Mitsubishi Electric US, Inc FM600TU-2A Data Sheet

FM600TU-2A

MITSUBISHI <MOSFET MODULE>

FM600TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

●

ID(rms) .......................................................... 300A

● VDSS.............................................................100V

● Insulated Type

●

6-elements in a pack

●

Thermistor inside

●

UL Recognized

File No.E323585

APPLICATION

AC motor control of forklift (battery power source), UPS

OUTLINE DRAWING & CIRCUIT DIAGRAM

110

±0.25

97

70.9

36

10

30

NP

13

14

5-6.5

38

9.2

UV

1414

32 3216.5

14

202020

B

3
(8.7)

(6)

3.96

W

4

MOUNTINGHOLES

CIRCUIT DIAGRAM

P

(17.5)

4-φ6.5

(14.5)

7-M6NUTS

6.5

(6)(6)

22.75

15.2

16.5

16 1632

36

10

30

7 7

(15.8)

6.5

3

7

1216

A

25

6.5

11.5

4

(14.5)

22.57

9.1

±0.25

90

80

75

67

Tc measured point

Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1

Dimensions in mm

±1.0

35

＋1.0

26

−0.5

LABEL

14

(SCREWING DEPTH)

(7)G
(1)S

(10)G

(4)S

U

P

U

P

U

N

U

N

N

(8)G

V

P

(2)SVP

UVW

V

(11)G

V

N

(5)S

(9)G

W

P

(3)S

W

P

N

(12)G

(6)S

W

N

W

N

(13)

(14)

(1)SUP

U

(7)G

(13)TH1

P

(2)S

V

P

V

P

(8)G

(14)TH2

(3)S

(9)G

(4)S

W

P

W

P

(10)G

(5)S

U

N

U

N

(11)G

V

N

V

N

(6)S

W

N

(12)GWN

A

B

Mar. 2013

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise specified.)

Symbol

V

DSS

VGSS
ID
IDM
IDA

1

IS*
ISM*

4

PD*

4

PD*
Tch
Tstg
Visol

—

—

Drain-source voltage
Gate-source voltage

Drain current

Avalanche current

Source current

1

Maximum power dissipation

Channel temperature
Storage temperature
Isolation voltage

Mounting torque

Weight

G-S Short
D-S Short
T

C’ = 133°C*

Pulse*

3

2

L = 10µH Pulse*

2

Pulse*
TC = 25°C
T

C’ = 25°C*

3

Main terminal to base plate, AC 1 min, f=60Hz, RMS
Main Terminal M6
Mounting to heat sink M6
Typical value

ConditionsItem

2

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified.)

ConditionsItemSymbol

DSS

I
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)

RDD'-SS'

Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf

1

trr*

1

Qrr*

1

VSD*
Rth(j-c)
Rth(j-c’)
Rth(c-s)
Rth(c’-s’)

Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage

Internal lead resistance

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage

Thermal resistance

Contact thermal resistance

V

DS = VDSS, VGS = 0V

I

D = 30mA, VDS = 10V

V

GS = VGSS, VDS = 0V

I

D = 300A

V

GS = 15V

I

D = 300A

V

GS = 15V

I

D = 300A

terminal-chip

V

DS = 10V

V

GS = 0V

V

DD = 48V, ID = 300A, VGS = 15V

DD = 48V, ID = 300A, VGS1 = VGS2 = 15V

V
R

G = 4.2Ω, Inductive load switching operation

I

S = 300A

S = 300A, VGS = 0V

I
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*

7

3

Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*

Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C

3, *8

(1/6 module)

MITSUBISHI <MOSFET MODULE>

FM600TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

Min.

—

4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

Rating

100
±20
300
600
300
300
600
960

1300
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
600

Limits

Typ.

—

6

—

0.8

1.37

0.24

0.41

0.7

1.0
—
—
—

1800

—
—
—
—
—

6.2
—
—
—

0.1

0.09

Max.

0.33

110

400
600
600
400
250

0.13

0.096

7.3

1.5

1.1
—

—
—
—

15
10

—

—

1.3

—
—

Unit

V
V
A
A
A
A

A
W
W

°C
°C

V

N • m
N • m

g

Unit

1

mA

V

µA

mΩ

V

mΩ

nF

nC

ns

ns

µC

V

K/W

NTC THERMISTOR PART

Symbol

6

R25*

6

B*

1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).

*

2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.

*

3: TC’ measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.

*

4: Pulse width and repetition rate should be such as to cause negligible temperature rise.

*

5: TTH is thermistor temperature.

*

6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)

*

7: TC measured point is shown in page OUTLINE DRAWING.

*

8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

*

Resistance
B Constant

TTH = 25°C*
Resistance at TTH = 25°C, 50°C*

5

ConditionsParameter

5

Min.

—
—

Limits

Typ.

100

4000

Max.

—
—

Unit

kΩ

K

Mar. 2013

PERFORMANCE CURVES

MITSUBISHI <MOSFET MODULE>

FM600TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

OUTPUT CHARACTERISTICS

(A)

D

600

500

400

V

GS

= 20V

15V

300

200

DRAIN CURRENT I

100

0

0 0.2 0.4 0.6 0.8 1.0

DRAIN-SOURCE VOLTAGE V

DRAIN-SOURCE ON-STATE

VOLTAGE VS. TEMPERATURE

1.8
ID = 300A

1.6

(mΩ)

1.4

DS(on)

1.2

1.0

0.8

0.6

DRAIN-SOURCE

0.4

0.2

ON-STATE RESISTANCE r

0

0

20

40 60 80

JUNCTION TEMPERATURE Tj (°C)

(TYPICAL)

10V

(TYPICAL)

V

GS

= 12V

12V

Tj = 25°C

V

GS

100

120 140 160

Chip

DS

(V)

Chip

= 15V

9V

TRANSFER CHARACTERISTICS

600

V

DS

= 10V

(TYPICAL)

500

(A)

D

400

Tj = 125°C

Tj = 25°C

300

200

DRAIN CURRENT I

100

0

5791113 15

GATE-SOURCE VOLTAGE V

GATE THRESHOLD

VOLTAGE VS. TEMPERATURE

(TYPICAL)

(V)

GS(th)

7

6

5

VDS = 10V
I

D

= 30mA

4

3

2

1

0

GATE THRESHOLD VOLTAGE V

0

20

40 60 80

100

JUNCTION TEMPERATURE Tj (°C)

Chip

GS

(V)

120 140 160

DRAIN-SOURCE ON-STATE

VOLTAGE VS. GATE BIAS

2.0

Tj = 25°C

(V)

1.6

DS(on)

1.2

0.8

DRAIN-SOURCE

0.4

ON-STATE VOLTAGE V

0

ID = 150A

048121620

GATE-SOURCE VOLTAGE V

(TYPICAL)

Chip

ID = 600A

ID = 300A

GS

(V)

CAPACITANCE VS.

DRAIN-SOURCE VOLTAGE

2

10

7

5

3

2

1

10

7
5

3

CAPACITANCE (nF)

2

V

GS

= 0V

0

10

–1

2

357 2

10

10

DRAIN-SOURCE VOLTAGE V

(TYPICAL)

0

357 2

10

1

C

iss

C

oss

C

rss

357

DS

(V)

10

2

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

GATE CHARGE CHARACTERISTICS

20

ID = 300A

(TYPICAL)

(V)

GS

16

V

DD

12

= 24V V

8

4

GATE-SOURCE VOLTAGE V

0

0 500 1000 1500 2000 2500

GATE CHARGE QG (nC)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7

5

t

d(off)

3

(ns)

2

t

d(on)

2

10

7

5

3

SWITCHING TIME

2

1

10

1

10

(TYPICAL)

t

r

t

f

23 57

10

2

Conditions:
V
V
R

Tj = 125°C

Inductive load

23 57

DD

DD

= 48V

GS

= ±15V

G

= 4.2Ω

= 48V

10

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

Tj = 25°C

SD

Chip

(V)

3

10

V

GS

7

5

(A)

S

SOURCE CURRENT I

Tj = 125°C

3

2

2

10

7
5

3

2

1

10

0.5 0.6 0.7 0.8 0.9 1.0

(TYPICAL)

= 0V

SOURCE-DRAIN VOLTAGE V

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

10

7
5

3
2

(ns)

t

d(off)

3

10

7
5

3
2

2

10

7
5

SWITCHING TIME

3
2

1

3

10

0

(TYPICAL)

t

r

t

t

d(on)

f

Conditions:
V

DD

= 48V

V

GS

= ±15V

I

D

= 300A

Tj = 125°C

Inductive load

10 20 30 40515253545

1

10

7
5

3
2

0

10

7
5

3
2

–1

10

7
5

3
2

SWITCHING ENERGY (mJ/pulse)

–2

10

10

DRAIN CURRENT ID (A)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

Eoff

Eon

E

Conditions:
V

DD

= 48V

V

GS

= ±15V

R

G

= 4.2Ω

Tj = 125°C

Inductive load

1

23 57

10

2

23 57

DRAIN CURRENT ID (A)

GATE RESISTANCE RG (Ω)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

2

10

7
5

3
2

1

10

Eoff

7
5

3
2

Eon

0

rr

3

10

10

7
5

E

rr

3
2

–1

10

7
5

3

SWITCHING ENERGY (mJ/pulse)

2

–2

10

010203040515253545

(TYPICAL)

Conditions:
V

DD

= 48V

V

GS

= ±15V

I

D

= 300A

Tj = 125°C

Inductive load

GATE RESISTANCE RG (Ω)

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

(ns)

rr

(A), t

rr

I

CHIP LAYOUT

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

10

10

10

10

3

7
5

3
2

2

7
5

3
2

7
5

3
2

10

1

0

1

(TYPICAL)

23 57

10

2

t

rr

I

rr

Conditions:
V

DD

= 48V

V

GS

= ±15V

R

G

= 4.2Ω

Tj = 25°C

Inductive load

23 57

10

SOURCE CURRENT IS (A)

(110)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

–3

10

0

10

7
5

3
2

–1

10

7
5

3
2

–2

10

7
5

NORMALIZED TRANSIENT

3

Single pulse

3

THERMAL IMPEDANCE Zth(j-c)

Tj = 25°C

2

Per unit base = Rth(j-c) = 0.13K/W

–3

10

–2

23 57 23 57 23 57 23 57

10

10

10

–1

–5

0

10

–4

23 57 23 57

10

TIME (s)

49.2

29.2

71

TrUP

TrUN

12 6

UV

24.8

57.8

90.8

(97)

NP

TrVP

TrVN

13

Tr WP

14

TrWN

(90)

(80)

(67)

LABEL SIDE

W

The company name and product names herein are the trademarks and registered trademarks of the respective companies.

Mar. 2013

<MOSFET MODULES >

HIGH POWER SWITCHING
USE INSULATED TYPE

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March-2013