Mitsubishi Electric US, Inc FM200TU-3A Data Sheet

FM200TU-3A

MITSUBISHI <MOSFET MODULE>

FM200TU-3A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

●

ID(rms) .......................................................... 100A

● VDSS.............................................................150V

● Insulated Type

●

6-elements in a pack

●

Thermistor inside

●

UL Recognized

File No.E323585

APPLICATION

AC motor control of forklift (battery power source), UPS

OUTLINE DRAWING & CIRCUIT DIAGRAM

110

±0.25

97

70.9

36

10

30

NP

13

14

5-6.5

38

9.2

UV

1414

32 3216.5

14

202020

B

3
(8.7)

(6)

3.96

W

4

MOUNTINGHOLES

CIRCUIT DIAGRAM

P

(17.5)

4-φ6.5

(14.5)

7-M6NUTS

6.5

(6)(6)

22.75

15.2

16.5

16 1632

36

10

30

7 7

(15.8)

6.5

3

7

1216

A

25

6.5

11.5

4

(14.5)

22.57

9.1

±0.25

90

80

75

67

Tc measured point

Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1

Dimensions in mm

±1.0

35

＋1.0

26

−0.5

LABEL

14

(SCREWING DEPTH)

(7)G
(1)S

(10)G

(4)S

U

P

U

P

U

N

U

N

N

(8)G

V

P

(2)SVP

UVW

V

(11)G

V

N

(5)S

(9)G

W

P

(3)S

W

P

N

(12)G

(6)S

W

N

W

N

(13)

(14)

(1)SUP

U

(7)G

(13)TH1

P

(2)S

V

P

V

P

(8)G

(14)TH2

(3)S

(9)G

(4)S

W

P

W

P

(10)G

(5)S

U

N

U

N

(11)G

V

N

V

N

(6)S

W

N

(12)GWN

A

B

Mar. 2013

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise specified.)

Symbol

V

DSS

VGSS
ID
IDM
IDA

1

IS*
ISM*

4

PD*

4

PD*
Tch
Tstg
Visol

—

—

Drain-source voltage
Gate-source voltage

Drain current

Avalanche current

Source current

1

Maximum power dissipation

Channel temperature
Storage temperature
Isolation voltage

Mounting torque

Weight

G-S Short
D-S Short
T

C’ = 122°C*

Pulse*

3

2

L = 10µH Pulse*

2

Pulse*
TC = 25°C
T

C’ = 25°C*

3

Main terminal to base plate, AC 1 min, f=60Hz, RMS
Main Terminal M6
Mounting to heat sink M6
Typical value

ConditionsItem

2

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified.)

ConditionsItemSymbol

DSS

I
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)

RDD'-SS'

Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf

1

trr*

1

Qrr*

1

VSD*
Rth(j-c)
Rth(j-c’)
Rth(c-s)
Rth(c’-s’)

Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage

Internal lead resistance

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage

Thermal resistance

Contact thermal resistance

V

DS = VDSS, VGS = 0V

I

D = 10mA, VDS = 10V

V

GS = VGSS, VDS = 0V

I

D = 100A

V

GS = 15V

I

D = 100A

V

GS = 15V

I

D = 100A

terminal-chip

V

DS = 10V

V

GS = 0V

V

DD = 80V, ID = 100A, VGS = 15V

DD = 80V, ID = 100A, VGS1 = VGS2 = 15V

V
R

G = 13Ω, Inductive load switching operation

I

S = 100A

S = 100A, VGS = 0V

I
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*

7

3

Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*

Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C

3, *8

(1/6 module)

MITSUBISHI <MOSFET MODULE>

FM200TU-3A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

Min.

—

4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

Rating

150
±20
100
200
100
100
200
410

560
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
600

Limits

Typ.

—

6

—

4.8

9.1

0.48

0.91

1.2

1.68
—
—
—

820

—
—
—
—
—

6.5
—
—
—

0.1

0.09

Max.

0.66

400
250
450
200
200

0.30

0.22

7.3

1.5

6.6
—

—
—
—

50

—

—

1.3

—
—

Unit

V
V
A
A
A
A

A
W
W

°C
°C

V

N • m
N • m

g

Unit

1

mA

V

µA

mΩ

V

mΩ

7

nF

4

nC

ns

ns

µC

V

K/W

NTC THERMISTOR PART

Symbol

6

R25*

6

B*

1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).

*

2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.

*

3: TC’ measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.

*

4: Pulse width and repetition rate should be such as to cause negligible temperature rise.

*

5: TTH is thermistor temperature.

*

6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)

*

7: TC measured point is shown in page OUTLINE DRAWING.

*

8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

*

Resistance
B Constant

TTH = 25°C*
Resistance at TTH = 25°C, 50°C*

5

ConditionsParameter

5

Min.

—
—

Limits

Typ.

100

4000

Max.

—
—

Unit

kΩ

K

Mar. 2013