FM400TU-2A
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
●
ID(rms) .......................................................... 200A
● VDSS.............................................................100V
● Insulated Type
●
6-elements in a pack
●
Thermistor inside
●
UL Recognized
File No.E323585
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
110
±0.25
97
70.9
36
10
30
NP
13
14
5-6.5
38
9.2
UV
1414
32 3216.5
14
202020
B
3
(8.7)
(6)
3.96
W
4
MOUNTINGHOLES
CIRCUIT DIAGRAM
P
(17.5)
4-φ6.5
(14.5)
7-M6NUTS
6.5
(6)(6)
22.75
15.2
16.5
16 1632
36
10
30
7 7
(15.8)
6.5
3
7
1216
A
25
6.5
11.5
4
(14.5)
22.57
9.1
±0.25
90
80
75
67
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
Dimensions in mm
±1.0
35
＋1.0
26
−0.5
LABEL
14
(SCREWING DEPTH)
(7)G
(1)S
(10)G
(4)S
U
P
U
P
U
N
U
N
N
(8)G
V
P
(2)SVP
UVW
V
(11)G
V
N
(5)S
(9)G
W
P
(3)S
W
P
N
(12)G
(6)S
W
N
W
N
(13)
(14)
(1)SUP
U
(7)G
(13)TH1
P
(2)S
V
P
V
P
(8)G
(14)TH2
(3)S
(9)G
(4)S
W
P
W
P
(10)G
(5)S
U
N
U
N
(11)G
V
N
V
N
(6)S
W
N
(12)GWN
A
B
Mar. 2013
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise specified.)
Symbol
V
DSS
VGSS
ID
IDM
IDA
1
IS*
ISM*
4
PD*
4
PD*
Tch
Tstg
Visol
—
—
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
1
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-S Short
D-S Short
T
C’ = 130°C*
Pulse*
3
2
L = 10µH Pulse*
2
Pulse*
TC = 25°C
T
C’ = 25°C*
3
Main terminal to base plate, AC 1 min, f=60Hz, RMS
Main Terminal M6
Mounting to heat sink M6
Typical value
ConditionsItem
2
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified.)
ConditionsItemSymbol
DSS
I
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)
RDD'-SS'
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
1
trr*
1
Qrr*
1
VSD*
Rth(j-c)
Rth(j-c’)
Rth(c-s)
Rth(c’-s’)
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Internal lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
V
DS = VDSS, VGS = 0V
I
D = 20mA, VDS = 10V
V
GS = VGSS, VDS = 0V
I
D = 200A
V
GS = 15V
I
D = 200A
V
GS = 15V
I
D = 200A
terminal-chip
V
DS = 10V
V
GS = 0V
V
DD = 48V, ID = 200A, VGS = 15V
DD = 48V, ID = 200A, VGS1 = VGS2 = 15V
V
R
G = 6.3Ω, Inductive load switching operation
I
S = 200A
S = 200A, VGS = 0V
I
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*
7
3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
3, *8
(1/6 module)
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Rating
100
±20
200
400
200
200
400
650
880
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Limits
Typ.
—
6
—
1.45
2.5
0.29
0.50
0.8
1.12
—
—
—
1200
—
—
—
—
—
6.0
—
—
—
0.1
0.09
Max.
0.40
400
400
450
300
250
0.19
0.142
7.3
1.5
2.0
—
—
—
—
75
10
—
—
1.3
—
—
Unit
V
V
A
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
Unit
1
mA
V
µA
mΩ
V
mΩ
nF
6
nC
ns
ns
µC
V
K/W
NTC THERMISTOR PART
Symbol
6
R25*
6
B*
1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*
2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.
*
3: TC’ measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.
*
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
5: TTH is thermistor temperature.
*
6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*
7: TC measured point is shown in page OUTLINE DRAWING.
*
8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
*
Resistance
B Constant
TTH = 25°C*
Resistance at TTH = 25°C, 50°C*
5
ConditionsParameter
5
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
kΩ
K
Mar. 2013
PERFORMANCE CURVES
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
15V
12V
(A)
D
400
350
300
250
200
150
100
DRAIN CURRENT I
50
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
3.5
ID = 200A
(mΩ)
3.0
DS(on)
2.5
(TYPICAL)
V
GS
= 12V
2.0
10V
Tj = 25°C
DS
V
GS
= 15V
Chip
(V)
Chip
9V
TRANSFER CHARACTERISTICS
(TYPICAL)
Tj = 25°C
(A)
D
400
300
V
DS
= 10V
Tj = 125°C
200
100
DRAIN CURRENT I
0
5791113 15
GATE-SOURCE VOLTAGE V
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
(V)
GS(th)
7
6
5
VDS = 10V
I
D
= 20mA
4
GS
Chip
(V)
1.5
1.0
DRAIN-SOURCE
0.5
ON-STATE RESISTANCE r
0
0
20
40 60 80
JUNCTION TEMPERATURE Tj (°C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
2.0
Tj = 25°C
(V)
1.6
DS(on)
1.2
0.8
DRAIN-SOURCE
0.4
ON-STATE VOLTAGE V
0
048121620
100
(TYPICAL)
120 140 160
Chip
ID = 400A
ID = 200A
ID = 100A
3
2
1
0
GATE THRESHOLD VOLTAGE V
0
20
40 60 80
100
JUNCTION TEMPERATURE Tj (°C)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
2
10
7
5
3
2
1
10
7
5
3
CAPACITANCE (nF)
2
V
GS
0
10
–1
2
10
(TYPICAL)
= 0V
0
357 2
10
357 2
120 140 160
1
357
10
C
iss
C
oss
C
rss
2
10
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
20
ID = 200A
(TYPICAL)
(V)
GS
16
V
DD
12
= 24V V
8
4
GATE-SOURCE VOLTAGE V
0
0 400 800
200 600
1000 1400 1800
GATE CHARGE QG (nC)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
7
5
t
d(off)
3
(ns)
2
t
d(on)
2
10
7
5
3
SWITCHING TIME
2
1
10
1
10
(TYPICAL)
23 57
10
2
DD
= 48V
1200 1600
t
r
t
f
Conditions:
V
DD
= 48V
V
GS
= ±15V
R
G
= 6.3Ω
Tj = 125°C
Inductive load
23 57
10
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
V
GS
7
5
(A)
3
S
2
2
10
7
5
3
2
SOURCE CURRENT I
1
10
0.5 0.6 0.7 0.8 0.9 1.0
(TYPICAL)
= 0V
Tj = 125°C
SOURCE-DRAIN VOLTAGE V
Chip
Tj = 25°C
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
4
10
7
5
3
2
(ns)
3
10
7
5
3
2
2
10
7
5
SWITCHING TIME
3
2
1
3
10
010 30 50 7020 40 60
(TYPICAL)
t
d(off)
t
d(on)
Conditions:
V
DD
= 48V
V
GS
= ±15V
I
D
= 200A
Tj = 125°C
Inductive load
t
r
t
f
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
7
5
3
2
SWITCHING ENERGY (mJ/pulse)
–2
10
10
DRAIN CURRENT ID (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
Eoff
Eon
E
rr
Conditions:
V
DD
= 48V
V
GS
= ±15V
R
G
= 6.3Ω
Tj = 125°C
Inductive load
1
23 57
10
2
23 57
DRAIN CURRENT ID (A)
10
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
Conditions:
10
7
V
DD
= 48V
5
3
V
GS
SWITCHING ENERGY (mJ/pulse)
3
10
= ±15V
2
I
D
= 200A
–2
010 30 50 7020 40 60
(TYPICAL)
Tj = 125°C
Inductive load
Eon
Eoff
E
rr
GATE RESISTANCE RG (Ω)
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
(ns)
rr
(A), t
rr
I
CHIP LAYOUT
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
10
10
10
10
3
7
5
3
2
2
7
5
3
2
1
7
5
3
2
0
10
1
(TYPICAL)
23 57
10
2
t
rr
I
rr
Conditions:
V
DD
= 48V
V
GS
= ±15V
R
G
= 6.3Ω
Tj = 25°C
Inductive load
23 57
10
SOURCE CURRENT IS (A)
(110)
(97)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10
10
10
7
5
3
2
10
7
5
3
2
10
1
–1
–2
–3
–3
–3
10
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
Single pulse
3
THERMAL IMPEDANCE Zth(j-c)
Tj = 25°C
2
Per unit base = Rth(j-c) = 0.19K/W
–3
10
–2
23 57 23 57 23 57 23 57
10
10
10
–1
–5
0
10
–4
23 57 23 57
10
TIME (s)
49.2
29.4
57.8
24.8
71
TrUP
TrUN
12 6
UV
25.4
58.4
90.8
NP
TrVP
TrVN
13
Tr WP
14
TrWN
(90)
(80)
(67)
LABEL SIDE
W
91.4
The company name and product names herein are the trademarks and registered trademarks of the respective companies.
Mar. 2013
<MOSFET MODULES >
HIGH POWER SWITCHING
USE INSULATED TYPE
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making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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March-2013
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