
—
—
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
10
Unit
°C/W
Unit
V
V
µs
1
mA
Jul. 2005
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MITSUBISHI <INTELLIGENT POWER MODULES>
CONTROL PART
Symbol
ID
V
th(ON)
Vth(OFF)
OC
SC
t
off(OC)
OT
OT
UV
UV
IFO(H)
IFO(L)
tFO
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Over Current Trip Level
Short Circuit Trip Level
Over Current Delay Time
Over Temperature Protection
r
Supply Circuit Under-Voltage
Protection
r
Fault Output Current
Minimum Fault Output Pulse
Width
(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OC, SC and UV protection operate by upper and lower arms.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.
Parameter
Test Condition
VD = 15V, VCIN = 15V
Applied between : U
P-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
V
D = 15V (Fig. 5,6)
j ≤ 125°C, VD = 15V (Fig. 5,6)
–20≤ T
V
D = 15V (Fig. 5,6)
Base-plate
Temperature detection, V
–20 ≤ T
j ≤ 125°C
D = 15V, VFO = 15V (Note-3)
V
V
D = 15V (Note-3)
D = 15V
VN1-VNC
VXP1-VXPC
Tj = –20°C
T
j = 25°C
T
j = 125°C
Trip level
Reset level
Trip level
Reset level
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Limits
Min. Typ.
—
—
1.2
1.7
—
264
158
—
—
111
—
11.5
—
12.0
12.5
—
—
1.0
40
13
1.5
2.0
—
311
—
360
10
118
100
—
10
1.8
Max.
55
18
1.8
2.3
520
430
—
—
—
125
—
12.5
—
0.01
15
—
Unit
mA
V
A
A
µs
°C
V
mA
ms
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
—
Parameter
Mounting torque
Mounting torque
Weight
Main terminal screw : M5
Mounting part screw : M5
Test Condition
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
VCC
VD
VCIN(ON)
VCIN(OFF)
fPWM
tdead
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
Applied across P-N terminals
Applied between : V
Applied between : U
Using Application Circuit input signal of IPM, 3φ
sinusoidal PWM VVVF inverter (Fig. 8)
For IPM’s each input signals (Fig. 7)
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2V
Test Condition
UP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC (Note-4)
P-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
p-p
Limits
Min.
2.5
2.5
Typ.
3.0
3.0
—
560
Recommended value
≤ 400
15 ± 1.5
≤ 0.8
≥ 4.0
≤ 20
≥ 2.5
Max.
3.5
3.5
—
Unit
N • m
N • m
g
Unit
V
V
V
kHz
µs
Jul. 2005
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (V
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above V
CES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
D), the input terminals should be pulled up by resistores, etc. to their corre-
P, (U,V,W)
P, (U,V,W)
IN
V
(0V)
CIN
Fo
D
(all)
V
Fig. 1 V
a) Lower Arm Switching
Signal input
V
CIN
(Upper Arm)
(15V)
V
Signal input
CIN
(Lower Arm)
b) Upper Arm Switching
CIN
V
(15V)
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
IN
Fo
D
(all)
V
V
CIN
(15V)
V
Fig. 4 I
IN
V
CIN
Fo
VD (all)
Fig. 5 OC and SC Test
IN
V V
Ic
V
(15V)
CIN
U,V,W, (N) U,V,W, (N)
CE(sat)
Test Fig. 2 VEC Test
P
Fo
U,V,W
Fo
V
D
(all)
Fo
D
(all)
V
N
P
Fo
U,V,W
N
Vcc
C
S
Ic
Vcc
C
S
Ic
Fo
VD (all)
90%
10%
V
CIN
(ton= td (on) + tr) (toff= td (off) + tf)
Fig. 3 Switching time Test circuit and waveform
P, (U,V,W)
U,V,W, (N)
CES
P, (U,V,W)
U,V,W, (N)
Test
A
Pulse
V
CE
I
C
CIN
V
I
C
t
off (OC)
Short Circuit Current
V
CC
I
C
Fig. 6 OC and SC Test waveform
P
trr
Irr
10% 10%
tc (on) tc (off)
trtd (on)
Over Current
Constant Current
Constant Current
Ic
td (off)
–Ic
90%
tf
OC
10%
SC
CE
V
V
D
V
CINP
V
D
CINN
V
V
CINP
0V
CINN
V
0V
t
dead
t
dead
U,V,W
N
Vcc
Ic
t
t
dead
t
Fig. 7 Dead time measurement point example
Jul. 2005
Page 6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
VD
VD
VD
VD
≥10µ
20k
→
IF
≥0.1µ
20k
→
IF
≥0.1µ
20k
→
IF
≥0.1µ
→
IF
20k
≥0.1µ
≥10µ
≥10µ
≥10µ
VUP1
UFO
UP
VUPC
VVP1
VFO
VP
VVPC
VWP1
WFO
WP
VWPC
UN
VN
VN1
WN
VNC
Rfo
Rfo
Rfo
Vcc
Fo
In
Vcc
Fo
In
Vcc
Fo
In
Vcc
Fo
In
Vcc
Fo
In
Vcc
Fo
In
GND
OUT
GNDGND
OUT
GNDGND
OUT
GNDGND
OUT
GNDGND
TEMP
OUT
GNDGND
OUT
GND
Si
Si
Si
Si
Th
Si
Si
P
U
V
W
N
+
–
M
NC
NC
1k
5V
Rfo
Fo
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module
•
should be shortened as much as possible to minimize the floating capacitance.
Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
•
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
Jul. 2005
Page 7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
120
T
j
= 25°C
(A)
100
C
80
60
40
20
COLLECTOR CURRENT I
0
0
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
2
(V)
CE (sat)
1.5
1
0.5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0
1312 1514 1716
(TYPICAL)
VD = 17V
10.5 1.5 2
D
) CHARACTERISTICS
(TYPICAL)
IC = 100A
T
j
= 25°C
T
j
= 125°C
15V
13V
CE
(V)
18
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
2
(V)
CE (sat)
VD = 15V
1.5
1
0.5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0
20 40 60 80 100
0
COLLECTOR CURRENT IC (A)
SWITCHING TIME CHARACTERISTICS
1
10
VCC = 300V
7
V
D
5
T
4
T
3
Inductive load
2
0
10
7
5
4
3
2
= 15V
j
j
= 25°C
= 125°C
(µs)
c(off)
, t
c(on)
SWITCHING TIME t
–1
10
1
10
234 23 57
(TYPICAL)
(TYPICAL)
t
c(off)
t
c(on)
t
c(off)
2
57
10
T
j
= 25°C
j
= 125°C
T
4
10
3
CONTROL SUPPLY VOLTAGE VD (V)
SWITCHING TIME CHARACTERISTICS
1
10
7
5
(µs)
4
off
3
, t
on
2
0
10
7
5
4
3
2
SWITCHING TIME t
–1
10
1
10
23 23 57
(TYPICAL)
t
off
t
on
2
57
10
VCC = 300V
V
T
T
Inductive load
COLLECTOR CURRENT IC (A)
D
= 15V
j
= 25°C
j
= 125°C
44
10
COLLECTOR CURRENT I
C
(A)
SWITCHING LOSS CHARACTERISTICS
1
10
7
(mJ/pulse)
5
4
(off)
3
SW
2
, E
(on)
0
10
SW
7
5
4
3
2
–1
3
10
1
10
SWITCHING LOSS E
COLLECTOR CURRENT I
(TYPICAL)
E
SW
(off)
E
SW
(on)
VCC = 300V
V
D
= 15V
j
= 25°C
T
T
j
= 125°C
Inductive load
2
57
23 23 57
10
44
C
(A)
10
3
Jul. 2005
Page 8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSD060
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE FORWARD CHARACTERISTICS
(A)
2
10
C
I
–
VD = 15V
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
COLLECTOR RECOVERY CURRENT
(TYPICAL)
T
T
0.5 1 1.5 2 2.5
EMITTER-COLLECTOR VOLTAGE V
D
VS. fc CHARACTERISTICS
I
(TYPICAL)
100
VD = 15V
T
j
= 25°C
80
(mA)
D
60
40
20
CIRCUIT CURRENT I
0
5101520
j
= 25°C
j
= 125°C
N-side
P-side
EC
250
(V)
DIODE REVERSE RECOVERY CHARACTERISTICS
0
10
7
(µs)
rr
5
4
3
2
–1
10
7
5
4
3
2
REVERSE RECOVERY TIME t
–2
10
1
10
(TYPICAL)
I
rr
t
rr
10
2
4323574
257
VCC = 300V
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
Inductive load
10
COLLECTOR RECOVERY CURRENT –I
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
7
5
3
2
th (j – c)
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
Single Pulse
3
THERMAL IMPEDANCE Z
2
Per unit base = R
–3
10
–3
23 57
10
(IGBT PART)
–2
23 57
10
th(j – c)Q
–1
23 57
10
= 0.38°C/W
0
23 57
10
C
10
2
10
(A)
rr
7
5
4
3
2
1
10
7
5
4
3
2
0
10
REVERSE RECOVERY CURRENT l
3
(A)
1
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
7
5
3
2
th (j – c)
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
Single Pulse
3
THERMAL IMPEDANCE Z
2
Per unit base = R
–3
10
–3
23 57
10
(FWDi PART)
–2
23 57
10
TIME (s)
th(j – c)F
–1
23 57
10
= 0.70°C/W
0
23 57
10
10
TIME (s)
1
Jul. 2005
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